• Title/Summary/Keyword: Ar rate

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An optimized condition for corrosion protection of Type 304 Films prepared by unbalanced magnetron sputtering in 3.5% NaCl solution

  • Yoo, Ji-Hong;Ahn, Seung-Ho;Kim, Jung-Gu;Lee, Sang-Yul
    • Journal of Surface Science and Engineering
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    • v.34 no.5
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    • pp.465-474
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    • 2001
  • Type 304SS coatings were performed at 200$\square$ onto AISI 1045 carbon steel substrate using unbalanced magnetron sputtering (UBMS) with an austenitic AISI 304 stainless steel (SS) target of 100mm diameter. The total deposition pressure in the active Ar gas was 2$\times$10$^{-3}$ Torr. Coatings were done at various target power densities and bias voltages. Chemical compositions of metallic elements of the coatings were measured by energy dispersive X-rays spectroscopy (EDS). The structure and the morphology of Type 304SS coatings were investigated by means of X-ray diffraction (XRD) and scanning electron microscopy (SEM). Corrosion properties of the coated specimens were examined using electrochemical polarization measurements and electrochemical impedance spectroscopy in a deaerated 3.5% NaCl solution. The porosity rate was obtained from a comparison of the dc polarization resistance of the uncoated and coated substrates. Scratch adhesion testing was used to compare the critical loads for different coatings. XRD results showed that the sputtered films exhibit a ferritic b.c.c. $\alpha$-phase. Potentiodynamic polarization curves indicated that all samples had much higher corrosion potential and better corrosion resistance than the bare steel substrate. The corrosion performance increased with increasing power density and the adhesion was enhanced at the bias voltage of -50V. An improvement in the corrosion resistance can be obtained with a better coating adhesion. Finally, an optimized deposition condition for corrosion protection was found as $40W/cm^2$ and -50V.

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Magnetotransport Properties of Co-Fe/Al-O/Co-Fe Tunnel Junctions Oxidized with Microwave Excited Plasma

  • Nishikawa, Kazuhiro;Orata, Satoshi;Shoyama, Toshihiro;Cho, Wan-Sick;Yoon, Tae-Sick;Tsunoda, Masakiyo;Takahashi, Migaku
    • Journal of Magnetics
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    • v.7 no.3
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    • pp.63-71
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    • 2002
  • Three fabrication techniques for forming thin barrier layer with uniform thickness and large barrier height in magnetic tunnel junction (MTJ) are discussed. First, the effect of immiscible element addition to Cu layer, a high conducting layer generally placed under the MTJ, is investigated in order to reduce the surface roughness of the bottom ferromagnetic layer, on which the barrier is formed. The Ag addition to the Cu layer successfully realizes the smooth surface of the ferromagnetic layer because of the suppression of the grain growth of Cu. Second, a new plasma source, characterized as low electron energy of 1 eV and high density of $10^{12}$ $cm^{-3}$, is introduced to the Al oxidation process in MTJ fabrication in order to reduce damages to the barrier layer by the ion-bombardment. The magnetotransport properties of the MTJs are investigated as a function of the annealing temperature. As a peculiar feature, the monotonous decrease of resistance area product (RA) is observed with increasing the annealing temperature. The decrease of the RA is due to the decrease of the effective barrier width. Third, the influence of the mixed inert gas species for plasma oxidization process of metallic Al layer on the tunnel magnetoresistance (TMR) was investigated. By the use of Kr-O$_2$ plasma for Al oxidation process, a 58.8 % of MR ratio was obtained at room temperature after annealing the junction at $300{^{\circ}C}$, while the achieved TMR ratio of the MTJ fabricated with usual Ar-$0_2$ plasma remained 48.4%. A faster oxidization rate of the Al layer by using Kr-O$_2$ plasma is a possible cause to prevent the over oxidization of Al layer and to realize a large magnetoresistance.

Adaptive Lattice Step-Size Algorithm for Narrowband Interference Suppression in DS/CDMA Systems

  • Benjangkaprasert, Chawalit;Teerasakworakun, Sirirat;Jorphochaudom, Sarinporn;Janchitrapongvej, Kanok
    • 제어로봇시스템학회:학술대회논문집
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    • 2003.10a
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    • pp.2087-2089
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    • 2003
  • The presence of narrowband interference (NBI) in Direct-sequence code division multiple access (DS/CDMA) systems is an inevitable problem when the interference is strong enough. The improvement in the system performance employs by adaptive narrowband interference suppression techniques. Basically there have been two types of method for narrowband interference suppression estimator/subtracter approaches and transform domain approaches. In this paper the focus is on the type of estimator/subtracter approaches. However, the binary direct sequence (DS) signal, that acts as noise in the prediction process is highly non-Gaussian. The case of a Gaussian interferer with known in an autoregressive (AR) signal or a digital signal and also in a sinusoidal signal (Tone) that included in is paper. The proposed NBI suppression is presence in an adaptive IIR notch filter for lattice structure and more powerful by using a variable step-size algorithm. The simulation results show that the proposed algorithm can significantly increase the convergence rate and improved system performance when compare with adaptive least mean square algorithm (LMS).

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Fluctuation in Plasma Nanofabrication

  • Shiratani, Masaharu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.96-96
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    • 2016
  • Nanotechnology mostly employs nano-materials and nano-structures with distinctive properties based on their size, structure, and composition. It is quite difficult to produce nano-materials and nano-structures with identical sizes, structures, and compositions in large quantities, because of spatiotemporal fluctuation of production processes. In other words, fluctuation is the bottleneck in nanotechnology. We propose three strategies to suppress such fluctuations: employing 1) difference between linear and nonlinear phenomena, 2) difference in time constants, and 3) nucleation as a bottleneck phenomenon. We are also developing nano- and micro-scale guided assembly using plasmas as a plasma nanofabrication.1-5) We manipulate nano- and micro-objects using electrostatic, electromagnetic, ion drag, neutral drag, and optical forces. The accuracy of positioning the objects depends on fluctuation of position and energy of an object in plasmas. Here we evaluate such fluctuations and discuss the mechanism behind them. We conducted in-situ evaluation of local plasma potential fluctuation using tracking analysis of fine particles (=objects) in plasmas. Experiments were carried out with a radio frequency low-pressure plasma reactor, where we set two quartz windows at the top and bottom of the reactor. Ar plasmas were generated at 200 Pa by applying 13.56MHz, 450V peak-to-peak voltage. The injected fine particles were monodisperse methyl methacrylate-polymer spheres of $10{\mu}m$ in diameter. Fine particles were injected into the reactor and were suspended around the plasma/sheath boundary near the powered electrode. We observed binary collision of fine particles with a high-speed camera. The frame rate was 1000-10000 fps. Time evolution of their distance from the center of mass was measured by tracking analysis of the two particles. Kinetic energy during the collision was obtained from the result. Potential energy formed between the two particles was deduced by assuming the potential energy plus the kinetic energy is constant. The interaction potential is fluctuated during the collision. Maximum amplitude of the fluctuation is 25eV, and the average is 8eV. The fluctuation can be caused by neutral molecule collisions, ion collisions, and fluctuation of electrostatic force. Among theses possible causes, fluctuation of electrostatic force may be main one, because the fine particle has a large negative charge of -17000e and the corresponding electrostatic force is large compared to other forces.

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Critical dimension uniformity improvement by adjusting etch selectivity in Cr photomask fabrication

  • O, Chang-Hun;Gang, Min-Uk;Han, Jae-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.213-213
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    • 2016
  • 현재 반도체 산업에서는 디바이스의 고 집적화, 고 수율을 목적으로 패턴의 미세화 및 웨이퍼의 대면적화와 같은 이슈가 크게 부각되고 있다. 다중 패터닝(multiple patterning) 기술을 통하여 고 집적 패턴을 구현이 가능해졌으며, 이와 같은 상황에서 각 패턴의 임계치수(critical dimension) 변화는 패턴의 위치 및 품질에 큰 영향을 끼치기 때문에 포토마스크의 임계치수 균일도(critical dimension uniformity, CDU)가 제작 공정에서 주요 파라미터로 인식되고 있다. 반도체 광 리소그래피 공정에서 크롬(Cr) 박막은 사용되는 포토 마스크의 재료로 널리 사용되고 있으며, 이러한 포토마스크는 fused silica, chrome, PR의 박막 층으로 이루어져 있다. 포토마스크의 패턴은 플라즈마 식각 장비를 이용하여 형성하게 되므로, 식각 공정의 플라즈마 균일도를 계측하고 관리 하는 것은 공정 결과물 관리에 필수적이며 전체 반도체 공정 수율에도 큰 영향을 미친다. 흔히, 포토마스크 임계치수는 플라즈마 공정에서의 라디칼 농도 및 식각 선택비에 의해 크게 영향을 받는 것으로 알려져 왔다. 본 연구에서는 Cr 포토마스크 에칭 공정에서의 Cl2/O2 공정 플라즈마에 대해 O2 가스 주입량에 따른 식각 선택비(etch selectivity) 변화를 계측하여 선택비 제어를 통한 Cr 포토마스크 임계치수 균일도 향상을 실험적으로 입증하였다. 연구에서 사용한 플라즈마 계측 방법인 발광분광법(OES)과 optical actinometry의 적합성을 확인하기 위해서 Cl2 가스 주입량에 따른 actinometer 기체(Ar)에 대한 atomic Cl 농도비를 계측하였고, actinometry 이론에 근거하여 linear regression error 1.9%을 보였다. 다음으로, O2 가스 주입비에 따른 Cr 및 PR의 식각률(etch rate)을 계측함으로써 식각 선택비(etch selectivity)의 변화율이 적은 O2 가스 농도 범위(8-14%)를 확인하였고, 이 구간에서 임계치수 균일도가 가장 좋을 것으로 예상할 수 있었다. (그림 1) 또한, spatially resolvable optical emission spectrometer(SROES)를 사용하여 플라즈마 챔버 내부의 O atom 및 Cl radical의 공간 농도 분포를 확인하였다. 포토마스크의 임계치수 균일도(CDU)는 챔버 내부의 식각 선택비의 변화율에 강하게 영향을 받을 것으로 예상하였고, 이를 입증하기 위해 각각 다른 O2 농도 환경에서 포토마스크 임계치수 값을 확인하였다. (표1) O2 11%에서 측정된 임계치수 균일도는 1.3nm, 그 외의 O2 가스 주입량에 대해서는 임계치수 균일도 ~1.7nm의 범위를 보이며, 이는 25% 임계치수 균일도 향상을 의미함을 보인다.

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플라즈마 표면처리시 산소 분율의 변화가 기판의 표면에너지와 코팅층과의 계면 부착 특성에 미치는 영향

  • Kim, Dong-Yong;Bae, Gwang-Jin;Kim, Jong-Gu;Ju, Jae-Hun;Jo, Yeong-Rae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.110-110
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    • 2015
  • 표면에너지는 계면특성을 지배하는 핵심인자로 디스플레이의 터치 스크린 패널 공정, 이종소재의 접합, 금속의 클래딩 등 실제 산업에 있어서 매우 중요하다. 표면에너지는 코팅과 본딩 이론에 있어서 기본이 되는 물리량으로 표면에너지가 높을수록 코팅 또는 박막 증착시 코팅, 증착이 용이하며 이종소재의 접합도 쉽게 일어난다. 본 연구에서는 플라즈마 표면처리시 산소 분율의 변화에 따른 기판의 표면에너지와 코팅층과 기판의 부착력의 변화에 대해 연구하였다. 연구의 주요 기판으로 ITO, PET 기판을 사용하였고, 표면 에너지 변화를 확인하기 위해 기판을 상온 상압 플라즈마에 노출시켰다. 플라즈마는 아르곤(Ar)의 공급량을 20 LPM으로 고정하고 산소($O_2$)의 공급량을 0 sccm에서 40 sccm 까지 10 sccm 간격으로 변수를 주었다. 표면에너지 값은 기판 위에 형성된 액체의 접촉각을 통해 도출하였다. 표면에너지 측정 액체로 증류수(deionized water)와 디오도메탄(diiodo-methane)을 사용하였다. 표면에너지는 산소분압이 10 sccm에서 최대값인 76 mJ/m2으로 증가한 후 20 sccm까지 유지하다 다시 직선적으로 감소하였다. 기판에 증착된 크롬 박막의 부착력은 스크래치 테스트를 통해 측정하였다. 표면에너지의 증가와 비례하게 부착력은 증가하였고 표면에너지가 감소하는 범위에서는 부착력도 감소하였다. 기판과 코팅층의 부착력 증가 원인 중 하나인 계면 산화물 층의 생성 여부를 알아보기 위해 auger electron spectroscopy (AES) 분석을 진행하였다. AES 분석을 통해 플라즈마 표면처리시 기판과 코팅층의 계면 산화물층의 두께가 표면에너지의 변화와 비례하게 증가하였다가 감소하는 것을 확인하였다. 산소분압이 10 sccm 이었을 경우 산화물층의 두께가 가장 두꺼웠다. 또한 계면의 화학적 결합 상태를 알아보기 위해 X-ray photoelectron spectroscopy (XPS) 분석을 진행하였으며 산소 분율의 변화에 따라 크롬 산화물의 양이 증가하였다 감소하는것을 확인하였다. 이 연구를 통해 산소를 포함한 플라즈마 표면개질이 기판과 코팅층의 부착력 증가에 영향을 끼침을 확인 할 수 있었다. 또한 이를 응용하여 부착력 증가가 필요한 다양한 분야에서도 쉽게 적용시킬 수 있을 것이다.

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Analysis of Marker Substances in Samul-tang by HPLC-MS/MS (HPLC-MS/MS에 의한 사물탕의 지표성분 분석)

  • Yu, Young-Beob;Kim, Mi-Jung;Huang, Dae-Sun;Ha, Hye-Kyeong;Ma, Jin-Yeul;Shin, Hyeun-Kyoo
    • The Korea Journal of Herbology
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    • v.22 no.2
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    • pp.97-102
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    • 2007
  • Objectives : This study presents a high performance liquid chromatography - electrospray ionization-mass spectrometer (HPLC-MS/MS) methods for the quantitative and qualitative analysis of various active components in Samul-tang, which is composed of four crude herbs. Methods : HPLC-ESI-MS/MS for the determinations of paeoniflorin and 5-HMF (5-hydroxymethyl 2-furaldehyde) in the Samul-tang, the separation method was performed on an COSMOS1L 5C18-AR-Il (2.0 X 150 mm I.D.) column by gradient elution with 0.1% acetic acid and 5% CH3CN in water (A)-0.1% acetic acid and 5% H20 in CH3CN (B) as the mobile phase at a flow-rate of 300 ${\mu}L/min$ with detection at quadrupole mass spectrometer. The all marker substances were always detected as the base peaks in the positive ion mode. Results : The paeoniflorin of Paeoniae Radix in Samul-tang showed a strong base peak [M+H2O]+ in the positive detection mode to give the following as; paeoniflorin (498.109 [M+H2O]+, 479.8 [M]+, 301 [M-glucose]+, 179.3 [glucose]+). Based on the HPLC retnetion time and MS of standard compounds confirmed the identity of active compounds in Rehmanniae Radix Preparata as follows; 5-HMF (127.0[M+H]+, 109.3 [M-OH]+) in the positive ion mode. Conclusion : According to the above results, HPLC-ESI-MS method permits assignment of tentative structures such as paeoniflorin and 5-HMF in the Samul-tang.

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Effect of Preparation Conditions on the Characteristics of Fe Powders Prepared by Spray Pyrolysis as Heat Source Material (분무열분해공정 하에서 합성 조건이 열원 소재로서의 Fe 분말 특성에 미치는 영향)

  • Koo, Hye-Young;Kim, Jung-Hyun;Hong, Seung-Kwon;Han, Jin-Man;Ko, You-Na;Lee, Su-Min;Ko, Da-Rae;Kang, Yun-Chan;Kang, Seung-Ho;Cho, Sung-Baek
    • Korean Journal of Materials Research
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    • v.19 no.11
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    • pp.581-587
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    • 2009
  • Fe powders with elongated and aggregated structure as heat pellet material for thermal battery applications were prepared by spray pyrolysis under various preparation conditions. The precursor powders with spherical shapes and hollow morphologies turned into Fe powders after reduction at a temperature of 615$^{\circ}C$ under 20% $H_2$/Ar gas. The powders had pure Fe crystal structures irrespective of the preparation conditions of the precursor powders in the spray pyrolysis. The morphologies and mean sizes of the Fe powders are affected by the preparation conditions of the precursor powders in the spray pyrolysis. Therefore, the ignition sensitivities and the burn rates of the heat pellets formed from the Fe powders prepared by spray pyrolysis are affected by the preparations of the precursor powders. The Fe powders prepared under the optimum preparation conditions have a BET surface area of 2.9 $m^2g^1$. The heat pellets prepared from the Fe powders with elongated and aggregated structure have a good ignition sensitivity of 1.1W and a high burn rate of 18 $cms^1$.

A study of Compositional range of Ti-Si-N films for the ULSI diffusion barrier layer (ULSI 확산억제막으로 적합한 Ti-Si-N의 조성 범위에 관한 연구)

  • 박상기;강봉주;양희정;이원희;이은구;김희재;이재갑
    • Journal of the Korean Vacuum Society
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    • v.10 no.3
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    • pp.321-327
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    • 2001
  • Ti-Si-N films obtained by using RF reactive sputtering of targets with various Ti/Si ratios in a $N_2(Ar+N_2)$ gas mixture have been investigated in terms of films resistivity and diffusion barrier performance. The chemical bonding state of Si in the Ti-Si-N film which contained a higher Si content was in the form of amorphous $Si_3N_4$, producing increased film resistivity with increased $N_2$flow rate. Lowering the Si content in the deposited Ti-Si-N film favored the formation of crystalline TiN even at low $N_2$flow rates, and leads to low film resistivity. In addition increasing the N content led to Ti-Si-N films having a higher density and compressive stress, suggesting that the N content in the films appear to be one of the most important factors affecting the diffusion barrier characteristics. Consequently, we proposed the optimum composition in the range of 29~49 at.% of Ti, 6~20 at.% of Si, and 45~55 at.% of N for the Ti-Si-N films having both low resistivity and excellent diffusion barrier performance.

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Synthesis of graphene and its application to thermal and surface modification (그래핀의 합성과 열전도 및 표면 특성 개선 활용)

  • Kim, Yong-You;Jang, Hee-Jin;Choi, Byung-Sang
    • The Journal of the Korea institute of electronic communication sciences
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    • v.8 no.4
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    • pp.549-554
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    • 2013
  • With the synthesis of graphene on Cu using CVD, it was tried to show the behavior of graphene growth depending on the size and orientation of Cu grain. It was found out that even under the same temperature and pressure the use of different gases influences on the diffusion rate of Cu. As compared to Ar gas, Cu grain growing bigger under $H_2$ and $CH_4$ was resulted in bigger graphene grain. Corrosion resistance was evaluated by potentiodynamic polarization test in room temperature and found out that the graphene on Cu was more stable in order of 10 than pure Cu due to the chemical stability of graphene. The future work of this research will focus on the synthesis of graphene having no defects including grain boundaries, and its engineering use.