• Journal of the Korean Electrochemical Society
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• v.11 no.3
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• pp.184-189
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• 2008

Inhibitive effects of chromate, phosphate, sulfate, and borate on chloride pitting corrosion of Al have been investigated using cyclic voltammetry. During the anodic oxide growth, the critical concentration of chloride for pit initiation decreased in the order: chromate > phosphate > sulfate > borate, and the maximum pitting current density increases in the reverse order: chromate < phosphate < sulfate < borate. The decreasing pitting current density was observed in the successive polarization cycles, which was attributed to the aging of Al oxides and field relaxation at oxide/solution interface.

• Particle and aerosol research
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• v.9 no.3
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• pp.173-185
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• 2013

Oxidations of metal generate large quantity of thermal and light energies but no toxic pollutants, so that metals with high calorific values, such as beryllium, boron, aluminum, magnesium, and lithium, are possible to be used as clean fuels instead of fossil fuels. However, they are so explosive due to very high oxidation rates that they should be stabilized by their surface passivation with oxides, organics and inorganics. For reasonable use of energetic metal particles as solid fuel, therefore, some detail information, such as thermal properties, preparation and passivation methods, and application area, of the energetic metals is introduced in this manuscript.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.9
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• pp.378-382
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• 2003

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCI (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure md the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures ($\leq$$300^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.391-394
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• 2002

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCl (0.5%) to examine the electrical and surface morphology Properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9 mTorr) and high substrate temperatures ($\leq$30$0^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• Journal of the Korean Ceramic Society
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• v.23 no.6
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• pp.71-75
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• 1986

The forming reaction processes of magnesium aluminate spinel by a thermal decomposition of sulfate hydrate were studied with DTA, TG. SEM and X-ray powder diffraction methods. The hydrous salt composed of the mixture of the two compounds of $MgSO_4$ $6H_2O$ and ${AL_2}({SO_4})_17H_2O_3$ in which both sulfates were crystalline. On heating the hydrous slat the crystalline magnesium and aluminum sulfate anhydride to amorphous alumina magnesium sulfate anhydride decomposed to amorphous magnesia and these amorphous oxides reacted completely each other to form a spinel at $1000^{\circ}C$ The apparent activation energy of forming reaction of spinel was 36.5 kcal/mole($900^{\circ}C$~$1000^{\circ}C$) The crystallite size of spinel obtained at $1000^{\circ}C$ after 1 h was 380$\AA$.

• Transactions of Materials Processing
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• v.8 no.3
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• pp.327-327
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• 1999

The oxidation behavior of 60%Cu-40%Zn brass haying small amounts of Zr, Cr, Mg, Al, and Si was studied between 873 and 1043 K in air. The alloying element of Mg was harmful, while other alloying elements were beneficial to oxidation resistance. Particularly, the simultaneous addition of Al and Si decreased the oxidation rate drastically. During oxidation, Zr formed ZrO₂, Cr formed CuCr₂O₄, Mg formed MgO, Al formed A1₂CuO₄, and Si formed amorphous SiO₂. These oxides were incorporated in the oxide scale composed predominantly of ZnO. The oxide scales formed on all the tested alloyswere prone to cracking, wrinkling, and spallation.

• Journal of the Korean institute of surface engineering
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• v.26 no.2
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• pp.82-86
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• 1993

An attempt was made to reduce directly Nd2O3 in a cryolited based fluoride bath. Neodymium metal was electrodeposited on the iron cathode to produce the Fe-Nd eutectic alloy in a liquid state at 90$0^{\circ}C$. Graphite was adopted for the anode and pure iron for the cathode. Electrolyte was composed of Na3AlF6 50wt.%. AlF3 34wt.% and Nd2O3 16wt.%. Analysis of typical alloy product showed Al 63.4wt.% Fe 26.9wt.% and Nd 7.0 wt.% The enrichment of neodymium in the alloy couldn't be obtained because aluminum codeposited with ne-odydmium. Experimental results proved that the cryolited based electrolyte was unstable for the electrolysis of rare earth oxides even though their prominent solubilities.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.106-107
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• 2007

We fabricated anodic aluminium oxides (AAO) on Si and sapphire substrates from the electrochemical reactions of thin AI films in an aqueous solution of oxalic acid. The thin AI films have deposited on Si and Sapphire substructure by using E-beam evaporation and thermal evaporation, respectively. The formation of AAO structures has investigated from FE-SEM measurement image and showed randomly distributed phase of nanoholes instead of the periodic lattice of photonic crystals. The AAO structure on sapphire shows the double layers of nanoholes.

• Applied Chemistry for Engineering
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• v.19 no.3
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• pp.249-258
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• 2008

Nanoporous alumina with highly ordered pore arrays, which is prepared based on electrochemical anodization under the controlled conditions, has attracted great attention due to the variety of its applications. In case of porous alumina, the manipulation of nanoporous structures under different electrochemical conditions and their formation mechanisms have been studied for a long time. Recently, its principles have been applied to other valve metals. Especially, there have been a big success in the preparation of titania nanotubes via the anodization of titanium. In this paper, we review the anodization of aluminum and recent trends in anodization of Ti and other valve metals based on the principles of aluminum anodization.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.426.1-426.1
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• 2016

We report high work function Aluminum doped zinc oxide (AZO) films as insertion layer as a function of O2 flow rate between transparent conducting oxides (TCO) and hydrogenated amorphous silicon oxide (a-SiOx:H) layer to improve open circuit voltage (Voc) and fill factor (FF) for high efficiency thin film solar cell. However, amorphous silicon (a-Si:H) solar cells exhibit poor fill factors due to a Schottky barrier like impedance at the interface between a-SiOx:H windows and TCO. The impedance is caused by an increasing mismatch between the work function of TCO and that of p-type a-SiOx:H. In this study, we report on the silicon thin film solar cell by using as insertion layer of O2 reactive AZO films between TCO and p-type a-SiOx:H. Significant efficiency enhancement was demonstrated by using high work-function layers (4.95 eV at O2=2 sccm) for engineering the work function at the key interfaces to raise FF as well as Voc. Therefore, we can be obtained the conversion efficiency of 7 % at 13mA/cm2 of the current density (Jsc) and 63.35 % of FF.