• 제목/요약/키워드: Antimony

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Flexible Thermoelectric Device Using Thick Films for Energy Harvesting from the Human Body

  • Cho, Han Ki;Kim, Da Hye;Sin, Hye Sun;Cho, Churl-Hee;Han, Seungwoo
    • Journal of the Korean Ceramic Society
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    • v.54 no.6
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    • pp.518-524
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    • 2017
  • A flexible thermoelectric device using body heat has drawn attention as a power source for wearable devices. In this study, thermoelectric thick films were fabricated by cold pressing method using p-type antimony telluride and n-type bismuth telluride powders in accordance with specific loads. Thermoelectric thick films were denser and improved the electrical and thermoelectric properties while increasing the load of the cold pressing. The thickness of the specimen can be controlled by the amount of material; specimens were approximately 700 um in thickness. Flexible thermoelectric devices were manufactured by using the thermoelectric thick films on PI (Polyimide) substrate. The process is cheap, efficient, easy and scalable. Evaluation of power generation performance and flexibility on the fabricated flexible thermoelectric device was carried out. The flexible thermoelectric device has great flexibility and good performance and can be applied to wearable electronics as a power source.

Fast Responding Gas Sensors Using Sb-Doped SnO2 Nanowire Networks (Sb-첨가 SnO2 나노선 네트워크를 이용한 고속응답 가스센서)

  • Kwak, Chang-Hoon;Woo, Hyung-Sik;Lee, Jong-Heun
    • Journal of Sensor Science and Technology
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    • v.22 no.4
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    • pp.302-307
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    • 2013
  • The Sb-doped $SnO_2$ nanowire network sensors were prepared by thermal evaporation of the mixtures between tin and antimony powders. Pure $SnO_2$ nanowire networks showed high sensor resistance in air ($99M{\Omega}$), similar gas responses to 4 diffferent gases (5 ppm $C_2H_5OH$, CO, $H_2$, and trimethylamine), and very sluggish recovery speed (90% recovery time > 800 s). In contrast, 2 wt% Sb-doped $SnO_2$ showed the selective detection toward $C_2H_5OH$ and trimethylamine, relatively low resistance ($176k{\Omega}$) for facile measurement, and ultrafast recovery speed (90% recovery times: 6 - 18 s). The change of gas sensing charactersitics by Sb doping was discussed in relation to gas sensing mechanism.

Studies on Eurytrema pancreaticum (V) Experiment for anthelmintic effect (췌질(膵蛭)에 관한 연구(硏究) (V) 구충제(驅蟲劑)에 대하여)

  • Jang, Du Hwann
    • Korean Journal of Veterinary Research
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    • v.11 no.1
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    • pp.49-53
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    • 1971
  • The anthelmentic effects of Fuadin (sodium antimony-III-bis-pyrocatechin-disulphonate), Bithionol 2-2-thiobis 4,6-dichlorophenol)), hexachlorethane and carbon tetrachloride were studied on Eurytrema pancreaticum infected in sheep and goats. The evaluation on the effects was based upon the egg reduction in the feces of the experimental animals administered the drugs. The number of eggs per 5gm. of the feces was respectively calculated before the treatments, and the follw-up for the egg reductions was carried out over a period of three or four weeks(calculated twice a week). Oral administration of Bithionol (once a day for 2 succeed days, at the rate of 75 mg per kg of bady weight) and of hexachlorethane (once a day, at the rate of 300ml per kg of body weight) did not reveal any egg reduction in sheep host. Intramuscular injection of carbon tetrachloride with olive oil (once a day, at the rate of 0.05ml per kg of body weight) did not show the egg reduction in goats. Intramuscular injections of Fuadin for 5 days (the dosage schedule was 0.5ml at 1st day, 1.0ml at 2nd and 3rd day, 1.5ml at 4th and 5th day, to amount of 5.5ml) were completely devoid the fluke eggs in the feces of goats on 4 weeks after each treatment. Throughout the studies, Fuadin was only proved its anthelmintic effect to the goats infected with E. pancreaticum. On the other hand, Bithional, hexachlorethane and carbon tetrachloride did not reveal any effect as Fuadin showed.

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Anodic Oxidation of Furfuryl Alcohol Using Metal Oxide Electrodes (금속산화물 전극을 사용한 Furfuryl Alcohol의 양극산화)

  • Yoo, Kwang-Sik;Lee, Yong-Taek
    • Applied Chemistry for Engineering
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    • v.3 no.3
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    • pp.482-490
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    • 1992
  • 2,5-dimethoxy-2,5-dihydrofurfuryl alcohol was electrosynthesized from furfuryl alcohol in methanol solution by using three kinds of metal oxide anode. The electrods were prepared by the following process : Thin layer of semiconducting material such as tin(IV)oxide and antimony(III)oxide was made on the titanium base metal in an electric furnace. The titanium metal block with the layer was coated with ${\alpha}-PbO_2$, ${\beta}-PbO_2$, and $MnO_2$ in each electrolytes by anodic deposition, respectively. The lead dioxide electrodes showed better anti-corrosive property than the manganase dioxide electrode. The yield of the product was 92% which is almost the same as the one with conventional platinum electrodes.

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Characterization on high temperature durability of InSbO4 deposited by RF magnetron sputtering (RF 마그네트론 스퍼터링법으로 제작한 고온 내구성 InSbO4 박막의 물성 평가)

  • Lee, Hyeon-Jun;Jo, Sang-Hyeon;Song, Pung-Geun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.05a
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    • pp.205-206
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    • 2012
  • $InSbO_4$ (Indium antimony oxide) 박막을 RF 마그네트론 스퍼터링법을 이용하여 $SiO_2$가 코팅된 Si wafer ($SiO_2/Si$) 기판 또는 $400^{\circ}C$에서 융해된 석영 유리 (silica glass) 기판 위에 증착시켰다. 고결정성과 화학양론의 $InSbO_4$ 막을 증착시키기에 최적화된 조성의 $In_{0.2x}Sb_{0.3x}O_x$ 타겟을 이용하여 Ar과 $O_2$ 혼합 가스 분위기에서 스퍼터링 증착을 수행하였다. $InSbO_4$ 막은 가시광 영역에서 80%이상의 투과도를 보였고, $400^{\circ}C$에서 $1100^{\circ}C$사이의 어닐링 온도에서는 $InSbO_4$ 막의 전기적 성질이 높은 고온 내구성을 가지는 것을 알 수 있었다. 그러나 $1200^{\circ}C$ 이상의 어닐링 온도에서는 새로운 $Sb_2O_4$ 상의 분리로 인해 $InSbO_4$ 막의 비저항이 급격히 증가하였다.

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Synthesis and Characterization of Tetrathiafulvalene Charge Transfer Compounds with Iron and Antimony Halides

  • Kim Young In;Choi Sung Nak;Jung Woo Sung
    • Bulletin of the Korean Chemical Society
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    • v.15 no.6
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    • pp.465-468
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    • 1994
  • The charge transfer compounds $(TTF)_4FeCl_3{\cdot}CH_3OH,\;(TTF)_4SbCl_4\;and\;(TTF)_5(SbBr_4)_2{\cdot}CH_3COCH_3$ were prepared from reactions of the TTF (tetrathiafulvalene) and metal halides. The compounds were characterized by spectroscopic (UV,IR, EPR and XPS) methods, magnetic susceptibility and electrical conductivity measurements. The d.c electrical conductivities of the pressed pellets are in the order of $10^{-1}-10^{-3} Scm^{-1}$, which lies in the range of semiconductor region at room temperature. It means that the partially ionized TTF has stacked in low-dimensional chain in each compound. Spectroscopic properties also indicate that TTF molecules are partially ionized and charge transfer has occurred from (TTF)n to Fe(III) center in $(TTF)_4FeCl_3{\cdot}CH_3OH$ whereas to the $-SbX_4^-$ entity in $(TTF)_4SbCl_4\;and\;(TTF)_5(SbBr_4)_2{\cdot}CH_3COCH_3$. The EPR g values are consistent with TTF radical formation and EPR linewidths suggest the delocalization of unpaired electrons along TTF stacks. A signal arised from metal (Fe and Sb) ions were not detected in EPR spectra, indicating that metal ion is in the diamagnetic state in each compound. The diamagnetic state was also examined by the magnetic susceptibility measurement. The magnetic properties reveal the significant interaction between the $TTF^+$ radical cations in the stacks. The oxidation state of metal ions was also investigated by XPS spectra.

The characterization of the $Si_{1-x}Sb_x$ thin films for infrared microbolometer (적외선 마이크로 볼로미터를 위한 $Si_{1-x}Sb_x$ 박막의 특성)

  • Lee, Dong-Keun;Ryu, Sang-Ouk;Yang, Woo-Seok;Cho, Seong-Mok;Cheon, Sang-Hoon;Ryu, Ho-Jun
    • Journal of the Semiconductor & Display Technology
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    • v.8 no.3
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    • pp.13-17
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    • 2009
  • we have studied characterization of microbolometer based on the co-sputtered silicon-antimony ($Si_{1-x}Sb_x$) thin film for infrared microbolometer. We have investigated the resistivity and the temperature coefficient of resistance (TCR) with annealing. We deposited the films using co-sputtering method at $200^{\circ}C$ in the Ar environment. The Sb concentration has been adjusted by applying variable DC power from Sb targets. TCR of deposited $Si_{1-x}Sb_x$ films have been measured the range of -2.3~-2.8%/K. The resistivity of the film is low but TCR is higher than the other bolometer materials. Resistivity of the films has not been affected hugely according to the low annealing temperature however the resistivity has been dramatically decreased over $250^{\circ}C$. It is caused of a phase change due to the rearrangement of Si and Sb atoms during crystallization process of the films.

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Fabrication of an Automatic Color-Tuned System with Flexibility Using a Dry Deposited Photoanode

  • Choi, Dahyun;Park, Yoonchan;Lee, Minji;Kim, Kwangmin;Choi, Jung-Oh;Lee, Caroline Sunyong
    • International Journal of Precision Engineering and Manufacturing-Green Technology
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    • v.5 no.5
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    • pp.643-650
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    • 2018
  • A self-powered electrochromic device was fabricated on an indium tin oxide-polyethylene naphthalate flexible substrate using a dye-sensitized solar cell (DSSC) as a self-harvesting source; the electrochromic device was naturally bleached and operated under outdoor light conditions. The color of the organic electrochromic polymer, poly(3,4-ethylenedioxythiophene) polystyrene sulfonate, was shifted from pale blue to deep blue with an antimony tin oxide film as a charge-balanced material. Electrochromic performance was enhanced by secondary doping using dimethyl sulfoxide. As a result, the device showed stable switching behavior with a high transmittance change difference of 40% at its specific wavelength of 630 nm for 6 hrs. To improve the efficiency of the solar cell, 1.0 wt.% of Ag NWs in the photoanode was applied to the $TiO_2$ photoanode. It resulted in an efficiency of 3.3%, leading to an operating voltage of 0.7 V under xenon lamp conditions. As a result, we built a standalone self-harvesting electrochromic system with the performance of transmittance switching of 29% at 630 nm, by connecting with two solar cells in a device. Thus, a self-harvesting and flexible device was fabricated to operate automatically under the irradiated/dark conditions.

A comparative study on applicability and efficiency of machine learning algorithms for modeling gamma-ray shielding behaviors

  • Bilmez, Bayram;Toker, Ozan;Alp, Selcuk;Oz, Ersoy;Icelli, Orhan
    • Nuclear Engineering and Technology
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    • v.54 no.1
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    • pp.310-317
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    • 2022
  • The mass attenuation coefficient is the primary physical parameter to model narrow beam gamma-ray attenuation. A new machine learning based approach is proposed to model gamma-ray shielding behavior of composites alternative to theoretical calculations. Two fuzzy logic algorithms and a neural network algorithm were trained and tested with different mixture ratios of vanadium slag/epoxy resin/antimony in the 0.05 MeV-2 MeV energy range. Two of the algorithms showed excellent agreement with testing data after optimizing adjustable parameters, with root mean squared error (RMSE) values down to 0.0001. Those results are remarkable because mass attenuation coefficients are often presented with four significant figures. Different training data sizes were tried to determine the least number of data points required to train sufficient models. Data set size more than 1000 is seen to be required to model in above 0.05 MeV energy. Below this energy, more data points with finer energy resolution might be required. Neuro-fuzzy models were three times faster to train than neural network models, while neural network models depicted low RMSE. Fuzzy logic algorithms are overlooked in complex function approximation, yet grid partitioned fuzzy algorithms showed excellent calculation efficiency and good convergence in predicting mass attenuation coefficient.

Effects of Substrate Temperature on Properties of Sb-doped SnO2 Thin Film

  • Do Kyung, Lee;Young-Soo, Sohn
    • Journal of Sensor Science and Technology
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    • v.31 no.6
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    • pp.371-375
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    • 2022
  • Antimony-doped tin oxide (ATO) thin films, one type of transparent conductive oxide (TCO) films, were prepared on a SiO2-coated glass substrate with different substrate temperatures by a radio-frequency magnetron sputtering system. Structural, optical, and electrical characteristics of the deposited ATO films were analyzed using X-ray diffraction, scanning electron microscopy, alpha-step, ultraviolet-visible spectrometer, and Hall effect measurement. The substrate temperature during deposition did not affect the basic crystal structure of the films but changed the grain size and film thickness. The optical transmittance of the ATO films deposited at different substrate temperatures was over 70%. The lowest sheet resistance and resistivity were 8.43 × 102 Ω/sq, and 0.3991 × 10-2 Ω·cm, respectively, and the highest carrier concentration and mobility were 2.36 × 1021 cm-3 and 6.627 × 10-2 cm2V-1s-1, respectively, at a substrate temperature of 400 ℃.