• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.109-110
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• 2000

Sputtering yield of MgO film in the AC-PDPs has been calculated by Monte Carlo simulation of ion scattering. In the ion energy range less than 50 eV, the sputtering yield is 4 ${\times}$ $10^{-4}$ for Xe ions and it is between 0.1 and 0.01 for He, Ne, and Ar ions. The erosion rate is estimated about $25{\AA}$ per hour for Xe ions in an actual PDP plasma for sustain and full white mode.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.23 no.9A
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• pp.2249-2257
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• 1998

In this paper, we propose the enhanced priority control algorithm that adaptively controls the cell service ratio according to the relative cell occupancy ratio of buffer. The asynchronous transfer mode (ATM) provides the means to support various multimedia services in broadband networks. To support multimedia services, various data traffics of different priorities should be controlled effectively. And also it needs congestion control functions required in the netowrk to carry out the control operation. To accomplish this in a flexible and effective manner, priority classes for the different services ar ecommonly used. The proposed enhanced priority control mechanism have two service calsses of the delay sensitive class and the loss sensitive class. The simulation results show that te proposed control mechanism improves the QoS, the charateristics of cell loss probability and mean cell delay time, by selecting propeor relativ ecell occupancy ratio of buffer and the average arrival rate.

• Journal of the Korean Ceramic Society
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• v.26 no.4
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• pp.539-549
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• 1989

Polycrystalline TiO2 thin films were deposited on Si and Al2O3 substrates by CVD method. Ethyl titanate, Ti(OC2H5)4, was used as a source material for Ti and O, and Ar was used for carrier gas. In the surface chemical reaction controlled deposition condition, the apparent activation energy of 6.74 Kcal/mole was obtained, and the atomic adsorption on substrate surface was proved to be governed by Rideal-Elley mechanism. In the mass transfer controlled deposition condition, the deposition rate was in a good agreement with the result which was calculated by the simple boundary layer theory. It was also observed that TiO2 thin films show different surface morphology according to the different deposition mechanism, which was fixed by deposition conditions. This phenomenon could be well explained by the surface perturbation theory.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.436-440
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• 2003

The (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/ $SiO_2$/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/ $O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[$\AA$/min] at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz]. SCT thin films used in this study showed the phenomena of dielectric relaxation with the increase of frequency.ncy.

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.911-917
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• 1996

Platinum thin films were deposited on Si-wafer by DC rnagnetron sputtering for RTD (resistance thermometer devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The deposition rate was increased with increasing the input power but decreased with increasing Ar gas pressure. The resistivity and sheet resistivity were decreased with increasing the temperature of substrate and the annealing time at 1000.deg. C. At substrate temperature of >$300^{\circ}C$, input power of 7 w/cm$^{2}$, working vacuum of 5 mtorr and annealing conditions of 1000.deg. C and 240 min, we obtained 10.65.mu..ohm..cm, resistivity of Pt thin films and 3800-3900 ppm/.deg. C, TCR(temperature coefficient of resistance). These values are close to the bulk value. These results indicate that the Pt thin films deposited by DC magnetron sputtering have potentiality for the development of Pt RTD temperature sensor.

• Journal of the Semiconductor & Display Technology
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• v.6 no.3
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• pp.41-45
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• 2007

The (SrCa)$TiO_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}500[^{\circ}C]$. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$ at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.081 in A/B ratio). The maximum dielectric constant of SCT thin film was obtained by annealing at $600[^{\circ}C]$.

• Journal of Welding and Joining
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• v.29 no.5
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• pp.58-62
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• 2011

Stainless steels are alloy steels with a nominal chromium content of at least 11 percent, with other alloy additions. The stainlessness and corrosion resistance of these alloy steels are attributed to the presence of a passive oxide film on the surface. When exposed to conditions like Resistance Spot Welding (RSW) process that remove the passive oxide film, stainless steels are subject to corrosive attack. And exposure to elevated temperatures causes oxidation (discoloration) of areas around indentation in Spot welding. In this paper, deal with the effect of shielding gas (Ar) preventing the corrosion, oxidation of stainless steel. And find the optimal shielding gas flow rate. In addition, suggest effective purging method for direct/indirect spot welding process.

• Journal of the Korean Graphic Arts Communication Society
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• v.23 no.2
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• pp.93-101
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• 2005

The measured plasma temperature of Ar hollow cathode discharge for several metal cathodes are about $620\;{\sim}\;780K$ at discharge current of $7\;{\sim}\;10mA$. The optogalvanic signals were measured using hollow cathode discharge tube with argon as buffer gas at change of discharge currents. A change of ionization rate due to electron collision causes an increase or decrease of the electric conductivity. This change in electric conductivity generates the optogalvanic signal. We conclude that optogalvanic signal has close relation with the lowest metastable atoms density at low current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.333-334
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• 2008

The SCT thin films were deposited on Pt-coated electrode using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of 100~500[$^{\circ}C$]. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[$\AA$/min] at the optimum condition. The maximum dielectric constant of SCT thin film was obtained by annealing at $600^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.3
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• pp.478-484
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• 1994

Facing target dc sputtering system developed by Hoshi et al. has simple configuration and high deposition rate under moderate substrate temperature in the range of pressure 5x10S0-4T - 1x10S0-2T torr. In this system, magnetic field should be applied perpendicular to the target surface in order to confine high energy secondary electrons between two targets. Because of this magnetic field, the glow discharge characteristics are very different from dc planar diode system showing some unstable discharge region. In this paper, the glow discharge characteristics of this system have been studied under the condition of Ti targets with Ar-NS12T(10%) as working gas. It is found that this system has stable discharge region under the discharge current density of 15-30(mA/cmS02T). The plasma density and electron temperature are in the range of 10S010Y - 10S011T(CMS0-3T) and 2.5-5(eV), respectively.