• Journal of Korean Vacuum Science & Technology
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• 제1권1호
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• pp.24-29
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• 1997

Surface morphologies and fundamental characteristics of molybdenum nitride films deposited by reactive dc magnetron sputtering were studied for application to Cu diffusion barrier. A phase transformation from Mo to $\gamma$-Mo$_2$N phase at 0.5$N_2$ flow ratio.($N_2$/(Ar+$N_2$)) equal to and larger than 0.2, whereas a second phase transformation to $\gamma$-MoN phase at 0.5 N2 flow ratio, With the variation of the N2 ratio the surface morphologies of the films were generally smooth except the cases of 0.2 and 0.3$N_2$ gas rations, where build-up of film stresses occurred. $\gamma$-Mo$_2$N film was found to crystallize at the deposition temperature of 40$0^{\circ}C$. The surfaces of $\gamma$-Mo$_2$N films deposited up to 40$0^{\circ}C$ were smooth, but the film deposited at 50$0^{\circ}C$ had very rough surface morphology. It seems that this was due to the building-up of thermal stresses at the high deposition temperature, which might lead to hillock formation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.132-132
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• 2010

In the nano-scale Si processing, patterning processes based on multilevel resist structures becoming more critical due to continuously decreasing resist thickness and feature size. In particular, highly selective etching of the first dielectric layer with resist patterns are great importance. In this work, process window for the infinitely high etch selectivity of silicon oxynitride (SiON) layers and silicon nitride (Si3N4) with EUV resist was investigated during etching of SiON/EUV resist and Si3N4/EUV resist in a CH2F2/N2/Ar dual-frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters, such as the CH2F2 and N2 flow ratio and low-frequency source power (PLF). It was found that the CH2F2/N2 flow ratio was found to play a critical role in determining the process window for ultra high etch selectivity, due to the differences in change of the degree of polymerization on SiON, Si3N4, and EUV resist. Control of N2 flow ratio gave the possibility of obtaining the ultra high etch selectivity by keeping the steady-state hydrofluorocarbon layer thickness thin on the SiON and Si3N4 surface due to effective formation of HCN etch by-products and, in turn, in continuous SiON and Si3N4 etching, while the hydrofluorocarbon layer is deposited on the EUV resist surface.

• 열처리공학회지
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• 제10권2호
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• pp.138-149
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• 1997

TiN and AlN are ceramic materials with extensive applications due to its excellent mechanical and chemical properties at elevated temperature. The purpose of this research is to develop the method for the synthesis of ternary nitride powder, titanium-aluminum-nitrogen system, which have an excellent property of both TiN and AlN. The ternary nitride such as $Ti_3AlN$, $Ti_2AlN$ and $Ti_3Al_2N_2$ can be synthesized by the interdiffusion nitriding method in Ar gas, however, the ternary nitride coexist with TiN, AlN, $Ti_3Al$ and ${\alpha}$-Ti. The ternary nitride are stable below $1400^{\circ}C$, but these are gradually decomposed into TiN, $Ti_3Al$ and AlN above $1400^{\circ}C$. The thermal oxidation characteristics of the Ti-Al-N compound synthesized by the interdiffusion nitriding method is superior to that of the TiN+AlN mixed powder, and the oxidation for both materials show the differential behaviors.

• 한국재료학회지
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• 제23권12호
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• pp.737-744
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• 2013

We demonstrated size control of Au nanoparticles by heat treatment and their use as a catalyst for single-walled carbon nanotube (SWNTs) growth with narrow size distribution. We used uniformly sized Au nanoparticles from commercial Au colloid, and intentionally decreased their size through heat treatment at 800 oC under atmospheric Ar ambient. ST-cut quartz wafers were used as growth substrates to achieve parallel alignment of the SWNTs and to investigate the size relationship between Au nanoparticles and SWNTs. After the SWNTs were grown via chemical vapor deposition using methane gas, it was found that a high degree of horizontal alignment can be obtained when the particle density is low enough to produce individual SWNTs. The diameter of the Au nanoparticles gradually decreased from 3.8 to 2.9 nm, and the mean diameter of the SWNTs also changed from 1.6 to 1.2 nm for without and 60 min heat treatment, respectively. Raman results reconfirmed that the prolonged heat treatment of nanoparticles yields thinner tubes with narrower size distribution. This work demonstrated that heat treatment can be a straightforward and reliable method to control the size of catalytic nanoparticles and SWNT diameter.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2003년도 학술대회지
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• pp.360-367
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• 2003

Diamond-like carbon(DLC) films are considerable research interest because of their widespread applications as protective coatings in areas such as optical windows, magnetic storage disks, car parts, biomedical coatings and as micro-electromechanical devices(MEMs). DLC films were deposited on WC-Co by PECVD using Ar, $C_2H_4$ gas. Tribological tests were conducted using a ball-on-disk type tribometer in dry air. Three kinds of counter-bodies balls were used. The counter-bodies balls are SM45C, SUJ2 and $ZrO_2$(3.17mm in diameter). Wear rate of the samples were calculated after measuring the worn-out volume of the wear track. As results wear test, the higher hardness of counter-bodies, friction coefficient low. As result of XPS estimation, wear debris generated as an oxide lower the friction coefficient.

• Journal of Welding and Joining
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• 제17권3호
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• pp.36-43
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• 1999

The effect of Si content in welding wires on spattering characteristics and droplet transfer phenomena was studied. In MAG welding using 80% Ar-20% $CO_2$ shielding gas, spattering characteristics and droplet transfer phenomena were varied with Si content of wire. With increasing Si content, the spattering ratio and the ratio of large size spatter $(d\geq1.0mm)$ were increased. The increase of Si content in molten metal made surface tension increase due to reduction of oxygen content, which resulted from deoxidizing action of silicon. The increase of surface tension resulted in unstable transfer phenomena and arc instability in both short circuit and spray region. With changing Si content of wire, spattering characteristics and droplet transfer phenomena was directly influenced by the variation of surface tension, compared with the effect of arc stability.

• Journal of Korean Vacuum Science & Technology
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• 제5권2호
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• pp.47-51
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• 2001

To obtain high remnant polarization and good crystalinity of ferroelectric thin films in non-volatile memory devices, the high temperature treatment in oxygen ambient is inevitable. Severe problems that occur in this process are oxygen diffusion into substrate, oxidation of electrode and buffer layer, degradation of microstructure and so on. We made ruthenium dioxide thin film by reactive sputtering with oxygen and argon mixture atmosphere. Comparing quantitatively the core-level spectra of Ru and RuO$_2$ obtained by x-ray photoelectron spectroscopy(XPS), we found that chemical state of RuO$_2$ is very stable and of good resistance to oxygen diffusion and oxidation of adjacent layers. It opens the use of RuO$_2$ thin film as a multifunctional layer of good conducting electrode and resistive barrier for the diffusion and the oxidation. We also suggest a correct understanding of Ru 3d core-level spectrum for RuO$_2$ based on the scheme of final state screening and charge transfer satellites.

• 한국진공학회지
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• 제11권2호
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• pp.97-102
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• 2002

유기금속화학기상증착방법 (metal-organic chemical vapor deposition : MOCVD)을 이용하여 실리콘 (100) 기판위엔 ZnO막을 증착하였다. 공정온도 ($250^{\circ}C$~$400^{\circ}C$)와 Ar과 $O_2$가스의 유량 비 변화에 따른 ZnO막의 특성변화를 조사하였다. 막의 결정성은 공정온도가 증가함에 따라 향상되었으며 $400^{\circ}C$에서 $0.4^{\circ}$의 반치폭(full width at half maximum : FWHM)을 얻었다. 공정온도 변화에 따른 표면 평활도(surface smoothness)변화는 결정성과 반대의 경향성을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.482-482
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• 2012

대기압 플라즈마 소스는 미생물을 살균하는 효과를 가지고 있으나 그 메커니즘에 대해서는 여전히 많은 연구가 필요한 실정이다. 우리는 본 연구에서 메커니즘 규명을 위한 시작단계로 플라즈마에 대한 미생물의 반응을 생물학적 및 물리적 분석을 통해 보고자 하였다. 연구에 사용한 미생물은 yeast인 Saccharomyces cerevisiae 이며 Ar Gas 플라즈마를 사용하였다. Yeast에 일정한 시간 동안 플라즈마를 조사한 후 세포의 생존, 모양 변화 관찰 및 DNA에 대한 영향이 분석되었고 r-FIB 장비를 이용하여 세포표면의 이차전자 방출계수를 측정하였다. 플라즈마 조사 시간에 따라 Yeast active cell의 수가 감소하며, water에 넣고 조사할때에는 YPD media에 넣고 조사한 것에 비해 급격히 감소함을 볼 수 있다. 셀의 모양 관찰 결과도 water에 넣고 조사할 때, YPD media보다 더 찌그러듬을 볼 수 있다. 플라즈마 조사량에 따라서 Water의 PH 값은 YPD에 비해 급격히 낮아짐을 보인다. pH의 값을 달리하고 SNP와 H2O2가 첨가된 water에 Yeast를 배양시킬 때, pH의 값이 낮아질수록 yeast의 생존도 감소함을 볼 수 있다. 그리고 DNA gel electrophoresis를 통해 플라즈마 처리를 하게되면 Yeast의 DNA 양이 감소하는 것을 관찰할 수 있다. 또한 플라즈마 처리를 3분 하였을 때의 Yeast 세포막으로부터 방출되는 이차전자방출계수는 다른 처리시간에 대한 값에 비하여 확연히 증가하는 것을 볼 수 있다. 이들 사실로부터 플라즈마의 효과로 인해 외부의 전자를 흡수 및 차단할 수 있는 기능을 갖고 있는 Yeast 세포막의 구조가 변형되어 손상되었음을 의미한다.

• Current Photovoltaic Research
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• 제3권3호
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• pp.97-100
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• 2015

The kesterite $Cu_2ZnSnSe_4$ (CZTSe) thin film solar cells were synthesized by selenization of sputtered Cu/Sn/Zn metallic precursors on Mo coated soda lime glass substrate in Ar atmosphere. Cu/Sn/Zn metallic precursors were deposited by DC magnetron sputtering process with 30 W power at room temperature. As-deposited metallic precursors were placed in a graphite box with Se pellets and selenized using rapid thermal processing furnace at various temperature ($480^{\circ}C{\sim}560^{\circ}C$) without using a toxic $H_2Se$ gas. Effects of Selenization temperature on the morphological, crystallinity, electrical properties and cell efficiency were investigated by field emission scanning electron microscope (FE-SEM) and X-ray diffraction (XRD), J-V measurement system and solar simulator. Further details about effects of selenization temperature on CZTSe thin films will be discussed.