• Proceedings of the Optical Society of Korea Conference
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• 2009.10a
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• pp.187-188
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• 2009

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2005.11a
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• pp.170-170
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• 2005

• Proceedings of the Korean Vacuum Society Conference
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• 2003.02a
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• pp.68-68
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• 2003

• Proceedings of the Korean Nuclear Society Conference
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• 2005.05a
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• pp.373-374
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• 2005

• Proceedings of the Korean Vacuum Society Conference
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• 2002.06a
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• pp.177-177
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.162-162
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• 2005

• Journal of the Korean Institute of Gas
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• v.15 no.6
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• pp.51-56
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• 2011

Mixed gas cylinder(80% Ar, 20% $O_2$) exploded three years ago. But the cause of cylinder rupture was not identified and the case was finished. This paper is the discussions on the cause of cylinder explosion with the investigation report by the police and the similar accident cases. The cause of explosion is the chemical reaction in the cylinder. This accident is similar with the explosion of pressurized oxygen cylinder.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1544-1545
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• 2011

For quantitative understanding of gas discharge phenomena, we should know electron collision cross section. Processing plasma etching of semiconductor, and research are being used in the etching source $C_4F_6$ gas may be used by itself and mixed with other gases are also used. However, the molecular gas $C_4F_6$ study on the characteristics of the electron transport and the cross-sectional area of the decision is still lacking. Therefore, we understand the electron transport characteristics and analysed the electron transport coefficients. And to understand and interpret physical properties of the ionization coefficient ${\alpha}$/N, and the attachment coefficient ${\eta}$/N in $C_4F_6$ gas.

• Journal of the Korean Ceramic Society
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• v.30 no.7
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• pp.578-588
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• 1993

Highly c-axis oriented ferroelectric PbTiO3 thin films were deposited on MgO single crystal substrates by RF magnetron sputtering. We have studied the effects of substrate temperature, RF input power, gas comosition, gas pressure and deposition rate on the chemical and structural characteristics of PbTiO3 thin films. The epitaxy relationship of c-axis oriented films was found to be PbTiO3{100}//MgO(100) and their microstructures were highly mosaic. It was found that the most important parameter to achieve epitaxial PbTiO3 films was the substrate temperature. The activation energy for the epitaxy formation was about 0.92eV. Lower gas pressure and RF input power were favorable for the formation of epitaxial c-axis orientation. It was also found that the optimum oxygen content in Ar gas was 10% to obtain the stoichiometric PbTiO3 composition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.656-661
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• 2005

The effects of gas atmosphere and in-situ thermal annealing in buffet layers on the characteristic of the ZnO grown by RF magnetron sputtering have been investigated. It was shown that the introduction of buffer layers grown at the gas atmospheres of the mixed $Ar/O_2$ and the in-situ thermal treatment of the ZnO buffer layer improved the structural and optical properties. In addition, the ZnO films on the buffer layer thermal-annealed at $N_2$ gas ambience showed the strong emission of the near band gap exciton with narrow linewidth by combining the high-temperature growth of the ZnO film.