• Proceedings of the KWS Conference
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• 2009.11a
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• pp.7-7
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• 2009

TIG 용접에서는 후판 용접의 경우 용입의 한계 때문에 깊고 넓은 그루브 가공을 하여 다층 용접을 한다. 이 때, 그루브를 채우는 용착금속에 의한 응고 수축과 과대한 입열로 인한 변형이 문제시 되고 있다. 변형을 줄이기 위해서는 용착금속의 양과 입열량을 줄여야 한다. 이러한 문제를 해결하기 위해 그루브의 루트패이스를 두껍게 하고 그루브각을 줄여서 용착량을 줄인다. 이때, 좁은 그루브에서 두꺼운 루트패이스를 완전 용입할 수 있는 용접 프로세스가 필요하다. 비드가 좁고 깊은 용입 특성을 가지는 Plasma welding(PAW) 경우에는 좁은 그루브 속에 토치가 접근하기 어려워 적용하기 어렵다. 따라서 접근성이 용이한 TIG 용접에서 높은 용입형상비를 가지는 용접공정 개발이 필요하다. 선행연구로 높은 용입 형상비를 가지는 Active flux Tungsten Inert Gas(ATIG) 용접이 연구되었다. ATIG의 용입 증가 메커니즘으로는 Marangoni effect, 음이온들로 인한 아크 수축 효과, 절연 플럭스에 의한 아크 수축효과 등으로 알려져 있다. 또한 선행연구에서 ATIG에서 Ar가스에 He 또는 $H_2$ 가스를 첨가하면 용입이 더욱 증가하는 것을 확인하였다. 본 연구에서는 A-TIG에 He 가스를 적용하고 아크길이 0.5mm, 1.0mm, 2.0mm와 전극 선단각 30도, 60도, 90도에 따른 용입 형상비와 변형량을 검토하기 위해 실험을 하였다. 실험 결과는 아크길이가 감소할수록 전극 선단각이 증가할수록 용입 형상비는 증가하였고, 변형량은 감소하였다.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.382-382
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• 2009

염료감응형 태양전지의 구성체 중 전극으로 연구 되어 지고 있는 $TiO_2$는 기존에 대량 생산이 가능한 spin coating법, screen printing법, spray법의 연구가 이루어져 왔으나 고 효율 태양전지에 쓰이는 전극 시스템에 비해 고 분산성을 지닌 $TiO_2$페이스트를 제조 하는데 어려움이 있다. 그리고 플렉시블 디스플레이 소자의 응용을 위해서는 소자 공정 온도인 $250^{\circ}C$ 이하의 공정 온도가 요구 되어 지므로 고온공정인 CVD법은 이에 적합하지 않다. 이에 본 연구는 진공 증착 방법인 광원자층증착법을 이용하여 $150^{\circ}C$이하의 저온공정온도에서도 적용이 가능한 $TiO_2$ 박막을 185nm의 UV light를 조사하여 glass 기판위에 제조 하고 그에 따른 박막의 물성 분석을 하였다. Mo source로는 titanium tetraisopropoxide(TTIP)와 reactant gas 로는 $H_2O$를 사용하였으며 불활성 기체인 Ar 가스는 purge 가스로 각각 사용하였다. $100^{\circ}C{\sim}250^{\circ}C$ 공정온도를 변수로 $TiO_2$ 박막을 제조 하였으며 제조된 $TiO_2$ 박막의 물성 분석을 위해 FESEM, TEM을 이용하여 표면 및 두께를 분석하였다. 또한 $100^{\circ}C$ 400 cycles에서 약 12nm 막 두께를 관찰 할 수 있었으며 그 결과 박막의 성장률이 $0.3{\AA}$/cycle 임을 확인 할 수 있었다. 그리고 UV-VIS을 이용하여 박막의 좌외선에 대한 흡수도 및 투과도 분석을 하였다. 또한 XPS 성분 분석을 통하여 $100^{\circ}C$의 저온 공정에서 형성된 박막이 $TiO_2$임을 확인 하였다. 이러한 결과에서 185nm의 UV light에 의한 광원자층 증착법으로 $100^{\circ}C$의 저온에서도 $TiO_2$ 박막이 증착 되는 것을 확인 할 수 있었다.

• Journal of Welding and Joining
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• v.16 no.4
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• pp.39-46
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• 1998

$CO_2$ gas shielded arc welding has been characterized with its harsh arc compared to Ar-based shielding gases and with its high level of spattere specially in welding current range of 250~300 amperes. In this range of welding current, the metal transfer mode showed to be changed from short circuit to globular with the increase of welding voltage resulting in so-called the transitional mode in which both modes of transfer appeared together. To characterize the transitional mode, the short circuit events were divided into two groups, i.e. normal short circuit (N.S.C) which has short circuit time $(t_s)$ over 2msec and instantaneous short circuit (I.S.C) of $t_s$$\leq$2msec. The experimental results showed that the number of N.S.C decreased almost linearly with the increase of welding voltage and appeared to be not related with spatter generation rate. However I.S.C became to be pronounced in the transitional condition and its number reached the maximum value at around 29.0 volts. Considering the relation with the spatter generation rate, it was found that the number of I.S.C had a very strong correlation with the spatter generation rate of the transitional condition. It was further demonstrated that spatter generation rate decreased quite linearly with the decrease of I.S.C frequency. It implies that I.S.C is the most important waveform factor controlling the spatter generation of the transitional mode, i.e. in the middle range of welding current. Based on these results, It was discussed that in the transitional mode the basic concept of waveform control for suppressing spatter generation would be different from the one applied for typical short circuit transfer mode of low welding current.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.127-127
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• 2011

We investigate the transparent TFTs using a transparent ZnSnO3 (ZTO)/Ag/ZTO multilayer electrode as S/D electrodes with low resistivity of $3.24{\times}10^{-5}$ ohm-cm, and high transparency of 86.29% in ZTO based TFTs. The Transparent TFTs (TTFTs) are prepared on glass substrate coated 100 nm of ITO thin film. On atomic layer deposited $Al_2\;O_3$, 50 nm ZTO layer is deposited by RF magnetron sputtering through a shadow mask for channel layer using ZTO target with 1 : 1 molar ratio of ZnO : $SnO_2$. The power of 100W, the working pressure of 2mTorr, and the gas flow of Ar 20 sccm during the ZTO deposition. After channel layer deposition, a ZTO (35 nm)/Ag (12 nm)/ZTO(35 nm) multilayer is deposited by DC/RF magnetron sputtering to form transparent S/D electrodes which are patterned through the shadow mask. Devices are annealed in air at 300$^{\circ}C$ for 30 min following ZTO deposition. Using UV/Visible spectrometer, the optical transmittances of the TTFT using ZTO/Ag/ ZTO multilayer electrodes are compared with TFT using Mo electrode. The structural properties of ZTO based TTFT with ZTO/Ag/ZTO multilayer electrodes are analyzed by high resolution transmission electron microscopy (HREM) and X-ray photoelectron spectroscopy (XPS). The transfer and output characterization of ZTO TTFTs are examined by a customized probe station with HP4145B system in are.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.285-285
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• 2011

EUVL (Extreme Ultra Violet Lithography) is one of competitive lithographic technologies for sub-30nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance since the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.334-334
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• 2012

Transparent oxide semiconductors have recently attracted much attention as channel layer materials due to advantageous electrical and optical characteristics such as high mobility, high stability, and good transparency. In addition, transparent oxide semiconductor can be fabricated at low temperature with a low production cost and it permits highly uniform devices such as large area displays. A variety of thin film transistors (TFTs) have been studied including ZnO, InZnO, and InGaZnO as the channel layer. Recently, there are many studies for substitution of Ga in InGaZnO TFTs due to their problem, such as stability of devices. In this work, new quaternary compound materials, tantalum-indium-tin oxide (TaInSnO) thin films were fabricated by using co-sputtering and used for the active channel layer in thin film transistors (TFTs). We deposited TaInSnO films in a mixed gas (O2+Ar) atmosphere by co-sputtering from Ta and ITO targets, respectively. The electric characteristics of TaInSnO TFTs and thin films were investigated according to the RF power applied to the $Ta_2O_5$ target. The addition of Ta elements could suppress the formation of oxygen vacancies because of the stronger oxidation tendency of Ta relative to that of In or Sn. Therefore the free carrier density decreased with increasing RF power of $Ta_2O_5$ in TaInSnO thin film. The optimized characteristics of TaInSnO TFT showed an on/off current ratio of $1.4{\times}108$, a threshold voltage of 2.91 V, a field-effect mobility of 2.37 cm2/Vs, and a subthreshold swing of 0.48 V/dec.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.332-332
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• 2011

The extreme ultraviolet (EUV) radiation, whose wavelength is from 120 nm down to 10 nm, and the energy from 10 eV up to 124 eV, is widely utilized such as in photoelectron spectroscopy, solar imaging, especially in lithography and soft x-ray microscopy. In this study, we have investigated the plasma diagnostics as well as the debris characteristics between the two types of dense plasma focusing devices with coaxial electrodes of Mather and hypocycloidal pinch (HCP), respectively. The EUV emission intensity, electron temperature and plasma density have been investigated in these cylindrical focused plasma along with the debris characteristics. An input voltage of 5 kV has been applied to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ar gas at pressure ranged from 1 mTorr and 180 mTorr. The inner surface of the cathode was covered by polyacetal insulator. The central anode electrode has been made of tin. The wavelength of the EUV emission has been measured to be in the range of 6~16 nm by a photo-detector (AXUV-100 Zr/C, IRD). The visible emission has also been measured by the spectrometer with the wavelength range of 200~1,100 nm. The electron temperature and plasma density have been measured by the Boltzmann plot and Stark broadening methods, respectively, under the assumption of local thermodynamic equilibrium (LTE).

• Current Photovoltaic Research
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• v.3 no.3
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• pp.75-79
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• 2015

Recently, $Cu_2ZnSn(S_xSe_{1-x})_4$ (CZTSSe) has been received a tremendous attraction as light absorber material in thin film solar cells (TFSCs), because of its earth abundance, inexpensive and non-toxic constituents and versatile material characteristics. Kesterite CZTSSe thin films were synthesized by sulfo-selenization of sputtered Cu/Sn/Zn stacked metallic precursors. The sulfo-selenization of Cu/Sn/Zn stacked metallic precursor thin films has been carried out in a graphite box using rapid thermal annealing (RTA) technique. Annealing process was done under sulfur and selenium vapor pressure using Ar gas at $520^{\circ}C$ for 10 min. The effect of tuning Se/(S+Se) precursor composition ratio on the properties of CZTSSe films has been investigated. The XRD, Raman, FE-SEM and XRF results indicate that the properties of sulfo-selenized CZTSSe thin films strongly depends on the Se/(S+Se) composition ratio. In particular, the CZTSSe TFSCs with Se/(S+Se) = 0.37 exhibits the best power conversion efficiency of 4.83% with $V_{oc}$ of 467 mV, $J_{sc}$ of $18.962mA/cm^2$ and FF of 54%. The systematic changes observed with increasing Se/(S+Se) ratio have been discussed in detail.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1794-1796
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• 1998

In this study, the $SO_2$ addition effect on NOx removal has been conducted from a combustion flue gases by the do corona discharge-activated radical shower systems. The simulated flue gases were consisted of NO-O_2-$N_2$, NO-$CO_2-N_2-O_2$ and $NO-SO_2-CO_2-Na-O_2$([NO]o:200ppm and $[SO_2]o$:800ppm). The injection gases used as radical source gases were $NH_3$-Ar-air. $SO_2$ and NOx removal efficiency and the other by-products were measured by Fourier Transform Infrared(FTIR) as well as $SO_2$. NOx and $NO_2$ gas detectors. By-product aerosol particles were also observed by Condensation Nucleation Particle Counter(CNPC) and SEM images after sampling. The results showed that asignificant aerosol Particle formation was observed during a removal operation in corona radical shower systems. The NOx removal efficiency significantly increased with increasing applied voltage and $NH_3$ molecule ratio. The $SO_2$ removal efficiency was not significantly effected by applied voltage and slightly increased with increasing $NH_3$ molecule ratio. The NOx removal efficiency for NO-$SO_2-CO_2-N_2-O_2$ was better than that for NO-$CO_2-N_2-O_2$.

• Journal of the Semiconductor & Display Technology
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• v.11 no.4
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• pp.25-30
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• 2012

In this study, we have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IZO thin films for the organic light emitting diodes (OLED) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $O_2$ flow rate. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. IZO thin films deposited at room temperature show amorphous structure, whereas IZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation regardless of $O_2$ flow rate. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under $Ar+O_2$. The change of electrical resistivity with increasing flow rate of $O_2$ was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at $300^{\circ}C$. The change of electrical resistivity with increasing substrate temperature was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed the average transmittance over 83% in the visible range.