• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.470-474
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• 2001

This paper describes the fabrication and characteristics of CrN thin-film type pressure sensors, in which the sensing elements were deposited on SuS. 630 diaphragm by DC reactive magnetron sputtering in an argon-nitride atmosphere(Ar-(10%)N$_2$). The optimized condition of CrN thin-film sensing elements was thickness range of 3500$\AA$ and annealing condition(300$\^{C}$, 3 hr) in Ar-10%N$_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauges is obtained a high resistivity, ρ=1147.65 $\mu$Ωcm, a low temperature coefficient of resistance, TCR=186ppm/$\^{C}$ and a high temporal stability with a good longitudinal, 11.17. The output sensitivity of fabricated CrN thin-film type pressure sensors is 2.36 mV/V, 4∼20nA and the maximum non-linearity is 0.4%FS and hysteresis is less than 0.2%FS.

• Journal of the Korean institute of surface engineering
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• v.39 no.6
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• pp.263-267
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• 2006

As technology advances, there is a demand for development of hard solid lubricant coating. (Ti, Cr, Zr)N-$MoS_2$ films were deposited on AISI H13 tool steel substrate by co-deposition of $MoS_2$ with (Ti, Cr, Zr)N using a D.C. magnetron sputtering process. The influence of the $N_2Ar$ gas ratio, the amount of $MoS_2$ in the films and the bias voltage on the mechanical and structural properties of the films were investigated. The highest hardness level was observed at the $N_2/Ar$ gas ratio of 0.3. Hardness of the films did not change much with the increase of the $MoS_2$ content in the films. As the substrate bias potential was increased, hardness level of the film reached maximum at -150 V. Surface morphology of these films indicated that high hardness was attributed to the fine dome structure.

• Animal cells and systems
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• v.4 no.2
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• pp.151-155
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• 2000

Nitric oxide (NO) is a reactive free radical which plays important roles in animal physiology. To investigate involvement of NO in acrosome reaction (AR), effects of drugs which modulate the intracellular NO level were examined in mouse spermatozoa. N (G)-nitro-L-arginine (L-NA), a potent inhibitor of NO synthesis, decreased AR in a reversible manner, On the other hand, sodium nitroprusside (SNP), an NO generating agent, increased spontaneous AR. Preincubation of sperm in the presence of L-NA potentiated AR after sperm transfer into plain- or SNP-media. Methylene blue, a NO scavenging agent, decreased spontaneous AR. Taken together, it is concluded that NO positively controls AR.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.6
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• pp.64-69
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• 1984

We found that the maximum efficiency of Al-MIS (p-Si) solar ceil was shown at 80$\AA$ thickness of Al-film which was deposited with slower velocity than 0.6$\AA$/sec. It was coated with ZnS and SiO for Anti-Reflecting. In single coating, ZnS and SiO film had maximum Isc at 570 and 690 A thickness, respectively. We confirmed that these results agreed well with the quarter coating condition; n1d1=λ/4. In double coating, we held the one layer with its optimum thickness in single coating and controlled the other layer. The maximum value of Isc in this case was almost the same with it in single coating but was maintained its value in so wide range of thickness. Keeping the relation; n1d1=n2d2 as another way, we made the total thickness of film thinner to 70-90% of the sum of each optimum thickness in single coating. In this case Isc was higher value than 20% of it in any other previous case and was retained so wide range of thickness.

• Bulletin of the Korean Chemical Society
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• v.34 no.7
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• pp.1990-1994
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• 2013

A novel multi-cationic borane, tri-N-methylpyridinium substituted triarylborane, $[BAr^N_3]I_3$ ($[2]I_3$) ($Ar^N=4-(4-C_5H_4N-Me)-2,6-Me_2-C_6H_2$) was prepared from the corresponding neutral tris-pyridyl borane, $BAr_3$ (2a) ($Ar=4-(4-C_5H_4N)-2,6-Me_2-C_6H_2$). The crystal structure of 2a determined by X-ray diffraction study reveals the presence of tri-coordinate boron center with peripheral pyridyl moieties. The fluoride ion affinity of the cationic borane, $[2]I_3$ was investigated by UV-vis absorption titrations and was compared with that of neutral 2a. While 2a binds fluoride with the binding constant of $1.9{\times}10^2\;M^{-1}$ in $THF/H_2O$ (9:1 v/v) mixture, $[2]I_3$ shows a very high binding constant ($K=1.0{\times}10^8\;M^{-1}$) that is greater by six orders of magnitude than that of 2a in the same medium. This result indicates that the fluorophilicity of triarylborane can be drastically enhanced by multiple pyridinium substitutions.

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.43-47
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• 1996

$RuO_2$ thin films deposited directly on Si substrate by RF magnetron sputtering method using $RuO_2$ target have been investigated. Special interest was focused on the effect of process parameter on the surface roughness of $RuO_2$ films. Crystallization behavior and electrical properties of the films deposited at $300^{\circ}C$ were superior to those deposited at room temperature. Metallic Ru phase was formed in pure Ar and this phase had resulted poor adhesion after post annealing process in oxidizing ambient. Microstructural analysis reveals that the size of the $RuO_2$ crystallites gets smaller and the surface becomes smoother as the $O_2$ partial pressure or film thickness decreases. Irrespective of the $O_2/Ar$ ratio, resistivity of $RuO_2$ films ranged in $50~70 {\mu}{\Omega}-cm$. As the film thickness decreases, there is a thickness where the resistivity rises abruptly. Such an onset thickness turned out to be dependent n the $O_2$/Ar ratio.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.706-712
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• 1997

AlN(Aluminium Nitride) thin films were prepared using by RF sputtering method on the Si(100) and Si(111) substrates as the parameters of the substrate temperature, RF power, sputtering duration and the $N_2$/Ar ratio and investigated by X-ray diffraction, IR spectrometry, n&k analyzer. For the Si(100) substrate, the AlN thin films of (101) orientation were obtained under the conditions of room temperature and the nitrogen of 60 vol.%. For the Si(111) substrate, the (002) AlN thin films were obtained under the nitrogen of 100 vol.%. In case of the thin film prepared in the condition of above 60 vol.% of the nitrogen, the average value of the surface roughness of the film was 151$\AA$. From the changes of the half widths of E$_1$[TO] phonon bands at the wavenumber of 680$cm^{-1}$ /, it were compared of the crystallinities of the films which were grown under the different conditions. The thicknesses of AlN films were decreased dramatically in the region of the nitrogen of 40~60 vol.%. Its due to the nitridation of the Al target surface and getting low of the sputtering yield by the $N_2$/Ar ratio being increased.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 2003.04a
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• pp.73-76
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• 2003

SF$_{6}$ (Sulfur Hexafluoride) is a gaseous compound whose use is being greatly increased recently. The compound has a negligible background concentration from natural sources and is stable in most of groundwater environments. Therefore, SF$_{6}$ has potential for a dating tool for young groundwater. It has many advantages over chlorofluorocarbons (CFCs) for groundwater investigation that sampling procedure is much simpler than CFCs and its growth is continued up to at least near future in the atmosphere. However, solubility of SF$^{6}$ is so low that excess air causes large uncertainties in recharge date of groundwater. To compensate the limitation, $N_2$/Ar method can be employed to estimate excess air content. A groundwater study is currently carrying out in Jeju Island using SF$_{6}$ as an environmental tracer, Well waters and spring waters were sampled for SF$_{6}$ and $N_2$/Ar. To establish SF$_{6}$ input history in the study area, air sampling is being conducted in the area near the center of the island on a monthly and weekly basis. Based on the present data, the level of SF$_{6}$ concentration in the atmosphere of the Island is corresponding to the trend of the Northern Hemisphere.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.91-94
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• 1999

A new type of high-T$_c$ superconducting Josephson junctions has been prepared by Ar ion beam etching and electron beam lithography. YBa$_2Cu_3O_{7-x}$ (YBCO) films deposited on (001) SrTiO$_3$ single crystal substrate by pulsed laser deposition were patterned by Ar ion milling with photolithography. The narrow slit with a electroresist mask, about 1000 ${\AA}$ wide, was constructed over a 3 ${\sim}$ 5 ${\mu}$m bridge of a 1200-${\AA}$-thick YBCO film by electron beam lithography. The slit was then etched by the Ar ion beam to form a damaged 600-${\AA}$-thick YBCO. Thus prepared structure forms an S-N-S (YBCO - damaged YBCO - YBCO) type Josephson junctions. Those junctions exhibit RSI-like I-V characteristics at 77 K. The properties of the Josephson junctions such as I$_c$ R$_N$, and J$_c$ were characterized.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1102-1105
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• 2003

Energy distribution function for electrons in $SF_6$-Ar mixtures gas used by MCS-BEq algorithm has been analysed over the E/N range $30{\sim}300[Td]$ by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2(%) and 0.5(%) $SF_6$-Ar mixtures were measured by time-of-flight(TOF) method, The results show that the deduced electron drift velocities, Electrons Drift Velocities for a rang of E/N values. As a consequence, it was known that the spatial growth rates and the dielectric behaviors in $SF_6$-Ar mixtures are strongly dependent on the addition rate of $SF_6$ gas but the transport coefficients of electrons are insensitive to the addition rate of $SF_6$ gas. The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.