• Electrical & Electronic Materials
• /
• v.8 no.3
• /
• pp.278-284
• /
• 1995

Thin fihn SnO$_{2}$ Gas Sensor was fabricated by electron-beam evaporation system and the target made by general firing method for the purpose of detecting gas components in air, especially methane gas. SnO$_{2}$ thin film was prepared on the polished alumina substrate which Pt interdigital electrode was precoated. The effects of annealing temperature and substrate temperature on the structural properties of SnO$_{2}$ thin film on glass were investigated using the X-ray diffraction. The good crystalline structure is formed when substrate temperature is 150[.deg. C] and annealing condition is 550[.deg. C], 1[hour]. And the sensing properties at various thickness of the SnO$_{2}$ thin film and the effects of PdCI$_{2}$ addition were also investigated. The good result is showed when the thickness is below 1000[.angs.] and the quantity of PdCI$_{2}$ addition is 4[wt%]. The thickness of SnO$_{2}$ thin film was measured by .alpha.-step and Elliopsometer.

• Journal of Dairy Science and Biotechnology
• /
• v.31 no.1
• /
• pp.67-73
• /
• 2013

Food allergy is defined as adverse reactions toward food mediated by aberrant immune mechanisms. Cow's milk allergy is one of the most common food allergies in childhood. This allergy is normally outgrown in the first year of life, however 15% of allergic children remain allergic. Cow's milk allergy seem to be associated with casein (${\alpha}_{s1}$-CN), ${\beta}$-lactoglobulin and whey protein. In addition to this, many other milk proteins are antigenic and capable of inducing immune responses. Various food processing affects the stability, structure and intermolecular interactions of cow milk proteins, as a result reduction the allergenic capacity. Heating, hydrolysis, chemical, proteolytic and other processes such as gamma-ray irradiation, high pressure, using probiotics treatments of milk to obtain hypoallergenic milk have been developed to reduce allergic reactions.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.220-220
• /
• 1999

In plasma source ion implantation, the target is immersed in the plasma and repetitively biased by negative high voltage pulses to implant the extracted ions from plasma into the surface of the target material. In this way, the problems of line-of-sight implantation in ion-beam ion implantation technique can be effectively solved. In addition, the high dose rate and simplicity of the equipment enable the ion implantation a commercially affordable process. In this work, plasma source ion implantation technique was used to improve the wear resistance of Co-cemented WC. which has been extensively used for high speed tools. Nitrogen and carbon ions were implanted using the pulse bias of -602kV, 25 sec and at various implantation conditions. The implanted samples were examined using scanning Auger electron spectroscopy and XPS to investigate the depth distributions of implanted ions and to reveal the chemical state change due to the ion implantation. The implanted ions were found to have penetrated to the depth of 3000$\AA$. The wear resistance of the implanted samples was measured using pin-on-disc wear tester and the wear tracks were examined with alpha-step profilometer.

• Asian Journal of Atmospheric Environment
• /
• v.5 no.1
• /
• pp.56-63
• /
• 2011

Quantifying the solute composition of a cloud droplet (or a whole droplet) is an important task for understanding formation processes and heating/cooling rates. In this study, a combination of droplet fixation and SR-XRF microprobe analysis was used to visualize and quantify elements in a micro-scale droplet. In this study, we report the preliminary outcome of this experiment. A spherical micro-scale droplet was successfully solidified through exposure to ${\alpha}$-cyano-acrylate vapor without affecting its size or shape. An X-ray microprobe system equipped at the beam line 37XU of Super Photon ring 8 GeV (SPring-8) was applied to visualize and quantify the elemental composition in an individual micro-scale droplet. It was possible to reconstruct 2D elemental maps for the K and Cl contained in a microdroplet that was dispensed from the 10-ppm KCl standard solution. Multi-elemental peaks corresponding to X-ray energy were also successfully resolved. Further experiments to determine quantitative measures of elemental mass in individual droplets and high-resolution X-ray microtomography (i.e., 3D elemental distribution) are planned for the future.

• Molecules and Cells
• /
• v.20 no.3
• /
• pp.361-363
• /
• 2005

Plasmid Achromobacter secretion (PAS) factor is a putative secretion factor that induces the secretion of periplasmic proteins. PAS factor from Vibrio vulnificus was crystallized at 294 K by the hanging drop vapor-diffusion method. It was isolated as a monomer during the purification procedures. The native crystal belongs to the F222 space group with unit cell parameters a = 56.1, b = 74.4, $c=80.0{\AA}$, ${\alpha}={\beta}={\gamma}=90^{\circ}$. The crystal was soaked in cryoprotectant containing 1 M NaBr for 1 h for MAD phasing. The diffraction limit of the Br-MAD data set was $1.9{\AA}$ using synchrotron X-ray irradiation at beam line BL-18B at the Photon Factory, Japan.

• Proceedings of the KSME Conference
• /
• 2001.06b
• /
• pp.372-377
• /
• 2001

A new non-linear of a straight pipe conveying fluid is presented for vibration analysis when the pipe is fixed at both ends. Using the Euler-Bernoulli beam theory and the non-linear Lagrange strain theory, from the extended Hamilton's principle are derived the coupled non-linear equations of motion for the longitudinal and transverse displacements. These equations of motion for are discretized by using the Galerkin method. After the discretized equations are linearized in the neighbourhood of the equilibrium position, the natural frequencies are computed from the linearized equations. On the other hand, the time histories for the displacements are also obtained by applying the $generalized-{\alpha}$ time integration method to the non-linear discretized equations. The validity of the new modeling is provided by comparing results from the proposed non-linear equations with those from the equations proposed by $Pa{\ddot{i}}dousis$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.183-183
• /
• 1999

The phases and interface formation of MgF2 on Si(111) were studied by using LEED, AES, and TPD. When thick MgF2 film was deposited on the Si(111) surface at RT뭉 annealed at higher temperatures, a sequence of LEED patterns (no LEED pattern $\longrightarrow$1$\times$1$\longrightarrow$3$\times$1$\longrightarrow$7$\times$7) was observed. On the 1$\times$1 model in which Mg adsorbs on T4 site and F on H3 site could explain the simultaneous desorption of SiF2 and Mg. When thin MgF2 film was deposited, and initial $\alpha$-$\times$1 phase transforms to 3$\times$3 and $\beta$-1$\times$1 by thermal annealing with a slow evaporation of F and diffusion of Mg into the surface. the 3$\times$3 surface changes to ${\gamma}$-1$\times$1 by the selective desorptioon of F under e-beam irradiation and subsesquently to a Mg-induced {{{{ SQRT { 3} }}}} structure by annealing at $600^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1992.05a
• /
• pp.105-109
• /
• 1992

ITO film, 1500${\AA}$ of thickness, onto glass and p-InP wafer was prepared by e-beam evaporator. The bet ITO film had the resistivity 5.3${\times}$10$\^$-3/ $\Omega$-cm, the concentration 6.5${\times}$10$\^$20/cm$\^$-3/, the transmittance above 80%, and the optical energy gap about 3.5eV. The higher pressure of injected oxygen, the less reverse bias saturation current and the more open circuit voltage. Under the optimum evaporation conditions, the efficiency was 7.19% and the series resistance, and the shunt resistance were respectively 8.5%, 3${\alpha}$, and 26K$\Omega$. The interdependence between activation energy and pre-exponential factor was found. We found he surface of the p-InP became n-type and consquently supposed that the buried homojunction formation, that is, n+-ITO/n-InP/p-InP was caused by Sn diffusion or loss of phosphorus in the interface layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.340-343
• /
• 2000

ITO(Indium Tin Oxide) films for transparent electrodes of FPD(Flat Panel Display) were patterned in atmosphere using laser. A pulse type(repetition rate of 10 Hz) Q-switched Nd:YAG laser which can generate the fundamental wavelength at 1064 nm or its harmonics(532, 266 nm) was used for Patterning of the ITO film. In case of using the second harmonic(532 nm) of Nd:YAG laser, the ITO film(thickness of 20 nm) was removed clearly with a laser fluence of 5.2 J/$\textrm{cm}^2$ and a beam scan speed of 200${\mu}{\textrm}{m}$/s. But the glass substrate was damaged when the laser fluence was over 5.2 J/$\textrm{cm}^2$. We discussed the etching mechanism of the ITO film using Nd:YAG laser with observation of the etching characteristics including a depths and widths of ITO films as a function of laser fluence using SEM(Scanning Electron Microscopy) and surface profiler($\alpha$-step 500).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.477-478
• /
• 2006

Characteristics of InAs/GaAs quantum dot (QD) ridge laser diodes (LDs) are investigated for high-power $1.3\;{\mu}m$ applications. For QD ridge LDs with a $5-{\mu}m$-wide stripe and a 1-mm-long cavity, the emission wavelength of 1284.1 nm, the single-uncoated-facet CW output power as high as 90 mW, the external efficiency of 0.31 W/A and the threshold current density of $800\;mA/cm^2$ are obtained. The linewidth enhancement factor ($\alpha$-factor) is successfully measured to be between 0.4 and 0.6, which are about four times as small values with respect to conventional quantum well structure. It is possible that this result significantly reduce the filamentation of far-field profiles resulting in better beam quality for high power operation.