• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1252-1257
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• 2004

This paper describes the information for quantitative simulation of weakly ionized plasma. In previous paper, we calculated the electron transport coefficients by using two-term approximation of Boltzmann equation. But there is difference between the result of the two-term approximation of the Boltzmann equation and experiments in pure CF$_4$ molecular gas and in CF$_4$+Ar gas mixture. Therefore, In this paper, we calculated the electron drift velocity (W) in pure CF$_4$ molecular gas and CF$_4$+Ar gas mixture (1 %, 5 %, 10 %) for range of E/N values from 0.17～300 Td at the temperature was 300 K and pressure was 1 Torr by multi-term approximation of the Boltzmann equation by Robson and Ness. The results of two-term and multi-term approximation of the Boltzmann equation have been compared with each other for a range of E/N.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.213-213
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• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is one of the best semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. For the realization of high density MRAM, the etching of MTJ stack with good properties is one of a key process. Recently, there has been great interest in the MTJ stack using MgO as barrier layer for its huge room temperature MR ratio. The use of MgO barrier layer will undoubtedly accelerate the development of MTJ stack for MRAM. In this study, high-density plasma reactive ion etching of MgO films was investigated in an inductively coupled plasma of $Cl_2$/Ar gas mixes. The etch rate, etch selectivity and etch profile of this magnetic film were examined on vary gas concentration. As the $Cl_2$ gas concentration increased, the etch rate of MgO monotonously decreased and etch slop was slanted. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of MgO thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of MgO displayed better etch profiles. Finally, the clean and vertical etch sidewall of MgO films was achieved using $Cl_2$/Ar plasma at the optimized etch conditions.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2003.11a
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• pp.90-95
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• 2003

Chemical management of annulus gas system is carried out for the purpose of ensuring the safety and reliability of the system via securing the integrity of the system, detecting the D$_2$O in-leakage of coolant and/or moderator, and reducing the radiation dose. Since the quality of CO_2$ gas, which is used as a filling gas for annulus gas system at CANDU plants, has a propound effect on the integrity of the system material and the radiation dose, CO_2$ gas of high quality is needed. If the quality of CO_2$ gas does not meet the specification, it may give rise to undesirable effect not only on the annulus gas system, but also on the environment due to the production of radioactive nuclei. Therefore, it is very important to check the impurities of CO_2$ gas. Based on this background, the inventories of C-14 and Ar-41 in CO_2$ gas that is supplied as annulus gas were estimated using the data on concentrations of the impurities of $CO_2$ such as C, N_2$ and Ar. The results of this study is expect to give useful information on optimization of CO_2$ impurities maintenance and management of gaseous radioactive wastes produced at CANDU plants.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.286-291
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• 1998

$SrTiO_3$[ST] thin films were fabricated on $RuO_2$bottom electrodes by RF magnetron sputtering with various $Ar/O_2$ratio in sputtering gas. As the content of oxygen increases, the leakage current of ST films measured at $10^5$ V/cm decreases from $2.0{\times}10^{-6}A/{\textrm}{cm}^2(Ar/O_2=10/0)$ to $3.8{\times}10^{-7}A/{\textrm}cm^2(Ar/O_2=5/5)$, and the dielectric constant of ST films increases from $70(Ar/O_2=10/0)$ to $190(Ar/O_2=5/5)$. The improvement of electrical properties of ST films is mainly due to the structural modification of ST films such as better crystallinity, smooth surface morphology with the increase of oxygen content in the sputtering gas.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.75-81
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• 2018

The effect of $Ar-N_2$ plasma treatment on Cu surface as one of solutions to realize reliable Cu-Cu wafer bonding was investigated. Structural characteristic of $Ar-N_2$ plasma treated Cu surface were analyzed using X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscope. Ar gas was used for a plasma ignition and to activate Cu surface by ion bombardment, and $N_2$ gas was used to protect the Cu surface from contamination such as -O or -OH by forming a passivation layer. The Cu specimen under high Ar partial pressure plasma treatment showed more copper oxide due to the activation on Cu surface, while Cu surface after high $N_2$ gas partial pressure plasma treatment showed less copper oxide due to the formation of Cu-N or Cu-O-N passivation layer. It was confirmed that nitrogen plasma can prohibit Cu-O formation on Cu surface, but nitrogen partial pressure in the $Ar-N_2$ plasma should be optimized for the formation of nitrogen passivation layer on the entire surface of Cu wafer.

• Journal of the Korean Institute of Gas
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• v.15 no.6
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• pp.1-7
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• 2011

The Measurement of risk parameter in city-gas equipments have been measured and confirmed by human, and evolved into remote monitoring system using wireless communication. Furthermore, domestic and international industry increase the efficiency of management, which can develop remote monitoring and control system using wireless communication. However, Those wireless system might be decrease the efficiency and ease because of connecting PDA and lap-top using wire-cable when data have checked immediately from outside. This paper is able to improve efficiency of safety management on city-gas equipments by developing mobile city-gas safety management system on AR.

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.209-211
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• 2005

Super duplex stainless steels have been used for offshore oil and gas piping systems which are subject to corrosion atmosphere, because they have excellent resistance to Stress Corrosion Cracking (SCC) and Pitting corrosion and high strength/weight ratio. Normally, the welding for duplex stainless steels has been peformed using GTAW with Ar shielding gas. However, in case of using Ar as shielding gas, the corrosion resistance at root weld metal will be deteriorated due to loss of nitrogen from weld deposit during welding. It is wellknown that the corrosion resistance of super duplex stainless can be restored by addition of nitrogen as shielding gas. In this study, we made super duplex welding with using several kinds of shielding and purging gases and investigated the relationship between shielding gas and corrosion resistance. Consequently, it was shown that corrosion resistance of weld deposit can be restored by addition of $N_{2}$ as shielding gas.

• Proceedings of the KIEE Conference
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• 2006.10b
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• pp.163-166
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• 2006

Energy distribution function for electrons in $SF_6$-Ar mixtures gas used by MCS-BEq algorithm has been analysed over the E/N range 30${\sim}$300(Td) by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2(%) and 0.5(%) $SF_6$-Ar mixtures were measured by time-of-flight(TOF) method, The results show that the deduced longitudinal diffusion coefficients and transverse diffusion coefficients agree reasonably well with theoretical for a rang of E/N values The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.52-55
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• 2000

In this study, (Ba,Sr)$TiO_3$(BST) thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP) as a function Ar/$CF_4$ gas mixing ratio. Experiment was done by varying the etching parameters such as rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 1700 ${\AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X -ray photoelectron spectroscopy(XPS) studies shows that there are surface reaction between Ba, Sr, Ti and C, F radicals during the etching. To analyze the composition of surface residue remaining after the etching, films etched with different $CF_4$/Ar gas mixing ratio were investigated using XPS.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.64 no.3
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• pp.125-129
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• 2015

Energy distribution function for electrons in SF6-Ar mixtures gas used by MCS-BEq algorithm has been analysed over the E/N range 30~300[Td] by a two term Boltzmann equation and a Monte Carlo Simulation using a set of electron cross sections determined by other authors experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6-Ar$ mixtures were measured by time-of-flight(TOF) method, The results show that the deduced longitudinal diffusion coefficients and transverse diffusion coefficients agree reasonably well with theoretical for a rang of E/N values. The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.