• 고려인삼학회:학술대회논문집
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• 고려인삼학회 2002년도 학술대회지
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• pp.502-508
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• 2002

The strains of Panax ginseng C.A. Mey., P. quinquefolius L. and selected strains P. ginseng-B, P.ginseng-A, P. quinquefolius-C were investigated. Activities of SOD, catalase and peroxydase were determined by methods of Fridovich et al. (1979), Komov et al.(1975), Bovaird et al.(1982) respectively. Activities of SOD, catalase, peroxydase were investigated every day 5 in cycle of cultivation. For P. ginseng it was the 35 days, P. quinquefolius the 70 days, P. quinquefolius-C 90 days. P. ginseng-B 90 days, P. ginseng-A 60 days. The P. quinquefolius, P. quinquefolius-C, P. ginseng-B had clear differentiation and developed tracheid elements, which are absent in strain of P. ginseng. The peaks of protein content for P. ginseng (4.5 units/g) and for P. quinquefolius (3.5 units/g) were on day 10 and remained unchanged till the last cultivation. The strain P. ginseng-A had two peaks of protein content (2.5 mg/g) on day 15 and on day 30. For P. ginseng-B strain these peaks were on day 5 and day 40 (3.5 mg/g). Peroxydase activity peak (60 units/g) in P. ginseng strain was on day 10. This activity in P. ginseng-B had two peaks on day 15 and day 35 and reached 95 units/g , increasing to 150 units/g to day 80. In strain of P. ginseng-A was only one maximum of this activity -130 units/g on day 45. In P. quinquefolius peroxydase activity was 103 units/g on day 40, increasing to 135 units/g to day 90. For P. quinquefolius-C this activity peak was 136 units/g on day 60. Peroxydase activities for the upper and lower layers of biomass was different and varied considerably from 28-35 units/g in lower to 270-290 units/g for upper layer. The SOD activity had two peaks in P. ginseng strain the 80 units/g and the 70 units/g on day 20 and day 35 respectively. Activity of SOD in P. quinquefolius strain reached 53 units/g on day 40 and increased up to 83 units/g to day 60.The similar increase of SOD activity was marked for P. ginseng-B to 85 units/g on day 90. In P. ginseng strain the 6 molecular isoforms SOD was defined. One of them with RfO,6 was determined in all days of cycle, three other (Rf-0.43; 0.54;0.80) only on day 10 and day 20. The isoform of SOD with Rf-0,29 was detected only on day 10 and with Rf-0,35 only on day 35. The catalase activity decreased in all strains to the last days of cultivation. The changes of SOD, catalase and peroxydase activities reflect the differences between the strains of Panax ginseng and Panax quinquefolius and their selected forms. The correlation between maximum life span of strains and activities of their antioxydant enzymes were detected.

• 한국진공학회지
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• 제17권6호
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• pp.518-522
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• 2008

반도체 집적도의 비약적인 발전으로 박막은 더욱 다층화 되고 선폭은 더욱 미세화가 진행되었다. 이러한 악조건에서 소자의 집적도를 계속 향상시키기 위하여 많은 연구가 진행되고 있다. 특히 소자 집적도 향상으로 금속 배선 공정에서는 선폭의 미세화와 배선 길이 증가로 인한 RC지연이 발생하게 되었다. 이를 방지하기 위하여 Al보다 비저항이 작은 Cu를 배선물질로 사용하여야 하며, 또한 일부 공정에서는 이미 사용하고 있다. 그러나 Cu를 금속배선으로 사용하기 위해 해결해야 할 가장 큰 문제점은 저온에서 쉽게 Si기판과 반응하는 문제이다. 현재까지 본 실험실에서는 tungsten (W)을 주 물질로 W-C-N (tungsten- carbon - nitrogen) 확산방지막을 증착하여 연구를 하였으며, $\beta$-ray, XRD, XPS 분석을 통하여 고온에서도 Cu의 확산을 효과적으로 방지한다는 연구 결과를 얻었다. 이 연구에서는 기존 연구에 추가적으로 W-C-N 확산방지막의 표면을 Nano-Indenter System을 이용하여 확산방지막 표면강도 변화를 분석하여 확산방지막의 물성 특성을 연구하였다. 이러한 연구를 통하여 박막내 불순물인 질소가 포함된 박막이 고온 열처리 과정에서 보다 안정적인 표면강도 변화를 나타내는 연구 결과를 얻었으며, 이로부터 박막의 물성 분석을 실시하였다.

• 한국진공학회지
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• 제11권3호
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• pp.183-188
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• 2002

지금까지 주로 사용해 오던 TMA(trimethylaluminum, AI$(CH_3)_3)$와 $H_2O$를 사용하여 ALD(Atomic Layer Deposition)법으로 증착시킨 AI$(CH_3)_3)$막내의 $OH^{-}$기는 AI$(CH_3)_3)$의 우수한 물성을 악화시키는 불순물 역할을 하므로, 이를 개선하기 위하여 본 연구에서는 TMA와 오존(ozone, $O_3$)을 이용하여 AI$(CH_3)_3)$막을 증착한 후, 산화제 소스로 $H_2O$와 $O_3$을 각각 사용했을 때 그것들이 AI$(CH_3)_3)$막의 유전적 특성에 끼치는 효과에 관하여 비교 조사하였다. XPS 분석결과 $O_3$를 사용한 AI$(CH_3)_3)$막은 $H_2O$를 사용할 때와는 다르게 $OH^{-}$기가 감소됨을 관찰할 수 있었다. 화학적 안정성(chemical inertness)의 척도가 되는 wet 에칭율 또한 $O_3$를 사용한 AI$(CH_3)_3)$막의 경우가 더욱 우수하게 나타났다. TiN을 상부전극으로 한 MIS (metal-insulator-silicon) capacitor 구조로 제작된 AI$(CH_3)_3)$막의 경우 $H_2O$를 사용한 경우 보다 $O_3$를 사용한 경우에 누설전류밀도가 더 낮았고, 절연특성이 더 우수하였으며, $H_2O$보다 $O_3$를 사용했을 때 C-V 전기적이력(hystersis) 곡선의 편차(deviation)가 감소하는 것으로 보아 전기적 특성이 더 향상되었음을 알 수 있었다.

• Bulletin of the Korean Chemical Society
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• 제26권11호
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• pp.1807-1818
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• 2005

New PPV based conjugated polymers, containing terphenyl units, were prepared as the electroluminescent (EL) layer in light-emitting diodes (LEDs). The prepared polymers, poly[2,5-bis(4-(2-etylhexyloxy)phenyl)-1,4-phenylenevinylene] (BEHP-PPV), poly[2-(2-ethylhexyloxy)-5-(4-(4-(2-etylhexyloxy)phenyl)phenyl)-1,4-phenylenevinylene] (EEPP-PPV) and poly[2-(2-ethylhexyloxy)-5-(9,9-bis(2-etylhexyl)fluorenyl)-1,4 phenylenevinylene] (EHF-PPV), were soluble in common organic solvents and used as the EL layer in double layer light-emitting diodes (LEDs) (ITO/PEDOT/polymer/Al). The polymers were prepared by the Gilch reaction. The number-average molecular weight $(M_n)$, weight-average molecular weight $(M_w)$, and the polydispersities (PDI) of these polymers were in the range of 9000-58000, 27000-231000, 2.9-3.9, respectively. These polymers have quite good thermal stability with decomposition starting above 320-350. The polymers show photoluminescence (PL) with maximum peaks at around 526-562 nm (exciting wavelength, 410 nm) and blue EL with maximum peaks at around $\lambda_{max}$ = 526-552 nm. The current-voltageluminance (I-V-L) characteristics of polymers show turn-on voltages of 5 V. Even though both of EEPP-PPV and BEHP-PPV have the same terphenyl group in the repeating unit, EEPP-PPV with directly substituted alkoxy group in the back bone has longer effective conjugation length than BEHP-PPV, and exhibits red shift in the PL spectra. Both of EEPP-PPV and EHF-PPV have ter-phenyl units and directly substituted alkoxy group in back bone. EHF-PPV with fluorenyl unit attached to the PPV backbone has shorter effective conjugation length than EEPP-PPV with biphenyl unit, and exhibits blue shift in the PL spectra.

• 대한소아치과학회지
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• 제30권3호
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• pp.530-539
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• 2003

본 연구에서는 4종의 복합레진(Palpique Estelite, Filtek P 60, Spectrum, Charisma)을 선택하였다. 각 제품당 5개의 시편을 제작하여 무게 측정을 한 후, NaOH 용액에 2주 동안 보관하였고 1.23% HCl로 중화하고 세척, 건조시켜 무게 측정을 하였다. 주사전자현미경과 공초점 레이저 주사현미경으로 복합레진의 분해층 표면과 분해깊이를 관찰하였고, 분해 저항성은 용액내로 용출된 Si, Al, Ba의 농도를 근거로 평가하여 다음과 같은 결과를 얻었다. 1. 각 제품의 무게손실량은 Palpique Estelite가 가장 많았고, Filtek P 60, Charisma, Spectrum 순이었다. 2. 각 제품의 표면하 분해층 깊이는 Filtek P 60이 가장 깊었고, Charisma, Palpique Estelite, Spectrum 순이었다. 3. Si 용출량은 Charisma가 가장 많았고, Spectrum, Palpique Estelite, Filtek P 60 순이었다. 4. 무게손실과 분해층 깊이 사이에는 높은 상관관계를 보였다(r=0.704, p<0.05). 5. 주사전자현미경 관찰시 NaOH용액에 보관한 후 레진 기질과 충전제 사이의 결합의 파괴 양상인 분해층 표면을 관찰할 수 있었고 공초점 레이저 현미경 관찰시 레진의 분해층 깊이를 관찰할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.66-66
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• 2008

Most of the properties of ITO films depend on their substrate nature, deposition techniques and ITO film composition. For the display panel application, it is normally deposited on the glass substrate which has high strain point (>575 degree) and must be deposited at a temperature higher than $250^{\circ}C$ and then annealed at a temperature higher than $300^{\circ}C$ in order to high optical transmittance in the visible region, low reactivity and chemical duration. But the high strain point glass (HSPG) used as FPDs is blocking popularization of large sizes FPDs because it is more expensive than a soda lime glass (SLG). If the SLG could be used as substrate for FPDs, then diffusion of Na ion from the substrate occurs into the ITO films during annealing or heat treatment on manufacturing process and it affects the properties. Therefore proper care should be followed to minimize Na ion diffusion. In this study, we investigate the electrical, optical and structural properties of ITO films deposited on the SLG and the Asahi glass(PD200) substrate by rf magnetron sputtering using a ceramic target ($In_2O_3:SnO_2$, 90:10wt.%). These films were annealed in $N_2$ and air atmosphere at $400^{\circ}C$ for 20min, 1hr, and 2hrs. ITO films deposited on the SLG show a high electrical resistivity and structural defect as compared with those deposited on the PD200 due to the Na ion from the SLG on diffuse to the ITO film by annealing. However these properties can be improved by introducing a barrier layer of $SiO_2$ or $Al_2O_3$ between ITO film and the SLG substrate. The characteristics of films were examined by the 4-point probe, FE-SEM, UV-VIS spectrometer, and X-ray diffraction. SIMS analysis confirmed that barrier layer inhibited Na ion diffusion from the SLG.

• 한국광학회지
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• 제24권5호
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• pp.224-230
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• 2013

레이저 리프트 오프(Laser Lift-Off: LLO)는 수직형 LED 제조를 위하여 GaN 또는 AlN 박막을 사파이어 웨어퍼로부터 레이저를 이용하여 제거하는 공정으로 광원, 레이저의 출력 파워를 조절해주는 감쇠기, 빔의 형태를 잡아주는 빔 성형 광학계, 원하는 빔 사이즈를 만들어 주고 빔을 균일하게 섞어주는 빔 균일 광학계, 기판에 투사 이전에 빔을 한번 잘라주는 조리개 부분과 마스크 단에서 잘린 빔을 기판에 투사해주는 투사렌즈 부분으로 구성되어 있다. 본 논문에서는 LLO 시스템을 구성하고 있는 광학계 중 감쇠기와 투사렌즈 부분의 설계 및 분석을 진행하였다. 투사렌즈의 $7{\times}7mm^2$ 빔 사이즈 구현을 위하여 광학 설계 프로그램인 지맥스를 통해 설계 및 초점심도를 분석하였으며, 조명 설계 프로그램인 라이트 툴을 사용하여 빔 사이즈 및 균일도를 분석하였다. 성능 분석 결과 사각형 빔의 크기 $6.97{\times}6.96mm^2$, 균일도 91.8%, 초점심도 ${\pm}30{\mu}m$를 확인하였다. 또한 고출력의 엑시머레이저의 빔 강도를 감쇠시키기 위한 장치인 감쇠기의 투과율을 높이기 위하여 에센설 맥클라우드 코팅 프로그램을 사용하여 유전체 코팅을 실시한 결과 총 23층의 박막과 s 편광의 입사각도 $45{\sim}60^{\circ}$에서 10-95%의 투과율을 확인 할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.289-289
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• 2013

While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.

• 한국전기전자재료학회논문지
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• 제31권3호
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• pp.165-170
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• 2018

In this study, double-layered TCO (transparent conductive oxide) films were produced by depositing two distinct TCO materials: $SnO_2$ works as an n-type layer and ITO (indium-doped tin oxide) serves as a transparent conductor. Both transparent conductive oxide-films were sequentially deposited by sputtering. The electrical and optical properties of single-layered TCO films ($SnO_2$) and double-layered TCO ($ITO/SnO_2$) films were investigated. A TCO-embedding photodetector was realized through the formation of an $ITO/SnO_2/p-Si/Al$ layered structure. The remarkably high rectifying ratio of 400.64 was achieved with the double-layered TCO device, compared to 1.72 with the single-layered TCO device. This result was attributed to the enhanced electrical properties of the double-layered TCO device. With respect to the photoresponses, the photocurrent of the double-layered TCO photodetector was significantly improved: 1,500% of that of the single-layered TCO device. This study suggests that, due to the electrical and optical benefits, double-layered TCO films are effective for enhancing the photoresponses of TCO photodetectors. This provides a useful approach for the design of photoelectric devices, including solar cells and photosensors.

• Advances in concrete construction
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• 제10권4호
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• pp.357-367
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• 2020

The impulse of this paper is to examine the influence of unsteady flow comprising of Eyring-Powell nanofluid over a stretched surface. This work aims to explore efficient transfer of heat in Eyring-Powell nanofluid with bio-convection. Nanofluids possess significant features that have aroused various investigators because of their utilization in industrial and nanotechnology. The influence of including motile microorganism is to stabilize the nanoparticle suspensions develop by the mixed influence of magnetic field and buoyancy force. This research paper reveals the detailed information about the linearly compressed Magnetohydrodynamics boundary layer flux of two dimensional Eyring-Powell nanofluid through disposed surface area due to the existence of microorganism with inclusion the influence of non- linear thermal radiation, energy activation and bio-convection. The liquid is likely to allow conduction and thickness of the liquid is supposed to show variation exponentially. By using appropriate similarity type transforms, the nonlinear PDE's are converted into dimensionless ODE's. The results of ODE's are finally concluded by employing (HAM) Homotopy Analysis approach. The influence of relevant parameters on concentration, temperature, velocity and motile microorganism density are studied by the use of graphs and tables. We acquire skin friction, local Nusselt and motil microorganism number for various parameters.