• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.3
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• pp.122-126
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• 2012

The properties of Al-doped ZnO (AZO) films were investigated as a function of $H_2/(Ar+H_2)$ gas ratio using an AZO (2 wt% $Al_2O_3$) ceramic target in a radio frequency (RF) magnetron sputtering system. The deposition process was done at $200^{\circ}C$ and in $2{\times}10^{-2}$ Torr working pressure and with various ratios of $H_2/(Ar+H_2)$ gas. During the AZO film deposition process, partial $H_2$ gas affected the AZO film characteristics. The electron resistivity (${\sim}9.21{\times}10^{-4}\;{\Omega}cm$) was lowest and mobility (${\sim}17.8\;cm^2/Vs$) was highest in AZO films when the $H_2/(Ar+H_2)$ gas ratio was 2.5 %. When the $H_2/(Ar+H_2)$ gas ratio was increased above 2.5 %, the electron resistivity increased and mobility decreased with increasing $H_2/(Ar+H_2)$ gas ratio in AZO films. The carrier concentration increased with increasing $H_2/(Ar+H_2)$ gas ratio from 0 % to 7.5 %. This phenomenon was explained by reaction of hydrogen and oxygen and additional formation of oxygen vacancy. The average optical transmission in the visible light wavelength region over 90 % and an orientation of the deposition was [002] orientation for AZO films grown with all $H_2/(Ar+H_2)$ gas ratios.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.6
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• pp.483-488
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• 1999

The optimal mixing condition of four components gas(Ne,Xe,He,Ar) in PDPs was caculated by a numerical simulation method. The dominated reactions in which $Xe^*(^3P_1)$ is produced and decays were investigated in three components gas (Ne,Xe,He) and our new components gas (Ne,Xe,He,Ar). A peak point of $Xe^*$ density appears in the range of 0.1% to 2% of Ar mixture ratio. The results of simulation show that the direct exitation of Xe by electrons has the greatest influence on the inceasing $Xe^*$ density in both gas mixtures.

• Journal of the Korean Magnetics Society
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• v.4 no.1
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• pp.32-38
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• 1994

We have investigated the effects of sputtering Ar gas pressure on magnetic and magneto-optical properties in compositionally modulated Co/Pt superlattice thin films. The samples were prepared by dc magnetron sputtering. Sputtrering Ar gas pressure was varied from 2 to 30 mTorr. The microstructure of the samples was examined by scanning electron microscope and the x-ray diffractometry. The magnetization, the Kerr rotation angle, and the reflectivity of the samples were measured. The columnar structure was developed, and the coercivity was drasti- cally increased, when the sputtering Ar gas pressure was higher than 20 mTorr. We explained that the variation of the magnetization, the Kerr rotation angle, and the reflectivity was related with the microstructure influenced by the variation of the Ar gas pressure.

• Journal of the Korean Magnetics Society
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• v.2 no.2
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• pp.119-124
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• 1992

We have investigated the effects of sputtering Ar gas pressure on magnetic and magneto-optical properties in compositionally modulated Co/Pd superlattice thin films. The samples were prepared by dc magnetron sputtering from 2-in.-diam Co and Pd targets by alternately exposing the substrates to targets. Sputtering Ar gas pressure was varied from 2 to 30 mTorr. All samples had same bilayer thicknesses composed of 2-$\AA$-thick Co and 9-$\AA$-thick Pd sublayers. It was observed that the colum-nar structure was more distinctively developed with increasing Ar gas pressure. We observed that the intrinsic uniaxial anisotropy energy, magnetization and polar Kerr rotation were decreased with increasing Ar gas pressures. Large coercivity and perfect squareness were attained by the deposition at the high Ar gas pressure. We believe that the results are mainly ascribed the variation of micro-structure with sputtering Ar gas pressure.

• Journal of Welding and Joining
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• v.13 no.1
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• pp.127-137
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• 1995

The possibility of new GMAW process using economic shielding gases including CO$_{2}$ gas was investigated on the effect of shielding gas on weldabilty. In the optimum welding condition using 600A power source, FCAW process showed low depositions rate, 114 g/min at 300A, but new GMAW using other mixed shielding gases exhibited high deposition rate, 208-224 g/min at 450A. TIME gas, Ar+CO$_{2}$ gas and Ar+CO$_{2}$+O$_{2}$ gas as a shielding gas were able to be used to the very high welding current(450A), moreover TIME gas and Ar+CO$_{2}$ gas showed the highest arc stability among shielding gases studied in this experiments. The weld penetration was performed by axial spray transfer mode of weld droplet. On the basis of workability, weldability and economic point of view, Ar mixture (80%Ar+20%CO$_{2}$) gas was recommended as a shielding gas for the development and application of new GMAW process. This shielding gas showed the low spatter, good weld quality, stable arc and low cost at the region of high welding current.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.5
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• pp.29-35
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• 1999

Inductively coupled plsama etching of platinum thin film was studied using $O_2$ addition to $Cl_2$/Ar gas plasma. In this study, Pt etching mechanism was investigated with Ar/$Cl_2$ /$O_2$ gas plasma by using XPS and QMS. Ion current density was measured with Ar/$Cl_2$ /$O_2$ gas plasma by using single Langmuir probe. It was confirmed by using QMS and single Langmuir probe that Cl and Ar species rapidly decreased and ion current density was also decreased with increasing $O_2$ gas ratios. These results implied that the decrease of Pt etch rate is due to the decrease of reactive species ans ion current density with increasing $O_2$ gas mixing ratios. A maximum etch rate of 150nm/min and the oxide selectivity of 2.5 were obtained at Ar/$Cl_2$ /$O_2$ flow rate of 50 seem, RF power of 600 W, dc bias voltage of 125 V, and the total pressure of 10 mTorr.

• Journal of Welding and Joining
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• v.30 no.2
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• pp.70-75
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• 2012

In this study, effect of nitrogen volume in the shielding gas of Ar-$N_2$ mixing gas on the bead shape, hardness and microstructure of GTA welds of 3mm thick Commercial Pure Ti was investigated. As the nitrogen volume increased, the welding current for full penetration was reduced and hardness in the fusion zone significantly increased compared with that of the base metal, but there is no difference in the hardness of HAZ. Microstructure in the fusion zone with pure Ar gas changed from equiaxed alpha of the base metal to serrated alpha. On the other hand, microstructure using Ar-$N_2$ mixing gas changed to acicular alpha. With the increasing of nitrogen content, the amount of acicular alpha increased and the size of that was fine.

• Journal of Welding and Joining
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• v.28 no.5
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• pp.93-98
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• 2010

The properties of GTA weld for ferritic stainless steel have been studied with different $O_2$ contents in Ar shielding gas at the constant welding speed. A small amount of $O_2$ (0.01~1.0%) was mixed in Ar shielding gas in order to improve the weld penetration. The fully penetrated GTA weld was acquired at 160A weld current shielded by pure Ar gas. Addition of oxygen larger than 0.1% made a full penetration at lower weld current than 160A. The small addition of $O_2$ in Ar shielding gas improved the penetration properties of GTA weld because the $O_2$ in the molten pool accelerated the flow of molten pool and changed the flow pattern from outward to inward direction. The impact energy and DBTT (Ductile- Brittle- Transition-Temperature) of the GTA weld shielded by Ar+$O_2$ (less 0.3%) was similar and the corrosion properties of GTA weld was slightly inferior to those of GTA weld shielded by pure Ar gas.

• Journal of Welding and Joining
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• v.12 no.1
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• pp.51-58
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• 1994

Amount of spatter, welding conditions and welding costs were investigated for MAG welding. $CO_2$, Ar+18%;$CO_2$ and Ar+8%$O_2$ were used for shielding gases. As results, arc characteristics and appropriate range for welding were obtained. Amount of spatter in Ar+18%$CO_2$ gas welding was 20% of that of $CO_2$ welding, and Ar+8%$O_2$ was 10% of that of $CO_2$ welding. Therefore by using Ar+18%$CO_2$and Ar+8%$O_2$ gases, welding costs could be reduced compared with $CO_2$ welding due to avoiding spatter.

• Journal of the Korean Society for Heat Treatment
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• v.25 no.6
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• pp.279-282
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• 2012

$SnO_2$ thin films were prepared on the Si substrate by radio frequency (RF) magnetron sputtering and then surface of the films were irradiated with intense Ar ion beam to investigate the effect of Ar ion irradiation on the properties and hydrogen gas sensitivity of the films. From atomic force microscope observation, it is supposed that intense Ar bombardments promote rough surface and increase gas sensitivity of $SnO_2$ films for hydrogen gas. The films that Ar ion beam irradiated at 6 keV show the higher sensitivity than the films were irradiated at 3 keV and 9 keV. These results suggest that the $SnO_2$ thin films irradiated with optimized Ar ion beam are promising for practical high-performance hydrogen gas sensors.