• Korean Journal of Materials Research
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• v.27 no.10
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• pp.513-517
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• 2017

An optimum route to fabricate a hybrid-structured W powder composed of nano and micro size powders was investigated. The mixture of nano and micro W powders was prepared by a ball milling and hydrogen reduction process for $WO_3$ and W powders. Microstructural observation for the ball-milled powder mixtures revealed that the nano-sized $WO_3$ particles were homogeneously distributed on the surface of large W powders. The reduction behavior of $WO_3$ powder was analyzed by a temperature programmed reduction method with different heating rates in Ar-10% $H_2$ atmosphere. The activation energies for the reduction of $WO_3$, estimated by the slope of the Kissinger plot from the amount of reaction peak shift with heating rates, were measured as 117.4 kJ/mol and 94.6 kJ/mol depending on reduction steps from $WO_3$ to $WO_2$ and from $WO_2$ to W, respectively. SEM and XRD analysis for the hydrogen-reduced powder mixture showed that the nano-sized W particles were well distributed on the surface of the micro-sized W powders.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.29-29
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• 2009

현재 고집적 비휘발성 메모리 소자로는 MRAM (Magnetic Random Access Memory)과 PRAM (Phase Magnetic Random Access Memory)이 활발하게 미국과 일본, 한국 등에서 다양한 연구가 진행되어 오고 있다. 이 중에서 MRAM은 DRAM과 비슷한 10 ns의 빠른 읽기/쓰기 속도와 비휘발성 특성을 가지고 있으며, 전하를 저장할 커패시터가 필요 없고, 두 개의 자성충에 약 10 mA 정도의 전류를 가하면 그때 발생하는 약 10 Oe의 자장을 개개의 비트를 write하고, read 시에는 각 비트의 자기저항을 측정함으로써 데이터를 저장하고 읽을 있으므로, 고집적화가 가능성하다 [1]. 현재 우수한 박막 재료가 개발 되었으나, 고집적 MRAM 소자의 양산에는 해결 하여야 하는 문제점이 있다. 특히 다층 박막으로 구성되어 있으므로 식각 공정의 개발이 필수적이다. 지금까지 MRAM 재료의 식각은 주로 Ion milling, ICP, ECR등의 플라즈마 장치를 되었고, 식각 가스로는 할로겐 기체와 금속카보닐 형성을 위한 Co/$NH_3$와 $Ch_3OH$ 기체가 이용되고 있다. 그러나 할로겐 계열의 기체를 사용할 경우, 식각 부산물들의 높은 끓는점 때문에 식각 부산물이 박막의 표면에서 열적 탈착에 의하여 제거되지 않기 때문에 높은 에너지를 가지는 이온의 도움에 의한 식각이 필요하다. 또한 Cl 계열의 기체를 사용할 경우, 식각 공정 후, 시료가 대기에 노출되면 대기 중의 수분과 식각 부산물이 결합하여 부식 현상이 발생하게 된다. 그러므로 이를 방지하기 위한 추가 공정이 요구된다. 최근에는 부식 현상이 없고, MTJ 상부에 사용되는 Ta 또는 Ti Hard mask와의 높은 선택비를 가지는 $CH_3OH$ 또는 CO/$NH_3$가 사용되고 있다. 하부 박막에 따른 식각 특성에 연구와 다층의 박막의 식각 공정에 발생에 관한 발표는 거의 없다. MRAM을 양산에 적용하기 위하여서는 Main etch 공정에서 빠른 식각 공정이 필요하고, Over etch 공정에서 하부박막에 대한 높은 선택비가 요구된다. 그러므로 본 논문에서는 식각 변수에 따른 플라즈마 측정과 표면 반응을 비교하여 각 공정의 식각 메커니즘을 규명하고, Main Etch 공정에서는 $Cl_2$/Ar 또는 $BCl_3$/Ar 가스를 이용하여 식각 실험을 수행하고, Over etch 공정에는 낮은 Ta 박막 식각 속도를 가지는 $Ch_4/O_2$/Ar 또는 $Ch_3OH$/Ar 가스를 이용하고자 한다. 플라즈마 내의 식각종과 Ta 박막과의 반응을 XPS와 AES를 이용하여 분석하고, 식각 공정 변수에 따른 식각 속도, 식각 선택비와 식각 프로파일 변화를 SEM을 이용하여 관찰한다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.6
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• pp.246-252
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• 2011

The semiconducting $MnSi_{1.73}$ compound has been recognized as a thermoelectric material with excellent oxidation resistance and stable characteristics at elevated temperature. In the present work, we applied mechanical alloying (MA) technique to produce $MnSi_{1.73}$ compound using a mixture of elemental manganese and silicon powders. The mechanical alloying was carried out using a Fritsch P-5 planetary mill under Ar gas atmosphere. The MA powders were characterized by the X-ray diffraction with Cu-$K{\alpha}$ radiation, thermal analysis and scanning electron microscopy. Due to the observed larger loss of Si relative to Mn during mechanical alloying of $MnSi_{1.73}$, the starting composition of a mixture Mn-Si was modified to $MnSi_{1.83}$ and then $MnSi_{1.88}$. The single $MnSi_{1.73}$ phase has been obtained by mechanical alloying of $MnSi_{1.88}$ mixture powders for 200 hours. It is also found that the grain size of $MnSi_{1.73}$ compound powders analyzed by Hall plot method is reduced to 40 nm after 200 hours of milling.

• Applied Chemistry for Engineering
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• v.22 no.4
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• pp.384-389
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• 2011

We made suspension of fumed silica in polyethylene glycol (PEG), studied rheological behavior as functions of contents of silica, dispersion condition, PEG molecular weight, temperature and contents of humidity. Rheological behavior of suspension was determined critical shear rate and rise of viscosity using rheometer AR2000. Suspension were PEGs of molecular weight 200, 400, and 600. Fumed silica suspensions of which silica contents are 5, 7, 9, 13, and 18% were prepared by normal mixing, homogenization and bead milling process. We observed their rheological behaviors at 10, 20, 30, and $40^{\circ}C$. As the PEG molecular weight and contents of silica increase, the critical shear rate was lowered. As the temperature increased, the critical shear rate was increased. Humidity contents of dispersion don't influence on the critical shear rate, but dispersion processes greatly affect the critical shear rate. The critical shear rate of suspensions prepared by the mixing process was the lowest, and that of suspensions prepared by the bead milling process was the highest. The rise in the shear viscosity of suspensions prepared by the mixing process is higher than that of suspensions prepared by the bead milling process. This was dependent on the dispersion condition of silica particle by dispersion process.

• Progress in Superconductivity
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• v.4 no.2
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• pp.109-113
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• 2003

We have developed a planar-type single layer second-order $high-T_{c}$ SQUID gradiometer, which can detect the $d^2$$B_{z/}$dxdy of the second-order field gradient. This SQUID gradiometer consists of four-way 'clover-leaf' pick-up loops and is coupled directly to a 4-junction dc SQUID in such a way that the coupling polarity of the two diagonal loops is opposite to that of the other two loops. The pickup loops are intrinsically balanced for both uniform field and the 1 st-order field gradient. The $YBa_2$$Cu_3$$O_{7}$ thin film was made by pulsed laser deposition method on $SrTiO_3$ single crystal substrate and patterned by photolithography with Ar ion milling technique. Response of this gradiometer was tested for both uniform field and the 2nd-order field gradient. Details of the design, fabrication, and results will be discussed.

• Journal of Powder Materials
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• v.10 no.1
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• pp.46-50
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• 2003

Lee et al. reported that a mixture of Cu and Ta, the combination of which is characterized by a positive heat of mixing, $\{Delta}H_{mix}$ of +2 kJ/㏖, can be amorphized by mechanical alloying(MA). It is our aim to investigate to what extent the MA is capable of producing a non-equilibrium phase with increasing the heat of mixing. The system chosen is the binary $Cu_{30}Mo_{70}$ with $\{Delta}H_{mix}$=+19 kJ/㏖. The mechanical alloying was carried out using a Fritsch P-5 planetary mill under Ar gas atmosphere. The vial and balls are made of Cu containing 1.8-2.0 wt.%Be to avoid contaminations arising mainly from Fe when steel balls and vial are used. The MA powders were characterized by the X-ray diffraction, EXAFS and thermal analysis. We conclude that two phase mixture of nanocrystalline fcc-Cu and bcc-Mo with grain size of 10 nm is formed by the ball-milling for a 3:7 mixture of pure Cu and Mo, the evidence for which has been deduced from the thermodynamic and structural analysis based on the DSC, X-ray diffraction and EXAFS spectra.

• Journal of the Korean Ceramic Society
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• v.36 no.9
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• pp.887-892
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• 1999

The inner crack-like pore with controlled amount of Ca impurity in the high purity alumina single crystal sapphire had been created by micro-fabrication technique which includes ion implanation photo-lithography Ar ion milling and hot press technique. The crack-like pores in two-hour hot pressed specimen were extremely stable even after heat treating at 1,80$0^{\circ}C$ for 5 hours almost no healing was observed. But the crack-like pores in one-hour hot pressed specimen at 1,30$0^{\circ}C$ were healed by heat treatment and the amount of healing was increased with the heat treatment time and temperature and the amount of Ca addition. The edges of crack-like pore parallel to <1100> direction in (001) basal plane were stable but the edges normal to this direction in (00101) plane <1120> direction were unstable to facetting This means that the surface energy of alumina along the <1100> direction in (0001) basal plane in much lower than <1120> direction.

• Progress in Superconductivity and Cryogenics
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• v.5 no.2
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• pp.41-45
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• 2003

Resistance distribution in thin film type SFCL elements of different shunt layer thickness was investigated. The 300 nm thick film of 2 inch diameter was coated with a gold layer and patterned into 2 mm wide meander lines. The shunt layer thickness was varied by ion milling the shunt layer with Ar ions, and also by having the shunt layer grown in different thickness. The SFCL element was subjected to simulated AC fault current for measurements. It was immersed in liquid nitrogenduring the experiment. The resistance distribution was not affected by the shunt layer thickness at applied voltages that brought the temperature of the elements to similar values. This result could be explained with the concept of heat transfer from the film to the surroundings. The resistance distribution was independent of the shunt layer thickness because thick sapphire substrates of high thermal conductivity dominated the thermal conductance of the elements.

• Journal of Powder Materials
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• v.24 no.1
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• pp.29-33
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• 2017

Titanium carbide (TiC) powders are successfully synthesized by carburization of titanium hydride ($TiH_2$) powders. The $TiH_2$ powders with size lower than $45{\mu}m$ (-325 Mesh) are optimally produced by the hydrogenation process, and are mixed with graphite powder by ball milling. The mixtures are then heat-treated in an Ar atmosphere at $800-1200^{\circ}C$ for carburization to occur. It has been experimentally and thermodynamically determined that the de-hydrogenation, "$TiH_2=Ti+H_2$", and carburization, "Ti + C = TiC", occur simultaneously over the reaction temperature range. The unreacted graphite content (free carbon) in each product is precisely measured by acid dissolution and by the filtering method, and it is possible to conclude that the maximal carbon stoichiometry of $TiC_{0.94}$ is accomplished at $1200^{\circ}C$.

• Progress in Superconductivity
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• v.1 no.2
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• pp.146-150
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• 2000

Step edge Josephson junctions in c-axis oriented $YBa_2Cu_3O_7$ films were fabricated on $CeO_2$ buffered sapphire substrates. The step angle was controlled in the wide range of $20^{\circ}\sim75^{\circ}$ by the Ar ion milling technique. I-V curves of junction fabricated on the thickness ratio of $\sim$0.8 and the step angle of $35^{\circ}$ were exhibited RSJ-like behavior with $I_CR_N$ product of $\sim250{\mu}A$ and critical current density of $\sim2\times10^4A/cm^2$ at 77 K. Critical current of step edge junction was increased linearly with decreasing temperature but the normal resistance was almost constant. Total samples of step edge Josephson junction was satisfied a scaling behavior of $I_CR_N{\propto}(J_C)^{0.5}$.