• 제목/요약/키워드: Alumina sol

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졸-겔법을 이용한 γ-Al2O3 합성 시 PVA와 HNO3 첨가에 따른 입자크기 제어 (Particle Size Control by the Addition of PVA and HNO3 in γ-Al2O3 Synthesis Using by Sol-Gel Method)

  • 엄명헌;김나은;하범용
    • 한국산학기술학회논문지
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    • 제20권11호
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    • pp.537-543
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    • 2019
  • 세라믹 재료 중 알루미나(Al2O3)는 산업에서 널리 사용되는 세라믹 재료로서 최근의 기술발전에 따라 재료 크기가 작아지고 이에 따른 특성이 다양하여 그 중요성이 더해 가고 있다. 본 연구에서는 다양한 알루미늄 알콕사이드 중 Aluminum isopropoxide(AIP)를 출발 원료물질로 하여 졸-겔(Sol-Gel)법에 의해 가수분해 및 해교과정을 거쳐 boehmite 졸을 제조하고 이후 건조 및 하소시켜 γ-Al2O3를 제조하였다. 이러한 제조 과정 중 입자의 응집현상을 방지하기 위해 9,000 ~ 10,000, 31,000 ~ 50,000, 89,000 ~ 98,000, 130,000의 분자량을 갖는 4종류의 PVA(Polyvinyl alcohol)를 첨가하고 3종류 질산(0.1, 0.3, 0.5 몰비)을 첨가하여 입자에 미치는 영향을 확인하고자 하였다. 제조된 γ-Al2O3는 X선 회절분석기(XRD), X선 형광분석기(XRF), 입도분석기(PSA), 전계방사 주사전자현미경(FE-SEM) 등의 기기분석을 통하여 결정구조 및 조성, 입자크기, 그리고 입자형상을 확인하였다. 그 결과, 약 98.2 %의 순도를 갖는 γ-Al2O3가 합성되었으며 첨가되는 질산의 첨가비가 높을수록, 그리고 PVA 분자량이 클수록 입자크기가 감소하고 균일성이 높아지는 것을 확인할 수 있었다. 이러한 결과로부터, PVA와 질산의 첨가비 조절에 따라 γ-Al2O3의 제조공정 중 입자크기 제어가 가능할 것으로 사료된다.

기체분리용 세라믹 복합분리막의 개발: III. 기체투과 모델에 의한 막의 특성 규명 (Development of Ceramic Composite Membranes for Gas Separation: III. Examination of Membrane Characteristics by the Gas Permeation Model)

  • 현상훈;윤성필;강범석
    • 한국세라믹학회지
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    • 제29권11호
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    • pp.905-911
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    • 1992
  • Model equations for the gas permeation through a ceramic composite membrane were derived for examining the existence of crack, the reproducibility, and the microstructural properties of composite membranes. From the results of analyzing the nitrogen permeability data through alumina-tube supported TiO2 and SiO2 composite membranes, the extent of cracking, and the formation and structure of membrane top-layers were modelled. It was proved that the crack-free and reproducible composite membranes could be easily prepared only by the pore-filled coating within pores of the support in the sol-gel coating process.

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알루미늄의 진공증발과 열산화에 의한 알루미나 복합분리막의 제조 및 특성분석 (Synthesis and Characterization of Alumina Composite Membrane by Al Evaporation and Thermal Oxidation)

  • 이동호;최두진;현상훈
    • 한국세라믹학회지
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    • 제32권3호
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    • pp.349-358
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    • 1995
  • The ceramic composite membrane was synthesized by thermal oxidation after evaporation of Al on the support prepared by slip casting process. Oxidation was performed at $700^{\circ}C$ and 80$0^{\circ}C$ under dry oxygen atmosphere. It was considered as optimum oxidation condition that the membrane showed a knudsen behaviro. A further oxidation resulted in an increase of gas permeability because top layer became densified. Then, a multi-layered composite membrane was synthesized through a sol-gel method, evaporation and thermal oxidation of Al coating processes. While the membrane was thermally stable up to 80$0^{\circ}C$, gas permeability was rapidly decreased even at a slight amount of deposition of Al.

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다층 PZT(20/80)후막과 PZT(80/20)박막의 소결온도에 따른 전기적 특성 (Electronic properties of PZT(20/80) thick film and PZT(80/20) thin film multilayer with variation of sintering temperature)

  • 노현지;이성갑;박상만;배선기
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 D
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    • pp.2209-2210
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    • 2006
  • In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coaled on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field wore 16.48 ${\mu}C/cm^2$ and 35.48kV/cm, respectively.

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다층 PZT(20/80)후막과 PZT(80/20)박막의 소결온도에 따른 전기적 특성 (Electronic properties of PZT(20/80) thick film and PZT(80/20) thin film multilayer with variation of sintering temperature)

  • 노현지;이성갑;박상만;배선기
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 A
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    • pp.577-578
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    • 2006
  • In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at 650f showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were 16.48${\mu}C/cm^2$ and 35.48kV/cm, respectively.

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Preparation of Highly Oriented ZnO Thin Films Prepared by Sol-Gel Method

  • Cheol Jeong;Hwang, Kyu-Seog;Moon, Jong-Ha;Kim, Byung-Hoon
    • The Korean Journal of Ceramics
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    • 제3권4호
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    • pp.249-252
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    • 1997
  • Highly oriented ZnO thin films were fabricated by dip-coating technique using zinc acetate 2-methoxyethanol 2-aminoethanol solution as starting materials, and effects of substrates on the film's orientation were investigated. Product films were obtained by prefiring at 300, 400, 500 and 550℃ for 10 min, followed by final heat-treatment at the same temperatures as prefiring for 1h. c-axis oriented films on glass substrates were prepared by heat treatment of prefiring films at 300-550℃, while films on alumina showed polycrystalline structure. Films with c-axis orientation exhibited lower specific resistivities than those of polycrystalline films with partial crack and pore.

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Electrical Properties of $BaTiO_3$ System Thick Films Prepared by Screen-Printing Method

  • Kang, Jeong-Min;Cho, Hyun-Moo;Lee, Sung-Gap;Park, Sang-Man;Lee, Young-Hie
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.685-688
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    • 2003
  • [ $(Ba,Sr,Ca)TiO_3$ ] powders, prepared by the sol-gel method, were mixed with an organic vehicle and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. The grain size decreased with increasing amounts of $MnO_2$, and the BSCT(50/40/10) thick film doped with 1wt% $MnO_2$ showed a value of 6.5mm. The thickness of thick films by four-cycle on printing/drying was approximately 100mm. The relative dielectric constant, dielectric loss and tunability of the BSCT(S0/40/10) thick films doped with 1.0wt% $MnO_2$ were 1296, 0.61% and 11.18%, respectively.

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Microwave Dielectric Properties of BSCT Thick Films with Addition of $Nb_2O_5$

  • Kang, Jeong-Min;Cho, Hyun-Moo;Lee, Sung-Gap;Park, Sang-Man;Lee, Young-Hie
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.632-635
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    • 2003
  • [ $(Ba,Sr,Ca)TiO_3$ ] powders, prepared by the sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. The dielectric properties were investigated for various composition ratio and $Nb_2O_5$ doping contents. All the BSCT thick films, sintered at $1420^{\circ}C$, showed the typical XRD patterns of a perovskite polycrystalline structure. The Curie temperature and the relative dielectric constant decreased with increasing Ca content and $Nb_2O_5$ doping amount. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) thick films doped with 1.0wt% $Nb_2O_5$ were 1410, 0.65% and 17.29% respectively.

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Dielectric Properties of Amorphous and Composite Alkoxi-derived Alumina Thin Films

  • N., Korobova;Soh, Dea-Wha
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.772-775
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    • 2003
  • The development of new improved type of dielectric materials on the conception of multiphase structure has been carried out in this paper. Metal alkoxides solutions were used for application of thin film by electrophoretic deposition technique. We succeeded in preparation of amorphous and composite dielectric films from Al alkoxides. Specific features of the preparation technique were considered. Microstructure of the films was examined as well as their dielectric properties. TEM analyses reveals that films deposited from aging sols and heat-treated at temperatures as low as $400^{\circ}C$ contain small whiskers of ${\delta}-Al_2O_3$.

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저온에서 (Ba,Sr)$TiO_3$ 박막의 UV를 이용한 RTP에 관한 연구 (Low temperature UV-assisted rapid thermal processing of (Ba,Sr)$TiO_3$ thin films)

  • 조광환;강종윤;윤석진;이영백
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.234-234
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    • 2008
  • Chemically homogeneous $Ba_{0.6}Sr_{0.4}TiO_3$ (BST) sols were synthesized using barium acetate, strontium acetate, and titanium isoproxide as starting materials. BST thin films of thickness 340 nm were deposited on Pt/$TiO_2/SiO_2$/Si and alumina substrates using spin coating method. The technique used for the processing of these films was Ultraviolet (UV) sol-gel photoannealing, using phto-sensitivity precursor solutions and UV-assisted rapid thermal processing(UV-RTP). The crystallization behaviour of the BST sols and thin films was studied by differential thermal analysis (DTA) and X-ray diffraction (XRD). Variation of permittivity and dielectric loss were measured in LCR-meter, model HP 4394A.

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