• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.224-227
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• 1996

Platinum thin films were deposited on Si-wafer by DC magnetron sputtering for RTD (Resistance Thermometer Devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The deposition rate was increased with increasing the input power but decreased with increasing Ar gas pressure. The resistivity were decreased wish increasing the temperature of substrate and the annealing time at 1000$^{\circ}C$. At substrate temperature 300$^{\circ}C$, input power 7(w/$\textrm{cm}^2$), working vacuum 5mtorr and annealing conditions 1000$^{\circ}C$, 240 min we obtained 10.65${\mu}$Ω$.$cm, resistivity of Pt thin film closed to the bulk value.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.776-780
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• 2000

ZnGa$_2$O$_4$thin films were prepared on Si(100) wafer in terms of RF power, substrate temperatures and Ar/O$_2$flow rate by RF Magnetron Sputtering. Photoluminescence(PL) measurement was employed to observe the emission spectra of ZnGa$_2$O$_4$films. The influences of various deposition parameters on the properties of grown films were studied. The optimum substrate deposition temperature for luminous characteristics was about 50$0^{\circ}C$ in this investigation. PL spectrum of ZnGa$_2$O$_4$ thin films showed broad band luminescence spectrum.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.152-155
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• 1994

The purpose of this paper is to develope an electron beam resist by the plasma polymerization. Plasma co-polymerized resist was prepared using an interelectrode gas-flow-type reactor. And then delineated pattern in the resist was developed with gas flow type reactor using Ar and O$_2$ gas as etching gas. We study about the effects of discharge power and mixing rate of the copolymerized thin film. The characteristics of molecular structure of thin film was investigated by FT-lR, DSC and GPC, and then was discussed in relation to its quality as a resist.

• Journal of Surface Science and Engineering
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• v.29 no.6
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• pp.869-875
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• 1996

In this article the effects of process parameters of inductively coupled plasma etching with $SF_6$ /$N_2$/Ar mixture gas and mask materials on the etched profile of W were investigated. While the etched profile was improved by $N_2$-addition, low working presure, and reduced $SF_6$ flow rate, the etching selectity (W against SAL resist) was decreased. Due to the difficulty of W etching with single layer resist, sputter deposited $Al_2O_3$ film was used as a hardmask. Reduction of required EB resist thickness through $Al_2O_3$ mask application could reduce proximity effect during e-beam patterning, but the etch anisotropy was degraded by decreased sidewall passiviation effect.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2004.10a
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• pp.83-88
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• 2004

Micro wires manufactured by the straightening progress are widely used in bio-medical and semi-conductor fields. In this study, we have developed a novel straightener which uses the direct heating method for straightening. In order to avoid the surface oxidization, during the heating process, we supplied the inert gas(Ar) and examined the effect of the gas flow rate. The effect of the tension and the current applied to the tungsten micro wires were thoroughly studied. From various experiments, it was found that when the tension is $500{\sim}600gf$ and the current is about 1.5A, we obtained higher straightness(${\approx}1{\mu}m/1000{\mu}m$) and roundness ($<{\pm}2{\mu}m/100{\mu}m$).

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.211-214
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• 1990

The cordierite(2 MgO, $2Al_2O_3$, $5SiO_2$) is of great interest for microelectronic substrate of multilayer intergrated circuits. The metal used in this study was copper, and metal layer is fabricatedon the cordierite substrate by the screen printing method. We studied the adhesion properties of the interfaces due to the different cosintering conditions. When cosintering in the $Ar+H_2O$ gas, the adhesion is very good. Specially heating rate is very important factor for the adhesion.

• Korean Journal Plant Pathology
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• v.10 no.2
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• pp.144-147
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• 1994

About 450 phytopathogenic fungal cultures were stored in sterile distilled water ar room temperature by the sterile water storage method, which has been known as a simple, convenient, and long-term storage method of microorganisms. After 12 months, viability and pathogenicity of the stored isolates were tested. Among 205 tested, 175 isolates (84.5%) survived. Of these, Rhizoctonia solani, Botrytis cinerea, Pyricularia oryzae, Phytophthora infestans, and Sclerotinia sclerotiorum showed relatively lower survival rate; 92%, 74.1%, 62.5%, 45.8%, and 30%, respectively. Twenty seven isolates belonging to seven important phytopathogenic fungi were tested for pathogenicity, and all isolates tested maintained pathogenicity until at least 12 months after storage.

• Proceedings of the Korean Vacuum Society Conference
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• 1992.02a
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• pp.3-10
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• 1992

pphotostimulated desorpption of NO chemisorbed on ppt(001) at 80K has been studied by the (1+1)-resonance-enhanced multipphoton ionization((1+1)-REMppI) technique. A linearly ppolarized ArF excimer laser ( =193 nm, 6.41eV) is used as the ppumpp laser. A high adsorpption rate selectivity was found in the expposure deppendence of the NO desorpption yield. The NO desorpption yield increases drastically when the amount of NO expposure exceeds ~1.8 L. This result shows that the amount of NO sppecies with a large cross section for pphotostimulated desorpption increases drastically at higher NO coverages. Using scanning tunneling microscoppy, we have observed structural modifications of the chlorinated Si(111)-7$\times$7 surface induced by 266nm laser irradiation. At very low laser fluence of 0.7mJ/$\textrm{cm}^2$, at which thermal desorpption can be ignored, a pperiodic stripped ppattern of a single domain is imaged. This ppattern consists of flat terraces and narrow grooves of ~60 and ~10A in width, resppectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.304-304
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• 2012

CIGS(CuInGaSe2) 태양전지의 후면전극(Back contact)으로 널리 사용되는 Mo 박막은 낮은 면저항, 높은 반사율, 광흡수층 Na-path 제공 등의 조건이 요구된다. 일반적으로 Mo 박막 제작은 DC 마그네트론 스퍼터링 방법이 가장 널리 사용되며, 제작조건에 따라 태양전지 효율에 강한 영향을 미치는 것으로 보고되고 있다. 본 연구에서는 DC 마그네트론 스퍼터링 시 기판에 이온빔(Ion-beam)을 동시 조사하는 이온 빔 스퍼터링 증착(Ion-beam sputter deposition)법으로 Mo 박막을 제작하였다. 제작된 박막의 전기적 및 광학적 특성은 4-point probe, UV-Vis-NIR spectrometer로 각각 조사하였으며 Na-path 제어를 위한 구조적 특성은 XRD, FE-SEM으로 분석하였다. 분석결과에 따르면 기존 DC 마그네트론 스퍼터링 방법보다 상대적으로 더 치밀한 구조와 높은 반사율을 가지는 박막이 제작됨을 알 수 있었다. Mo 박막의 최적조건은 DC power 300 W, Ion-gun power 50 W, Ar flow rate 20 sccm 였다.

• Science of Emotion and Sensibility
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• v.1 no.1
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• pp.93-103
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• 1998

In this paper, we present change of human sensiblity when the 26 healthy female subjects were exposed with visual picture stimulus. We used Intermational Affective Picture System as the visual stimulus. The methods are AutoRegressive(AR) spectrum which is a linear method and Return Map which is a nonlinear mithod. SR spectrum may variability(HRV). The LF/HF of HRV and the variation of Return Map were analyzed from ECG signal of the female subjects. Return Map of RR intervals were analyzed by computiong the variation. When the subjets were stimulated by the pleasant pictures, LF/HF and variation were decreased compared with unpleasant stimulus, We may obtain good parameters for the measurement of the change of human sensibility for the visual picture stimulus.