• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.553-557
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• 1999

In order to investigate the optical properties of the $Al_XGa_{1-X}N/GaN$ thin film grown by metalorganic chemical vapor deposition (MOCVD) method, the photoluminescene (PL), photocurrent (PC) and persistent photoconductivity (PPC) measurements were carried out at room temperature. The band gap of the $A1_x$$Ga_{1-x}$N/GaN was determined to 3.70 eV by the PL and PC measurements. The PC measurement on the light illumination from the top of the $A1_x$$Ga_{1-x}$N/GaN thin film provides peaks at 3.70, 3.43, and around 2.2 eV. The PC spectrum by the illumination passing through from the substrate of the sample can be shown at 3.43 eV together with a broad tail band from the GaN band edge to around 2.23 eV. The photocurrent quenching and anomalous PPC decay observed in PPC measurements indicate that metastable electron states are fomed in the band gap of GaN layer to trap electrons which can be tunneled the potential barrier for long recovery time.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.19-22
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• 1997

The surface modificaion of alumina by $Al_2$O$_3$/SiC nanocomposite coating was studied in terms of processing and microstructure. A powder slurry of 5 vol% SiC composition was dipcoated onto presintered alumina bodies and pressurelessly sintered at 1$700^{\circ}C$ for 2 h in $N_2$. The used of organic binder and plasticizer in the slurry preparation, and the control of the density of presintered alumina body were found to be necessary to avoid cracking and warping during processing. The nanocomposite coating well bonded to the alumina body with thickness about 110 ${\mu}{\textrm}{m}$. The average grain size of coating (2 ${\mu}{\textrm}{m}$) was much finer than that of alumina body (13 ${\mu}{\textrm}{m}$). Fracture surface observations revealed mostly transgranular fracture for the coating, whereas intergranular fracture for the alumina body. Some pores (about 6%) were observed in the coating layer, although the alumina body showed fully dense microstructure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.212-216
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• 1999

SiC(3C) photodiodes (PDs) were fabricated on p-type Si(111) substrates using chemical vapor deposition (CVD) technique by pyrolyzing tetramethylsilane (TMS) with $H_{2}$ carrier gas. Electrical properties of SiC(3C) were investigated by Hall measurement and current-voltage (I-V) characteristics. SiC(3C) layers exhibited n-type conductivity. Ohmic contact was formed by thermal evaporation Al metal through a shadow-mask. The optical gain $(G_{op})$ of the SiC(3C)/Si PD was measured as a function of the incident wavelength. For the analysis of the photovoltaic detection of the Sic(3C) n/p PD, the spectral response (SR) has calculated by using the electrical parameters of the SiC(3C) layer and the geometric structure of the PD. The peak response calculated for properly chosen parameters was about 0.75 near 550 nm. We expect a good photoresponse in the SiC(3C) heterostructure for the wavelength range of 400~600 nm. The SiC(3C) photodiode can detect blue and near ultraviolet (UV) radiation.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.435-444
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• 2001

WC-( $Ti_{1-x}$ A $l_{x}$) N coatings of constant changing Al concentration were deposited on S45C substrates by high-ionization sputtered PVD method. The Al concentration could be controlled by using evaporation source for Al and fixing the evaporation rate of the metals (i.e, WC- $Ti_{0.86}$A $l_{0.14}$N, WC- $Ti_{0.72}$A $l_{0.28}$N, and WC- $Ti_{0.58}$A $l_{0.42}$N). The corrosion behavior of WC-( $Ti_{1-x}$ A $l_{x}$)N coatings in a deaerated 3.5% NaCl solution was investigated by electrochemical corrosion tests and surface analyses. The measured galvanic corrosion currents between coating and substrate indicated that WC- $Ti_{0.72}$A $l_{0.28}$N coating showed the best resistance of the coating tested. The results of potentiodynamic polarization tests showed that the WC- $Ti_{0.72}$A $l_{0.28}$N coating deposited with 32W/c $m^2$ of Al target revealed higher corrosion resistance. This indicated that the WC- $Ti_{0.72}$A $l_{0.28}$N coating is effective in improving corrosion resistance. In EIS, the WC- $Ti_{0.72}$A $l_{0.28}$N coating showed one time constant loop and increased a polarization resistance of coating ( $R_{coat}$) relative to other samples. Compositional variations of WC-( $Ti_{1-x}$ A $l_{x}$)N coatings were analyzed by EDS and XRD analysis was performed to evaluate the crystal structure and compounds formation behavior. Surface morphologies of the films were observed using SEM and AFM. Scratch test was performed to measure film adhesion strength.strength. adhesion strength.strength.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.624-628
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• 2000

As a power durable-electrode in SAW filter, Al-1%Cu/tungsten nitride multi-layer thin film was fabricated by magnetron sputtering process. Tungsten nitride films had the amorphous phase at the nitrogen ratio, R, ranging from 10~40%. The amorphization could be controlled by nitrogen ratio, R= $N_2$/($N_2$+Ar) as a sputtering process parameter. Residual stress in tungsten nitride abruptly decreased with the formation of amorphous phase. Al-1%Cu thin film was deposited on the amorphous tungsten nitride. After the multi-layed thin film was annealed for 4 hours at 453K, the resistivity decreased as $3.6{\mu}{\Omega}-cm$, which was due to grain growth reduced crystal defects.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.53-60
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• 2014

Different kinds of post-deposition annealing (PDA) by a rapid thermal process (RTP) are used to enhance the field-effect passivation of $Al_2O_3$ film in crystal Si solar cells. To characterize the effects of PDA on $Al_2O_3$ and the interface, metal-insulator semiconductor (MIS) devices were fabricated. The effects of PDA were characterized as functions of RTP temperature from $400{\sim}700^{\circ}C$ and RTP time from 30~120 s. A high temperature PDA can retard the passivation of thin $Al_2O_3$ film in c-Si solar cells. PDA by RTP at $400^{\circ}C$ results in better passivation than a PDA at $400^{\circ}C$ in forming gas ($H_2$ 4% in $N_2$) for 30 minutes. A high thermal budget causes blistering on $Al_2O_3$ film, which degrades its thermal stability and effective lifetime. It is related to the film structure, deposition temperature, thickness of the film, and annealing temperature. RTP shows the possibility of being applied to the PDA of $Al_2O_3$ film. Optimal PDA conditions should be studied for specific $Al_2O_3$ films, considering blistering.

• Journal of the Korean Ceramic Society
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• v.29 no.7
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• pp.511-516
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• 1992

In this study, SiC powder and Si powder were used as the raw materials. Mixture was prepared with addition of Al2O3 and Fe2O3 at 0.1~0.5wt% respectively. After this step, the mixture was pressed and nitrided for 30 hrs at 140$0^{\circ}C$ under NH3-N2 atmosphere. Mechanical properties of sintered specimens were investigated from measurement of porosity, bulk density and three point bending test. nitration reaction extent was observed at the change of mass before and after reaction, and the microstructure and the change of $\alpha$-Si3N4 and $\beta$-Si3N4 were observed by XRD and SEM. In the current work, the results are as follows 1. When Fe2O3 added, the nitridation increased with the content of Fe2O3, and the bending strength was increased from 0.1 wt% to 0.3 wt%, and decreased to 0.5 wt%. 2. When Al2O3 added, the nitridation and the bending strength increased little by little with the content of Al2O3 3. The bending strength of the specimen added with Fe2O3 were higher than that with Al2O3. Because the specimens contained Fe2O3 had much more the whisker type crystal of Si3N4 contributing to strength than contained Al2O3.

• Bulletin of the Korean Chemical Society
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• v.32 no.8
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• pp.2537-2543
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• 2011

A self-assembled Al-bridged diiminopyridine-based ligand (3) was synthesized and characterized by FT-IR, ESI-MS and NMR spectroscopy. Electron spectral titrations were performed to confirm the formation of a novel trinuclear bis(imino)pyridyl iron(II) complex (4) upon addition of $FeCl_2$ into Al-bridged ligand 3 in methanol solution. Simultaneously, a typical bis(imino)pyridine-iron(II) complex (2) was synthesized and fully characterized. The X-ray crystal study of the iron(II) complex 2 disclosed a five-coordinate, distorted square-pyramidal structure with the tridentate N^N^N ligand and chlorides. The optimal molecular structure of 4 was obtained by means of molecular mechanics, which showed that each iron atom in the complex 4 is surrounded by two chlorides, a tridentate N^N^N ligand and one oxygen atom, supporting considerations about the possibility of six-coordinate geometry from MMAO or the ethylene access. A comparison of 4 with the reference 2 revealed a remarkable decrease of the catalytic activity and MMAO consumption (activity up to $0.41{\times}10^3\;kg\;{mol_{Fe}}^{-1}h^{-1}bar^{-1}$, Al/Fe = 650 for 4 and $7.02{\times}10^3\;kg\;{mol_{Fe}}^{-1}h^{-1}bar^{-1}$, Al/Fe = 1600 for 2).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.2
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• pp.139-147
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• 1994

Orthophosphate crystals were grown by the hydrothermal method and the properties of grown crystals were investigated by means of X-ray diffraction. Vickers hardness tester, etc. The starting powders of $AIPO_4 and GaPO_4 $were prepared as a single phase by the solid state reaction of stoichiometric mixture of $AI_2O_3 or Ga_2O_3$ and $NH_4H_2PO_4$ and the subsequently by the hydrothermal treatment. The hydrothermal conditions for high growth rates of the orthophosphate crystals are as follows: $AlPO_4$ crystal; temperature ranges, between $170$~$200^{\circ}C$; temperatures difference, $15$~$20^{\circ}C;$, hydrothermal solvent, 4m HCl, $GaPO_4 crystal; temperature ranges, between $210 and 240^{\circ}C;$; temperature difference, $25$~$30^{\circ}C; $, hydrothermal solvent, 4m HCl. Morphologies of grown crystals tended to be bounded by (1010), (1011) and (0111) faces at low temperatures, and grew with well developed (0001) faces by increasing the growth temperature. On the other hand, the properties of orthophosphate crystals $(AlPO_4/GaPO_4)$ were as follows: lattice parameters (nm); a=0.494, c=1.094/a=0.490, c=1.105, density (gcm-3); 2.62/3.56, Vickers hardness (Nm^2); $1.02{\times}10^1^0/7.06{\times}10^9$, refractive indices; $ne=1.529{\pm}0.003, no=1.519{\pm}0.003/ne=1.611{\pm}0.006, no=1.599{\pm}0.006, birefringence; {\pm}0.01/{\pm}0.012$, dielectric constant (Fm-1); 6/7.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.260-265
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• 1999

$SiC/Si_3N_4$ composites were prepared by mixing ${\alpha}-Si_3N_4$ powder to $\alpha$-SiC powder in the range of 10 to 30 vol% with 10 vol% interval. 6 wt% of $Al_2O_3$ and $Y_2O_3$ were also added respectively as sintering aids. Then, pressureless sintering was performed at 1,78$0^{\circ}C$ for 2 hours in $N_2$ gas. In the case of adding 20 vol% of ${\alpha}-Si_3N_4$ powder, the relative desity to theoretical value and the flexutal strength were 92 % and 3,560 MPa, respectively. The smallest relative worn amount thereof was $2.68{\times}10^{-3}\;mm^2$ for 20 vol% ${\alpha}-Si_3N_4$. The composite containing 30 vol % of ${\alpha}-Si_3N_4$ powder showed the highest fracture toughness $(K_{1c})$ of $4.9\;MN/m^{3/2}$, although the reduction of the wear resistance due to the effect of the pores was observed.