• Korean Journal of Materials Research
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• v.27 no.11
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• pp.624-630
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• 2017

In this study, we investigated the overpotential of precipitation related to the catalytic activity of electrodes on the initial process of electrodeposition of Co and Co-Ni alloys on polycrystalline Cu substrates. In the case of Co electrodeposition, the surface morphology and the magnetic property change depending on the film thickness, and the relationship with the electrode potential fluctuation was shown. Initially, the deposition potential(-170 mV) of the Cu electrode as a substrate was shown, the electrode potential($E_{dep}$) at the $T_{on}$ of electrodeposition and the deposition potential(-600 mV) of the surface of the electrodeposited Co film after $T_{off}$ and when the pulse current was completed were shown. No significant change in the electrode potential value was observed when the pulse current was energized. However, in a range of number of pulses up to 5, there was a small fluctuation in the values of $E_{dep}$ and $E_{imm}$. In addition, in the Co-Ni alloy electrodeposition, the deposition potential(-280 mV) of the Cu electrode as the substrate exhibited the deposition potential(-615 mV) of the electrodeposited Co-Ni alloy after pulsed current application, the $E_{dep}$ of electrodeposition at the $T_{on}$ of each pulse and the $E_{imm}$ at the $T_{off}$ varied greatly each time the pulse current was applied. From 20 % to less than 90 % of the Co content of the thin film was continuously changed, and the value was constant at a pulse number of 100 or more. In any case, it was found that the shape of the substrate had a great influence.

• Korean Journal of Materials Research
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• v.13 no.10
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• pp.673-676
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• 2003

We have investigated $Al_{x}$ $Ga_{l-x}$ N/GaN epilayers (x = 0.08, 0.15) grown by metal organic vapor phase epitaxy on sapphire with photoluminescence(PL), and persistent photoconductivity(PPC) experiments. An anomalous S-shaped shift behavior of temperature dependencies of PL peak energy is observed for the x = 0.15 sample. In PPC measurement, showed that the dark current recovery time of $Al_{x}$$Ga_{l-x}$ N/GaN epilayers mainly depends on the Al content. These behaviors are usually attributed to the presence of carrier localization states. All these phenomena are explained based on the alloy compositional fluctuations in the $Al_{x}$ /$Ga_{l-x}$ N/ epilayers. The photocurrent quenching observed in PPC measurements for $Al_{x}$ $Ga_{l-x}$ N/ epilayers less than 0.2 $\mu\textrm{m}$ thickness indicates that the presence of metastable state in the bandgap of GaN layer, and that the excess holes in the valence band recombine with free electrons.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.436-441
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• 2011

Metal coating with several nanometer thickness was applied on the carbon nanotubes (CNTs) in order to improve electron emission characteristics and emission reliability for the potential applications in the area of various electron sources and displays. CNTs were grown on the 2-nm thick Invar (52% Fe, 42% Ni, 6% Co alloy)-catalized Si substrate by using plasma-enhanced chemical vapor deposition at $450^{\circ}C$. In order to reduce the spatial density of densely packed CNTs, as-grown CNTs were partly etched back by $N_2$ plasma and subsequently coated with 5~150 nm thick Ti by a sputtering method. 5 nm thick Ti-coated CNTs produced four times higher emission current density at the electric field of 6 V/${\mu}m$ and much lower emission current fluctuation, compared with the as-grown CNTs. These improved emission properties are mainly due to not only the work function of Ti (4.3 eV) lower than that of pristine CNTs (5 eV), but also lower contact resistance and better adhesion between CNT emitters and substrate accomplished by Ti coating.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.293-293
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• 2014

Over last decade InGaN alloy structures have become the one of the most promising materials among the numerous compound semiconductors for high efficiency light sources because of their direct band-gap and a wide spectral region (ultraviolet to infrared). The primary cause for the high quantum efficiency of the InGaN alloy in spite of high threading dislocation density caused by lattice misfit between GaN and sapphire substrate and severe built-in electric field of a few MV/cm due to the spontaneous and piezoelectric polarizations is generally known as the strong exciton localization trapped by lattice-parameter-scale In-N clusters in the random InGaN alloy. Nonetheless, violet-emitting (390 nm) conventional low-In-content InGaN/GaN multi-quantum wells (MQWs) show the degradation in internal quantum efficiency compared to blue-emitting (450 nm) MQWs owing higher In-content due to the less localization of carrier and the smaller band offset. We expected that an improvement of internal quantum efficiency in the violet region can be achieved by replacing the conventional low-In-content InGaN/GaN MQWs with ultra-thin, high-In-content (UTHI) InGaN/GaN MQWs because of better localization of carriers and smaller quantum-confined Stark effect (QCSE). We successfully obtain the UTHI InGaN/GaN MQWs grown via employing the GI technique by using the metal-organic chemical vapor deposition. In this work, 1 the optical and structural properties of the violet-light-emitting UTHI InGaN/GaN MQWs grown by employing the GI technique in comparison with conventional low-In-content InGaN/GaN MQWs were investigated. Stronger localization of carriers and smaller QCSE were observed in UTHI MQWs as a result of enlarged potential fluctuation and thinner QW thickness compared to those in conventional low-In-content MQWs. We hope that these strong carrier localization and reduced QCSE can turn the UTHI InGaN/GaN MQWs into an attractive candidate for high efficient violet emitter. Detailed structural and optical characteristics of UTHI InGaN/GaN MQWs compared to the conventional InGaN/GaN MQWs will be given.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.126-131
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• 1999

$Cd_{1-x}Mn_xTe$ thin films were grown on GaTs (100) substrates by hot-wall epitaxy method. From the XRD measurements, it was found that CdTe/GaAs (100)film was grown as a single crystal with the same growth plane of (100) and $Cd_{1-x}Mn_xTe$film as a poly crystal as Mn content was increased, and the lattice constant was decressed with the similar gradient of bulk crystal as x was increased. From the PL measurements, $L_1$line due to the exciton trapped on an acceptor and $L_2$line due to an exciton trapped on a shallow potential fluctuation were observed, and $L_1$line was observed only in $Cd_{0.91}Mn_{0.09}$te but it was disappeared probably due to a stronger lacalization of excitons with increasing alloy fluctuation.$L_2$line was dominant in case of $x{\ge}0.2$and for higher Mn contents the broad transition about 2.0eV associated to the 3d levels of the $Mn^{2+}$ ion dominated the PL spectrum, and the $L_2$ transition become weaker and weaker. For$x{\ge}0.4$, the transition line about 2.0eV due to $Mn^{2+}$ion showed no shift.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.174-175
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• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.