• 마이크로전자및패키징학회지
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• 제14권3호
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• pp.15-20
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• 2007

플라스틱 기판에 적용이 가능한 최대 공정온도 $270^{\circ}C$ 이하에서 ZnO-TFT 소자를 제작하였다. ZnO-TFT 소자는 bottom gate 구조로 제작되었으며, ICP-CVD로 형성된 $SiO_2$ 산화물 게이트 공정을 제외하고는 모든 박막증착 공정은 RF-magnetron sputtering process를 이용하였다. ZnO 박막은 Ar과 $O_2$ gas 유량의 비율에 따라 여러 가지 조건에서 RF-magnetron sputtering 시스템을 이용하여 상온에서 증착하였다. Ar과 $O_2$ gas의 비율에 따라 제작된 TFT 소자는 모두 enhancement 모드의 소자특성을 나타내었고, 또한 가시광선영역에 있어 80% 이상의 높은 투과율을 보였다. ZnO 증착시 순수 Ar을 사용하여 제작된 ZnO-TFT의 경우에, $1.2\;cm^2/Vs$의 field effect mobility, 8.5 V의 threshold voltage, 그리고 $5{\times}10^5$의 높은 on/off ratio, 1.86 V/decade의 swing voltage로 가장 우수한 전기적 특성을 보였다.

• 한국진공학회지
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• 제19권3호
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• pp.177-183
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• 2010

우리는 MOCVD (metal organic chemical vapor deposition)법을 이용하여 DEZ (Diethylzinc)을 운송하는 Ar 유속과 reactant (반응물질)의 종류에 따른 ZnO 박막 증착을 연구하였다. Bubbler 시스템을 통하여 주입되는 Ar 유속에 의해 Zn 소스인 DEZ의 양이 조절된다. 산소 기체와 수증기는 산화를 위해 반응물질로 사용된다. 본 연구로부터 표면의 거칠기(surface roughness)는 반응물질의 종류와 DEZ Ar 유속에 관계되며 박막의 두께에 의존한다는 것을 알 수 있었다. 그러나 기판 온도는 산소를 반응물로 하는 상태에서는 표면 거칠기에 영향을 주지 못함을 알 수 있었다. 우리는 ZnO 박막이 90 sccm (Standard Cubic Centimeter per Minute)의 DEZ Ar 유속, 8 Pa의 수증기압, 그리고 $140^{\circ}C$의 기판 온도에서 39.16 mm의 가장 높은 거칠기를 가진다는 것을 확인할 수 있었다. 본 논문은 태양전지의 광 흡수층으로 사용가능한 ZnO 박막을 연구하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 논문집 센서 박막재료연구회 및 광주 전남지부
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• pp.22-26
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• 2008

In this paper, we developed a hybrid simulation model of carbon laser ablation under the Ar plasmas consisted of fluid and particle methods. Three kinds of carbon particles, which are carbon atom, ion and electron emitted by laser ablation, are considered in the computation. In the present simulation, we adopt capacitively coupled plasma with asymmetrical electrodes. As a result, in Ar plasmas, carbon ion motions were suppressed by a strong electric field and were captured in Ar plasmas. Therefore, a low number density of carbon ions were deposited upon substrate. In addition, the plume motions in Ar gas atmosphere was also discussed.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.381-385
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• 2005

The plasma temperature of Ar gas in hollow cathode discharge were measured. This is done by measuring the line profile of the 1s/sub 8/-2p/sub 8/ transition in Ar, using a single-frequency diode laser. Low power diode lasers have been successfully used for investigation of the line profiles of Ar transitions in hollow cathode discharges. It turns out that the plasma temperature of Ar is 640∼783 K in the discharge current range at 7∼10 mA.

• 한국재료학회지
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• 제15권10호
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• pp.621-625
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• 2005

Effects of rf power, pressure, sputtering gas composition, and substrate temperature on the deposition rate of the $WC_x$ coatings were investigated. The effects of rf power and sputtering gas composition on the hardness and corrosion resistance of the $WC_x$ coatings deposited by reactive sputtering were also investigated. X-ray diffraction (XRD) and Auger electron spectroscopy (AES) analyses were performed to determine the structures and compositions of the films, respectively. The hardnesses of the films were investigated using a nanoindenter, scanning electron microscopy, ana a salt-spray test, respectively. The deposition rate of the films was proportional to rf power and inversely proportional to the $CH_4$ content of $Ar/CH_4$ sputtering gas. The deposition rate linearly increased with increasing chamber pressure. The hardness of the $WC_x$ coatings Increased as rf power increased. The highest hardness was obtained at a $Ar/CH_4$ concentration of $10 vol.\%$ in the sputtering gas. The hardness of the $WC_x$ film deposited under optimal conditions was found to be much higher than that of the electroplated chromium film, although the corrosion resistance of the former was slightly lower than that of the latter.

• 방사성폐기물학회지
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• 제18권2호
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• pp.169-177
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• 2020

Here, the stability of stainless steel 316 (SS-316) was investigated to identify its applicability in the oxide reduction process, as a component in related equipment, to produce a complicated gas mixture composed of O₂ and Cl₂ under an argon (Ar) atmosphere. The effects of the mixed gas composition were investigated at flow rates of 30 mL/min O₂, 20 mL/min O₂ + 10 mL/min Cl₂, 10 mL/min O₂ + 20 mL/min Cl₂, and 30 mL/min Cl₂, each at 600℃, during a constant argon flow rate of 170 mL/min. It was found that the corrosion of SS-316 by the chlorine gas was suppressed by the presence of oxygen, while the reaction proceeded linearly with the reaction time regardless of gas composition. Surface observation results revealed an uneven surface with circular pits in the samples that were fed mixed gases. Thermodynamic calculations proposed the combination of Fe and Ni chlorination reactions as an explanation for this pit formation phenomenon. An exponential increase in the corrosion rate was observed with an increase in the reaction temperature in a range of 300 ~ 600℃ under a flow of 30 mL/min Cl₂ + 170 mL/min Ar.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권6호
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• pp.451-455
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• 1999

The highest etch rate of Pt film was obtained at 10% $Cl_2$/90% Ar gas mixing ratio in our previous investigation. However, the problems such as the etch residues(fence) remained on the pattern sidewall, low selectivity to oxide as mask and low etch slope were presented. In this paper, the etching by additive $O_2$ gas to 10% $Cl_2$/90% Ar gas base was examined. As a result, the fence-free pattern and higher etch slope as about 60$^{\circ}$was observed and the selectivity to oxide increased to 2.4 without decreasing of the etch rate $1500{\AA}$/min. XPS surface analysis proved that a only little $O_2$ gas removes the Pt-CI compounds as residues on the etched surface.

• 한국표면공학회지
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• 제29권2호
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• pp.93-99
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• 1996

In this work BN thin films were deposited on Si substrate by R. F. sputtering method at $200^{\circ}C$ and in Ar + $N_2$ mixed gas atmosphere. In order to investigate the effect of ion bombardment on substrate for c-BN bonding, substrate bias voltage was applied. The optimum substrate bias voltage for c-BN bonding was determined by FTIR analysis on specimens which were deposited with various bias voltages. Then BN thin film was deposited with this optimum condition and its phase, morphology, chemical composition, and refractive index were compared with those of BN film which was deposited without bias voltage. FTIR results showed that BN films deposited with substrate bias voltage were composed of mixed phases of c-BN and h-BN, while those deposited without bias voltage were h-BN only. When pure Ar gas was used for sputtering gas, BN films were delaminated easily from substrate in air, while when 10% $N_2$ gas was added to the sputtering gas, although c-BN specific infrared peak was reduced, delamination did not occur. GXRD and TEM results showed that BN films were amorphous phases regardless of substrate bias voltage, and AES results showed that the chemical compositions of B/N were about 1.7~1.8. The refractive index of BN film deposited with bias voltage was higher than that without bias voltage. The reason is believed to be the existence of c-BN bonding in BN film and the higher density of film that deposited with the substrate bias voltage.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.233-233
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• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is a prominent candidate among prospective semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. The etching of MTJ stack with good properties is one of a key process for the realization of high density MRAM. In order to achieve high quality MTJ stack, the use of CoFeB and IrMn magnetic films as free layers was proposed. In this study, inductively coupled plasma reactive ion etching of CoFeB and IrMn thin films masked with Ti hard mask was investigated in a $Cl_2$/Ar gas mix. The etch rate of CoFeB and IrMn films were examined on varying $Cl_2$ gas concentration. As the $Cl_2$ gas increased, the etch rate monotonously decreased. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of CoFeB and IrMn thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of CoFeB and IrMn displayed better etch profiles. Finally, the clean and vertical etch sidewall of CoFeB and IrMn free layers can be achieved by means of thin Ti hard mask in a $Cl_2$/Ar plasma at the optimized condition.

• 대한지하수환경학회지
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• 제1권1호
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• pp.6-9
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• 1994

지하수의 Ar/$N_2$가스의 비율은 탈질화(denitrification)의 정도를 측정하는 하나의 방법으로 사용된다. (Barnes et al., 1975; Vogel et al., 1981; Mariotti et al., 1988) 그 비율 측정은 일반적으로 질량분석기 (Mass Spectrometer)를 사용한다. 본 실험에서 사용한 Mass Spectrometer는 일반적인 Static Mass Spectrometer가 아닌 Ar과 $N_2$을 시간적으로 동시에 측정하여 오차를 줄일 수 있는 VG Optima isotope ratio Mass Spectrometer를 사용하였다. 두 지역 지하수의 Ar/$N_2$가스의 비율을 측정한 결과 Site 1(Grand Island, NE)의 경우 대기가스가 포화된 증류수의 Ar/$N_2$가스 비율인 0.026보다 낮은 0.015-0.018로서 탈질이 일어났음을 알 수 있으며, Site 2(Shelton, NE)의 경우 0.023-0.02로서 탈질이 일어나지 않음을 알 수 있다. 본 실험의 목적은 지하수에 응해되어 있는 Ar/Nitrogen의 비율을 정확히 측정하는 방법을 개발하므로서 탈질의 정도를 정확히 측정하며 탈질의 전개 과정을 관찰하기 위한 것이다.