• Journal of Korean Vacuum Science & Technology
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• v.4 no.4
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• pp.97-101
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• 2000

In this study, two kinds of barium strontium titanate (BST) samples were prepared. One is a conventional BST film that is sputtered in a mixture of argon and oxygen. The other is a nitrogen-incorporated BST film that is sputtered in a mixture of oxygen and intentionally added nitrogen instead of argon gas. The structural properties of both of the BST films had not changed significantly with the species of sputtering gas. However, the leakage current of BST films sputtered at ($N_2$+O$_2$) atmosphere was lower than those sputtered at (Ar +O$_2$) atmosphere: 1.9$\times$10$^{-8}$ A/cm$^2$ at 2V for the films prepared at (Ar +O$_2$) atmosphere and 8.6$\times$10$^{-9}$ A/cm$^2$ for the films at ($N_2$+O$_2$) atmosphere. From an XPS analysis, it has been found that nitrogen atoms are incorporated in BST films with a concentration of 1.92 at% and form a certain oxynitride phase. It is proposed that nitrogen atoms are able to fill the oxygen vacancies of BST films during sputtering process, and then the leakage current reduces due to a decrease in the vacancies. The BST films sputtered at ($N_2$+O$_2$) atmosphere have superior electrical properties to the films sputtered at (Ar +O$_2$), without any significant structural changes.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.61-66
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• 2010

Cu-Cu thermo-compression bonding process was successfully developed as functions of the deposited Cu thickness and $Ar+H_2$ forming gas annealing conditions before and after bonding step in order to find the low temperature bonding conditions of 3-D integrated technology where the interfacial toughness was measured by 4-point bending test. Pre-annealing with $Ar+H_2$ gas at $300^{\circ}C$ is effective to achieve enough interfacial adhesion energy irrespective of Cu film thickness. Successful Cu-Cu bonding process achieved in this study results in delamination at $Ta/SiO_2$ interface rather than Cu/Cu interface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.203-206
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• 2004

For the realization of PRAM, $Ge_2Sb_2Te_5$ (GST) has been employed for the phase transition between the crystal and amorphous states by electrical joule heating. Although there has been a vast amount of results concerning the GST in material aspect for the laser-induced optical storage disc applications, the process-related issues of GST for the PRAM applications have not been reported. In this work, the etching behaviors of GST were investigated when the processing conditions were varied in the high-density helicon plasma. The etching parameters of RF main power, RF bias power, and chamber pressure were fixed at 600 W, 150 W, and 5 mTorr, respectively. For the etching processes, gas mixtures of $Ar/Cl_2$, $Ar/CF_4$, and $Ar/CHF_3$ were employed, in which the etching rates and etching selectivities of GST thin film in given gas mixtures were evaluated. From obtained results, it is found that we can arbitrarily design the etching process according to given cell structures and material combinations for PRAM cell fabrications.

• Korean Journal of Materials Research
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• v.13 no.9
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• pp.587-592
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• 2003

The thin films of 316L stainless steel were made on glass and S45C substrate by Ion beam assisted deposition with reactive atmosphere of argon and nitrogen. The films were deposited at the various conditions of ion beam power and the ratios of Ar/$N_2$gas. Properties of these films were analyzed by glancing x-ray diffraction method(GXRD), AES, potentiodynamic test, and salt spray test. The results of GXRD showed that austenite phase could be appeared by $N_2$ion beam treatment and the amount of austenite phase increased with the amount of nitrogen gas. The films without plasma ion source treatment had the weak diffraction peak of ferrite phase. But under the Ar plasma ion beam treatment, the strong diffraction peaks of ferrite phase were appeared and the grain size was increased from 12 to 16 nm. Potentiodynamic polarization test and salt spray test indicated that the corrosion properties of the STS 316L films with nitrogen ion source treatment were better than bulk STS 316L steel and STS 316L films with Ar ion source treatment.

• Korean Journal of Crystallography
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• v.7 no.2
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• pp.175-182
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• 1996

ZnO thin films were deposited on Corning 7059 glass substrates to study fundamental properties of films. According to the experimental results, (002) preferred ZnO thin films were grown by purging Ar/O2 mixed gas, but not without oxygen gas. The structure and the orientation of ZnO thin films were much affected by the substrate temperature and rf power. High quality ZnO films were obtained by increasing their values. Optimum deposition parameters were : 300W rf power, 300℃ substrate temperature, Ar/O2=70/30. To characterize SAW propagation properties, IDT was fabricated by etching Al films deposited on diamond/Si wafer with RIE. Measured λ(wavelength) was 24μm and experimental results were well matched with simulation. Center frequency was 250MHz, and the calculated phase velocity of ZnO/ diamond structure was about 6000m/s.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.481-486
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• 2008

The different degrees of blackening were observed at the inner surface of borosilicate, soda-lime, and aluminosilicate glass tubes having different sodium (Na) contents. The sodium contents ($Na_2O$) within the borosilicate, soda-lime, and aluminosilicate glass tubes were found to be 4%, 14%, and 0.06%, respectively. The degree of blackening was shown to increase as the sodium content within the glass of the fluorescent lamp containing Ne+Ar+Hg gas mixture. Higher degree of blackening was observed from the inner surface of the glass tube coated with $Y_2O_3$. The blackening was found to be originated from the amalgam of $NaHg_2$ generated by the chemical reaction between the mercury ions within the discharge gas and sodium within the glass tube during operation.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.396-401
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• 1999

In this study, $Ar^+$ ion laser etching process of single/poly-crystalline Si with $CCl_2F_2$ gas is investigated for MEMS applications. In general, laser direct etching process is useful in microelectronic process, fabrication of micro sensors and actuators, rapid prototyping, and complementary processing because of the advantages of 3D micromachining, local etching/deposition process, and maskless process with high resolution. In this study, a pyrolytic method, in which $CCl_2F_2$ gasetches molten Si by the focused laser, was used. In order to analyze the temperature profile of Si by the focused laser, the 3D heat conduction equation was analytically solved. In order to investigate the process parameters dependence of etching characteristics, laser power, $CCl_2F_2$ gas pressure, and scanning speed were varied and the experimental results were observed by SEM. The aspect ratio was measured in multiple scanning and the simple 3D structure was fabricated. In addition, the etching characteristics of $6\mum$ thick poly-crystalline Si on the insulator was investigated to obtain flat bottom and vertical side wall for MEMS applications.

• Resources Recycling
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• v.9 no.4
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• pp.3-15
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• 2000

Reduction of Electric Arc Furnace dust with carbon (graphite) was studied at the temperature range of $800^{\circ}C$ to $1100^{\circ}C$ in Ar gas atmosphere. The briquetted dust with graphite powder was heated in a vertical tube furnace for given reaction time and Quenched in Ar gas atmosphere. It was found that initially the reduction of Zn was chemically controlled and the activation energy was about 120 KJ/mole. Because the almost all of Pb was removed with Cl in the form of $PbCl_2$, it is considered that Pb is removed by chloride reduction. Cu was vaporized as a chloride up to 30% of its original content, but the remaining of Cu would be accumulated with the reduced iron. and also, Cd was removed completely within 15 min. at $1000^{\circ}C$.

• Proceedings of the KWS Conference
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• 2010.05a
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• pp.66-66
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• 2010

국내 화력발전의 $CO_2$배출량을 크게 줄이고, 친환경, 그린 화력발전시스템을 위한 가장 효과적인 수단은 발전효율을 획기적으로 증대시키는 것이기 때문에 이를 목표로 한 기술개발은 경제적으로나 산업적으로 파급효과가 매우 크다. 발전효율 증대를 위한 핵심기술은 증기터빈의 성능향상이다. 현재 일본, 미국, EU 등 각국이 가장 관심을 가지고 기술개발에 심혈을 쏟고 있는 초내열, 내식 합금소재는 $700^{\circ}C$이상에서 기계적 성능을 보장할 수 있는 Ni기 합금개발이고, 현재까지 상당한 기술수준에 이르고 있는 것으로 파악되고 있다. 국내의 경우는 관련기술개발을 위해 연구가 진행되고 있으나, 기술적으로 아직 미흡한 수준이다. Ni기 초내열, 내식합금을 개발해서 그것을 화력발전용 증기터빈 부품, 특히 초내열합금 용접형 터빈로터 소재로 이용하기 위해서는 체계적이고 실용적인 연구를 통하여 용접형로타의 내구성과 신뢰성이 보장되는 최적 수준의 접합기술 개발이 선행되어야 한다. 따라서 본 연구는 선행연구로 $700^{\circ}C$이상 초내열/내식 Ni기 합금소재의 용접기술 개발을 위한 후보 소재 Alloy 617의 동종재료 용접 기술 개발을 목표로 한다. 본 연구는 Alloy617 12.6t 맞대기 이음으로 U그루브 내로갭 TIG용접을 하였다. 1pass 1layer 방식으로 총 8pass 8layer로 용접하였다. 전류 및 용접속도는 동일하게 두고 실드가스를 Ar 또는 Ar-$H_2$ 가스로 변경하여 시험하였다. Ar가스 TIG용접은 비드표면에 산화스케일이 생기고, 비드면이 거칠며 전체적으로 산화되었다. 반면에 Ar-$H_2$가스 TIG용접은 비드표면에 산화스케일이 없으며 표면이 미려하고 산화되지 않았다. 실드가스에 수소가스 첨가시 환원성가스로 역할을 하게 되고 이에 따라 용융지 표면에 산화피막을 제거하여 용접비드를 청정하게 하는 효과를 가진다.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.176-182
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• 2002

Amorphous $TiO_2$ thin films were deposited on glass substrates by ion beam sputtering in which the ratio of $O_2$/Ar gas used as discharged gas was varied from 0 to 2. After optical and microstructure properties and chemical composition of thin films was analyzed, antireflection coating layers were fabricated with $SiO_2$/$TiO_2$ multi-layers. Thin films deposition was performed at room temperature and ion beam voltage and ion current density for sputtering of target were fixed at 1.2 kV and 200 $\mu\textrm{A}/\textrm{cm}^2$, respectively. Refractive indexs of the deposited $TiO_2$films were 2.40-2.45 at a wavelength of 633 nm. $TiO_2$films had high transmission and stoichiometry when ratio of $O_2$/Ar was 1. Rms roughness of deposited $TiO_2$ film was below 7 $\AA$. In excessive $O_2$ environments, however Rms roughness increased over 50 $\AA$. Transmittance decreased by scattering of rough surface. Reflectance of $SiO_2$/$TiO_2$multi-layers was below 1% in visible light.