• 한국광학회:학술대회논문집
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• 한국광학회 2009년도 창립 20주년기념 특별학술발표회
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• pp.187-188
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• 2009

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2005년도 추계학술발표회 및 workshop
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• pp.170-170
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• 2005

• 한국진공학회:학술대회논문집
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• 한국진공학회 2003년도 제24회 학술발표회 초록집
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• pp.68-68
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• 2003

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2005년도 춘계학술발표회
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• pp.373-374
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• 2005

• 한국진공학회:학술대회논문집
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• 한국진공학회 2002년도 제23회 학술발표회 초록집
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• pp.177-177
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• 2002

• 한국재료학회:학술대회논문집
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• 한국재료학회 2005년도 춘계학술발표대회 및 제8회 신소재 심포지엄 논문개요집
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• pp.162-162
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• 2005

• 한국가스학회지
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• 제15권6호
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• pp.51-56
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• 2011

울산의 한 실험실에서 3년 전에 혼합가스용기(80% 아르곤 20% 산소)가 파열되었다. 그러나 파열의 원인이 명확하게 규명되지 못하였다. 이 논문은 공인 감정기관의 감정서와 경찰의 수사결과보고서를 토대로 사고시나리오를 제시하여 보았다. 폭발은 혼합가스 용기 내에서의 화학반응에 의하여 발생한 것으로 판단된다. 이는 고압산소용기의 파열사고들과 유사한 것으로 사료된다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1544-1545
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• 2011

For quantitative understanding of gas discharge phenomena, we should know electron collision cross section. Processing plasma etching of semiconductor, and research are being used in the etching source $C_4F_6$ gas may be used by itself and mixed with other gases are also used. However, the molecular gas $C_4F_6$ study on the characteristics of the electron transport and the cross-sectional area of the decision is still lacking. Therefore, we understand the electron transport characteristics and analysed the electron transport coefficients. And to understand and interpret physical properties of the ionization coefficient ${\alpha}$/N, and the attachment coefficient ${\eta}$/N in $C_4F_6$ gas.

• 한국세라믹학회지
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• 제30권7호
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• pp.578-588
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• 1993

Highly c-axis oriented ferroelectric PbTiO3 thin films were deposited on MgO single crystal substrates by RF magnetron sputtering. We have studied the effects of substrate temperature, RF input power, gas comosition, gas pressure and deposition rate on the chemical and structural characteristics of PbTiO3 thin films. The epitaxy relationship of c-axis oriented films was found to be PbTiO3{100}//MgO(100) and their microstructures were highly mosaic. It was found that the most important parameter to achieve epitaxial PbTiO3 films was the substrate temperature. The activation energy for the epitaxy formation was about 0.92eV. Lower gas pressure and RF input power were favorable for the formation of epitaxial c-axis orientation. It was also found that the optimum oxygen content in Ar gas was 10% to obtain the stoichiometric PbTiO3 composition.

• 한국전기전자재료학회논문지
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• 제18권7호
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• pp.656-661
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• 2005

The effects of gas atmosphere and in-situ thermal annealing in buffet layers on the characteristic of the ZnO grown by RF magnetron sputtering have been investigated. It was shown that the introduction of buffer layers grown at the gas atmospheres of the mixed $Ar/O_2$ and the in-situ thermal treatment of the ZnO buffer layer improved the structural and optical properties. In addition, the ZnO films on the buffer layer thermal-annealed at $N_2$ gas ambience showed the strong emission of the near band gap exciton with narrow linewidth by combining the high-temperature growth of the ZnO film.