• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.2
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• pp.245-252
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• 2002

Numerical analysis was conducted to characterize particle deposition on a horizontal rotating disk with thermophorectic effect under laminar flow field. The particle transport mechanisms considered were convection, Brownian diffusion, gravitational settling and thermophoresis. The averaged particle deposition velocities and their radial distributions for the upper surface of the disk were calculated from the particle concentration equation in a Eulerian frame of reference for rotating speeds of 0∼1000rpm and temperature differences of 0∼5K. It was observed from the numerical results that the rotation effect of disk increased the averaged deposition velocities, and enhanced the uniformity of local deposition velocities on the upper surface compared with those of the disk at rest. It was also shown that the heating of the disk with ΔT=5K decreased deposition velocity over a fairly broad range of particle sizes. Finally, an approximate deposition velocity model for the rotating disk was suggested. The comparison of the present numerical results with the results of the approximate model and the available experimental results showed relatively good agreement between them.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.14 no.5
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• pp.424-432
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• 2002

Numerical analysis has been conducted to characterize deposition rates of aerosol particles onto a heated, rotating disk with electrostatic effect under the laminar flow field. The particle transport mechanisms considered were convection, Brownian diffusion, gravitational settling, thermophoresis and electrophoresis. The aerosol particles were assumed to have a Boltzmann charge distribution. The electric potential distribution needed to calculate local electric fields around the disk was calculated from the Laplace equation. The Coulomb, the image, the dielectrophoretic and the dipole-dipole forces acting on a charged particle near the conducting rotating disk were included in the analysis. The averaged particle deposition vetocities and their radial distributions on the upper surface of the disk were calculated from the particle concentration equation in a Eulerian frame of reference, along with a rotation speed of 0∼1,000rpm, a temperature difference of 0∼5K and a charged disk voltage of 0∼1000V.Finally, an approximate deposition velocity model for the rotating disk was suggested. The present numerical results showed relatively good agreement with the results of the present approximate model and the available experimental data.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.5
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• pp.1319-1332
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• 1995

Numerical analysis was performed to characterize the particle deposition behavior on a horizontal free-standing wafer with thermophoretic effect under the turbulent flow field. A low Reynolds number k-.epsilon. turbulence model was used to analyze the turbulent flow field around the wafer, and the temperature field for the calculation of the thermophoretic effect was predicted from the energy equation introducing the eddy diffusivity concept. The deposition mechanisms considered were convection, diffusion, sedimentation, turbulence and thermophoresis. For both the upper and lower surfaces of the wafer, the averaged particle deposition velocities and their radial distributions were calculated and compared with the laminar flow results and available experimental data. It was shown by the calculated averaged particle deposition velocities on the upper surface of the wafer that the deposition-free zone, where the deposition velocite is lower than 10$^{-5}$ cm/s, exists between 0.096 .mu.m and 1.6 .mu.m through the influence of thermophoresis with positive temperature difference of 10 K between the wafer and the ambient air. As for the calsulated local deposition velocities, for small particle sizes d$_{p}$<0.05 .mu.m, the deposition velocity is higher at the center of the wafer than at the wafer edge, whereas for particle size of d$_{p}$ = 2.0 .mu.m the deposition takes place mainly on the inside area of the wafer. Finally, an approximate model for calculating the deposition velocities was recommended and the calculated deposition velocity results were compared with the present numerical solutions, those of Schmidt et al.'s model and the experimental data of Opiolka et al.. It is shown by the comparison that the results of the recommended model agree better with the numerical solutions and Opiolka et al.'s data than those of Schmidt's simple model.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.21 no.10
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• pp.1284-1293
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• 1997

The electrostatic effect on particle deposition onto a heated, Horizontal free-standing wafer surface was investigated numerically. The deposition mechanisms considered were convection, Brownian and turbulent diffusion, sedimentation, thermophoresis and electrostatic force. The electric charge on particle needed to calculate the electrostatic migration velocity induced by the local electric field was assumed to be the Boltzmann equilibrium charge. The electrostatic forces acted upon the particle included the Coulombic, image, dielectrophoretic and dipole-dipole forces based on the assumption that the particle and wafer surface are conducting. The electric potential distribution needed to calculate the local electric field around the wafer was calculated from the Laplace equation. The averaged and local deposition velocities were obtained for a temperature difference of 0-10 K and an applied voltage of 0-1000 v.The numerical results were then compared with those of the present suggested approximate model and the available experimental data. The comparison showed relatively good agreement between them.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.12
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• pp.1715-1721
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• 2002

Numerical analysis was conducted to characterize the gas flow field and particle deposition on a horizontal freestanding semiconductor wafer under the laminar flow field at vacuum environment. In order to calculate the properties of gas, the gas was assumed to obey the ideal gas law. The particle transport mechanisms considered were convection, Brownian diffusion and gravitational settling. The averaged particle deposition velocities and their radial distributions fnr the upper surface of the wafer were calculated from the particle concentration equation in an Eulerian frame of reference for system pressures of 1 mbar~1 atm and particle sizes of 2nm~10$^4$ nm(10 ${\mu}{\textrm}{m}$). It was observed that as the system pressure decreases, the boundary layer of gas flow becomes thicker and the deposition velocities are increased over the whole range of particle size. One thing to be noted here is that the deposition velocities are increased in the diffusion dominant particle size range with decreasing system pressure, whereas the thickness of the boundary layer is larger. This contradiction is attributed to the increase of particle mechanical mobility and the consequent increase of Brownian diffusion with decreasing the system pressure. The present numerical results showed good agreement with the results of the approximate model and the available experimental data.