• Title/Summary/Keyword: Anodic material

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A STUDY ON COPPER DEPOSITION PROCESS DURING ANODIC OXIDATION OF ALUMINIUM ALLOY

  • Koh, I.S.;Han, S.H.;Shin, D.H.
    • Journal of the Korean institute of surface engineering
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    • v.32 no.3
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    • pp.444-446
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    • 1999
  • The structure and composition of anodic films, formed on 6063 commercial aluminium alloy at constant current density of $1.5A/^dm2$ with various superimposed cathodic current ratio, in the range 0~33%, in the 11% $H_2SO_4$ with various concentration of $CuSO_4{\cdot}5H_2O$, in the range 0~75 g/l, without cathodic current are generally porous-type and no sign of Cu co-deposition appearance, suggesting that cathodic current is an important factor in the Cu co-deposition. Comparison with the anodic film thickness measurement results obtained from anodic film formed by direct anodic current and anodic film formed by superimposed various portion of cathodic current, the portion of cathodic current of input current increases with decrease of anodic film thickness and increases with increase of concentration of $Cu_2S{\;}and{\;}Cu_2O$ in the anodic film.

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ALLOY STRUCTURE AND ANODIC FILM GROWTH ON RAPIDLY SOLIDIFIED AL-SI-BASED ALLOYS

  • Kim, H.S.;Thompson, G.E.;Wood, G.C.;Wright, I.G.;Maringer, R.E.
    • Journal of the Korean institute of surface engineering
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    • v.17 no.2
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    • pp.29-40
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    • 1984
  • The structure of rapidly solidified Al-Si-based alloys and its relationship to subsequent anodic film growth in near neutral and acid solutions have been investigated. Solidification of the alloys proceeds via pre-dendritic nuclei, associated with rugosity of the casting surface, from which cellular-type growth, comprised of aluminium-rich material surrounded by silicon-containing material, emanates. Observation of ultramicrotomed sections of the alloys and their anodic films reveals the local oxidation of the silicon-rich phase and its incorporation into the anodic alumina film, formed in near neutral solutions. Such incorporation occurs but resultant isolation of the silicon-rich phase is not possible for anodizing in phosphoric acid, and a three-dimensional network of the oxidized silicon-containing phase, with continuing development of porous anodic alumina, is observed.

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The Study on Anodic Bonding (양극접합에 관한 연구)

  • 정철안;박정도;정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.338-341
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    • 1996
  • Anodic bonding is a key technology for micromechanical components. The main advantages of this method can be formed in a batch process, over large areas, and is permanent and irreversible. In this paper, the bonding was performed at temperatures ranging from 300 to 450 $^{\circ}C$, voltages 400 to 1000 V, and times 10 to 30 minutes. The sizes of the Si and the Pyrex #7740 glass were 6 mm $\times$6 mm, respectively. Bonding processes and voids were observed by the optical microscope, and the composition of the anodic bonding interface was analyzed by the SIMS. Optimum condition of the anodic bonding was at temperature above 40$0^{\circ}C$ without regard to voltage.

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Electrical Conductivity Change of (Mn, X) oxide by Anodic Deposition (Anodic deposition법으로 제조한 (Mn, X)산화물의 전기전도도 변화)

  • Kim, Bong-Seo;Lee, Dong-Yoon;Lee, Hee-Woong;Chung, Won-Sub
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.386-387
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    • 2005
  • anodic deposition법으로 제조된 $MnO_2$와 (Mn, Zn) 산화물의 전도도를 측정하였다. 제조된 Mn 산화물의 조성은 XRD와 EDS를 이용하여 $MnO_2$ 와 Mn 복합산화물로 확인되었다. DV-Xa법으로 계산된 이론 전자상태 계산 결과 천이금속을 첨가하게 되면, Mn 복합 산화물의 에너지 갭이 감소하는 것으로 나타났다. anodic deposition법으로 제조된 $MnO_2$와 Mn 복합 산화물의 전기전도도를 비교하면 천이금속이 첨가된 복합 산화물의 특성이 우수한 것으로 나타났다.

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Growth of High Uniform Polycrystalline Grain on the Highly Ordered Porous Anodic Alumina (다공질 양극산화 피막을 이용한 고균일 다결정 살리콘의 성장)

  • Kim, Jong-Yeon;Han, Jin-Woo;Kim, Young-Hwan;Kim, Byoung-Yong;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.375-375
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    • 2007
  • In the conventional crystallization method, thepoly-Si TFTs show poor device-to-device uniformity because of the random location of the grain boundaries. However, our new crystallization method introduced in this paper employed substrate-embedded seeds on the highly ordered anodic alumina template to control both the location of seeds and the number of grain boundaries intentionally. In the process of excimer laser crystallization (ELC), a-Si film deposited on the anodic alumina by low pressure chemical vapor deposition (LPCVD) is transformed into fine poly-Si grains by explosive crystallization (XC) prior to primary melting. At the higher energy density, the film is nearly completely melted and laterally grown by super lateral growth (SLG) from remained small part of the fine poly-Si grains as seeds at the Si/anodic alumina interface. Resultant grain boundaries have almost linear functions of the number of seeds in concavities of anodic alumina which have a constant spacing. It reveals the uniformity of. device can be enhanced prominently by controlling location and size of pores which contains fine poly~Si seeds under artificial anodizing condition.

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Preparation of Nano Wire by Anodic Oxidation I. Characteristics of Alumina Nano-Template by Anodic Oxidation (양극산화법에 의한 나노와이어 제조I. 알루미나 나노 템플레이트의 특성)

  • Jo, Su-Haeng;O, Han-Jun;Park, Chi-Seon;Jang, Jae-Myeong;Ji, Chung-Su
    • Korean Journal of Materials Research
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    • v.12 no.2
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    • pp.121-128
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    • 2002
  • Anodic alumina layer can be used as templates for preparation of nano-structured materials, because porous oxide layer on aluminum shows a uniform pore size and a high pore density. In order to find out possibility for template material to prepare nano wire, the effects of the anodic applied potential, anodic time and the temperature of electrolyte on pore diameter of anodic alumina layer were studied using SEM and AFM. The pore diameter of anodic alumina layer increased with applied anodic potential and electrolytic temperature. Especially, the pore diameter of anodic oxide layers formed in chromic acid can be well replicated by widening process in $H_3$$PO_4$solution.

Preparation of Tantalum Anodic Oxide Film in Citric Acid Solution - Evidence and Effects of Citrate Anion Incorporation

  • Kim, Young-Ho;Uosaki, Kohei
    • Journal of Electrochemical Science and Technology
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    • v.4 no.4
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    • pp.163-170
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    • 2013
  • Tantalum anodic oxide film was prepared in citric acid solution of various concentrations and the prepared Ta anodic oxide film was characterized by various electrochemical techniques and X-ray photoelectron spectroscopy (XPS). The prepared Ta anodic oxide film showed typical n-type semiconducting properties and the dielectric properties were strongly dependent on the citric acid concentration. The variation of electrochemical and electronic properties was explained in terms of electrolyte anion incorporation into the anodic oxide film, which was supported by XPS measurements.

Mechanical Characteristics of MLCA Anodic Bonded on Si wafers (실리콘기판위에 양극접합된 MLCA의 기계적 특성)

  • Kim, Jae-Min;Lee, Jong-Choon;Yoon, Suk-Jin;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.160-163
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    • 2003
  • This paper describes on anodic bonding characteristics of MLCA(Multi Layer Ceramic Actuator) to Si-wafer using evaporated Pyrex #7740 glass thin-films for MEMS applications. Pyrex #7740 glass thin-films with same properties were deposited on MLCA under optimum RF magneto conditions(Ar 100 %, input power $1\;/cm^2$). After annealing in $450^{\circ}C$ for 1 hr, the anodic bonding of MLCA to Si-wafer was successfully performed at 600 V, $400^{\circ}C$ in - 760 mmHg. Then, the MLCA/Si bonded interface and fabricated Si diaphragm deflection characteristics were analyzed through the actuation test. It is possible to control with accurate deflection of Si diaphragm according to its geometries and its maximum non-linearity is 0.05-008 %FS. Moreover, any damages or separation of MICA/Si bonded interfaces do not occur during actuation test. Therefore, it is expected that anodic bonding technology of MICA/Si wafers could be usefully applied for the fabrication process of high-performance piezoelectric MEMS devices.

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Anodic bonding characteristics of MCA to Si-wafer using pyrex #7740 glass intermediatelayer for MEMS applications (파일렉스 #7740 글라스 매개층을 이용한 MEMS용 MCA와 Si기판의 양극접합 특성)

  • Ahn, Jung-Hac;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.374-375
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    • 2006
  • This paper describes anodic bonding characteristics of MCA to Si-wafer using evaporated Pyrex #7740 glass thin-films for MEMS applications. Pyrex #7740 glass thin-films with the same properties were deposited on MCA under optimum RF sputter conditions (Ar 100 %, input power $1\;W/cm^2$). After annealing at $450^{\circ}C$ for 1 hr, the anodic bonding of MCA to Si-wafer was successfully performed at 600 V, $400^{\circ}C$ in $110^{-6}$ Torr vacuum condition. Then, the MCA/Si bonded interface and fabricated Si diaphragm deflection characteristics were analyzed through the actuation and simulation test. It is possible to control with accurate deflection of Si diaphragm according to its geometries and its maximum non-linearity being 0.05-0.08 %FS. Moreover, any damages or separation of MCNSi bonded interfaces did not occur during actuation test. Therefore, it is expected that anodic bonding technology of MCNSi-wafers could be usefully applied for the fabrication process of high-performance piezoelectric MEMS devices.

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Growth mechanism of anodic oxide for MCT passivation (MCT 표면보호를 위한 양극산화막 성장)

  • 정진원;왕진석
    • Electrical & Electronic Materials
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    • v.8 no.3
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    • pp.352-356
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    • 1995
  • Native oxide layer on MCT (HgCdTe) has been grown uniformly in H$\_$2/O$\_$2/ electrolyte through anodic oxidation method. It has been determined that anodic oxidation of HgCdTe in H$\_$2/O$\_$2/ electrolyte proceeds immediately with the input of constant currents without any induction time required for anodic oxideation in KOH electrolyte. Oxide layer with the resistivity of 2*10$\^$10/.ohm.cm and the refractive index of 2.1 suggested the possibility of well matching combination layer with ZnS for MCT MIS device. XPS results indicated that the major components of oxide layer grown in H202 solution is TeO$\_$2/ with the possibility of small amounts of CdTeO$\_$3/.

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