• 한국전기전자재료학회논문지
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• 제24권4호
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• pp.303-308
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• 2011

The Gallium-doped ZnO(GZO) film deposited at a temperature of $200^{\circ}C$ and a pressure of 10 mtorr has an optical transmittance of 89.0% and a resistivity of $2.0\;m{\Omega}{\cdot}cm$ because of its high crystallinity. Effect of $Al_2O_3$ oxide buffer layers on the optical and electrical properties of sputtered ZnO films were intensively investigated for developing the electrodes of opto-electronic devices which demanded high optical transmittance and low resistivity. The use of $Al_2O_3$ buffer layer could increase optical transmittance of GZO film to 90.7% at a wavelength of 550 nm by controlling optical spectrum. Resistivity of deposited GZO films were much dependent on the deposition condition of $O_2/(Ar+O_2)$ flow rate ratio during the buffer layer deposition. It is considered that the $Al_2O_3$ buffer layer could increase the carrier concentration of the GZO films by doping effect of diffused Al atoms through the rough interface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.45-45
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• 2007

Capacitors among the embedded passive components are most widely studied because they are the major components in terms of size and number and hard to embed compared with resistors and inductors due to the more complicated structure. To fabricate a capacitor-embedded PCB for in-line process, it is essential to adopt a low temperature process (<$200^{\circ}C$). However, high dielectric materials such as ferroelectrics show a low permittivity and a high dielectric loss when they are processed at low temperatures. To solve these contradicting problems, we studied BMN materials as a candidate for dielectric capacitors. processed at PCB-compatible temperatures. The morphologies of BMN thin films were investigated by AFM and SEM equipment. The electric properties (C-F, I-V) of Pt/BMN/Cu/polymer were evaluated using an impedance analysis (HP 4194A) and semiconductor parameter analyzer (HP4156A). $Bi_2Mg_{2/3}Nb_{4/3}O_7$(BMN) thin films deposited on copper clad laminate substrates by sputtering system as a function of Ar/$O_2$ flow rate at room temperature showed smooth surface morphologies having root mean square roughness of approximately 5.0 nm. 200-nm-thick films deposited at RT exhibit a dielectric constant of 40, a capacitance density of approximately $150\;nF/cm^2$, and breakdown voltage above 6 V. The crystallinity of the BMN thin films was studied by TEM and XRD. BMN thin film capacitors are expected to be promising candidates as embedded capacitors for printed circuit board (PCB).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.448-448
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• 2010

Magnetic random access memory (MRAM) has made a prominent progress in memory performance and has brought a bright prospect for the next generation nonvolatile memory technologies due to its excellent advantages. Dry etching process of magnetic thin films is one of the important issues for the magnetic devices such as magnetic tunneling junctions (MTJs) based MRAM. CoFeB is a well-known soft ferromagnetic material, of particular interest for magnetic tunnel junctions (MTJs) and other devices based on tunneling magneto-resistance (TMR), such as spin-transfer-torque MRAM. One particular example is the CoFeB - MgO - CoFeB system, which has already been integrated in MRAM. In all of these applications, knowledge of control over the etching properties of CoFeB is crucial. Recently, transferring the pattern by using milling is a commonly used, although the redeposition of back-sputtered etch products on the sidewalls and the low etch rate of this method are main disadvantages. So the other method which has reported about much higher etch rates of >$50{\AA}/s$ for magnetic multi-layer structures using $Cl_2$/Ar plasmas is proposed. However, the chlorinated etch residues on the sidewalls of the etched features tend to severely corrode the magnetic material. Besides avoiding corrosion, during etching facets format the sidewalls of the mask due to physical sputtering of the mask material. Therefore, in this work, magnetic material such as CoFeB was etched in an ICP etching system using the gases which can be expected to form volatile metallo-organic compounds. As the gases, carbon monoxide (CO) and ammonia ($NH_3$) were used as etching gases to form carbonyl volatiles, and the etched features of CoFeB thin films under by Ta masking material were observed with electron microscopy to confirm etched resolution. And the etch conditions such as bias power, gas combination flow, process pressure, and source power were varied to find out and control the properties of magnetic layer during the process.

• 한국수소및신에너지학회논문집
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• 제10권1호
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• pp.59-69
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• 1999

반응성 스퍼터링법으로 AIN 박막을 증착하여 Al/AlN/Si구조의 MIS소자용 절연박막으로서의 응용가능성에 대해 연구하였다. 기판온도 $300^{\circ}C$, RF power 150W, 스퍼터링 압력 5mTorr, 아르곤과 질소 가스유량비 1:1 의 조건에서 5%의 수소가스를 부가적으로 첨가해 주는 시기에 따른 AIN박막의 표면형상변화, I-V특성, C-V특성, 조성을 조사하였다. 수소첨가에 따라 증착속도는 상당히 감소하였으나 표면형상 및 거칠기는 크게 변하지 않았다. I-V특성에서는 AIN 박막 증착시 초기 20분간 수소첨가를 시킨 경우가 후기 20분간 수소첨가를 시킨 경우보다 보다 우수한 절연특성을 보였다. 또한 C-V특성에서도 수소가 첨가됨에 따라 플랫밴드전압이 매우 낮아졌으며, 초기 20분간 수소첨가를 시킨 경우는 히스테리시스를 거의 보이지 않았으나, 후기 20분간 수소첨가를 시킨 경우는 상당한 히스테리시스를 보였다. AES를 이용한 조성분석을 통해 수소가스가 첨가됨에 따라 AIN박막내의 산소농도가 낮아진다는 사설을 발견하였고, 이에 따라 박막의 절연특성 및 C-V특성이 향상될 수 있는 가능성을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.220-220
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• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

• Bulletin of the Korean Chemical Society
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• 제35권9호
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• pp.2615-2620
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• 2014

Ni/$La_2O_3$ with a high dispersion was prepared by reduction of $La_2O_3$ perovskite oxide to examine the catalytic activity for the $CO_2-CH_4$ reaction. The Ni/$La_2O_3$ catalyst was found to be highly active for the reaction. The ratios of $H_2$/CO were measured in a flow of the reaction mixture containing $CO_2/CH_4$/Ar using an on-line gas chromatography system operated at 1 atm and found to be varied with temperature between 0.66 and 1 in the temperature range of $500-800^{\circ}C$. A kinetic study of the catalytic reaction was performed in a static reactor at 40 Torr total pressure of $CO_2/CH_4/N_2$ by using a photoacoustic spectroscopy technique. The $CO_2$ photoacoustic signal varying with the concentration of $CO_2$ during the catalytic reaction was recorded as a function of time. Rates of $CO_2$ disappearance in the temperature range of $550-700^{\circ}C$ were obtained from the changes in the $CO_2$ photoacoustic signal at early reaction stage. The plot of ln rate vs. 1/T showed linear lines below and above $610^{\circ}C$. Apparent activation energies were determined to be 10.4 kcal/mol in the temperature range of $550-610^{\circ}C$ and 14.6 kcal/mol in the temperature range of $610-700^{\circ}C$. From the initial rates measured at $640^{\circ}C$ under various partial pressures of $CO_2$ and $CH_4$, the reaction orders were determined to be 0.43 with respect to $CO_2$ and 0.33 with respect to $CH_4$. The kinetic results were compared with those reported previously and used to infer a reaction mechanism for the Ni/$La_2O_3$-catalyzed $CO_2-CH_4$ reaction.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• 방사성폐기물학회지
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• 제8권1호
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• pp.41-48
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• 2010

전해정련공정을 통해 생산된 우라늄 전착물은 약 30%의 용융염을 포함하고 있으므로, 순수한 우라늄을 회수하여 금속 잉곳으로 용이하게 제조하기 위해서는 용융염을 먼저 제거하는 공정이 필요하다. 우라늄 전착물의 염증류 거동을 고찰하기 위해서는 염증류의 주요 공정변수인 유지온도와 진공압의 염제거율에 대한 영향를 고찰해야 한다. 이전 연구에서 우라늄전착물에 대한 염증류 거동에 대해 Hertz-Langmuir 관계식을 적용하여 각 용융염의 휘발 조건에 대해 염휘발계수를 얻을 수 있었으며 이로부터 우라늄 전착물에 대해 99% 이상의 염제거율을 나타내는 염증류공정의 조업조건을 도출하였다[1]. 한편, 염증류 장치에서 사용되는 재질인 스테인리스강에 대해 우라늄 전착물에서 염휘발된 우라늄 금속이 스테인리스강의 주성분인 철, 니켈, 크롬 등과 공정(eutectic melt)을 형성하지 않는 온도에서 염증류공정을 수행해야 하는 제한 조건이 따른다. 이번 연구에서는 우라늄 금속과 스테인리스강과의 반응성을 검토함으로써 우라늄 전착물의 염을 99% 이상 제거할 수 있는 조건을 확인하였다. 그리고 염증류 속도를 증진시키며 휘발된 염을 더 효율적으로 회수하기 위해 공급되는 알곤 흐름에 의한 염증류 장치의 열해석을 수행함으로써 알곤 흐름에 의한 우라늄 전착물에 대한 염증류 거동을 고찰하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.221-221
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• 2013

Vertical LED (VLED) has been recognized as a way to obtain the high-power LED due to their advantages [1]. However, approximately 4% of the light generated from the active region is extracted, if the light extraction from side walls and back side is neglected because of Fresnel reflection (FR) and total internal reflection (TIR) [2,3]. In this study, the optical simulation of the VLED with the various microstructures was performed. Among them, the microlens having the diameter of 3 ${\mu}m$ and the height of 1.5 ${\mu}m$ shown the best result was chosen, and then, optimized microlens was formed on a GaN template using conventional semiconductor process. Various microstructures were proposed to improve the light extraction efficiency (LEE) of the VLED for the simulation. The LEE was simulated using LightTools based on a Monte Carlo ray tracing. The microstructures with hemisphere, cone, truncated and cylinder pattern having diameter of 3 ${\mu}m$ were employed on the top layer of the VLED respectively. The improvement of the LEE by using the microstructure is 87% for the hemisphere, 77% for the cone, 53% for the truncated, 21% for the cylinder, compared with the LEE of the flat surface at the reflectance of 85%. The LEE was increased by 88% at the height of 1.5 ${\mu}m$, compared with the LEE of the flat surface. We found that the microlens on the top layer is the most suitable for increasing the LEE. In order to apply the proposed microlens on n-GaN surface, we fabricated microlens on a GaN template. A photoresist array having hexagonal-closed packed microlens was fabricated on the GaN template. Then, optimization of etching the GaN template was performed using a dry etching process with ICP-RIE. The dry etching carried out using a gas mixture of Cl2 and Ar, each having a flow rate of 16 sccm and 10 sccm, respectively with RF power of 50 W, ICP power of 900 W and chamber pressure of 2 mTorr was the optimum etching condition as shown in Fig. 2(a).

• 한국수자원학회논문집
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• 제50권10호
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• pp.703-714
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• 2017

본 연구에서는 IPCC가 발간한 AR5 의 시나리오 중 임의로 선택된 RCP 4.5와 RCP 8.5 기후변화 시나리오가 용담댐 유역과 호내의 유량과 수질변화에 미치는 영향을 분석 및 그 방법론을 수립하기 위해서 SWAT 모델과 CE-QUAL-W2 모델을 차례로 사용하였다. 기후변화 시나리오는 용담댐 유역에 대해 상세화 된 자료를 사용하였으며 2016~2095년의 기간을 2016~2035년, 2036~2065년 그리고 2066~2095년의 세 가지의 기간으로 구분하고 또한 각 연도별로 5월과 10월 사이의 우기(Wet Season)와 11월과 4월 사이의 건기(Dry Season)로 또한 구분하여 분석하였다. 전체 모의 기간에 대해 산술평균한 용담댐 유역의 유량과 TSS 및 TP는 RCP 4.5가 RCP 8.5 보다 큰 것으로 나타나고 TN의 경우 다른 경향을 나타내었다. 반면, 모델의 예측결과를 기간별 또는 연중 강우특성별로 구별하여 분석한 경우에는 각 경우마다 서로 다른 결과를 나타내고 있다. 기후변화 시나리오가 진행됨에 따라 전반적으로 강우일수는 감소하고 강우강도는 증가하여 갈수기에는 오염물질의 유출이 감소하고, 홍수기에는 오염물질의 유출이 증가하여 연간 오염물질 유출량이 홍수기에 집중되는 특성을 나타내었다. 상기와 동일한 기간에 대해 SWAT 모델에서 생성된 유역의 자료를 CE-QUAL-W2 모델의 경계조건으로 사용하여 용담댐의 수질변화특성을 모의하였다. TSS와 TP농도는 하절기 강우량의 증가에 따라 특히, 높은 값을 나타내는 것으로 분석되었으나, 고형물질에 잘 흡착되지 않는 TN은 다른 경향이 나타났다. 따라서 기후변화에 의한 장래의 유량 및 수질 변화는 전반적인 경향과 더불어 지역적, 시기적 특성을 또한 반영하여 분석하는 것이 바람직하다고 판단되며 이에 따라 갈수 및 홍수에 의한 시기별, 지역별 유량 및 수질 관리 대책이 별도로 필요할 것으로 판단된다.