• Journal of the Korean Magnetics Society
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• v.13 no.6
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• pp.243-245
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• 2003

The anomalous angular modulation of magnetoresistance in Co/Cu multilayers is explained assuming substrate-induced magnetic anisotropy. The magnetic parameters of Co/Cu multilayers is determined using angular modulation of magnetoresistance and theoretical model including substrate-induced anisotropy. This mechanism introduces a new possible way of modulating the giant magnetoresistance.

• Journal of Magnetics
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• v.5 no.4
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• pp.135-138
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• 2000

In order to study the effect of the magnetic anisotropy on the giant magnetoresistance in a Co/Cu multilayered system, the angle dependent magnetoresistance (MR) was measured. The experimental results showed that the maximum MR ratio depends on the angle between the direction of the applied field and the easy axis. The angular modulation of the MR ratio can be explained by the alignments of the two 'effective' magnetization vectors that are bound to their own easy axes. Two maxima observed in MR loops at the second antiferromagnetic maximum are discussed in relation to the magnetic anisotropy, The simulated results under the assumption of the existence of two in-plane easy axes in the sample are compared with the experiments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1050-1053
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• 2001

There is great interest in developing magnetoresistance(MR) sensor, using ferromagnetic, electrically non-magnetic conducting and antiferromagnetic films, especially for the use in weak magnetic fields. Here, we report single and Wheatstone-bridge type of MR sensors made in Si(001)/HiO(300$\AA$)/NiFe bilayers. Angular dependence of MR profiles was measured in Si(001)/NiO(300$\AA$)/NiFe(450$\AA$) films as a function of an angle between current and applied field direction, also, linearity was determined. AMR characteristics of single MR sensors was well explained with single domain model. Good linearity in 45$^{\circ}$Wheatstone-bridge type of MR sensors consisting of 4 single MR sensors made in Si(001)/NiO(300$\AA$)/NiFe(450$\AA$) was shown in the range of about $\pm$50 Oe.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.307-314
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• 2000

In order to study the effect of the magnetic anisotropy on the giant magnetoresistance (GMR), the angle dependent magnetoresistance (MR) was measured. The experimental results show that the maximum MR ratio depends on the angle between the direction of the applied field and that of the easy axis. The angular modulation of the MR ratio can be explained by the alignments of the two 'effective' magnetization vectors that are bound to their own easy axes. The typical property of MR loops at 2$\^$nd/ antiferromangtic maximum (AFM) such as two maxima was discussed in relation with the magnetic anisotropy (MA). The simulated results under an assumption of the two in-plane easy axes, which exist in the sample, were compared with the experiments.

• Proceedings of the Korean Magnestics Society Conference
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• 1999.10a
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• pp.14-15
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• 1999

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.260-263
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• 2002

There is great interest in developing magnetoresistance(MR) sensor, using ferromagnetic, electrically non-magnetic conducting and antiferromagnetic films, especially for the use in weak magnetic fields. Here, we report single and Wheatstone-bridge type of MR sensors made in Si(001)/NiO($300{\AA}$)/NiFe bilayers. Angular dependence of MR profiles was measured in Si(001)/NiO($300{\AA}$)/NiFe($450{\AA})$ films as a function of an angle between current and applied field direction, also, linearity was determined. AMR characteristics of single MR sensors was well explained with single domain model. Good linearity in $45^{\circ}$ Wheatstone-bridge type of MR sensors consisting of 4 single MR sensors made in Si(001)/NiO($300{\AA}$)/NiFe($450{\AA})$ was shown in the range of about ${\leq}{\pm}5$ Oe.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.355-358
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• 2000

Magnetoresistance changes of NiFe thin films were investigated as a function of deposition temperature. DC magnetron sputtering was employed to fabricate Ta/NiFe(t)/Ta thin films on Si(001) substrates with in-situ field or with no-field. The thickness(t) of NiFe films was a range of 4 to 15nm. Substrate temperature was a range of 30 to 400$^{\circ}C$. MR measurement was carried out as a function of angle $\theta$, between external field and current direction. MR ratio increased with increasing substrate temperature, also, max. MR ratio was observed in samples deposited at 300$^{\circ}C$. With increasing upto 400$^{\circ}C$, MR ratio was rapidly decreased in the case of thinner NiFe films. In non-field deposited NiFe films, both angle $\theta$=0, 90。, there was no significant change in MR curves. However, MR curves of in-situ field deposited NiFe films were different in both angles $\theta$=0 and 90。