• Title/Summary/Keyword: Alumina nitride

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The Preparation of Alumina Particles Wrapped in Few-layer Graphene Sheets and Their Application to Dye-sensitized Solar Cells

  • Ahn, Kwang-Soon;Seo, Sang-Won;Park, Jeong-Hyun;Min, Bong-Ki;Jung, Woo-Sik
    • Bulletin of the Korean Chemical Society
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    • v.32 no.5
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    • pp.1579-1582
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    • 2011
  • Alumina particles wrapped in few-layer graphene sheets were prepared by calcining aluminum nitride powders under a mixed gas flow of carbon monoxide and argon. The graphene sheets were characterized by powder X-ray diffraction (XRD), Raman spectroscopy, electron energy loss spectroscopy, and high-resolution transmission electron microscopy. The few-layer graphene sheets, which wrapped around the alumina particles, did not exhibit any diffraction peaks in the XRD patterns but did show three characteristic bands (D, G, and 2D bands) in the Raman spectra. The dye-sensitized solar cell (DSSC) with the alumina particles wrapped in few-layer graphene sheets exhibited significantly improved overall energy-conversion efficiency, compared to conventional DSSC, due to longer electron lifetime.

Effect of Silicon Nitride Whisker Content on the Flexural Strength of Silicon Nitride-Boron Nitride-Silicon Carbide Multi-Layer Composites

  • Park, Dong-Soo;Cho, Byung-Wook
    • Journal of the Korean Ceramic Society
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    • v.40 no.9
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    • pp.832-836
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    • 2003
  • Multi-layer ceramic composites were prepared by tape casting followed by hot pressing using silicon nitride layer with silicon nitride whiskers, silicon nitride layer with silicon carbide particles and boron nitride-alumina layer. The whiskers were aligned during the casting. As the whisker content of the silicon nitride layer was increased up to 10 wt%, the flexural strength of the multi-layer composite was increased. However, further increase of the whisker content in the layer resulted in a rapid decrease of the strength of the composite. The results suggest that the strength of multi-layer ceramic composite showing non-catastrophic failure behavior can be significantly improved by incorporating the aligned whiskers in the layers.

A Study on the Synthesis of Aluminium Nitride (질화 알루미늄 합성에 관한 연구)

  • Park, O Gyun;Choe, Sang Uk;Lee, Hui Cheol
    • Journal of the Korean Chemical Society
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    • v.34 no.4
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    • pp.370-376
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    • 1990
  • Synthesis of aluminium nitride has been studied by using the starting materials such as-alumina which was prepared at the lowest temperature from AlO(OH), anhydrous aluminium chloride and metallic aluminium powders. For the synthesis of aluminium nitride, the reaction temperature was carefully controlled and the reaction conditions were determined and discussed with the results. Reaction of metallic aluminium powder and nitrogen gas was taken place at relatively low temperature. The reaction parameters were determined kinetically.

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Preparation of AlN Powder Using Mesoporous Alumina and Its Characterization (메조포러스 알루미나를 이용한 AlN 분말 제조 및 특성분석)

  • Kim, Eun Bee;Lee, Yoon Joo;Shin, Dong Geun;Kwon, Woo Teck;Kim, Soo Ryong;Kang, Mi Sook;Kim, Young Hee
    • Journal of the Korean Ceramic Society
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    • v.51 no.6
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    • pp.544-548
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    • 2014
  • Aluminum nitride was synthesized using a carbothermal method from mesoporous alumina having a high surface area (> $1,000m^2/g$) as an aluminum source and CNTs (carbon nano tubes) as a carbon source. In this case the mesoporous alumina was used as the starting material instead of ${\alpha}-Al_2O_3$ with the expectation that the mesopores in mesoporous alumina act as channels for N2 gas and elimination of CO generated as by-product. It is also expected that the synthetic temperature should be lower compared to the use of ${\alpha}-Al_2O_3$ as a starting material due to its high surface area. The crystallinity of the produced aluminum nitride was studied by XRD and FT-IR, and the microstructure was investigated by FE-SEM. Also the purity of the aluminum nitride was analyzed through N/O determinator and ICP analysis.

Synthesis of Aluminum Nitride Powers and Whiskers from a (NH4)[Al(edta)]·2H2O Complex under a Flow of Nitrogen (질소 분위기에서 (NH4)[Al(edta)]·2H2O 착물으로부터 질화알루미늄 분말 및 휘스커의 합성)

  • Jung, Woo-Sik
    • Journal of the Korean Ceramic Society
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    • v.39 no.3
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    • pp.272-277
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    • 2002
  • Aluminum nitride (AlN) powders and whiskers were synthesized by a modified carbothermal reduction and nitridation where a ($NH_4)[Al(ethylenediaminetetraacetate)]{\cdot}2H_2O$ complex is used as precursor. The AlN powders were obtained by calcining the complex without mixing any carbon source under a flow of nitrogen in the temperature range 1200∼1500$^{\circ}$C and then burning out the residual carbon. The nitridation process was investigated by $^{27}Al$ magic-angle spinning (MAS) unclear magnetic resonance, infrared spectroscopy and X-ray diffraction. The complex is pyrolyzed, converted to ${\rho}$- and ${\gamma}$- alumina and then nitridated to AlN without ${\gamma}-{\alpha}$ alumina transition. The morphology of ${\gamma}$-alumina, when it was converted to AlN, was retained, strongly indicating that ${\gamma}$-alumina is converted to AlN through solid-state $AlO_xN_y$, not through gaseous intermediates such as aluminum and aluminaum suboxides. AlN whiskers were obtained, when a (0001) sapphire was used as a catalyst.

Crystalline Properties of Carbon Nitride films According to Substrates and Growth Conditions (기판과 성장조건에 따른 질화탄소막의 결정성장 특성)

  • 이지공;이성필
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.12
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    • pp.1103-1109
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    • 2003
  • Crystalline carbon nitride films have been deposited by RF reactive magnetron sputtering system with negative DC bias. The carbon nitride films deposited on various substrates showed ${\alpha}$- C$_3$N$_4$,${\beta}$-C$_3$N$_4$ and lonsdaleite structures through XRD and FTIR We can find the grain growth of hexagonal structure from SEMI photographs, which is coincident with the theoretical carbon nitride unit cell. When nitrogen gas ratio is 70 % and RF power is 200 W, the growth rate of carbon nitride film on quartz substrate is about 2.1 $\mu\textrm{m}$/hr.

Effect of $Al_2O_3$ and $Y_2O_3$ on Machining of Silicon itride (알루미나와 이트리아가 질화규소의 가공성에 미치는 영향)

  • 이수완;장태석;엄호성
    • Journal of the Korean Ceramic Society
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    • v.33 no.3
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    • pp.269-276
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    • 1996
  • The effect of sintering aids on the sinterability for silcion nitride has been studied by hundreds workers. However the effect of sintering aids on the machinability as the own trobles which is the major barrier for the field applications of the ceramic components has not been fully studied. in this study the contents of Al2O3 and Y2O3 in silicon nitride were varied from 0 to 8 wt% respectively. The physical and mechanical properties of the silcion nitride were measured. The optimal microstructure of silicon nitride balls with the excellent machinability by adding with various contents of sintering aids was studied by MGF(magnetic-fluid grinding)technique. An attempt to figure out how the mechanical properties influence the machinability of silicon-nitride ball was made.

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Fracture Behavior of Silicon Nitride-silicon Carbide-boron Nitride Multi-layer Composites with Different Layer Thickness

  • Cho, Byoung-Uk;Park, Dong-Soo;Park, Hong-Chae
    • Journal of the Korean Ceramic Society
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    • v.39 no.7
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    • pp.622-627
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    • 2002
  • Multi-layer composites consisting of silicon nitride, silicon nitride-silicon carbide and boron nitride-alumina layers were prepared fly stacking the corresponding ceramic tapes. The composites demonstrated self-diagnostic capability and non-catastrophic failure behavior. The composites consisting of many thin layers exhibited high strength and stepwise increase of the electrical resistance during the flexure test. The strength of the composite with too thick silicon nitride layers was low and the electrical resistance was abruptly increased to the detection limit of the digital multi-meter during the test. An extensive crack branching was observed in the weak (BN + Al$_2$O$_3$)layer.