• Journal of the Semiconductor & Display Technology
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• v.12 no.4
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• pp.49-54
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• 2013

In this study, we have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $O_2$ flow rate. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. IZO thin films deposited at room temperature show amorphous structure, whereas IZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation regardless of $O_2$ flow rate. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under Ar+$O_2$. The change of electrical resistivity with increasing flow rate of $O_2$ was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at $300^{\circ}C$. The change of electrical resistivity with increasing substrate temperature was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed the average transmittance over 85% in the visible range. The current density and the luminance of OLED devices with IZO thin films deposited at room temperature in 0.1sccm $O_2$ ambient gas are the highest amongst all other films. The optical band gap energy of IZO thin films plays a major role in OLED device performance, especially the current density and luminance.

• Journal of the Korea Society of Computer and Information
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• v.16 no.1
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• pp.47-52
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• 2011

This paper collect sleep environment data of bedroom to sleeping, and analyzing the relationship between conditions with obtained data and sleep. We provide the optimal sleep environment of individual by extracting the simulation model based on it. The experiments was using temperature/humidity sensor(SHT11) and ambient light sensors(GL5507). For extraction of tossing and turning, we use difference image method in motion extraction from video. In addition, the information of weight can affect to sleep, it was entered such as ratio of fatigue, drinking, empty stomach. As a result, we are able to extract the optimal sleep environment. The future, we will try to improve to help to lead more pleasant daily life providing proper indoor environment changes depending on the situation even a partial of organic ubiquitous living environments such as eating, work ete. as well as certain sleep circumstances.

• Korean Journal of Materials Research
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• v.23 no.4
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• pp.215-218
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• 2013

Vanadium dioxide ($VO_2$) is an attractive material for smart window applications where the transmittance of light can be automatically modulated from a transparent state to an opaque state at the critical temperature of ${\sim}68^{\circ}C$. Meanwhile, F : $SnO_2$ (F-doped $SnO_2$, FTO) glass is a transparent conductive oxide material that is widely used in solar-energy-related applications because of its excellent optical and electrical properties. Relatively high transmittance and low emissivity have been obtained for FTO-coated glasses. Tunable transmittance corresponding to ambient temperature and low emissivity can be expected from $VO_2$ films deposited onto FTO glasses. In this study, FTO glasses were applied for the deposition of $VO_2$ thin films by pulsed DC magnetron sputtering. $VO_2$ thin films were also deposited on a Pyrex substrate for comparison. To decrease the phase transition temperature of $VO_2$, tungsten-doped $VO_2$ films were also deposited onto FTO glasses. The visible transmittance of $VO_2$/FTO was higher than that of $VO_2$/pyrex due to the increased crystallinity of the $VO_2$ thin film deposited on FTO and decreased interface reflection. Although the solar transmittance modulation of $VO_2$/FTO was lower than that of $VO_2$/pyrex, room temperature solar transmittance of $VO_2$/FTO was lower than that of $VO_2$/pyrex, which is advantageous for reflecting solar heat energy in summer.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.726-728
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• 2013

Optoelectronic arc discharge sensor was used to detect arc discharge inside power distribution panel. Arc discharge is fatal to power system once it begins, thus preventive detection is necessary before power failure occurs. Optoelectronic detection method was used to avoid direct electrical contact to power apparatus inside power distribution panel. 180 degree detection angle and detection range far exceeding 6m, which was sufficient for monitoring purpose, was achieved using the photodiode having $7.5mm^2$ of active surface area and flash source with $0.4cal/cm^2$ energy density, which is equivalent to 1.9J with $2.16cm^2$ emitting area. The response speed of arc discharge sensor was measured to be below 1 msec. The above optoelectronic arc discharge sensor was measured to be sensitive enough to detect 0.94 pC charge.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.185-185
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• 2011

ZnTe semiconductor is very attractive materials for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. Another application to photovoltaics proved that ZnTe is useful for the production of high-efficiency multi-junction solar cells [2,3]. By using the pulse laser deposition system, ZnTe thin films were deposited on ZnO thin layer, which is grown on (0001) Al2O3substrates. To produce the plasma plume from an ablated ZnO and ZnTe target, a pulsed (10 Hz) YGA:Nd laser with energy density of 95 mJ/$cm^2$ and wavelength of 266 nm by a nonlinear fourth harmonic generator was used. The laser spot focused on the surface of the ZnO and ZnTe target by using an optical lens was approximately 1 mm2. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen gas flow was controlled around 3 sccm by using a mass flow controller system. During the ZnTe deposition, the substrate temperature was $400^{\circ}C$ and the ambient gas pressure was $10^{-2}$ Torr. The structural properties of the samples were analyzed by XRD measurement. The optical properties were investigated by using the photoluminescence spectra obtained with a 325 nm wavelength He-Cd laser. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system.

• Transactions of the Korean Society of Automotive Engineers
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• v.16 no.5
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• pp.1-7
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• 2008

A study of new materials that are light-weight, high in strength has become vital to the machinery of auto industries. But then, there are a lot of problems with developing such materials that require expensive tools, and a great deal of time and effort. Therefore, the improvement of fatigue strength and fatigue life are mainly focused on by adopting residual stress. And Influence of corrosive condition for corrosion fatigue crack was investigated, after immersing in 3.5%NaCl, $10%HNO_3$+3.5%HF, $6%FeCl_3$. The immersion period was performed for 365days. The compressive residual stress was imposed on the surface according to each shot velocity based on shot peening, which is the method of improving fatigue life and strength. Fatigue life shows more improvement in the shot peened material than in the un peened material in corrosion conditions. The threshold stress intensity factor range was decreased in corrosion environments over ambient. Compressive residual stress of surface on the Shot-peen processed operate resistance force of fatigue crack propagation. The fatigue crack growth rate of the Shot-peened material was lower than that of the un peened material. Also m, fatigue crack growth exponent and number of cycle of the shot peened material was higher than that of the un peened material. That is concluded from effect of da/dN.

• Applied Chemistry for Engineering
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• v.25 no.4
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• pp.414-417
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• 2014

LED scraps consisting of highly crystalline GaN and their leaching behavior are comprehensively investigated for hydro-metallurgical recovery of rare metals. Highly stable GaN renders the leaching of the LED scraps extremely difficult in ordinary acidic and basic media. More favorable state can be obtained by way of high temperature solid-gas reaction of GaN-$Na_2CO_3$ powder mixture, ball-milled thoroughly at room temperature and subsequently oxidized under ambient air environment at $1000-1200^{\circ}C$ in a horizontal tube furnace, where GaN was effectively oxidized into gallium oxides. Stoichiometry analysis reveals that GaN is completely transformed into gallium oxides with Ga contents of ~73 wt%. Accordingly, the oxidized powder can be suitably leached to ~96% efficiency in a boiling 4 M HCl solution, experimentally confirming the feasibility of Ga recycling system development.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.110.1-110.1
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• 2012

Recently, advances in ZnO based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). However, the electrical performances of oxide semiconductors are significantly affected by interactions with the ambient atmosphere. Jeong et al. reported that the channel of the IGZO-TFT is very sensitive to water vapor adsorption. Thus, water vapor passivation layers are necessary for long-term current stability in the operation of the oxide-based TFTs. In the present work, $Al_2O_3$ and $TiO_2$ thin films were deposited on poly ether sulfon (PES) and $SnO_x$-based TFTs by electron cyclotron resonance atomic layer deposition (ECR-ALD). And enhancing the WVTR (water vapor transmission rate) characteristics, barrier layer structure was modified to $Al_2O_3/TiO_2$ layered structure. For example, $Al_2O_3$, $TiO_2$ single layer, $Al_2O_3/TiO_2$ double layer and $Al_2O_3/TiO_2/Al_2O_3/TiO_2$ multilayer were studied for enhancement of water vapor barrier properties. After thin film water vapor barrier deposited on PES substrate and $SnO_x$-based TFT, thin film permeation characteristics were three orders of magnitude smaller than that without water vapor barrier layer of PES substrate, stability of $SnO_x$-based TFT devices were significantly improved. Therefore, the results indicate that $Al_2O_3/TiO_2$ water vapor barrier layers are highly proper for use as a passivation layer in $SnO_x$-based TFT devices.

• Polymer(Korea)
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• v.27 no.6
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• pp.549-554
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• 2003

Emeraldine salt of polyaniline-dodecylbenzenesulfdnic acid (PANI-DBSA) in organic solvents such as toluene and xylene was obtained by a direct one-step emulsion polymerization technique. When the molar ratio of DBSA to aniline monomer was 1.5:1, its solubility and electric property showed a maximum value and then the solid contents of PANI-DBSA was 8 wt% in toluene. The cast film of PANI-DBSA with no binder was obtained on glass or plastic substrates under ambient conditions. PANI solution can be also easily blended with polyurethane and polystyrene polymers in toluene. Improved electrical performance up to 5 S/cm was achieved with good light-transmittance up to 70% at 500 m thickness. They also showed more homogeneous morphology than that prepared with PANI-DBSA kom aqueous dispersion polymerization. The partially dispersed PANI-DBSA showed particles sizes of 50-400 m in organic solvents and their XRD pattern were observed from the powder sample.

• Journal of the Mineralogical Society of Korea
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• v.21 no.4
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• pp.415-423
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• 2008

Earth outer core is composed of iron mainly with some diluent elements, which account for the observed ca. 10% density deficit compared to the pure iron. Among candidates as the light diluents, hydrogen and oxygen were selected, and the thermodynamic stability of the following reaction was calculated; hematite + hydrogen $\to$ goethite + iron. At ambient conditions, Gibb's free energy of this reaction is 12.62 kJ/mol. On increasing pressure at room temperature, it decreases to zero at 0.068 GPa. This energy decreases at constant rate down to 200 GPa, which shows -208.26 kJ/mol at that pressure. From these results, this chemical reaction prefers the reduction environment forming the iron element and iron oxyhydroxide, so possible presence of iron oxyhydroxide with iron at proto-core can not be ruled out.