• Journal of Magnetics
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• 제7권3호
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• pp.63-71
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• 2002

Three fabrication techniques for forming thin barrier layer with uniform thickness and large barrier height in magnetic tunnel junction (MTJ) are discussed. First, the effect of immiscible element addition to Cu layer, a high conducting layer generally placed under the MTJ, is investigated in order to reduce the surface roughness of the bottom ferromagnetic layer, on which the barrier is formed. The Ag addition to the Cu layer successfully realizes the smooth surface of the ferromagnetic layer because of the suppression of the grain growth of Cu. Second, a new plasma source, characterized as low electron energy of 1 eV and high density of $10^{12}$ $cm^{-3}$, is introduced to the Al oxidation process in MTJ fabrication in order to reduce damages to the barrier layer by the ion-bombardment. The magnetotransport properties of the MTJs are investigated as a function of the annealing temperature. As a peculiar feature, the monotonous decrease of resistance area product (RA) is observed with increasing the annealing temperature. The decrease of the RA is due to the decrease of the effective barrier width. Third, the influence of the mixed inert gas species for plasma oxidization process of metallic Al layer on the tunnel magnetoresistance (TMR) was investigated. By the use of Kr-O$_2$ plasma for Al oxidation process, a 58.8 % of MR ratio was obtained at room temperature after annealing the junction at $300{^{\circ}C}$, while the achieved TMR ratio of the MTJ fabricated with usual Ar-$0_2$ plasma remained 48.4%. A faster oxidization rate of the Al layer by using Kr-O$_2$ plasma is a possible cause to prevent the over oxidization of Al layer and to realize a large magnetoresistance.

• 한국결정성장학회지
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• 제9권1호
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• pp.107-112
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• 1999

고주파 반응성 스퍼터링에 의하여 ZnSe/GaAs 박막을 성장하였다. 박막성장을 위한 본 시스템에서의 최적조건을 찾기 위하여 Ar 압력, sputter 입력전력, 기판온도, 기판과 target 간격의 변화 등을 시도하였다. 성장된 결정의 표면과 격면을 전자현미경으로 관찰했을 때 표면이 균일하게 성장되었으며 기판과 박막의 계면이 평활함을 알 수 있었다. DCRC 측정에 의해 격자 부정합에 의한 변형과 부정합률을 구했다. Photoluminescence 측정으로부터 질소를 주입하지않고 성장한 ZnSe/GaAs 시료는 bound exciton $I_2$세기가 $I_1$보다 우세하게 나타났고 bound exciton $I_2$은 깊은 받개준위인 $I_1\;^d$를 나타냄을 확인할 수 있었다. 성장 중에 질소를 주입한 ZnSe/GaAs 시료에서는 $I_1$ 봉우리가 $I_2$봉우리보다 세기가 매우 컸으며 반폭치값도 작게 나타났다. 이때 bound exciton $I_1$의 근원은 질소의 doping으로 인하여 방출되는 봉우리이며 p형 ZnSe/GaAs 박막으로 성장되었음을 확인하였다.

• 한국재료학회지
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• 제11권7호
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• pp.580-584
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• 2001

Ti과 Si의 비가 서로 다른 종류의 타 을 $Ar/N_2$의 혼합기체를 사용하여 rf magnetron sputtering방법으로 증착된 Ti-Si-N박막의 증착특성에 대해 연구하였다. Ti-Si-N박막의 조성과 증착률은 각 타 Ti/Si의 비율과 증착시의 질소기체의 유량에 따라 크게 변하였다. 이것은 Ti과 Si의 nitriding 정도의 차이로 인한 서로 다른 sputter yield에 의한 것으로 나타났다. Si이 비교적 적게 포함된 Ti-Si-N박막은 증착시부터 박막내 TiN의 결정화가 일어났으며, 낮은 비저항을 나타내었다. N의 함량의 증가는 박막의 밀도와 압축응력을 증가시켜 Ti-Si-N박막의 확산방지 능력에 큰 영향을 미치는 인자로 나타났다. 본 연구에서 $N_2$의 유략과 타 의 Ti/Si비율을 조절함으로써 효율적인 확산방지막인 Ti-Si-N 박막의 공정조건을 확립할 수 있었다. 박막의 공정조건을 확립할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.204-205
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• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

• 대한전자공학회논문지
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• 제26권6호
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• pp.48-56
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• 1989

밀착형 1차원 영상감지소자로서 팩시밀리에 사용될 광도전막을 사일랜듸 글로방전 분해법으로 제작하였다. 우선 rf전력, 사일랜유량, 분위기 가스압, $H_2/SiH_4$비 및 기판온도의 증착조건에 따른 단층광전도막의 전기적 및 광학적특성을 조사하였다. 이 단층구조 영상감지막은 광전감도 0.85와 100lux 조도하에서 $I_{ph}/I_d=100$을 나타내었다. 그러나 이러한 단층박막은 양 전극으로 부터의 캐리어주입으로 인해 큰 암전류도 0.2nA 이하를 나타내었다. 또한 다층막은 단층막에 비해 단파장 가시광영역이 보상되어 팩시밀리용 1차원 영상감지소자에 사용될 만한 결과를 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.103-107
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• 2003

The inductively coupled plasma(ICP) etching process was selected to fabricate RF Surface Acoustic Wave(SAW) filters and a Pt thin film was sputtered on a $LiTaO_3$ substrate applied to electrode materials to reduce the spurious response and improve the power durability. Steep sidewall pattern was achieved employing $C_4F_8/Ar/Cl_2$ gas chemistry. We investigated an etching mechanism and parameter dependence of the Pt thin film about $C_4F_8$ addition. Sidewall etch angle was about $80^{\circ}$ at the $C_4F_8$ 20% mixing ratio. Fabricated SAW filter is consists of some series and parallel arm SAW resonators which work as impedance elements and show capacitance characteristics at out of the passband. It can be modified for $800{\sim}900\;MHz$ RF filters. External matching circuits were unnecessary.