• Bulletin of the Korean Chemical Society
• /
• 제27권8호
• /
• pp.1235-1238
• /
• 2006

• Bulletin of the Korean Chemical Society
• /
• 제32권5호
• /
• pp.1579-1582
• /
• 2011

Alumina particles wrapped in few-layer graphene sheets were prepared by calcining aluminum nitride powders under a mixed gas flow of carbon monoxide and argon. The graphene sheets were characterized by powder X-ray diffraction (XRD), Raman spectroscopy, electron energy loss spectroscopy, and high-resolution transmission electron microscopy. The few-layer graphene sheets, which wrapped around the alumina particles, did not exhibit any diffraction peaks in the XRD patterns but did show three characteristic bands (D, G, and 2D bands) in the Raman spectra. The dye-sensitized solar cell (DSSC) with the alumina particles wrapped in few-layer graphene sheets exhibited significantly improved overall energy-conversion efficiency, compared to conventional DSSC, due to longer electron lifetime.

• 한국세라믹학회지
• /
• 제40권9호
• /
• pp.832-836
• /
• 2003

Multi-layer ceramic composites were prepared by tape casting followed by hot pressing using silicon nitride layer with silicon nitride whiskers, silicon nitride layer with silicon carbide particles and boron nitride-alumina layer. The whiskers were aligned during the casting. As the whisker content of the silicon nitride layer was increased up to 10 wt％, the flexural strength of the multi-layer composite was increased. However, further increase of the whisker content in the layer resulted in a rapid decrease of the strength of the composite. The results suggest that the strength of multi-layer ceramic composite showing non-catastrophic failure behavior can be significantly improved by incorporating the aligned whiskers in the layers.

• 대한화학회지
• /
• 제34권4호
• /
• pp.370-376
• /
• 1990

질화 알루미늄을 AlO(OH)로부터 가장 낮은 온도에서 얻은 γ- alumina와 무수 염화 알루미늄 그리고 금속 알루미늄 분말을 출발물질로 하여 합성하는 연구를 하였다. 특히 반응온도에 주목하고 질화 알루미늄을 합성하였고 그 반응 조건들을 결정하였으며 그 결과에 대하여 논의하였다. 금속 알루미늄과 질소 가스의 반응은 비교적 낮은 온도에서 진행 되었고, 이 반응에 대한 반응 파라미터를 속도론적으로 연구하였다.

• 한국세라믹학회지
• /
• 제51권6호
• /
• pp.544-548
• /
• 2014

Aluminum nitride was synthesized using a carbothermal method from mesoporous alumina having a high surface area (> $1,000m^2/g$) as an aluminum source and CNTs (carbon nano tubes) as a carbon source. In this case the mesoporous alumina was used as the starting material instead of ${\alpha}-Al_2O_3$ with the expectation that the mesopores in mesoporous alumina act as channels for N2 gas and elimination of CO generated as by-product. It is also expected that the synthetic temperature should be lower compared to the use of ${\alpha}-Al_2O_3$ as a starting material due to its high surface area. The crystallinity of the produced aluminum nitride was studied by XRD and FT-IR, and the microstructure was investigated by FE-SEM. Also the purity of the aluminum nitride was analyzed through N/O determinator and ICP analysis.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1993년도 추계 학술발표 강연 및 논문 개요집
• /
• pp.78-79
• /
• 1993

• 한국세라믹학회지
• /
• 제39권3호
• /
• pp.272-277
• /
• 2002

전구체로 ($NH_4)[Al(ethylenediaminetetraacetate)]{\cdot}2H_2O$ 착물을 이용한 수정된 열탄소환원질화법으로 질화알루미늄(AlN) 분말과 휘스커를 합성하였다. 이 분말은 질소분위기에서 별도의 환원용 탄소를 혼합하지 않고 1200$^{\circ}$C에서 1500$^{\circ}$C까지의 온도에서 하소시킨 다름 잔류탄소를 태워 버림으로써 얻어졌다. 이 질화과정을 Al-27 마법각 스핀 핵자기공명, 적외선 분광법 및 X-선 회절법으로 연구했다. 전구체 착물은 열분해되어 ${\rho}$-알루미나와 ${\gamma}$-알루미나로 되었다가 ${\gamma}-{\alpha}$알루미나 전이없이 AlN으로 바뀌었다. ${\gamma}$-알루미나가 AlN으로 바뀌면서 분말의 형상이 유지되는 것으로 보아 이 변환과정에서의 중간체는 알루미늄이나 aluminum suboxides와 같은 기체상이 아니고, 고체상의 $AlO_xN_y$임을 알 수 있다. (0001) 사파이어를 이용하면 AlN 휘스커를 합성할 수 있다.

• 한국전기전자재료학회논문지
• /
• 제16권12호
• /
• pp.1103-1109
• /
• 2003

Crystalline carbon nitride films have been deposited by RF reactive magnetron sputtering system with negative DC bias. The carbon nitride films deposited on various substrates showed ${\alpha}$- C$_3$N$_4$,${\beta}$-C$_3$N$_4$ and lonsdaleite structures through XRD and FTIR We can find the grain growth of hexagonal structure from SEMI photographs, which is coincident with the theoretical carbon nitride unit cell. When nitrogen gas ratio is 70 % and RF power is 200 W, the growth rate of carbon nitride film on quartz substrate is about 2.1 $\mu\textrm{m}$/hr.

• 한국세라믹학회지
• /
• 제33권3호
• /
• pp.269-276
• /
• 1996

The effect of sintering aids on the sinterability for silcion nitride has been studied by hundreds workers. However the effect of sintering aids on the machinability as the own trobles which is the major barrier for the field applications of the ceramic components has not been fully studied. in this study the contents of Al2O3 and Y2O3 in silicon nitride were varied from 0 to 8 wt% respectively. The physical and mechanical properties of the silcion nitride were measured. The optimal microstructure of silicon nitride balls with the excellent machinability by adding with various contents of sintering aids was studied by MGF(magnetic-fluid grinding)technique. An attempt to figure out how the mechanical properties influence the machinability of silicon-nitride ball was made.

• 한국세라믹학회지
• /
• 제39권7호
• /
• pp.622-627
• /
• 2002

Multi-layer composites consisting of silicon nitride, silicon nitride-silicon carbide and boron nitride-alumina layers were prepared fly stacking the corresponding ceramic tapes. The composites demonstrated self-diagnostic capability and non-catastrophic failure behavior. The composites consisting of many thin layers exhibited high strength and stepwise increase of the electrical resistance during the flexure test. The strength of the composite with too thick silicon nitride layers was low and the electrical resistance was abruptly increased to the detection limit of the digital multi-meter during the test. An extensive crack branching was observed in the weak (BN + Al$_2$O$_3$)layer.