• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2004.10a
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• pp.203-206
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• 2004

Copper-based bulk amorphous alloy composite was synthesized by using the copper-coated $Cu_{54}Ni_{6}Zr_{22}Ti_{18}$ amorphous powder which was obtained by argon gas atomization. The amorphous powder having a super-cooled liquid region of 53 K was coated by crystalline copper by electroless coating. The consolidation was carried out by manufacturing performs and by the subsequent warm extrusion at 743 K. During the compression test at the room temperature, the composite containing a large fraction of crystalline copper displayed a larger plastic strain after yielding. FEM simulation revealed change in fracture modes in the composites depending on the amount of crystalline copper in the composites.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.280-280
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• 2012

We examined ammonia diffusion on the surface of amorphous ice film through the measurement of decreasing residual quantity of $NH_3$ molecules compared to $H_2O$. The populations of $NH_3$ molecules on the surface of amorphous ice were monitored by using the techniques of temperature programmed reactive ion scattering (TPRIS) method. The ratio of intensity between ammonia and water was examined as a function of time at controlled temperature. When ammonia molecules were externally added onto an ice film at a temperature of 80 K, ammonia coverage with regard to ice was 0.12-0.16 ML. The intensity of ammonia molecules on the surface of ice decreased as time increased and the extent of decreased intensity of ammonia increased as controlled temperature increased. Moreover, energy barrier was estimated to be $51kJmol^{-1}$ on amorphous ice film. The results of the experiment indicate that ammonia molecules have a property of vertical diffusion into amorphous ice and the energy barrier of ammonia diffusion into bulk of ice is higher than that of hydrogen bonding.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.403-404
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• 2012

We fabricated TFT devices with the GeSe channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is high. Based on the experiments, we draw the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.280-281
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• 2011

We fabricated the devices of TFT type with the amorphous chalcogenide channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is about 4 order. Based on the experiments, we contained the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• Journal of Korea Foundry Society
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• v.22 no.6
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• pp.304-308
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• 2002

The new Cu-Zr-Ti-Ni-Pd amorphous alloy system has been introduced and manufactured using melt-spinning and Cu-mold die casting methods. Amorphous formability, the supercooled liquid region before crystallization and mechanical properties of the alloys were examined. The reduced glass transition temperature(Trg = Tg/Tm) and the supercooled liquid region(${\Delta}$Tx = Tx-Tg) of $Cu_{49}Zr_{30}Ti_{10}Ni_5Pb_6$ alloy were 0.620 and 57 K respectively. $Cu_{49}Zr_{30}Ti_{10}Ni_5Pb_6$ amorphous alloy was produced in the rod shape with 2mm diameter using the Cu-mold die casting. The hardness value of the amorphous bulk alloy was 432 DPN.

• Journal of Korea Foundry Society
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• v.22 no.6
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• pp.288-292
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• 2002

Ni-base amorphous alloys were manufactured using melt-spinning and Cu-mold die casting methods. Amorphous formability, the supercooled liquid region before crystallization and mechanical properties were examined. The reduced glass transition temperature and the supercooled liquid region of $Ni_{51} Nb_{20} Zr_9 Ti_9 Co_8 Cu_3$alloy were 0.621 and 46 K respectively. $Ni_{51} Nb_{20} Zr_9 Ti_9 Co_8 Cu_3$ alloy was produced in the rod shape 3mm diameter using the Cu-mold die casting. Hardness, compression strength, elongation and elastic modulus of the alloy were 850 DPN, 2.75 GPa, 1.8% and 150 GPa respectively. Moreover, compression strength of 2.75 GPa was the highest value in the amorphous bulk alloy produced up to now.

• Journal of the Korean Society for Heat Treatment
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• v.12 no.4
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• pp.320-326
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• 1999

In rapidly solidified $Al_{92-x}Nd_8$(Cu,Ag)x ($0{\leq}X{\leq}10at%$) alloys, amorphous single phases were obtained in the ranges of $Oat%{\leq}X{\leq}4at%$ for Al-Nd-Cu system and $Oat%{\leq}X{\leq}6at%$ for Al-Nd-Ag system, respectively. Mesoscopic structures consisted of amorphous and crystalline phases were formed above solute ranges. It was founded that the mesoscopic structures were also formed near 1st exothermic peak on DSC curve by aging in amorphous single phase alloys. For example, amorphous $Al_{92-x}Nd_8$(Cu,Ag)x (X=2.4at%) alloys containing nanoscale Al particles and compounds, i.e., mesoscopic structure, exhibited higher tensile fracture strength(${\sigma}_f$) than those of amorphous single phase alloys with the same composition. The ${\sigma}_f$ showed a maximum value in the $V_f$ ranges of 10~15%. The reason is presumed that the nanoscale precipitates which have higher mechanical strength compared with the amorphous phase with the same composition act as an effective resistance to shear deformation of the amorphous matrix.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.299-306
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• 1998

Crystallization of the amorphous silicon needs activation. Thermal energy through laser annealing, furnace annealing and rapid thermal process (RTP) has been convinced to crystallize the amorphous silicon thin film. It is expected that some other type of energy like mechanical energy can help to crystallize the amorphous silicon thin film. In this study, mechanical energy through wet blasting of silica slurry and silicon ion implantation has been applied to the amorphous silicon thin film deposited with LPCVD technique. RTP was employed for the annealing of this mechanically-damaged amorphous silicon thin film. For the characterization of the crystallized silicon thin film, XRD and Raman analysis were conducted. In this study, it is shown that the mechanical damage is effective to enhance the crystallization of amorphous silicon thin film.

• Proceedings of the KOSOMBE Conference
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• v.1998 no.11
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• pp.293-294
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• 1998

In this paper, the electric properties of amorphous selenium specimen has been investigated. Amorphous selenium was thermally evaporated on the glass plate which had been deposited onto the interface by aluminium as an electrode. On the surface of the amorphous selenium, the aluminium electrode was deposited again in order to make an unit cell for dark current measurement. The dark current was measured while applying the bias voltage across the selenium layer in the range of 0V-2500 Volts. The leakage property of the amorphous selenium was significantly low at even high voltage range so it has good advantage as a X-ray receptor for digital radiography. For further study, the C-V curves measurement according to thicker amorphous selenium layer.

• Korean Journal of Materials Research
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• v.15 no.12
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• pp.802-808
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• 2005

The hydrogen sorption speeds of $Zr_{57}V_{36}Fe_7$ amorphous alloy and its crystallized alloys were evaluated at room temperature $Zr_{57}V_{36}Fe_7$ amorphous alloy was prepared by ball milling. The amorphous alloy was crystallized through two stages. Initially, $\alpha-Zr$ solid solution was appeared from the amorphous phase. Two cubic Laves compounds were precipitated afterwards from the remained amorphous and from excessively saturated solid solution at higher temperature. The hydrogen sorption speed of the partially crystallized alloy was higher than that of amorphous. The enhanced sorption speed of partially crystallized alloy was explained in terms of surface oxygen stability which has been known to retard the activation of amorphous alloys. The retardation could be reduce by crystallization process resulting in the observed increase in sorption property.