• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.1
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• pp.1-7
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• 2014

Aluminum nitride, which has outstanding properties such as high thermal conductivity and electrical resistivity, has been received a great attention as a substrate and packaging material of semiconductor devices. Since aluminum nitride has a high sintering temperature of 2173 K and its properties depends on the impurity level, it is necessary to synthesize high-purity and nano-sized aluminum nitride powders for the applications. In this research, we synthesized high purity aluminum nitride nanopowders from aluminum using RF induction thermal plasma system. Sheath gas (NH3) flow was controlled to establish the synthesis condition of high purity aluminum nitride nanopowders. The obtained aluminum nitride nanopowders were evaluated by XRD, SEM, TEM, BET, FTIR and N-O analysis.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.136-136
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• 2003

In fiber optic networks, system size and cost can be significantly reduced by development of optical components through planar optical waveguides. One important step to realize the compact optical devices is to develop planar optical amplifier to compensate the losses in splitter or other components. Planar amplifier provides optical gain in devices less than tens of centimeters long, as opposed to fiber amplifiers with lengths of typically tens of meters. To achieve the same amount of gain between the planar and fiber optical amplifier, much higher Er doping levels responsible for the gain than in the fiber amplifier are required due to the reduced path length. These doping must be done without the loss of homogeniety to minimize Er ion-ion interactions which reduce gain by co-operative upconversion. Sol-gel process has become a feasible method to allow the incorporation of Er ion concentrations higher than conventional glass melting methods. In this work, Er-doped $SiO_2$-A1$_2$ $O_3$ films were prepared by two different method via sol -Eel process. Tetraethylorthosilicate(TEOS)/aluminum secondary butoxide [Al (OC$_4$ $H_{9}$)$_3$], methacryloxypropylcnethoxysaane(MPTS)/aluminum secondary butofde [Al(OC$_4$ $H_{9}$)$_3$] systems were used as starting materials for hosting Er ions. Er-doped $SiO_2$-A1$_2$ $O_3$ films obtahed after heat-treating, coatings on Si substrate were characterized by X-ray din action, FT-IR, and N-IR fluorescence spectroscopy. The luminescence properties for two different processing procedure will be compared and discussed from peak intensity and life time.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.259-259
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• 2010

Periodically polarity inverted (PPI) ZnO structures on (0001) Al2O3 substrates are demonstrated by plasmas assisted molecular beam epitaxy. The patterning and re-growth methods are used to realize the PPI ZnO by employing the polarity controlling method. For the in-situ polarity controlling of ZnO films, Cr-compound buffer layers are used.[1, 2] The region with the CrN intermediate layer and the region with the Cr2O3 and Al2O3 substrate were used to grow the Zn- and O-polar ZnO films, respectively. The growth behaviors with anisotropic properties of PPI ZnO heterostructures are investigated. The periodical polarity inversion is evaluated by contrast images of piezo-response microscopy. Structural and optical interface properties of PPI ZnO are investigated by the transmission electron microcopy (TEM) and micro photoluminescence ($\mu$-PL). The inversion domain boundaries (IDBs) between the Zn and the O-polar ZnO regions were clearly observed by TEM. Moreover, the investigation of spatially resolved local photoluminescence characteristics of PPI ZnO revealed stronger excitonic emission at the interfacial region with the IDBs compared to the Zn-polar or the O-polar ZnO region. The possible mechanisms will be discussed with the consideration of the atomic configuration, carrier life time, and geometrical effects. The successful realization of PPI structures with nanometer scale period indicates the possibility for the application to the photonic band-gap structures or waveguide fabrication. The details of application and results will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.289-289
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• 2013

While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.90-93
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• 2002

In the surface pressure-area isotherms of mixed monolayers, mixtures containing as much as 30 mol% of AA form stable condensed monolayer while the monolayer without AA is in the expanded state because PVK take on 3D collapsed. All of the mixed monolayers with 0, 10, 20 and 30 mol% of AA could be readily transferred onto ITO substrate at 16, 17, 24 and 26 mN/m, respectively. The monolayer containing 30 mol% of AA, however, showed a roughness value of 28A and became homogeneous decreasing with the phase separation. We fabricated organic EL device of ITO/CuPc/MEL/BBOT/iLiF/Al using mixed monolayer of 13, 19 and 25 layer deposited by LB method as a emitting layer. In the voltage-current characteristics of EL device, current density was much smaller than that of the spin-coated devices. It may due to the large contact resistance existed at the interface of LB layer/organic layer inhibit carrier injection to the emitting layer. EL spectra of device showed peaks at 450. 470, 505, 555 and 650 nm and the white light emission indicate the CIE coordinate x=0.306, y=0.353.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.251-254
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• 2001

This paper describes an efficiency improvement of buried contact solar cell (BSCS) with a structure of MgF$_2$/CeO$_2$/Ag/Cu/Ni grid/n$^{+}$ emitter/p-type Si base/p$^{+}$/Al. Theoretical and experimental investigations were performed on a double layer antireflection (DLAR) coating of MgF$_2$/CeO$_2$. We investigated CeO$_2$ films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. An optimized DLAR coating shewed a reflectance as low as 2.04 % in the wavelengths ranged from 0.4 ${\mu}{\textrm}{m}$ to 1.1 ${\mu}{\textrm}{m}$. BCSC cell efficiency was improved from 16.2 % without any AR coating to 19.9 % by employing DLAR coatings. Further details on MgF$_2$/CeO$_2$ DLAR coatings on the BCSC cells are presented in this paper.per.

• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.43-49
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• 2002

Pd/Ge/Pd/Ti/Au ohmic contact to n-type InGaAs was investigated with rapid thermal annealing conditions. Minimum specific contact resistivity of $1.1\times10^{-6}\Omega\textrm{cm}^2$ was achieved after annealing at $400^{\circ}C$/10sec, and a ohmic performance was degraded at higher annealing temperature due to the chemical reaction between the ohmic contact materials and the InGaAs substrate. However, non-spiking planar interface and relatively good ohmic contact($high-10^{-6};{\Omega}\textrm{cm}^2$) were maintained. This ohmic contact system is expected to be a promising candidate for compound semiconductor devices.

• Advances in nano research
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• v.9 no.4
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• pp.221-235
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• 2020

The following composition establishes a nonlocal strain gradient plate model that is essentially related to mass sensors laying on Winkler-Pasternak medium for the vibrational analysis from graphene sheets. To achieve a seemingly accurate study of graphene sheets, the posited theorem actually accommodates two parameters of scale in relation to the gradient of the strain as well as non-local results. Model graphene sheets are known to have double variant shear deformation plate theory without factors from shear correction. By using the principle of Hamilton, to acquire the governing equations of a non-local strain gradient graphene layer on an elastic substrate, Galerkin's method is therefore used to explicate the equations that govern various partition conditions. The influence of diverse factors like the magnetic field as well as the elastic foundation on graphene sheet's vibration characteristics, the number of nanoparticles, nonlocal parameter, nanoparticle mass as well as the length scale parameter had been evaluated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.2
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• pp.119-130
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• 1994

To deposit silicon on borosilicate glass substrates, 18 different substrate combinations were investigated because of the difficulty of direct deposition of silicon. Sucessful results were obtained from Al-and Mg-treated glass and furnace annealed sputtered silicon deposited glass substrates. A continuous silicon thin film on a large area substrates was obtained in the temperatures ranges from $420^{\circ}C to 520^{\circ}C$. These thin films might be applied to lower the cost of solar cells and solar cell modules.

• Journal of the Microelectronics and Packaging Society
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• v.3 no.2
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• pp.27-38
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• 1996

Lithium fluorhectorite 결정상을 함유한 glass ceramics 분말의 형성과 제조된 glass ceramics 분말을 이용한 저온 소결기판의 특성평가를 하였다. Li2O-MgO-MgF2-SiO2 계 유 리로 핵형성 및 결정 성장을 실시하여 lithium fluorhectorite 결정상을 지닌 glass ceramics 를 제조하였다. 유리시편의 핵형성 온도는 46$0^{\circ}C$였고 결정성장온도는 600, 640, 110$0^{\circ}C$에서 나타났다. $600^{\circ}C$에서의 결정상으 Li2.4LiSi4O10F2가 나타났다. Li2.4Mg8LiSi4와 Li2.8Mg0.6SiO4은 lithium fluorhectorite 결정상으로 되기 위한 중간상임을 확인할수 있었다. 64$0^{\circ}C$에서 열처리 후 110$0^{\circ}C$에서 재열처리하여 형성된 결정은 lithium fluorhectorite 와 tridymite가 최종 결정 상으로 나타났다. 이것은 수중에서 water swelling 현상에 의하여 분말화할 수 있었다, 기판 제조용 slurry를 제조하기 위해 glass ceramics 분말에 Al2O3분말을 0,25,50wt%로 혼합한것 과 glass ceramics 분말에 potashborosilica-te glass 분말을 15, 30, 45, 60 wt% 로 배합하 여 doctor blade 법으로 green sheet를 제조하였다. green sheet 는 950~150$0^{\circ}C$로소성하여 기판의 특성을 평가하였다. 겉보기 기공율은 3.06~19,14%이었고, 전기적 특성으로 유전상수 는 3~5(100KHz)를 나타내었다.