• 제목/요약/키워드: Anodization voltage variation

검색결과 6건 처리시간 0.031초

Investigation of Functional 6061 Aluminum Alloy Oxide Film with Anodization Voltage and its Corrosion Resistance

  • Jisoo Kim;Chanyoung Jeong
    • Corrosion Science and Technology
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    • 제22권6호
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    • pp.399-407
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    • 2023
  • This study investigated the formation of oxide films on 6061 aluminum (Al) alloy and their impacts on corrosion resistance efficiency by regulating anodization voltage. Despite advantageous properties inherent to Al alloys, their susceptibility to corrosion remains a significant limitation. Thus, enhancing corrosion resistance through developing protective oxide films on alloy surfaces is paramount. The first anodization was performed for 6 h with an applied voltage of 30, 50, or 70 V on the 6061 Al alloy. The second anodization was performed for 0.5 h by applying 40 V after removing the existing oxide film. Resulting oxide film's shape and roughness were analyzed using field emission-scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). Wettability and corrosion resistance were compared before and after a self-assembled monolayer (SAM) using an FDTS (1H, 1H, 2H, 2H-Perfluorodecyltrichlorosilane) solution. As the first anodization voltage increased, the final oxide film's thickness and pore diameter also increased, resulting in higher surface roughness. Consequently, all samples exhibited superhydrophilic behavior before coating. However, contact angle after coating increased as the first anodization voltage increased. Notably, the sample anodized at 70 V with superhydrophobic characteristics after coating demonstrated the highest corrosion resistance performance.

박막 알루미늄을 이용한 규칙적으로 정렬된 나노급 미세기공 어레이 제조기술 개발 (Development of Fabrication Technique of Highly Ordered Nano-sized Pore Arrays using Thin Film Aluminum)

  • 이재홍;김창교
    • 한국전기전자재료학회논문지
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    • 제18권8호
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    • pp.708-713
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    • 2005
  • An alumina membrane with nano-sized pore array by anodic oxidation using the thin film aluminum deposited on silicon wafer was fabricated. It Is important that the sample prepared by metal deposition method has a flat aluminum surface and a good adhesion between the silicon wafer and the thin film aluminum. The oxidation time was controlled by observation of current variation. While the oxalic acid with 0.2 M was used for low voltage anodization under 100 V, the chromic acid with 0.1 M was used for high voltage anodization over 100 V. The nano-sized pores with diameter of $60\~120$ nm was obtained by low voltage anodization of $40\~80$ V and those of $200\~300$ nm was obtained by high voltage anodization of $140\~200$ V. The pore widening process was employed for obtaining the one-channel with flat surface because the pores of the alumina membrane prepared by the fixed voltage method shows the structure of two-channel with rough surface. Finally, the sample was immersed to the phosphoric acid with 0.1 M concentration to etching the barrier layer.

박막 알루미늄을 이용한 나노미터 크기의 미세기공 형성 (Fabrication of the alumina membrane with nano-sized pore array using the thin film aluminum)

  • 이병욱;이재홍;이의식;김창교
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.120-122
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    • 2005
  • An alumina membrane with nano-sized pore array by anodic oxidation using thin film aluminum deposited on silicon wafer was fabricated. It is important that the sample prepared by metal deposition method has a flat aluminum surface and a good adhesion between the silicon wafer and the thin film aluminum. The oxidation time was controlled by observation of current variation. While the oxalic acid with 0.2M was used for low voltage anodization under 100V, the chromic acid with 0.1M was used for high voltage anodization over 100V. The nano-sized pores with diameter of 60~120nm was obtained by low voltage anodization of 40~90V and those of 200~300nm was obtained by high voltage anodization of 120~160V. Finally, the sample was immersed to the phosphoric acid with 0.1M concentration to etching the barrier layer. The sample will be applied to electronic sensors, field emission display, and template for nano-structure.

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전도성 AFM 탐침에 의한 YBa2Cu3O7-x 스트립 라인의 산화피막 형성 (Anodization Process of the YBa2Cu3O7-x Strip Lines by the Conductive Atomic Force Microscope Tip)

  • 고석철;강형곤;임성훈;한병성;이해성
    • 한국전기전자재료학회논문지
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    • 제17권8호
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    • pp.875-881
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    • 2004
  • Fundamental results obtained from an atomic force microscope (AFM) chemically-induced direct nano-lithography process are presented, which is regarded as a simple method for fabrication nm-scale devices such as superconducting flux flow transistors (SFFTs) and single electron tunneling transistors (SETs). Si cantilevers with Pt coating and with 30 nm thick TiO coating were used as conducting AFM tips in this study. We observed the surfaces of superconducting strip lines modified by AFM anodization' process. First, superconducting strip lines with scan size 2 ${\mu}{\textrm}{m}$${\times}$2 ${\mu}{\textrm}{m}$ have been anodized by AFM technology. The surface roughness was increased with the number of AFM scanning, The roughness variation was higher in case of the AFM tip with a positive voltage than with a negative voltage in respect of the strip surface. Second, we have patterned nm-scale oxide lines on ${YBa}-2{Cu}_3{O}_{7-x}$ superconducting microstrip surfaces by AFM conductive cantilever with a negative bias voltage. The ${YBa}-2{Cu}_3{O}_{7-x}$ oxide lines could be patterned by anodization technique. This research showed that the critical characteristics of superconducting thin films were be controlled by AFM anodization process technique. The AFM technique was expected to be used as a promising anodization technique for fabrication of an SFFT with nano-channel.

Nanotube Shape Variation on the Ti-xNb Alloys with Alloying Elements and Applied Potentials

  • Byeon, In-Seop;Choe, Han-Cheol
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2015년도 춘계학술대회 논문집
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    • pp.112-112
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    • 2015
  • The purposed of this work was to determine nanotube shape variation on the Ti-xNb alloys with alloying elements and applied potentials. Samples were prepared by arc melting, followed by followed by homogenization for 12 hr at $1000^{\circ}C$ in argon atmosphere. This study was evaluated the phase and microstructure of Ti-xNb alloys using an X-ray diffraction (XRD) and optical microscopy (OM). The morphology of the samples was investigated with a field-emission scanning electron microscope (FE-SEM) and energy dispersive X-ray spectroscopy (EDS). The nanotube on the alloy surface was formed in 1 M $H_3PO_4$ with small additions of NaF 0.8 wt.%. All anodization treatments were carried out using a scanning potentiostat (Model 362, EG&G, USA) at constant voltage 30 V for 120 min, respectively. The morphology of the samples was investigated with a field-emission scanning electron microscope (FE-SEM) and energy dispersive X-ray spectroscopy (EDS). Surface characteristics of nanotbue formed on Ti-xNb alloys was investigated by potentiodynamic test and potentiostatic in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. It was observed that the changed ${\alpha}$ phase to ${\beta}$ phase with Nb content.

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다공질 실리콘 구조를 이용한 화학 및 바이오 센서 (Porous silicon-based chemical and biosensors)

  • 김윤호;박은진;최우석;홍석인;민남기
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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    • pp.2410-2412
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    • 2005
  • In this study, two types of PS substrate were fabricated for sensing of chemical and biological substances. For sensing of the humidity and chemical analyzes such as $CH_3OH$ or $C_2H_5OH$, PS layers are prepared by photoelectrochemical etching of silicon wafer in aqueous hydrofluoric acid solution. To evaluate their sensitivity, we measured the resistance variation of the PS diaphragm. As the amplitude of applied voltage increases from 2 to 6Vpp at constant frequency of 5kHz, the resistance variation for humidity sensor rises from 376.3 to $784.8{\Omega}$/%RH. And the sensitivities for $CH_3OH$ and $C_2H_5OH$ were 0.068 uA/% and 0.212 uA/%, respectively. For biological sensing application, amperometric urea sensors were fabricated based on porous silicon(PS), and planar silicon(PLS) electrode substrates by the electrochemical methods. Pt thin film was sputtered on these substrates which were previously formed by electrochemical anodization. Poly (3-methylthiophene) (P3MT) were used for electron transfer matrix between urease(Urs) and the electrode phase, and Urs also was by electrochemically immobilized. Effective working area of these electrodes was determined for the first time by using $Fe(CN)_6^{3-}/Fe(CN)_6^{4-}$ redox couple in which nearly reversible cyclic voltammograms were obtained. The $i_p$ vs $v^{1/2}$ plots show that effective working electrode area of the PS-based Pt thin film electrode was 1.6 times larger than the PLS-based one and we can readily expect the enlarged surface area of PS electrode would result in increased sensitivity by ca. 1.6 times. Actually, amperometric sensitivity of the Urs/P3MT/Pt/PS electrode was ca 0.91uA/$mM{\cdot}cm^2$, and that of the Urs/P3MT/Pt/PLS electrode was ca. 0.91uA/$mM{\cdot}cm^2$ in a linear range of 1mmol/L to 100mmol/L urea concentrations

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