• 한국재료학회지
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• 제21권2호
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• pp.106-110
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• 2011

A high thermal conductive AlN composite coating is attractive in thermal management applications. In this study, AlN-YAG composite coatings were manufactured by atmospheric plasma spraying from two different powders: spray-dried and plasma-treated. The mixture of both AlN and YAG was first mechanically alloyed and then spray-dried to obtain an agglomerated powder. The spray-dried powder was primarily spherical in shape and composed of an agglomerate of primary particles. The decomposition of AlN was pronounced at elevated temperatures due to the porous nature of the spray-dried powder, and was completely eliminated in nitrogen environment. A highly spherical, dense AlN-YAG composite powder was synthesized by plasma alloying and spheroidization (PAS) in an inert gas environment. The AlN-YAG coatings consisted of irregular-shaped, crystalline AlN particles embedded in amorphous YAG phase, indicating solid deposition of AlN and liquid deposition of YAG. The PAS-processed powder produced a lower-porosity and higher-hardness AlN-YAG coating due to a greater degree of melting in the plasma jet, compared to that of the spray-dried powder. The amorphization of the YAG matrix was evidence of melting degree of feedstock powder in flight because a fully molten YAG droplet formed an amorphous phase during splat quenching.

• 한국레이저가공학회:학술대회논문집
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• 한국레이저가공학회 1998년도 춘계학술발표대회 초록개요집
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• pp.35-36
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• 1998

• 한국세라믹학회지
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• 제26권1호
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• pp.13-20
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• 1989

After sintering Si3N4 containing 20wt% of variable composition ratio of Y2O3 and Al2O3 at 1$600^{\circ}C$, the specimens were annealed at 125$0^{\circ}C$ and 135$0^{\circ}C$ for 5, 10, 15 hours in order to crystallize the remanining oxynitride glass phases. The main grain-boundary crystalline phases in the Si3N4-Y2O3-Al2O3 system were melilite and YAG. By annealing 15hrs. at 125$0^{\circ}C$, almost all of the glasses were crystallized. During the growth of melilite, lattice volyume of $\beta$-Si3N4 was increased as Al3+ and O2- ions in the oxynitride glass diffuse into $\beta$-Si3N4 lattice, but during the growth of YAG, lattice volume of $\beta$-Si3N4 was decreased by reverse diffusion of Al3+ and O2- ions. In case of crystallization of glass phase to melilite, thermal expansion of sample was decreased, but in case of crystallization to YAG, inverse phenomen on was observed.

• 한국세라믹학회지
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• 제56권1호
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• pp.71-76
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• 2019

Monochromatic amber phosphor in glasses (PiGs) for automotive LED applications were fabricated with $YAG:Ce^{3+}$, $CaAlSiN_3:Eu^{2+}$ phosphors and Pb-free silicate glass. After synthesis and thickness-thinning process, PiGs were mounted on high-power blue LED to make monochromatic amber LEDs. PiGs were simple mixtures of 566 nm yellow YAG, 615 nm red $CaAlSiN_3:Eu^{2+}$ phosphor and transparent glass frit. The powders were uniaxially pressed and treated again through CIP (cold isostatic pressing) at 200 MPa for 20 min to increase packing density. After conventional thermal treatment at $550^{\circ}C$ for 30 min, PiGs were applied by using GPS (gas pressure sintering) to obtain a fully dense PiG plate. As the phosphor content increased, the density of the sintered body decreased and PiGs containing 30 wt% phosphor had full sintered density. Changes in photoluminescence spectra and color coordination were investigated by varying the ratio of $YAG/CaAlSiN_3$ and the thickness of the plates. Considering the optical spectrum and color coordinates, PiG plates with $240{\mu}m$ thickness showed a color purity of 98% and a wavelength of about 605 nm. Plates exhibit suitable optical characteristics as amber light-converting material for automotive LED applications.

• 한국레이저가공학회지
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• 제3권2호
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• pp.25-33
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• 2000

One of perspective direction of microfabrication is direct laser writing technology that allows to create metal, semiconductive and dielectric micropatterns on substrate surface. In this work, a two step method, the combination of seed forming process, in which metallic Al seed was selectively generated on AlN ceramic substrate by direct writing technique using a pulsed Nd : YAG laser and subsequent electroless Ni plating on the activated Al seed, was presented. The effects of laser parameters such as pulse energy, scanning speed and pulse frequency on shape of Alseed and conductor line after electroless Ni plating were investigated. The nature of the laser activated surface is analyzed from XPS data. The line width of this metallic Al and Ni is analyzed using SEM. As a results, Al seed line with 24㎛ width and 100㎛ isolated line space is obtained. Finally, laser direct writing can be applied in the field between thin and thick film technique in electronic industry.

• 한국레이저가공학회:학술대회논문집
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• 한국레이저가공학회 1998년도 추계학술발표대회 초록개요집
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• pp.24-28
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• 1998

• 한국결정성장학회지
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• 제18권6호
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• pp.237-241
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• 2008

AlN 소결체를 제조함에 있어서 $Y_2O_3$를 소결 첨가제로 하여 일축 가압 소결법을 적용하여 소결 조제 첨가량의 변화와 소결 시간의 변화에 따른 소결 특성, 미세구조 및 열전도도 측성에 대하여 조사하였다. $Y_2O_3$의 첨가로 인하여 AlN의 치밀화가 첨가하지 않은 경우보다 증진됨을 확인할 수 있었으며, 결정립계 및 결정립계 삼중점에서 YAG 이차상을 형성함으로써 AlN 결정 격자 내의 산소 결함 농도를 낮춰 열전도도를 향상시킴을 알 수 있었다. 특히, 소결 시간을 증대함에 따라 결정립 성장 및 열전도도의 방해 요소인 YAG 이차상이 고온에서 휘발됨에 따라 열전도도가 크게 향상됨을 확인할 수 있었다.

• Journal of Welding and Joining
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• 제18권2호
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• pp.86-94
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• 2000

This study was performed to investigate types and formation mechanism of cracks in two Al alloy welds, A5083 and A7N01 spot-welded by pulse Nd : YAG laser, using SEM, EPMA and Micro-XRD. In the weld zone, three types of crack were observed : center line crack({TEX}$C_{C}${/TEX}), diagonal crack({TEX}$C_{D}${/TEX}), and U shape crack({TEX}$C_{U}${/TEX}). Also, HAZ crack({TEX}$C_{H}${/TEX}) was observed in the HAZ region, furthermore, mixing crack({TEX}$C_{M}${/TEX}) consisting of diagonal crack and HAZ crack was observed. White film was formed at th hot crack region in the fractured surface after it was immersed to 10% NaOH water. In the case of A5083 alloy, white films in {TEX}$C_{C}${/TEX} crack and {TEX}$C_{D}${/TEX} crack region were composed of low melting phases, {TEX}$Fe_{2}SiAl_{8}${/TEX} and eutectic phases, $Mg_2$Al$_3$ and $Mg_2$Si. Such films observed $CuAl_2$, {TEX}$Mg_{32}(Al,Zn)_{3}${/TEX}, MgZn$_2$, $Al_2$CuMg and $Mg_2$Si were observed in the whitely etched films near {TEX}$C_{C}${/TEX} crack and {TEX}$C_{D}${/TEX} crack regions. The formation of liquid films was due to the segregation of Mg, Si, Fe in the case of A5083 alloy and Zn, Mg, Cu, Sim in the case of A7N01 alloy, respectively. The {TEX}$C_{C}${/TEX} and {TEX}$C_{D}${/TEX} cracks were regarded as a result of the occurrence of tensile strain during the welding process. The formation of {TEX}$C_{M}${/TEX} crack is likely to be due to the presence of liquid film at the grain boundary near the fusion line in the base metal as well as in the weld fusion zone during solidification. The {TEX}$C_{U}${/TEX} crack is considered a result of the collapsed keyhole through incomplete closure during rapid solidification.

• 한국세라믹학회지
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• 제30권10호
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• pp.829-837
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• 1993

Chemically and geometrically homogeneous mixing of Si3N4 powders with sintering additives(YAG, 3Y2O3$.$5Al2O3) was attempted via coprecipitation method. X-ray dot maps for the additive elements(Al and Y) showed that the additives are evenly distributed in the powder mixture prepared by coprecipitation method(CP). TEM observation of the coprecipittion-treated Si3N4 powders revealed that they are covered with extremely fine crystallites of additive. The shift in isoelectric point(IEP) of Si3N4 powders from pH 6.7 to pH 7.9 after coprecipitation mixing gave another evidence for coating of Si3N4 powders with YAG additives. SIMS analysis for composition on the surface and in the matrix of mixed powders showed that the YAG additives are highly enriched on the surface of coprecipitation-treated Si3N4 powders. Especially when a small amount of additive was used, the effect of homogeneous additive distribution on densification was preceptible: After pressureless-sintering of powder compacts containing 5 mol% YAG at 1800$^{\circ}C$ for 0.5h, a sintered density of 96.5% theoretical was obtained from the specimens prepared bycoprecipitation in comparison with 93.8% from the mechanically-mixed one.

• 한국세라믹학회지
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• 제45권12호
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• pp.827-831
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• 2008

Spark plasma sintering (SPS) of AlN ceramics were carried out with ${Y_2}{O_3}$ as sintering additive at a sintering temperature $1,550{\sim}1,700^{\circ}C$. The effect of ${Y_2}{O_3}$ addition on sintering behavior and thermal conductivity of AlN ceramics was studied. ${Y_2}{O_3}$ added AlN showed higher densification rate than pure AlN noticeably, but the formation of yttrium aluminates phases by the solid-state reaction of ${Y_2}{O_3}$ and ${Al_2}{O_3}$ existed on AlN surface could delay the densification during the sintering process. The thermal conductivity of AlN specimens was promoted by the addition of ${Y_2}{O_3}$ up to 3 wt% in spite of the formation of YAG secondary phase in AlN grain boundaries because ${Y_2}{O_3}$ addition could reduced the oxygen contents in AlN lattice which is primary factor of thermal conductivity. However, the thermal conductivity rather decreased over 3 wt% addition because an immoderate formation of YAG phases in grain boundary could decrease thermal conductivity by a phonon scattering surpassing the contribution of ${Y_2}{O_3}$ addition.