• 한국결정성장학회지
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• 제9권6호
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• pp.553-557
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• 1999

MOCVD로 성장된 $A1_x$$Ga_{1-x}$N/GaN 박막의 광학적 특성을 이해하기 위하여 실온에서 광발광(PL), 광전류)PC), 광단속에 의한 광권도도(PPC) 측정하였다. PL과 PC로 결정된 $A1_x$$Ga_{1-x}$N/GaN 박막의 광학적 에너지 간격은 3.7eV 이었다. PC측정 시 빛을 시료의 위쪽에서 조사시켰을 때에는 3.70, 3.40eV의 peak와 2.2eV 근방에서 broad한 peak가 관측되었다. 그러나 기판 쪽에서 빛을 조사시켰을 때의 PC 스펙트럼은 2.2eV 근방에서 broad한 peak와 3.43eV peak 만을 볼 수 있었다. PPC실험에서 관측된 photocurrent quenching과 비정상적인 PPC현상은 GaN 띠간격내에 형성된 전위나 vacancy 등의 결정결함 준위내에 전자들이 포획되고 오랫동안 포화되어 있다가 다시 방전되는 현상으로 보인다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.19-22
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• 1997

The surface modificaion of alumina by $Al_2$O$_3$/SiC nanocomposite coating was studied in terms of processing and microstructure. A powder slurry of 5 vol% SiC composition was dipcoated onto presintered alumina bodies and pressurelessly sintered at 1$700^{\circ}C$ for 2 h in $N_2$. The used of organic binder and plasticizer in the slurry preparation, and the control of the density of presintered alumina body were found to be necessary to avoid cracking and warping during processing. The nanocomposite coating well bonded to the alumina body with thickness about 110 ${\mu}{\textrm}{m}$. The average grain size of coating (2 ${\mu}{\textrm}{m}$) was much finer than that of alumina body (13 ${\mu}{\textrm}{m}$). Fracture surface observations revealed mostly transgranular fracture for the coating, whereas intergranular fracture for the alumina body. Some pores (about 6%) were observed in the coating layer, although the alumina body showed fully dense microstructure.

• 한국결정성장학회지
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• 제9권2호
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• pp.212-216
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• 1999

SiC(3C) 광다이오드는 p-형 Si 위에 tetramethylsilane (TMS)를 열분해아여 화학기상증착법으로 성장된 SiC(3C) 에피층을 성장하여 제작되었다. SiC(3C)의 전기적 특성은 홀 측정(Hall measurement) 및 전류-전압(I-V) 특성으로 조사되었다. SiC(3C) 에피층의 전도형은 n-형이었다. 저항성 접촉은 마스크 (shadow-mask)를 통해서 Al을 열증착하여 형성하였다. SiC(3C)광다이오드의 광학적 이득(photovoltaic detection)를 해석하기 위하여 SiC(3C) 에피층의 Spectral response (SR)를 전기적 변수(electrical parameter) 및 광다이오드의 기하학적 구조(geometric structure)를 고려하여 계산하였다. 적절히 선정된 변수들로부터 계산된 SR의 최대값은 550 nm에서 약 0.75이었고, 파장영역 400~600 nm 사이에서 청색 및 근자외선 광검지기로서 매우 유용하다.

• 한국표면공학회지
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• 제34권5호
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• pp.435-444
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• 2001

WC-( $Ti_{1-x}$ A $l_{x}$) N coatings of constant changing Al concentration were deposited on S45C substrates by high-ionization sputtered PVD method. The Al concentration could be controlled by using evaporation source for Al and fixing the evaporation rate of the metals (i.e, WC- $Ti_{0.86}$A $l_{0.14}$N, WC- $Ti_{0.72}$A $l_{0.28}$N, and WC- $Ti_{0.58}$A $l_{0.42}$N). The corrosion behavior of WC-( $Ti_{1-x}$ A $l_{x}$)N coatings in a deaerated 3.5% NaCl solution was investigated by electrochemical corrosion tests and surface analyses. The measured galvanic corrosion currents between coating and substrate indicated that WC- $Ti_{0.72}$A $l_{0.28}$N coating showed the best resistance of the coating tested. The results of potentiodynamic polarization tests showed that the WC- $Ti_{0.72}$A $l_{0.28}$N coating deposited with 32W/c $m^2$ of Al target revealed higher corrosion resistance. This indicated that the WC- $Ti_{0.72}$A $l_{0.28}$N coating is effective in improving corrosion resistance. In EIS, the WC- $Ti_{0.72}$A $l_{0.28}$N coating showed one time constant loop and increased a polarization resistance of coating ( $R_{coat}$) relative to other samples. Compositional variations of WC-( $Ti_{1-x}$ A $l_{x}$)N coatings were analyzed by EDS and XRD analysis was performed to evaluate the crystal structure and compounds formation behavior. Surface morphologies of the films were observed using SEM and AFM. Scratch test was performed to measure film adhesion strength.strength. adhesion strength.strength.

• 한국재료학회지
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• 제10권9호
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• pp.624-628
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• 2000

표면 탄성과 디바이스의 전극재료로 사용되는 Al-%Cu(4000$\AA$)/tungsten nitride 박막을 magnetron sputtering 법으로 제조하고 전기저항을 평가한 비정질상의 tungsten nitride 박막을 제조할 수 있었고, 비정질 형성을 위해 질소비(R =$N_2$/(Ar+$N_2$)가 10~40% 정도 필요하다. Tungsten nitride 박막의 잔류응력은 비정질이 형성되면서 급격히 감소되었다. 이러한 비정질 박막위에 Al-1%Cu 합금막이 형성되었다. 다층막은 453K에서 4시간 동안 열처리함으로써 $3.6{\mu}{\Omega}-cm$의 저항을 나타냈는데, 이는 박막내 결정립 성장과 결함의 감소에 기인하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.53-60
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• 2014

Different kinds of post-deposition annealing (PDA) by a rapid thermal process (RTP) are used to enhance the field-effect passivation of $Al_2O_3$ film in crystal Si solar cells. To characterize the effects of PDA on $Al_2O_3$ and the interface, metal-insulator semiconductor (MIS) devices were fabricated. The effects of PDA were characterized as functions of RTP temperature from $400{\sim}700^{\circ}C$ and RTP time from 30~120 s. A high temperature PDA can retard the passivation of thin $Al_2O_3$ film in c-Si solar cells. PDA by RTP at $400^{\circ}C$ results in better passivation than a PDA at $400^{\circ}C$ in forming gas ($H_2$ 4% in $N_2$) for 30 minutes. A high thermal budget causes blistering on $Al_2O_3$ film, which degrades its thermal stability and effective lifetime. It is related to the film structure, deposition temperature, thickness of the film, and annealing temperature. RTP shows the possibility of being applied to the PDA of $Al_2O_3$ film. Optimal PDA conditions should be studied for specific $Al_2O_3$ films, considering blistering.

• 한국세라믹학회지
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• 제29권7호
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• pp.511-516
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• 1992

In this study, SiC powder and Si powder were used as the raw materials. Mixture was prepared with addition of Al2O3 and Fe2O3 at 0.1~0.5wt% respectively. After this step, the mixture was pressed and nitrided for 30 hrs at 140$0^{\circ}C$ under NH3-N2 atmosphere. Mechanical properties of sintered specimens were investigated from measurement of porosity, bulk density and three point bending test. nitration reaction extent was observed at the change of mass before and after reaction, and the microstructure and the change of $\alpha$-Si3N4 and $\beta$-Si3N4 were observed by XRD and SEM. In the current work, the results are as follows 1. When Fe2O3 added, the nitridation increased with the content of Fe2O3, and the bending strength was increased from 0.1 wt% to 0.3 wt%, and decreased to 0.5 wt%. 2. When Al2O3 added, the nitridation and the bending strength increased little by little with the content of Al2O3 3. The bending strength of the specimen added with Fe2O3 were higher than that with Al2O3. Because the specimens contained Fe2O3 had much more the whisker type crystal of Si3N4 contributing to strength than contained Al2O3.

• Bulletin of the Korean Chemical Society
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• 제32권8호
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• pp.2537-2543
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• 2011

A self-assembled Al-bridged diiminopyridine-based ligand (3) was synthesized and characterized by FT-IR, ESI-MS and NMR spectroscopy. Electron spectral titrations were performed to confirm the formation of a novel trinuclear bis(imino)pyridyl iron(II) complex (4) upon addition of $FeCl_2$ into Al-bridged ligand 3 in methanol solution. Simultaneously, a typical bis(imino)pyridine-iron(II) complex (2) was synthesized and fully characterized. The X-ray crystal study of the iron(II) complex 2 disclosed a five-coordinate, distorted square-pyramidal structure with the tridentate N^N^N ligand and chlorides. The optimal molecular structure of 4 was obtained by means of molecular mechanics, which showed that each iron atom in the complex 4 is surrounded by two chlorides, a tridentate N^N^N ligand and one oxygen atom, supporting considerations about the possibility of six-coordinate geometry from MMAO or the ethylene access. A comparison of 4 with the reference 2 revealed a remarkable decrease of the catalytic activity and MMAO consumption (activity up to $0.41{\times}10^3\;kg\;{mol_{Fe}}^{-1}h^{-1}bar^{-1}$, Al/Fe = 650 for 4 and $7.02{\times}10^3\;kg\;{mol_{Fe}}^{-1}h^{-1}bar^{-1}$, Al/Fe = 1600 for 2).

• 한국결정성장학회지
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• 제4권2호
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• pp.139-147
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• 1994

올소인산엽 결정의 육성을 수열법에 의해 행하였으며,육성결정의 성질은 X선 회절,Vickers 경도계 등을 이용하여 조사하였다. $AIPO_4$와 $GaPO_4$의 출발원료는 $AI_2O_3$또는 $Ga_2O_3$와 $NH_4H_2PO_4$의 혼합물을 고상반응시킨 뒤 얻어진 반응물을 수열처리하여 단상으로 제조하였다. 올소인산염 결정의 육성에 있어 큰 성장속도를 나타내는 수열조건은 다음과 같았다. 즉,$AIPO_4$ 결정: 온도범위, $170$~$200^{\circ}C$; 온도차, $15$~$20^{\circ}C;$수열용매, 4몰 HCI용액, $GaPO_4$결정: 온도범위, 210~$240^{\circ}C;$ 온도차, $25$~$30^{\circ}C; $ 수열용매,4몰 HCI용액이었다. 육성결정의 형태는 저온에서(1010),(1011),(0111)면이 발달하는 경향을 보였으나 육성온도가 증가함에 따라(0001)면이 잘 발달하였다. 한편, 올소인삼염 결정 $(AIPO_4/GaPO_4)$의 성질은 다음과 같았다. 즉, 격자정수$(Nm^2)$;a=0.494,c=1.094/a=0.490,1.105, 밀도 $(gcm^{-3}); 2.62/3.56$,경도$(Nm^2);1.02{\times}10^1^0/7.06{\times}10^9, $굴절율; $n_e= 1.529{\pm}0,003, n_e= 1.529{\pm}0,003/ n_e= 1.611{\pm}0,006,n_e= 1.599{\pm}0,006$,복굴절율;${\pm}0.01$ / $ {\pm}0.012$, 유전율 $(Fm^-1); 6/7$이었다.

• 한국결정성장학회지
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• 제9권2호
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• pp.260-265
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• 1999

$\alpha$-SiC에 ${\alpha}-Si_3N_4$ 를 10~30 vol%까지 10 vol% 간격으로 혼합하고 소결 조제로$Al_2O_3$와$Y_2O_3$를 각각 6wt% 로 첨가하여 $1,780^{\circ}C$에서 2시간동안 질소 분위기에서 상압소결하여 $Si_3N_4$ 복합체를 제조하였다. 상대 이론 밀도 및 꺽임 강도는 ${\alpha}-Si_3N_4$를 20 vol% 첨가하였을 때 92% 및 3,560 MPa로 가장 우수하였으며, 비마모량도 $2.68{\times}10^{-3}\;mm^2$ 으로 가장 작았다. 그리고, 파괴 인성$(K_{1c})$)은 ${\alpha}-Si_3N_4$를 30vol% 첨가하였을 때 $4.9\;MN/m^{3/2}$로 가장 좋았으나 이 경우 기공의 영향으로 내마모성은 저하된 것을 확인할 수 있었다.