• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.132-132
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• 2010

In the nano-scale Si processing, patterning processes based on multilevel resist structures becoming more critical due to continuously decreasing resist thickness and feature size. In particular, highly selective etching of the first dielectric layer with resist patterns are great importance. In this work, process window for the infinitely high etch selectivity of silicon oxynitride (SiON) layers and silicon nitride (Si3N4) with EUV resist was investigated during etching of SiON/EUV resist and Si3N4/EUV resist in a CH2F2/N2/Ar dual-frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters, such as the CH2F2 and N2 flow ratio and low-frequency source power (PLF). It was found that the CH2F2/N2 flow ratio was found to play a critical role in determining the process window for ultra high etch selectivity, due to the differences in change of the degree of polymerization on SiON, Si3N4, and EUV resist. Control of N2 flow ratio gave the possibility of obtaining the ultra high etch selectivity by keeping the steady-state hydrofluorocarbon layer thickness thin on the SiON and Si3N4 surface due to effective formation of HCN etch by-products and, in turn, in continuous SiON and Si3N4 etching, while the hydrofluorocarbon layer is deposited on the EUV resist surface.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.3
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• pp.87-92
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• 1997

Inductively coupled Cl$_{2}$ plasma has been studied to etch Pt thin films, which hardly form volatile compound with any reactive gas at normal process temperature. Low etch rate and residue problems are frequently observed. For higher etch rate, high density plasma and higher process temperature is adopted observed. For higher etch rate, high density plasma and higher process temperature is adopted and thus SiO$_{2}$ is used as for patterning mask instead of photoresist. The effect of O$_{2}$ or Ar addition to Cl$_{2}$ was investigated, and the chamber pressure, gas flow rate, surce RF power and bias RF power are also varied to check their effects on etch rate and selectivity. The major etching mechanism is the physical sputtering, but the ion assisted chemical raction is also found to be a big factor. The proposs can be optimized to obtain the etch rate of Pt up to 200nm/min and selectivity to SiO$_{2}$ at 2.0 or more. Patterning of submicron Pt lines are successfully demonstrated.

• Journal of the Korean Ceramic Society
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• v.33 no.5
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• pp.514-518
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• 1996

Sb doped SnO2(ATO: Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using an oxide target and the electrical characteristics of ATO films were investigated. The experimen-tal conditions are as follows :Ar flow rate ; 0~100 sccm deposition tempera-ture ; 250~40$0^{\circ}C$ DC sputter powder ; 150~550W and sputteing pressure ; 2~7 mTorr, The thickness of depositied ATO films were 600$\AA$~1100 $\AA$ ranges. The resistivity of ATO films was decreased due to the increase of the crystallinity of ATO films with deposition temperature. The decrease of carrier concentration of films with the increase of oxygen flow rate and working pressure is responsible for the increase of resistivity. Increasing of sputtering power raised the resistivity of films by decreasing the carrier mobility.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.11
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• pp.1476-1482
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• 2001

Turbulent boundary layer over a flat plate was disturbed by installing an elliptic cylinder with an axis ratio of AR=2. For comparison, the same experiment was carried out for a circular cylinder having the same vertical height. The surface pressure and the heat transfer coefficient on the flat plate were measured with varying the gap distance between the elliptic cylinder and the flat plate. The mean velocity and the turbulent intensity profile of the streamwise velocity component were measured using a hot-wire anemometry. As a result, the flow structure and the local heat transfer rate were modified by the interaction between the cylinder wake and the turbulent boundary layer as a function of the critical gap ratio where the regular vortices start to shed. For the elliptic cylinder, the critical gap ratio is increased and the surface pressure on the flat plate is recovered rapidly at downstream location, compared with the equivalent circular cylinder. The maximum heat transfer rate occurs at the gap ratio of G/B = 0.5, where the flow interaction between the lower shear layer of the cylinder wake and the turbulent boundary layer is strong.

• Journal of Biomedical Engineering Research
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• v.17 no.1
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• pp.43-48
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• 1996

We investigated the energistics of the physiological heart model by comparing predictive indexes of the myocardial oxygen consumption (MOC), such as tension-time index (R), tension-time or force-time inteual (FTI), rate-pressure product (RPP), pressure-work index, and systolic pressure-volume area (PVA) when using the electro-hydraulic left ventricular device (LVAD). We developed the model of LVAD incorporated the closed-loop cardiovascular system with a baroreceptor which can control heart rate and time-varying elastance of left and right ventricles. On considering the benefit of the LVAD, the effects of various operation modes, especially timing of assistance, were evaluated using this coupled computer model. Overall results of the computer simulation shows that our LVAD can unload the ischemic (less contractile) heart by decreasing the MU and increasing coronary flow. Because the pump ejection at the end diastolic phase of the natural heart may increase the afterload of the left ventricle, the control scheme of our LVAD must prohibit ejecting at this time. Since the increment of coronary flow is proportional to the peak aortic pressure after ventricle contraction, the LVAD must eject immediately following the closure of the aortic valve to increase oxygen availability.

• Journal of the Korean Recycled Construction Resources Institute
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• v.9 no.3
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• pp.295-302
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• 2021

Surface modification of recycled plastic film-based aggregates is demonstrated to enhance the interaction between aggregates and cement paste. It is shown that the oxygen(O₂) atmospheric pressure plasma(APP) treatment leads to a drastic increase in hydrophilicity. In case of the plasma treatment at 100W of RF power, 15/4sccm of O₂/Ar flow rate and 30sec of discharging time, the water contact angle on the aggregates surface decreased from 104.5° to 44.0°. In addition, the contact angle of surface modified aggregates kept in air increased with time elapse. Improvement of hydrophilicity can be explained by the formation of new hydrophilic oxygen functional groups which is identified as C-OH, C-O-C, C=O, -COOH by X-ray photoelectron spectroscopy(XPS) analysis and Fourier-transform infrared spectroscopy(FT-IR). Therefore, it can be concluded that the plasma treatment process is an effective method to improve adhesion of the recycled plastic film-based aggregates and cement paste.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.5
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• pp.802-808
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• 1994

The purpose of this paper is to describe an application of plasma polymerized thin film as an electron beam resist. Plasma polymerized thin film was prepared using an interelectrode capacitively coupled gas-flow-type reactor, and chosen methylmethacrylate(MMA)and methylmethacrylate-tetrameth-yltin(MMA-TMT) as a monomer. This thin films were also delineated by the electron-beam apparatus with an acceleration voltage of 30kV and an expose dose ranging from 20 to 900$\mu$C/cmS02T. The delineated pattern in the resist was developed with the same reactor which is used for polymerization using an argon as etching gas. The growth rate and etching rate of the thin film is increased with increasing of discharge power. Thin films by plasma polymerization show polymerization rate of 30~45($\pm$3) A/min, and etching rate of 440($\pm$30) A/min during Ar plasma etching at discharge power of 100W. In apparently lower than that of conventional PMMA, but the plasma-etching rate of PP(MMA-TMT) was higher than that of PPMMA.

• The Journal of Asian Finance, Economics and Business
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• v.7 no.12
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• pp.863-867
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• 2020

This study was conducted on financial data of 38 economic groups listed on Vietnam's stock market for the period 2009 - 2019 and it aims to provide an empirical evidence on the impact of working capital management policy on performance in all phases of the economic cycle of Vietnamese economic groups. The study uses FGLS estimation method with 2 dependent variables ROA, GOP, independent variables including INV, AR, AP, CCC, dummy variable representing different phases of the economic cycle, variables Control includes CAT, CR, LEV, SZ, GR. Research shows that the greater the level of investment by companies in liquid assets corresponding to a certain level of activity (shown by average days of inventory (INV), average days of collection. (AR), cash flow cycle (CCC)) the lower the rate of return on assets. The study also provides additional evidence of the negative effects of economic crisis on the performance of economic groups. The study also shows that the number of short-term asset cycles has a positive impact on operational efficiency, and the level of debt use has a negative impact on operational efficiency. This result implies that the managers of economic groups can increase the efficiency of businesses through a reasonable working capital policy.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.210.2-210.2
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• 2016

An inductively coupled plasma source was prepared for the deposition of a-C:H thin film. Properties of the inductively coupled plasma source are investigated by fluid simulation including Navier-Stokes equations and home-made tuned single Langmuir probe. Signal attenuation ratios of the Langmuir probe harmonic frequency were 13.56Mhz and 27.12Mhz. Dependencies of plasma parameters on process parameters were accord with simulation results. Ar/CH4 plasma simulation results shown that hydrocarbon radical densities have their lowest value at the vicinity of gas feeding line due to high flow velocity. For input power density of 0.07W/cm3, CH radical density qualitatively follows electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density. The result suggest that optimization of discharge power is important for controlling deposition film quality in high density plasma sources.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.10 no.6
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• pp.743-752
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• 1998

Experiments were performed to characterize single-phase heat transfer behavior of submerged liquid jet with multiple nozzle normally impinging on the smooth and extended surfaces. Arrays of 9 and 36 nozzles were used, with diameters of 0.5 to 2.0mm providing nozzle area ratio (AR) from 0.05 to 0.2. The square pin fin arrays were chosen as extended surfaces and the effects of geometrical parameters such as fin height, the ratio of fin width to channel width on heat transfer enhancement were examined. Single nozzle characteristics were also evaluated for comparison. The results clearly showed that heat transfer enhancement could be realized by using multiple nozzles at the constant volume flow rate. The average Nusselt number of multiple nozzle impingement on the smooth surface was correlated by the following equation : Nu/$Pr\frac{1}{3}=0.94 Re^{0.56}N^{-0.12}AR^{0.50}$The average heat transfer coefficients of multiple nozzle impingement on the extended surfaces decreased with increasing fin height and the ratio of fin width to channel width. The effectiveness of ex-tended surfaces ranged from 1.5 to 3.5 depending on the fin height, the ratio of fin width to channel width of pin fin arrays, nozzle number and nozzle area ratio.