• 제목/요약/키워드: AlN sheet

검색결과 87건 처리시간 0.026초

판재의 일축인장 소성불안정에 미치는 두께의 영향 (The Effects of Thickness on the Plastic Instability under Uniaxial Tension in Sheet Metal)

  • 한규택;강대민;구양;백남주
    • 한국정밀공학회지
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    • 제6권2호
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    • pp.58-64
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    • 1989
  • Plastic instability in uniaxial tension of commercial purity Al has been studied with the emphasis of effects of thickness in cold worked specimens and recrystallized specimens. The thickness change gave rise to change in stress state and the amount of strain localization in specimen after diffuse necking. Therefore the thickness of speci- men could control modes of plastic instability. Regardless of recrystallized or cold worked state, the necking mode changed from diffuse necking to local necking, at about 1.5 .approx. 2 mm in thickness.

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국부 표면개질된 알루미늄 합금 판재의 성형성 (Formability of Locally Surface-Modified Aluminum Alloy Sheets)

  • 이창길;김성준;이태호;박신상;한흥남
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2005년도 추계학술대회 논문집
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    • pp.299-300
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    • 2005
  • Surface friction welding (SFW) is a newly developed technology fur joining thin metal sheets, which utilizes friction between tool and weldment. In the present study, the 5052 and 1050 Al sheets were locally surface-modified using SFW technology. Formability of the locally surface-modified sheets was superior to that of the parent material. Yield or tensile strengths of the locally surface-modified specimens were lower then those of the parent material, but elongations of the locally surface-modified specimens were higher then that of the parent material.

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Plasma source ion implantations for shallow $p^+$/n junction

  • Jeonghee Cho;Seuunghee Han;Lee, Yeonhee;Kim, Lk-Kyung;Kim, Gon-Ho;Kim, Young-Woo;Hyuneui Lim;Moojin Suh
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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    • pp.180-180
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    • 2000
  • Plasma source ion implantation is a new doping technique for the formation of shallow junction with the merits of high dose rate, low-cost and minimal wafer charging damage. In plasma source ion implantation process, the wafer is placed directly in the plasma of the appropriate dopant ions. Negative pulse bias is applied to the wafer, causing the dopant ions to be accelerated toward the wafer and implanted below the surface. In this work, inductively couples plasma was generated by anodized Al antenna that was located inside the vacuum chamber. The outside wall of Al chamber was surrounded by Nd-Fe-B permanent magnets to confine the plasma and to enhance the uniformity. Before implantation, the wafer was pre-sputtered using DC bias of 300B in Ar plasma in order to eliminate the native oxide. After cleaning, B2H6 (5%)/H2 plasma and negative pulse bias of -1kV to 5 kV were used to form shallow p+/n junction at the boron dose of 1$\times$1015 to 5$\times$1016 #/cm2. The as-implanted samples were annealed at 90$0^{\circ}C$, 95$0^{\circ}C$ and 100$0^{\circ}C$during various annealing time with rapid thermal process. After annealing, the sheet resistance and the junction depth were measured with four point probe and secondary ion mass spectroscopy, respectively. The doping uniformity was also investigated. In addition, the electrical characteristics were measured for Schottky diode with a current-voltage meter.

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Al-1% Si층과 Ti-silicide층의 반응에 관한 연구 (A Study on the Reaction of Al-1% Si with Ti-silicide)

  • 황유상;백수현;송영식;조현춘;최진석;정재경;김영남;심태언;이종길;이상인
    • 한국재료학회지
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    • 제2권6호
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    • pp.408-416
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    • 1992
  • Single-Si 기판과 poly-Si 기판에 각각 Ti을 sputter한 후 RTA 처리하여 안정한 TiS$i_2$를 형성하였다. 그 위에 Si이 1% 첨가된 Al-1% Si을 600nm sputter한 후 후속 열처리로서 400-60$0^{\circ}C$ 에서 30분간 $N_2$분위기로 furnace어닐링을 실시하였다. 이렇게 준비된 각 시편에 대하여 면저항 측정, Auger분석, SEM 사진으로 Al-1% Si/TiS$i_2$이중층 구조에서 Ti-silicide의 열적 안정성을 살펴 보았고, EDS 분석과 X-ray 회절 peak 분석을 통하여 Al-1% Si 층과 TiS$i_2$층의 반응으로 생긴 석출물의 성분과 상을 조사하였다. 이로 부터 다음과 같은 결과를 얻었다 Single-Si 기관에서 형성한 TiS$i_2$층은 Al-1% Si 층과 55$0^{\circ}C$에서 완전히 반응하여 석출물을 형성하였고, poly-Si 기판에서 형성한 TiS$i_2$층은 Al-1% Si 층과 50$0^{\circ}C$에서 완전히 반응하여 석출물을 형성하였는데 전반적으로 기판이 poly-Si인 경우가 반응이 더 잘 일어났고, 석출물의 크기도 비교적 컸다. 이는 poly-Si에 존재하는 grain boundary로 인해 poly-Si에서 형성된 Ti-silicide 층이single-Si 기관에서 형성된 Ti-silicide 층보다 불안정하기 때문으로 생각된다. EDS 분석에 의하여 석출물은 Ti, Al, 그리고 Si로 이루어진 3상 화합물이라고 추정되었고, X-ray회절 분석에 의해 석출물은 Ti, Al, 그리고 Si간의 3상 화합물인 T$i_7$A$l_5$S$i_12$로 확인되었다.

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이종재료 Self-Piercing Rivets 접합부의 인장-전단 피로강도 (Tensile-Shear Fatigue Strength of Self-Piercing Rivets Joining Dissimilar Metal Sheets)

  • 강세형;김택영;오만진;김호경
    • 한국안전학회지
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    • 제30권4호
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    • pp.1-7
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    • 2015
  • Self-piercing riveting (SPR) process is gaining popularity due to its many advantages. The SPR does not require a pre-drilled hole and has capability to join a wide range of similar or dissimilar materials and combinations of materials. This study investigated the fatigue strength of self-piercing rivet joint with aluminum alloy (Al-5052) and steel (SPCC) sheets. Static and fatigue tests on tensile-shear specimens were conducted. From the static strength aspect, the optimal punching force for the specimen with upper SPCC (U.S) sheet and lower aluminum alloy(L.A) sheets was 34 kN. During static test the specimens fractured in pull-out fracture mode due to influence of plastic deformation of joining area. There was a relationship between applied load amplitude $P_{amp}$ and number of cycles N ; $P_{amp}=19588N_f^{-0.211}$ and $P_{amp}=4885N_f^{-0.083}$ for U.S-L.A and U.A-L.S specimens, respectively. U.A-L.S fatigue specimens failed due to fretting crack initiation around the rivet neck between upper and lower sheets.

Co-Deposition법을 이용한 Yb Silicide/Si Contact 및 특성 향상에 관한 연구

  • 강준구;나세권;최주윤;이석희;김형섭;이후정
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.438-439
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    • 2013
  • Microelectronic devices의 접촉저항의 향상을 위해 Metal silicides의 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 지난 수십년에 걸쳐, Ti silicide, Co silicide, Ni silicide 등에 대한 개발이 이루어져 왔으나, 계속적인 저저항 접촉 소재에 대한 요구에 의해 최근에는 Rare earth silicide에 관한 연구가 시작되고 있다. Rare-earth silicide는 저온에서 silicides를 형성하고, n-type Si과 낮은 schottky barrier contact (~0.3 eV)를 이룬다. 또한, 비교적 낮은 resistivity와 hexagonal AlB2 crystal structure에 의해 Si과 좋은 lattice match를 가져 Si wafer에서 high quality silicide thin film을 성장시킬 수 있다. Rare earth silicides 중에서 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 낮은 schottky barrier 응용에서 쓰이고 있다. 이로 인해, n-channel schottky barrier MOSFETs의 source/drain으로써 주목받고 있다. 특히 ytterbium과 molybdenum co-deposition을 하여 증착할 경우 thin film 형성에 있어 안정적인 morphology를 나타낸다. 또한, ytterbium silicide와 마찬가지로 낮은 면저항과 electric work function을 갖는다. 그러나 ytterbium silicide에 molybdenum을 화합물로써 높은 농도로 포함할 경우 높은 schottky barrier를 형성하고 epitaxial growth를 방해하여 silicide film의 quality 저하를 야기할 수 있다. 본 연구에서는 ytterbium과 molybdenum의 co-deposition에 따른 silicide 형성과 전기적 특성 변화에 대한 자세한 분석을 TEM, 4-probe point 등의 다양한 분석 도구를 이용하여 진행하였다. Ytterbium과 molybdenum을 co-deposition하기 위하여 기판으로 $1{\sim}0{\Omega}{\cdot}cm$의 비저항을 갖는 low doped n-type Si (100) bulk wafer를 사용하였다. Native oxide layer를 제거하기 위해 1%의 hydrofluoric (HF) acid solution에 wafer를 세정하였다. 그리고 고진공에서 RF sputtering 법을 이용하여 Ytterbium과 molybdenum을 동시에 증착하였다. RE metal의 경우 oxygen과 높은 반응성을 가지므로 oxidation을 막기 위해 그 위에 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, 진공 분위기에서 rapid thermal anneal(RTA)을 이용하여 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium silicides를 형성하였다. 전기적 특성 평가를 위한 sheet resistance 측정은 4-point probe를 사용하였고, Mo doped ytterbium silicide와 Si interface의 atomic scale의 미세 구조를 통한 Mo doped ytterbium silicide의 형성 mechanism 분석을 위하여 trasmission electron microscopy (JEM-2100F)를 이용하였다.

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Nonlocal dynamic modeling of mass sensors consisting of graphene sheets based on strain gradient theory

  • Mehrez, Sadok;Karati, Saeed Ali;DolatAbadi, Parnia Taheri;Shah, S.N.R.;Azam, Sikander;Khorami, Majid;Assilzadeh, Hamid
    • Advances in nano research
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    • 제9권4호
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    • pp.221-235
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    • 2020
  • The following composition establishes a nonlocal strain gradient plate model that is essentially related to mass sensors laying on Winkler-Pasternak medium for the vibrational analysis from graphene sheets. To achieve a seemingly accurate study of graphene sheets, the posited theorem actually accommodates two parameters of scale in relation to the gradient of the strain as well as non-local results. Model graphene sheets are known to have double variant shear deformation plate theory without factors from shear correction. By using the principle of Hamilton, to acquire the governing equations of a non-local strain gradient graphene layer on an elastic substrate, Galerkin's method is therefore used to explicate the equations that govern various partition conditions. The influence of diverse factors like the magnetic field as well as the elastic foundation on graphene sheet's vibration characteristics, the number of nanoparticles, nonlocal parameter, nanoparticle mass as well as the length scale parameter had been evaluated.

레이저 활성화에 의한 p형 Sic와 비합금 Mo 오믹 접합 (Characteristics of Non-alloyed Mo Ohmic Contacts to Laser Activated p-type SiC)

  • 이형규;이창영;송지헌;최재승;이재봉;김기호;김영석;박근형
    • 한국전기전자재료학회논문지
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    • 제16권7호
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    • pp.557-563
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    • 2003
  • SiC has been an useful material for the high voltage, high temperature, and high frequency devices, however, the required high process temperature to activate the implanted p-type dopants has hindered further developments. In this study, we report, for the first time, on the laser activation of implanted Al and non-alloyed Mo ohmic contacts and its application to MOSFET fabrication. The contact and sheet resistance measured from CTLM patterns have decreased by increasing laser power, and the lowest values are 3.9 $K\Omega$/$\square$ and 1.3 $\times$ 10$^{-3}$ $\Omega$-cm$^2$, respectively, at the power density of 1.45 J/cm$^2$ The n-MOSFETs fabricated on laser activated p-well exhibit well-behaved I-V characteristics and threshold voltage reduction by reverse body voltage. These results prove that the laser process for implant activation is an alternative low temperature technology applicable to SiC devices.

B, Nb및 Ti를 함유한 극저탄소강에서 탄화물 및 질화물의 석출이 집합조직에 미치는 영향(ll) (Effects of the Precipitation of Carbides and Nitrides on the Texture Structures in Extra Low Carbon Steel Sheets containing B, Nb and Ti(ll))

  • 이종무;윤국한;이도형
    • 한국재료학회지
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    • 제3권2호
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    • pp.131-139
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    • 1993
  • 극저탄소 알루미늄 킬드강내에 합금원소로 첨가된 Al, Ti, Nb, B등은 열처리 공정중 질화물이나 탄화물로 석출되어 강의 재결정집합조직을 변화시킴으로써 강판재의 디입드로잉 특성에 결정적인 영향을 미친다. 본 연구에서는 Ti및 Nb를 단독으로 또는 동시에 첨가한 데 이어, B, P, Si 및 Mn등을 추가로 첨가한 극저탄소 고강도 강판의 집삽조직에 미치는 질화물, 탄화물과 같은 미세 석출물의 영향을 TEM, SEM, 광학현미경분석에 의하여 조사하였다. Nb 및 Ti를 동시에 첨가한 강에서는 미세한 N$b_2$C 및 T$i_2$AIN가 주로 석출되는 반면, Nb를 단독으로 첨가한 강에서는 미세한 AIN 및 조대한 BN이 석출되고,Ti를 단독으로 첨가한 강에서는 비교적 조대한 T${i_4}{N_3}$및 조대한 ${N_10}{N_22}$/T$i_68$이 석출되는 것으로 관찰되었다. 또한 이러한 탄질화물들의 석출에 의하여 세 강이 서로 다른 결정입도를 나타내는데, 결정입도는 Nb 및 Ti동시첨가강과 Nb단독첨가강이 서로 비슷하고, Ti단독첨가강이 가장 큰 것으로 나타났다.

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Investigation of the observed solar coronal plasma in EUV and X-rays in non-equilibrium ionization state

  • Lee, Jin-Yi;Raymond, John C.;Reeves, Katharine K.;Shen, Chengcai;Moon, Yong-Jae
    • 천문학회보
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    • 제43권1호
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    • pp.53.1-53.1
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    • 2018
  • During a major solar eruption, the erupting plasma is possibly out of the equilibrium ionization state because of its rapid heating or cooling. The non-equilibrium ionization process is important in a rapidly evolving system where the thermodynamical time scale is shorter than the ionization or recombination time scales. We investigate the effects of non-equilibrium ionization on EUV and X-ray observations by the Atmospheric Imaging Assembly (AIA) on board Solar Dynamic Observatory and X-ray Telescope (XRT) on board Hinode. For the investigation, first, we find the emissivities for all the lines of ions of elements using CHIANTI 8.07, and then we find the temperature responses multiplying the emissivities by the effective area for each AIA and XRT passband. Second, we obtain the ion fractions using a time-dependent ionization model (Shen et al. 2015), which uses an eigenvalue method, for all the lines of ion, as a function of temperature, and a characteristic time scale, $n_et$, where $n_e$ and t are density and time, respectively. Lastly, the ion fractions are multiplied to the temperature response for each passband, which results in a 2D grid for each combination of temperature and the characteristic time scale. This is the set of passband responses for plasma that is rapidly ionized in a current sheet or a shock. We investigate an observed event which has a relatively large uncertainty in an analysis using a differential emission measure method assuming equilibrium ionization state. We verify whether the observed coronal plasmas are in non-equilibrium or equilibrium ionization state using the passband responses.

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