• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.127-128
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• 2009

CCP방식의 식각에 있어서 CF4/O2 Plasma Etch에 Ar을 첨가함으로써 Etch특성이 어떻게 변화하는지를 조사하였다. FE-SEM를 이용하여 Etch Profile를 측정하였다. 또한 Elipsometer와 Nanospec을 이용하여 Etch rate를 측정하였다. Ar의 비율이 전체의 47%정도를 차지하였을 때까지 Etch Profile이 향상되었다가 그이후로는 다시 감소하는 것을 볼 수 있었다. Ar을 첨가할수록 etch rate은 계속 향상되었다. Ar을 첨가하는 것은 물리적인 식각으로 반응하여 Etch rate의 향상과 적정량의 Ar을 첨가했을 때 Etch profile이 향상되는 결과를 얻었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05e
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• pp.96-99
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• 2003

In this dissertation the results of the combined experimental and theoretical studies designed to understand and predict the spatial growth and transport coefficients for electrons in $SF_6$ and $SF_6$-Ar mixtures have described. The transport coefficients for electrons in (0.1[%])$SF_6$-Ar, (0.5[%])$SF_6$-Ar, (1.0[%])$SF_6$-Ar, (3.0[%])$SF_6$-Ar and (5.0[%])$SF_6$-Ar mixtures were measured by time-of-flight method, and the electron energy distribution function and the parameters of the velocity and the diffusion were determined by the variation of the collision cross-sections with energy.

• Applied Science and Convergence Technology
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• v.25 no.6
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• pp.128-132
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• 2016

We investigated the effect of Ar ion sputtering on the surface electronic structure of indium tin oxide (ITO) using X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) measurements with increasing Ar ion sputtering time. XPS measurements revealed that surface contamination on ITO was rapidly removed by Ar ion sputtering for 10 s. UPS measurements showed that the work function of ITO increased by 0.2 eV after Ar ion sputtering for 10 s. This increase in work function was attributed to the removal of surface contamination, which formed a positive interface dipole relative to the ITO substrate. However, further Ar ion sputtering did not change the work function of ITO although the surface stoichiometry of ITO did change. Therefore, removing the surface contamination is critical for increasing the work function of ITO, and Ar ion sputtering for a short time (about 10 s) can efficiently remove surface contamination.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.26-29
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• 2001

SrBi$_2$Ta$_2$$O_{9}$ thin films were etched at high-density C1$_2$/CF$_{4}$/Ar in inductively coupled plasma system. The etching of SBT thin films in C1$_2$/CF$_{4}$/Ar were chemically assisted reactive ion etching. The maximum etch rate was 1300 $\AA$/min at 900W in Cl$_2$(20)/CF$_4$(20)/Ar(80). As f power increase, radicals (F, Cl) and ion(Ar) increase. The influence of plasma induced damage during etching process was investigated in terms of the surface morphology and th phase of X-ray diffraction. The chemical residue was investigated with secondary ion mass spectrometry.y.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2202-2204
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• 2005

In this dissertation the results of the combined experimental and theoretical studies designed to understand and predict the spatial growth and transport coefficients for electrons in $SF_6$ and $SF_6-Ar$ mixtures have described. The transport coefficients for electrons in (0.1[%]) $SF_6-Ar$, (0.5[%])$SF_6-Ar$,(1.0[%])$SF_6-Ar$,(3.0[%])$SF_6-Ar$ and(5.0[%]) $SF_6-Ar$ mixtures were measured by time-of- flight method, and the electron energy distribution function and the parameters of the velocity and the diffusion were determined by the variation of the collision cross-sections with energy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.6
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• pp.450-453
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• 2020

In this study, ZnO:Ga thin films were fabricated on a glass substrate using various Ar flows by an RF magnetron sputter system at room temperature. The dependencies of Ar flow on different properties were investigated. An appropriate control over the Ar flow led to the formation of a high-quality thin film. The ZnO:Ga films were formed as a hexagonal wurtzite structure with high (002) preferential orientation. The films exhibited a typical columnar microstructure and a smooth top face. The average transmittance was 85~89% within the visible area. By decreasing the Ar flow, the sheet resistance was decreased due to an increase in the grain size and a decrease in the root mean square roughness. The lowest sheet resistance of 86 Ω/□ was obtained at room temperature for the 40 sccm Ar flow.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1494-1495
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• 2007

In this dissertation the results of the combined experimental and theoretical studies designed to understand and predict the spatial growth and transport coefficients for electrons in $SF_6$ and $SF_6$-Ar mixtures have described. The transport coefficients for electrons in (0.1[%])$SF_6$-Ar, (0.5[%])$SF_6$-Ar, (1.0[%])$SF_6$-Ar, (3.0[%])$SF_6$-Ar and (5.0[%])$SF_6$-Ar mixtures were measured by time-of-flight method, and the electron energy distribution function and the parameters of the velocity and the diffusion were determined by the variation of the collision cross-sections with energy.

• Proceedings of the Korean Society of Computer Information Conference
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• 2021.07a
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• pp.587-589
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• 2021

메타버스 등 VR·AR을 기반으로 하는 가상세계의 현실화가 점차 가까워지고 있다. 이에 따라 가상세계에서 동작하는 게임이나 다양한 소프트웨어들이 등장하고 있어 이에 대한 QA 방안들이 연구되고 있다. VR·AR 게임은 일반 게임과 달리 장비의 사용 등에 따른 시간적, 공간적 특성 등 여러 가지 고려사항들이 있어 QA 진행에 어려움이 있다. 이를 극복하기 위해서는 VR·AR에 대한 이해를 바탕으로 개발팀과의 협조를 통해 콘텐츠를 세분화하여 작은 범위에서 QA를 단계적으로 진행하는 과정이 필요하다. 본 논문에서는 VR, AR 게임을 QA하는 과정에서 고려해야할 사항들을 알아본다.

• Proceedings of the Korean Society of Computer Information Conference
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• 2023.01a
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• pp.479-480
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• 2023

증강현실(Augmented Reality, AR)은 물리적 현실세계에 가상의 세계를 중첩하여 부가적인 정보나 서비스를 제공하는 것으로 대부분 스마트폰과 같이 카메라를 장착한 기기를 이용하게 된다. 스마트폰의 카메라가 마커를 인식할 경우 가상의 오브젝트가 화면에 중첩하여 보이게 되는 것이다. 카메라가 인식하는 마커를 하나 이상 사용할 수 있다. 다중 마커를 사용하는 경우 마커를 인식할 때 중첩되는 가상의 오브젝트를 동일한 것으로 사용할 수도 있고 각 마커별로 다른 가상 오브젝트를 사용할 수도 있다. 본 논문에서는 전시되어 있는 작품을 마커로 등록하여 각 이미지별로 작품의 정보가 중첩되어 나타나도록 유니티의 AR 파운데이션 프레임워크를 이용하여 구현한다. 여러 작품이 전시되므로 이를 다중 마커로 사용하고 각 작품별 정보가 각기 다르게 출력되도록 구현한다.

• Korean Journal of Construction Engineering and Management
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• v.18 no.2
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• pp.21-29
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• 2017

Recently, with having a great interest of the general public for the AR (Augmented Reality) technology, there have been lots of study to improve efficiency of a construction equipment with applying the AR technology to a construction equipment. The clear extrinsic calibration is essential to applying AR technology at the construction site without any error which came from superimposition between 'Real world' and 'Virtual world'. However, on the construction site, the clear extrinsic calibration is not possible, because of lack of time and budget for the specific survey, also, the huge error of the outdoor tracking system such as gyro, GPS system and so on. In this study, we do research about seamless superposition with unclear extrinsic calibration and the image process method for making AR navigator operating in the excavator. Based on this study, we figure that we can fully develop the AR navigator for the excavator. Furthermore, thereby operating AR navigator at many construction sites, we expect that the efficiency of the excavator will be improved. In addition, we can develop AR navigator for not only a excavator but all about construction equipment.