• Journal of Sensor Science and Technology
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• v.14 no.3
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• pp.160-168
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• 2005

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_{2}O_{3}$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_{2}O_{3}$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}1016cm^{-3}$ and $299cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=3.3973 eV-($2.69{\times}10^{-4}$ eV/K)$T^{2}$/(T+463K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{6}$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n = 1.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.177-177
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• 2010

고효율 비정질 실리콘 박막 태양전지 제작을 위해서는 광파장대에서 optical confinement 능력을 최대화할 수 있는 기술이 필수적이다. 효율적인 photon trapping을 위해서는 back reflector를 사용하거나 전면전극인 투명전도성막의 표면에 요철을 형성하여 포획된 태양광의 내부 반사를 증가시키거나 전면 투명전극에서 반사를 감소시켜 태양광의 travel length를 증가시키는 방법이 일반적이며, 이를 통해 흡수층의 효율을 최대화할 수 있다. 이 중 전면전극으로 사용되는 투명전도성막은 불소가 도핑된 tin-oxide가 주로 사용되었으나, 최근 들어 Al이 도핑된 산화아연막을 이용한 비정질 실리콘 박막 태양전지 개발에 대한 연구도 활발히 진행되고 있다. 투명전극 증착후 표면의 유효면적을 증가시키기 위해 염산 용액을 이용하여 표면 텍스쳐링을 수행한다. 그후 흡수층인 p-i-n 층을 플라즈마 화학기상증착법을 이용하여 형성하는 것이 일반적이다. 이때 표면처리 된 투명전극은 수소플라즈마에 대해 특성이 변하지 않아야 고효율 비정질 실리콘 박막 태양전지 제조에 적용될 수 있다. 본 연구에서는 표면처리 된 AZO 투명전극의 수소플라즈마에 의한 특성 변화에 대해 고찰하였다. 먼저 AZO 투명전극은 스퍼터링 공정을 적용하여 $1\;{\mu}m$두께로 증착하였고, 0.5 wt%의 HCl 용액을 이용하여 습식 식각을 수행하였다. 수소플라즈마 처리 조건은 $H_2$ flow rate 30 sccm, working pressure 20 mtorr, RF power 300 W, Temp $60^{\circ}C$ 이며 3분간 진행하였다. 표면형상은 수소플라즈마 전 후에는 큰 차이를 보이지 않았으며 AZO의 grain size는 각각 220 nm, 210 nm로 관찰되었다. 투명전극의 가장 중요한 특성인 가시광선 영역에서의 투과도는 수소플라즈마 처리전에는 90 % 이상의 투과도를 보였으나, 수소플라즈마 처리 후에는 85 %로 약간 저하된 특성을 보였다. 그러나 이는 박막 태양전지용 전면전극으로 사용하기 위한 투과도인 80 % 이상을 만족하는 결과로, 비정질 박막 실리콘 태양전지 제작에 사용될 수 있다. 또 하나의 중요한 특성인 Haze factor 역시 수소플라즈마 처리 전 후 모두 10 이상의 값을 나타냈다. 하지만 고효율 실리콘 박막 태양전지에 적용하기 위해서는 Haze factor를 증가시키는 공정 개발에 대한 추가 연구가 필요하다.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1594-1596
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• 2004

Film bulk acoustic resonator (FBAR) devices which adopt a membrane-type configuration are fabricated by a novel process. In contrast to the conventional FBAR structure, the newly fabricated resonator doesn't employ any supporting layer below or above it, so that the properties of piezoelectric layer are not influenced by the bottom electrode material. FBAR devices with Mo/AlN/Metal configuration are also fabricated. The frequency response characteristics ($S_{11}$) of the devices fabricated using the proposed process are compared with those of the conventional devices. The return losses are also estimated, in terms of the kind and thickness of bottom electrode materials.

• Journal of Information Display
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• v.9 no.3
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• pp.16-22
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• 2008

A novel class of conjugated dendritic molecules bearing N-hexyl-substituted carbazoles as peripheral groups and various conjugative aromatic cores was synthesized through Heck coupling and the Horner-Emmons reaction. A multilayered structure of ITO/PEDOT:PSS (30 nm)/emitting material (50 nm)/BCP (10 nm)/$Alq_3$ (10 nm)/LiF (1 nm)/Al (100 nm) was employed to evaluate the synthesized dendritic materials. The electroluminescence spectrum of the multilayered device made of 3Cz predominantly exhibited blue emissions. Similar emissions were observed in the PL spectra of it's the device's thin film. The multilayered devices made of 3Cz, 3BCz, and 4BCz showed luminance values of 6,250 cd $m^{-2}$ at 24 V, 3,000 cd $m^{-2}$ at 25 V, and 1,970 cd $m^{-2}$ at 36 V, respectively. The smallest molecule, 3Cz, which bore three carbazole peripheral groups, exhibited a blue-like emission with CIE 1931 chromaticity coordinates of x = 0.17 and y = 0.21.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.2
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• pp.119-130
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• 1994

To deposit silicon on borosilicate glass substrates, 18 different substrate combinations were investigated because of the difficulty of direct deposition of silicon. Sucessful results were obtained from Al-and Mg-treated glass and furnace annealed sputtered silicon deposited glass substrates. A continuous silicon thin film on a large area substrates was obtained in the temperatures ranges from $420^{\circ}C to 520^{\circ}C$. These thin films might be applied to lower the cost of solar cells and solar cell modules.

• Progress in Superconductivity
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• v.10 no.1
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• pp.35-39
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• 2008

By using the hybrid physical-chemical vapor deposition (HPCVD) technique, we have fabricated $MgB_2$ thick films on $Al_{2}O_3$ substrates with various impurity layers of Ni, Ti, and SiC. We have found a significant enhancement of the critical current density ($J_c$) for $MgB_2$ films grown on impurity layered substrates, indicating that additional impurity layers were provided as possible pinning sites by chemical doping in $MgB_2$ films. All samples doped by Ni, Ti, and SiC were observed to have high superconducting transition temperatures of 39 - 41 K. The $J_c$ of $MgB_2$ films grown on SiC impurity layered substrates showed three times higher than that of undoped films at high magnetic fields above 1 T.

• Journal of Information Display
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• v.5 no.4
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• pp.12-17
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• 2004

A series of statistical random copolymers of dioctylfluorene (DOF) and 3,4-ethylenedioxythiophene (EDOT) were synthesized by Ni (0) mediated polymerization and their light-emitting properties were compared with poly (9,9-di-n-octylfluorene) (PDOF). The synthesized polymers were characterized using UV-vis spectroscopy, TGA, photoluminescence (PL) & electroluminescence (EL) spectroscopy and by conducting molecular weight studies. The resulting polymers were found to be thermally stable and readily soluble in organic solvents. The UV-visible absorption and PL emission spectra of the copolymers were gradually red-shifted as the fraction of EDOT in copolymers increased. Light-emitting devices were fabricated in an ITO (indium-tin oxide)/PEDOT/polymer/Ca/Al configuration. Interestingly, the EL spectra of these devices were similar to the PL spectra of the corresponding polymer film. However, the EL devices constructed from the copolymer showed more than 10 times higher efficiency level than the devices constructed from the PDOF homopolymer. This higher efficiency is possibly the result of better charge carrier balance in the copolymer systems due to the lower HOMO levels of the copolymers in comparison to that of PDOF homopolymer.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.8 no.4
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• pp.382-389
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• 1997

We present the results on the applicability of the polycrystalline AIN thin films for a surface acoustic wave filter operating at 800 MHz frequency. The films show the FWHM of 3 .deg. from th X-ray rocking curve, which indicates that the c-axis of the films is pre- ferentially oriented along the growth direction. The fabricated band pass filters exhibit the center frequency of 865 MHz with 3dB band-width of 45 MHz. From the measured frequency response, the electro-mechanical coupling constant of 0.8% and the SAW velocity of 5,709 m/s are obtained. Thus, we conclude that the sputtered AIN films are feasible for the fabrication of uper UHF band SAW filters.

• Corrosion Science and Technology
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• v.7 no.1
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• pp.27-34
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• 2008

In industrial and fluid handling systems, frequently the protective film forming materials suffer from severe corrosion due to microbial effects. As an example, various micro-organisms, including bacteria, exist in seawater normally fed to power and desalination plants. Unless seawater intakes are properly disinfected to control these microbial organisms, biological fouling and microbial induced corrosion (MIC) will be developed. This problem could destroy metallic alloys used for plant construction. Seawater intakes of cogeneration plants are usually disinfected by chlorine gas or sodium hypochlorite solution. The dose of disinfectant is designed according to the level of contamination of the open seawater in the vicinity of the plant intake. Higher temperature levels, lower pH, reduced flow velocity and oxidation potential play an important role in the enhancement of microbial induced corrosion and bio-fouling. This paper describes, in brief, the different types of bacteria, mechanisms of microbiological induced corrosion, susceptibility of different metal alloys to MIC and possible solutions for mitigating this problem in industry. A case study is presented for the power plant steam condenser at Al-Taweelah B-station in Abu Dhabi. The study demonstrates resistance of Titanium tubes to MIC.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.1
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• pp.15-21
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• 2013

In this paper, a MEMS tunable capacitor was successfully designed and fabricated using an aluminum nitride film and a gold suspended membrane with two air gap structure for commercial RF applications. Unlike conventional two-parallel-plate tunable capacitors, the proposed tunable capacitor consists of one air suspended top electrode and two fixed bottom electrodes. One fixed and the top movable electrodes form a variable capacitor, while the other one provides necessary electrostatic actuation. The fabricated tunable capacitor exhibited a capacitance tuning range of 375% at 2 GHz, exceeding the theoretical limit of conventional two-parallel-plate tunable capacitors. In case of the contact state, the maximal quality factor was approximately 25 at 1.5 GHz. The developed fabrication process is also compatible with the existing standard IC (integrated circuit) technology, which makes it suitable for on chip intelligent transceivers and radios.