• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.195-195
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• 2008

CAS계 유리에 $CaCO_3-Al_2O_3$ 혼합물 및 화합물을 10, 30 wt% 첨가하여 저온 소걸 및 마이크로파 유전 특성을 고찰하였다. CAS계 유리의 연화온도는 $841^{\circ}C$ 이며, CAS계 유리에 $CaCO_3$ 와 30 wt%의 $CaCO_3-Al_2O_3$ 혼합물을 melting되며, 10 wt%의 $CaCO_3$, $Al_2O_3$, $1CaCO_3-1Al_2O_3$ 혼합물 및 $CaAl_2O_4$ 화합물를 10 wt% 첨가하였을 때 $900^{\circ}C$ 이하에서 소걸이 가능하였다. 복합체의 XRD 상 분석 결과, CaCO3를 첨가하였을 때에는 모든 조성이 비정질을 나타내었고, $Al_2O_3$와 $1CaCO_3-1Al_2O_3$ 혼합물은 $Al_2O_3$ 결정상이 생성되었고, $CaAl_2O_4$ 화합물은 $CaAl_2Si_2O_8$의 hexagonal와 anorthite 결정상이 생성되었다. 따라서 CAS-10 (A, C-A, CA) 복합체는 $900^{\circ}C$에서 각각 유전율 ($\varepsilon_r$) 6.4, 6.9, 5.15 와 품질계수 ($Q^*f$) 2,400, 1,500, 3,000의 마이크로파 유전 특성을 나타내어 LTCC 기판 재료로 사용이 가능하며, 특히 $CaAl_2O_4$ 화합물을 사용하였을 때 가장 우수한 유전 특성을 나타내는 것을 확인하였다.

• Korean Journal of Materials Research
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• v.29 no.2
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• pp.129-135
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• 2019

A powder mixture of 70 wt% $Al_2O_3$ and 30 wt% hydroxyapatite (HA) is sintered at $1300^{\circ}C$ or $1350^{\circ}C$ for 2 h at normal pressure. An $MgF_2$-added composition to make HA into fluorapatite (FA) is also prepared for comparison. The samples without $MgF_2$ show ${\alpha}$ & ${\beta}$-tricalcium phosphates (TCPs) and $Al_2O_3$ phases with no HA at either of the sintering temperatures. In the case of $1,350^{\circ}C$, a $CaAl_4O_7$ phase is also found. Densification values are 69 and 78 %, and strengths are 156 and 104 MPa for 1,300 and $1,350^{\circ}C$, respectively. Because the decomposition of HA produces a $H_2O$ vapor, fewer large pores of $5-6{\mu}m$ form at $1,300^{\circ}C$. The $MgF_2$-added samples show FA and $Al_2O_3$ phases with no TCP. Densification values are 79 and 87 %, and strengths are 104 and 143 MPa for 1,300 and $1,350^{\circ}C$, respectively. No large pores are observed, and the grain size of FA ($1-2{\mu}m$) is bigger than that of TCP ($0.7{\mu}m{\geq}$) in the samples without $MgF_2$. The resulting $TCP/Al_2O_3$ and $FA/Al_2O_3$ composites fabricated in situ exhibit strengths 6-10 times higher than monolithic TCP and HA.

• Journal of the Korean Ceramic Society
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• v.32 no.3
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• pp.331-340
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• 1995

Microwave (Hybrid) Heating (MHH) was used to oxidize and sinter Al-Al2O3 powder mixture. For 25 v/o Al specimen and 35 v/o Al specimen, the total processing to produce low-shrinkage reaction bonded alumina was carried out within 1 hour even though conventional furnace process took more than 10 hours. Compared with conventional fast firing process, MHH process increased more than 40% oxidation at the same temperature, and these high oxidation rates were thought to be caused by the surface ohmic current on Al particles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.275-277
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• 2003

최근 logic 소자의 gate oxide로 기존의 $SiO_2$, SiON보다 고유전, 작은 누설전류를 가지는 물질의 개발이 중요한 이슈가 되고 있다. 본 실험실에서는 Si 기판위에 $HfO_2$를 바로 증착하는 경우, 기판의 Si이 박막내로 확산하여 유전율이 저하되는 문제점을 인식하고, 기판과 $HfO_2$ 사이에 $AlO_x$를 방지막으로 사용하였다. 이 때, $AlO_x$의 Al precursor는 TMA로 고정하고, 산화제로는 $H_2O$, $O_2$-plasma, $O_3$를 각각 사용하였다. 모든 $AlO_x/\;HfO_y$ 박막에서 매우 우수한 누설전류특성을 얻을 수 있었는데, 특히 $O_3$를 산화제로 사용한 $AlO_x$방지막의 경우 가장 우수한 특성을 보였다. 또한 질소 분위기에서 $800^{\circ}C$ 10분간 열처리한 후, 방지막을 사용한 모든 경우에서 보다 향상된 열적 안정성을 관찰할 수 있었다.

• Electrical & Electronic Materials
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• v.7 no.1
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• pp.57-63
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• 1994

Aluminum oxide($Al_2{O_3}$) offers some unique advantages over the conventional silicon dioxide( $SiO_{2}$) gate insulator: greater resistance to ionic motion, better radiation hardness, possibility of obtaining low threshold voltage MOS FETs, and possibility of use as the gate insulator in nonvolatile memory devices. We have undertaken a study of the dielectric breakdown of $Al_2{O_3}$ on Si deposited by GAIVBE technique. In our experiments, we have varied the $Al_2{O_3}$ thickness from 300.angs. to 1400.angs. The resistivity of $Al_2{O_3}$ films varies from 108 ohm-cm for films less than 100.angs. to 10$_{13}$ ohm-cm for flims on the order of 1000.angs. The flat band shift is positive, indicating negative charging of oxide. The magnitude of the flat band shift is less for negative bias than for positive bias. The relative dielectric constant was 8.5-10.5 and the electric breakdown fields were 6-7 MV/cm(+bias) and 11-12 MV/cm (-bias).

• Journal of the Korean Magnetics Society
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• v.16 no.6
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• pp.283-286
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• 2006

We have studied the role of ${\alpha}-Al_{2}O_{3}$ buffer layer as a diffusion barrier in the Ba-ferrite/$SiO_{2}$ magnetic thin films for high-density recording media. In the interface of amorphous Ba-ferrite $(1900-{\AA}-thick)/SiO_{2}$ thin film during annealing, the interfacial diffusion started to occur at ${\sim}700^{\circ}C$. As the annealing temperature increased up to $800^{\circ}C$, the interfacial diffusion abruptly proceeded resulting in the high interface roughness and the deterioration of the magnetic properties. In order to control the interfacial diffusion at the high temperature, we introduced ${\alpha}-Al_{2}O_{3}$ buffer layer ($110-{\AA}-thick$) in the interface of Ba-ferrite/$SiO_{2}$ thin film. During the annealing of Ba-ferrite/${\alpha}-Al_{2}O_{3}/SiO_{2}$ thin film even at ${\sim}800^{\circ}C$, the interface was very smooth. The magnetic properties, such as saturation magnetization and intrinsic coercivity, were also enhanced, due to the inhibition of interfacial diffusion by the ${\alpha}-Al_{2}O_{3}$ buffer layer. Our study suggests that the ${\alpha}-Al_{2}O_{3}$ buffer layer act as a useful interfacial diffusion barrier in the Ba-ferrite/$SiO_{2}$ magnetic thin films.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.4
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• pp.140-148
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• 2010

The effects of the addition of either monoclinic $ZrO_2(ZrO_2(m))$ or tetragonal $ZrO_2(ZrO_2(t))$ containing 5.35[wt%] $Y_2O_3$ on the physical properties and electrical conductivity of $Al_2O_3$ were investigated. The addition of $ZrO_2$(m) and $ZrO_2$(t) increased sintered density of $Al_2O_3$. The Vickers hardness also increased as addition of $ZrO_2$(t) increased going through a maximum at 20[wt%] and the hardness of the specimens was found to be dependent on the sintered density. The addition of $ZrO_2$(t) improved the hardness of $Al_2O_3-ZrO_2$ systems and the $ZrO_2$(m) addition showed the better effect on the thermal shock property of $Al_2O_3-ZrO_2$ systems than that of the $ZrO_2$(t) addition. Above 15[wt%] addition of $ZrO_2$(t), the electrical conductivity is gradually increased with increasing applied voltage but not effects by addition of $ZrO_2$(m).

• Journal of the Korean Ceramic Society
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• v.33 no.2
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• pp.149-154
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• 1996

ZnO and Al-doped ZnO thin films were prepared by sol-gel dip-coating method and electrical and optical properties of films were investigated. Using the zinc acetate dihydrate and acetylaceton(AcAc) as a chelating agent stable ZnO sol was synthesized with HCl catalyst. Adding aluminium chloride to the ZnO sol Al-doped ZnO sol could be also synthesized. As Al contents increase the crystallinity of ZnO thin film was retarded by increased compressive stress in the film resulted from the difference of ionic radius between Zn2+ and Al3+ The thickness of ZnO and Al-doped ZnO thin film was in the range of 2100~2350$\AA$. The resistivity of ZnO thin films was measured by Van der Pauw method. ZnO and Al-doped ZnO thin films with annealing temperature and Al content had the resistivity of 0.78~1.65$\Omega$cm and ZnO and Al-doped ZnO thin film post-annealed at 40$0^{\circ}C$ in vacuum(5$\times$10-5 torr) showed the resistivity of 2.28$\times$10-2$\Omega$cm. And the trans-mittance of ZnO and Al-doped ZnO thin film is in the range of 91-97% in visible range.

• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1093-1096
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• 2001

The Solid solution of A $l_2$ $O_3$ into ZnO can be defined by the substitution reaction of Al$\^$3+/ ions into the Zn$\^$2+/ sites of ZnO crystal lattice, the tetrahedral interstices composed of four neighbor oxygen ions in the wurtzite structure. Since the reaction either creates new zinc vacancies or consumes the oxygen vacancies, it should be in equilibrium with ZnO nonstoichiometry and disorder reactions. The relationships make oxygen partial pressure P$\sub$o2/ control the concentrations of the vacancies and consequently limit the Al solubility in ZnO, [Al$\sub$zn/]$\sub$max/. This paper firstly reports with a refined model for defect quilibria in ZnO that the solubility decrease with the increase of P$\sub$o2/, [Al$\sub$zn/]$\sub$max/ P$\sub$o2/$\^$-1/4/.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.3
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• pp.106-110
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• 2014

The passivation property of $Al_2O_3$ thin film formed using atomic layer deposition (ALD) for the application of crystalline Si solar cells was investigated using microwave photoconductance decay (${\mu}$-PCD). After post-annealing at $400^{\circ}C$ for 5 min, $Al_2O_3$ thin film exhibited the structural stability having amorphous nature without the interfacial reaction between $Al_2O_3$ and Si. The post-annealing at $400^{\circ}C$ for 5 min led to an increase in the relative effective lifetime of $Al_2O_3$ thin film. This could be associated with the field effective passivation combined with surface passivation of textured Si. The capacitance-voltage (C-V) characteristics of the metal-oxide-semiconductor (MOS) with $Al_2O_3$ thin film post-annealed at $400^{\circ}C$ for 5 min was carried out to evaluate the negative fixed charge of $Al_2O_3$ thin film. From the relationship between flatband voltage ($V_{FB}$) and equivalent oxide thickness (EOT), which were extracted from C-V characteristics, the negative fixed charge of $Al_2O_3$ thin film was calculated to be $2.5{\times}10^{12}cm^{-2}$, of which value was applicable to the passivation layer of n-type crystalline Si solar cells.