• Journal of Powder Materials
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• v.11 no.4
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• pp.308-313
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• 2004

An experimental study on the combustion of superfine aluminum powders (average particle diameter, a$_{s}$: ∼0.1 ${\mu}{\textrm}{m}$) in air is reported. The formation of aluminum nitride during the combustion of aluminum in air and the influence of the combustion scenario on the structures and compositions of the final products are in the focus of this study. The experiments were conducted in an air (pressure: 1 atm). Superfine aluminum powders were produced by the wire electrical explosion method. Such superfine aluminum powder is stable in air but once ignited it can burn in a self-sustaining way due to its low bulk: density (∼0.1 g/㎤) and a low thermal conductivity. During combustion, the temperature and radiation were measured and the actual burning process was recorded by a video camera. Scanning electron microscopy (SEM), X-ray diffraction (XRD) and chemical analysis were performed on the both initial powders and final products. It was found that the powders, ignited by local heating, burned in a two-stage self-propagating regime. The products of the first stage consisted of unreacted aluminum (-70 mass %) and amorphous oxides with traces of AlN. After the second stage the AlN content exceeded 50 mass % and the residual Al content decreased to ∼10 mass %. A qualitative discussion is given on the kinetic limitation for AlN oxidation due to rapid condensation and encapsulation of gaseous AlN.N.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.220-223
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• 1996

Mechanical properties of Plasma-Enhanced Chemical Vapor Deposited (PECVD) silicon nitride thin film was studied to determine the feasibility of the film as a passivation layer over the aluminum bonding areas of integrated circuit chips. Ultimate strain of the films in thicknesses of about 5 k${\AA}$ was measured using four-point bending method. The ultimate strain of these films was constant at about 0.2% regardless of residual stress. Intrinsic and residual stresses of these films were measured and compared with thermal shock and cycling test results. Comparison of the results showed that more tensile films were more susceptible to crack- induced failure.

• Transactions of Materials Processing
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• v.25 no.5
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• pp.313-318
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• 2016

The plasma vapor coatings on two kinds of die steels have been carried out in order to identify the most optimized conditions. When TiN or TiAlN coatings were carried out on the substrates, the coating layer thicknesses were not significantly changed, and the optimized coating thickness was identified as ~ 5 μm. When the optimized coating conditions and stress analysis were applied to the primary piston dies for fabrication of aluminum cylinders, an extended life time of the die was observed. The methodology for extending the life time of dies was discussed in terms of microstructures and stress analysis.

• Ceramist
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• v.9 no.6
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• pp.7-11
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• 2006

The status of structural ceramics in Japan is presented. Use of ceramics for structural components had been limited due to their brittleness, and the successful application was wear resistant parts such as thread guides and ceramic cutting tools up to around 1980. Since then, considerable work has been done for applying ceramics to mechanical parts, and automotive components made of silicon nitride were developed and commercialized in 1980s. Unfortunately, the application of silicon nitride to automotive engines is not so popular in these days. Instead, a variety of structural ceramics such as alumina, silicon carbide and zirconia have recently extended the market, and the expanded application includes vacuum process parts for manufacturing semiconductor and liquid crystal devices, refractory tubes for casting aluminum alloy, and dies for optical lens forming. In addition, cordierite honeycombs and diesel particulate filters are widely used in automobiles. In the present review, the recent application of structural ceramics to automobiles and industries in Japan is summarized.

• Journal of the Korean Ceramic Society
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• v.36 no.8
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• pp.799-804
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• 1999

Composites of SiC-Si3N4 consisted of uniformly distributed elongated $\beta$-Si3N4 grains and equiaxed $\beta$-SiC grains were fabricated with $\beta$-SiC,. $\alpha$-Si3N4 Al2O3 and Y2O3 powders. By hot-pressing and subsequent annelaing elongated $\beta$-Si3N4 grains were grown via$\alpha$longrightarrow$\beta$ phase transformation and equiaxed $\beta$-Si3N4 composites increased with increasing the Si3N4 content owing to the reduced defect size and enhanced crack deflection by elongated $\beta$-Si3N4 grains and the grain boundary strengthening by nitrogen incorporation. Typical flexural strength and fracture toughness of SiC-40 wt% Si3N4 composites were 783 MPa and 4.2 MPa.m1/2 respectively.

• 한국기계연구소 소보
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• s.20
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• pp.79-87
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• 1990

Advanced ceramics have some excellent properties as the material for the mechanical component. It is, however, very difficult to grind ceramics with high efficiency because of their high strength, hardness and brittleness. Thus it is required also by a strong boom of demands for development of Machinable ceramics with high machinability in the most of industries. In present research, experiments are carried out to compare the machinability of sample Machinable ceramics. A $\ell$N(Aluminum Nitride) with additives of BN(Boron Nitride), yttrium. CaO are turned with cut-off tool type tungsten carbide bite using conventional turning machine.

• Bulletin of the Korean Chemical Society
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• v.15 no.1
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• pp.28-33
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• 1994

The laser-assisted chemical vapor deposition (LCVD) is described, by which the growth of single-phase GaN epitaxy is achieved at lower temperatures. Trimethylgallium (TMG) and ammonia are used as source gases to deposit the epitaxial films of GaN under the irradiation of ArF excimer laser (193 nm). The as-grown deposits are obtained on c-face sapphire surface near 700$^{\circ}$C, which is substantially reduced, relative to the temperatures in conventional thermolytic processes. To overcome the lattice mismatch between c-face sapphire and GaN ad-layer, aluminum nitride(AlN) is predeposited as buffer layer prior to the deposition of GaN. The gas phase interaction is monitored by means of quadrupole mass analyzer (QMA). The stoichiometric deposition is ascertained by X-ray photoelectron spectroscopy (XPS). The GaN deposits thus obtained are characterized by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and van der Pauw method.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.55-60
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• 2017

The supercritical $CO_2$ (sc-$CO_2$) mixture and the sc-$CO_2$-based Photoresist(PR) stripping(SCPS) process were applied to the removal of the post etch/ash PR residue on aluminum patterned wafers and the results were observed by scanning of electron microscope(SEM). In the case of MDII wafers, the carbonized PR was able to be effectively removed without pre-stripping by oxygen plasma ashing by using sc-$CO_2$ mixture containing the optimum formulated additives at the proper pressure and temperature, and the same result was also able to be obtained in the case of HDII wafer. It was found that the efficiency of SCPS of ion implanted wafer improved as the temperature of SCPS was high, so a very large amount of MEA in the sc-$CO_2$ mixture could be reduced if the temperature could be increased at condition that a process permits, and the ion implanted photoresist(IIP) on the wafer was able to be removed completely without pre-treatment of plasma ashing by using the only 1 step SCPS process. By using SCPS process, PR polymers formed on sidewalls of metal conductive layers such as aluminum films, titanium and titanium nitride films by dry etching and ashing processes were removed effectively with the minimization of the corrosion of the metal conductive layers.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.188.1-188.1
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• 2014

Aluminum is widely used as a material for electrode on silicon based devices. Especially, aluminum films are used as backside and front-side electrodes in silicon quantum dot (QD) solar cells. In this point, the diffusion of aluminum is very important for the enhancement of power conversion efficiency by improvement of contact property. Aluminum was deposited on a Si (100) wafer and a Si QD layer by ion beam sputter system with a DC ion gun. The Si QD layer was fabricated by $1100^{\circ}C$ annealing of the $SiO_2/SiO_1$ multilayer film grown by ion beam sputtering deposition. Cs ion beam with a low energy and a grazing incidence angle was used in SIMS depth profiling analysis to obtain high depth resolution. Diffusion behavior of aluminum in the Al/Si and Al/Si QD interfaces was investigated by secondary ion mass spectrometry (SIMS) as a function of heat treatment temperature. It was found that aluminum is diffused into Si substrate at $450^{\circ}C$. In this presentation, the effect of heat treatment temperature and Si nitride diffusion barrier on the diffusion of Al will be discussed.

• Korean Journal of Materials Research
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• v.22 no.9
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• pp.445-449
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• 2012

We investigate the effects of redox reaction on preparation of high purity ${\alpha}$-alumina from selectively ground aluminum dross. Preparation procedure of the ${\alpha}$-alumina from the aluminum dross has four steps: i) selective crushing and grinding, ii) leaching process, iii) redox reaction, and iv) precipitation reaction under controlled pH. Aluminum dross supplied from a smelter was ground to separate metallic aluminum. After the separation, the recovered particles were treated with hydrochloric acid(HCl) to leach aluminum as aluminum chloride solution. Then, the aluminum chloride solution was applied to a redox reaction with hydrogen peroxide($H_2O_2$). The pH value of the solution was controlled by addition of ammonia to obtain aluminum hydroxide and to remove other impurities. Then, the obtained aluminum hydroxide was dried at $60^{\circ}C$ and heat-treated at $1300^{\circ}C$ to form ${\alpha}$-alumina. Aluminum dross was found to contain a complex mixture of aluminum metal, aluminum oxide, aluminum nitride, and spinel compounds. Regardless of introduction of the redox reaction, both of the sintered products are composed mainly of ${\alpha}$-alumina. There were fewer impurities in the solution subject to the redox reaction than there were in the solution that was not subject to the redox reaction. The impurities were precipitated by pH control with ammonia solution, and then removed. We can obtain aluminum hydroxide with high purity through control of pH after the redox reaction. Thus, pH control brings a synthesis of ${\alpha}$-alumina with fewer impurities after the redox reaction. Consequently, high purity ${\alpha}$-alumina from aluminum dross can be fabricated through the process by redox reaction.