• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.317-320
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• 2000

We have calculated the optimum refractive index and thickness for a single layer antireflection coating as a function of active layer width and thickness in buried channel waveguides. The results using the variational method to obtain the field profiles are compared to those using the effective index method.

• Journal of Korean Ophthalmic Optics Society
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• v.1 no.1
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• pp.93-102
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• 1996

The optical system of lens must be designed to tramsmit light over wide wavelength range and to have lower reflectivity in order to obtain higher spectral transmittance. However, the reflection color light appears due to the remain-reflection light in any optical system of lens. The wavelength of the reflection color light can be controlled by the structure of the number of layers, thickness of layer, reflective index, wavelength of incidence, and substrate etc. In the optical systems of the single layer and the double layers, the reflection color light appears in the condition of the anti-reflection of ${\lambda}s/{\lambda}$ = 1.0 by the color mixture of the remain-reflection lights in the ranges of the longer wavelength side and the shorter one of the ${\lambda}s/{\lambda}$ = 1.0, and of the double layers and triple layers, the reflection color light positioned at P1 < ${\lambda}s/{\lambda}$ < P2 appears in the condition of the antireflection of ${\lambda}s/{\lambda}$ = $PI{\ll}1$ and $P2{\gg}1$. In the optical system of the multi-layers, many antireflection points are existed at the various s/ values, and the reflection color light by the color mixture of the remain-reflection lights in the ranges except for the antireflection points.

• Transactions on Electrical and Electronic Materials
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• v.5 no.1
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• pp.1-6
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• 2004

Zinc sulfide is a semiconductor with wide band gap and high refractive index and hence promising material to be used as ARC on commercial silicon solar cells. Uniform deposition of zinc sulfide (ZnS) by using chemical bath deposition (CBD) method over a large area of silicon surface is an emerging field of research because ZnS film can be used as a low cost antireflection coating (ARC). The main problem of the CBD bath process is the huge amount of precipitation that occurs during heterogeneous reaction leading to hamper the rate of deposition as well as uniformity and chemical stoichiometry of deposited film. Molar concentration of thiorea plays an important role in varying the percentage of reflectance and refractive index of as-deposited CBD ZnS film. Desirable rate of film deposition (19.6 ${\AA}$ / min), film uniformity (Std. dev. < 1.8), high value of refractive index (2.35), low reflectance (0.655) have been achieved with proper optimization of ZnS bath. Decrease in refractive index of CBD ZnS film due to high temperature treatment in air ambiance has been pointed out in this paper. Solar cells of conversion efficiency 13.8 ％ have been successfully achieved with a large area (103 mm ${\times}$ 103 mm) mono-crystalline silicon wafers by using CBD ZnS antireflection coating in this modified approach.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.6
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• pp.4131-4136
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• 2015

This paper compares and calculates more precisely the averaged reflectance of antireflection coating with different structure of single and 6 layer assuming the incident angle of light changing from $8^{\circ}$ to $60^{\circ}$ not like normal incidence as usual case. The reflectivity of AR coating of 6 layers with 180 nm thickness having index profile suggested as linear and quintic function and single layer with same thickness having even index are calculated and compared, when the wavelength of incident light ranges from 400 nm to 1200 nm. As the results the AR coating with 6 layers having quintic(linear) function index profile shows the lower reflectance about 11.6 %(14.6 %) than other index profiles, which is approximately 8 % lower reflectance compared with single layer case(about 19.6 %). This results could be applied for the better antireflection coating design applying to optical devices and filters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.251-254
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• 2001

This paper describes an efficiency improvement of buried contact solar cell (BSCS) with a structure of MgF$_2$/CeO$_2$/Ag/Cu/Ni grid/n$^{+}$ emitter/p-type Si base/p$^{+}$/Al. Theoretical and experimental investigations were performed on a double layer antireflection (DLAR) coating of MgF$_2$/CeO$_2$. We investigated CeO$_2$ films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. An optimized DLAR coating shewed a reflectance as low as 2.04 % in the wavelengths ranged from 0.4 ${\mu}{\textrm}{m}$ to 1.1 ${\mu}{\textrm}{m}$. BCSC cell efficiency was improved from 16.2 % without any AR coating to 19.9 % by employing DLAR coatings. Further details on MgF$_2$/CeO$_2$ DLAR coatings on the BCSC cells are presented in this paper.per.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.24.1-24.1
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• 2010

In practical operation, the exposed surfaces may get dirty thus degrade the performance of devices. So the combination of self cleaning and antireflection is very desirable for use in outdoor photovoltaic and displaying devices, self cleaning windows and car windshields. For the purpose of self cleaning, the surface needs to be either superhydrophobic or superhydrophilic. However, in practice AR in the visible region and self cleaning are a pair of competitive properties. To satisfy the requirements for superhydrophobic or superhydrophilic surfaces, high surface roughness is required. But it usually cause severely light scattering. Photo-responsive coatings (TiO2, ZnO etc.) can lead to superhydrophilic. However, the refractive indices are high. Thus for porous structure, controlling pore size in the underwavelength scale to reduce the light scattering is very crucial for highly transparent and self cleaning antireflection coating. Herein, we demonstrate a simple method to make high performance broadband antireflection layer on the glass surface, by "carving" the surface by hot alkali solution. Etched glass has superhydrophilic surface. By chemical modification, it turns to superhydrophobic. Enhanced transparency (up to 97%) in a broad wavelength range was obtained by short time etching. Also antifogging effect has been demonstrated, which may offer advantage for devices working at high humidity environment or underwater. Compositional dependence of the properties was observed by comparing three different commercially available glasses.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.61-66
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• 2002

A method for designing antireflection (AR) and antistatic (AS) coating layer by the use of conducting polymer as an electrically conductive transparent layer is proposed. The conducting AR coating is composed of four-layer with alternating high and low refractive index layer: silicon dioxide (n=1.44) and titanium dioxide (n=2.02) prepared at low temperature by sol-gel method are used as the low and high refractive index layer, respectively. The poly(3,4-ethylenedioxythiophene) which has the surface resistivity of 10$^4$Ω/$\square$ is used as a conductive layer. Optical constant of each ARAS coating layers such as refractive index and optical thickness were measured by 7he spectroscopic ellipsometer and from the measured optical constants the spectral properties such as reflectance and transmittance were simulated in the risible region. The reflectance of ARAS films on glass substrate was below 1 %R and the transmittance was higher than 95 % in the visible wavelength (400-700 nm). The measured AR spectral properties was very similar to its simulated results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.146-149
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• 2004

Porous silicon(PS) as an excellent light diffuser can be used as an antireflection layer without other antireflection coating(ARC) materials. PS layers were obtained by electrochemical etching(ECE) anodization of silicon wafers in hydrofluoric acid/ethanol/de-ionized(DI) water solution($HF/EtOH/H_2O$). This technique is based on the selective removal of Si atoms from the sample surface forming a layer of PS with adjustable optical, electrical, and mechanical properties. A PS layer with optimal ARC characteristics was obtained in charge density (Q) of 5.2 $C/cm^2$. The weighted reflectance is reduced from 33 % to 4 % in the wavelength between 400 and 1000 nm. The weighted reflectance with optimized PS layers is much less than that obtained with a commercial SiNx ARC on a potassium hydroxide(KOH) pre-textured multi-crystalline silicon(mc-Si) surface.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.11
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• pp.5172-5177
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• 2011

This paper presents a reflection coating design scheme in the thin-film silicon solar cell. The antireflection(high reflection) coating skill is needed in the front(back) panel of the thin-film solar cell to improve an efficiency of light absorbing. In the single structure a reflectivity is changed according to the thickness of coating for antireflection scheme and its minimum value can be obtained by controlling thickness of coating. In the symmetric multi layer structure low reflectivity can be obtained in the wide wavelength range. And we also find that high reflectivity can be obtained through multi layer structure, which has alternate layers of high and low material, for high reflection scheme in the back panel.

• Proceedings of the Korean Vacuum Society Conference
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• 1993.02a
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• pp.82-83
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• 1993