• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.44.1-44.1
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• 2007

• Journal of the Semiconductor & Display Technology
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• v.23 no.1
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• pp.92-96
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• 2024

The application of the technology for forming Al₂O₃ thin films using ALD(atomic layer deposition) method is rapidly increasing in the semiconductor and display fields. In order to increase the efficiency of the ALD process in a mass production line, metallic by-products generated from the ALD process chamber must be effectively collected. By collecting by-products flowing out of the chamber with a cold trap device before they go to the vacuum pump, damage to the vacuum pump can be prevented and the work room can be maintained stably, resulting in increased process flow rate. In this study, a cold trap was installed between the ALD process chamber and the dry pump to measure and analyze by-products generated during the Al₂O₃ thin film deposition process. As a result, it was confirmed that Al and O elements were discharged, and the collection forms were two types: bulk and powder. And the binding energy peaked at 73.7 ~ 74.3 eV, the binding energy of Al 2p, and 530.7 eV, the binding energy of O 1s, indicating that the binding structure was Al-O.

• Transactions of the Korean hydrogen and new energy society
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• v.22 no.3
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• pp.319-325
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• 2011

The electrical properties of sputtered GDC thin films on $Al_2O_3$ substrates was studied. The electrical properties of the films were measured to evaluate the ion conductivity of GDC thin films for co-planar SOFC electrolytes. The impedance of the GDC thin films on $Al_2O_3$ substrates was affected by the film thickness and the impedance of thin film exhibited higher value than thick films. Similarly, the conductivity of the thick film showed much higher value than thin films. It indicated that the film thickness is the main factor affecting the conductivity and impedance of the GDC electrolyte for the co-planar SOFC.

• Journal of the Korean Ceramic Society
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• v.43 no.3 s.286
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• pp.143-147
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• 2006

Co-Fe-Al-O nanogranular thin films were fabricated by RF-magnetron sputtering under an $Ar+O_2$ atmosphere. High resolution transmission electron microscopy revealed that the Co-Fe-Al-O films are composed of bcc (Co, Fe) nanograins finer than 5 nm and an Al-O amorphous phase. A very large electrical resistivity of $374{\mu}{\Omega}cm$ was obtained, together with a large uniaxial anisotropy field of 50 Oe, a hard axis coercivity of 1.25 Oe, and a saturation magnetization of 12.9 kG. The actual part of the relative permeability was measured to be 260 at low frequencies and this value was maintained up to 1.3 GHz. The ferromagnetic resonance frequency was 2.24 GHz. The resulting Co-Fe-Al-O nanogranular thin films with a high electrical resistivity and high resonance frequency are considered to be suitable for GHz magnetic device applications.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.657-659
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• 2004

Trivalent cerium ($Ce^{3+}$) activated yttrium aluminum garnet ($Y_3Al_5O_{12}$, YAG) phosphor thin films were deposited on quartz glass substrates by rf magnetron sputtering. The effects of sputtering parameters and annealing condition on the luminescent properties were investigated. The sputtering parameters were $O_2$/Ar gas ratio, rf power, and deposition time. The films were annealed at 1200 $^{\circ}C$ for 5 hours in $N_2+$vacuum atmosphere. Polycrystalline YAG:Ce thin film phosphor could be obtained with a gas ratio of $O_2$/(Ar+$O_2$)=0.5 after post-annealing. PL spectra excited at 450 nm showed a yellow single band at 550 nm.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.511-514
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• 1987

Langmuir-Blodgett (LB) films of TCNQ(tetracyanoquinodimethane) with alkyl radical($C_{12}TCNQ$) were prepared on the sample of Al/LB film/Al type where Al are electrode, and polarization in LB film and dipolar moment of molecules in the films were measured by TSC. $Al_2O_3$ layer was yielded on the electrode by natural oxidation in air. According to the cooperation of $Al_2O_3$ dielectric layer and the polarization of $C_{12}TCNQ$-LB film, the macroscopic electrical field was yielded in LB film and $Al_2O_3$ layer. The field strength in $C_{12}TCNQ$-LB films was evaluated at about $1{\times}10^6{\sim}5{\times}10^6\;V/cm$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.147-150
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• 2019

There is a need for the development of transparent conductive materials that are economical and environmentally friendly with exhibit low resistivity and high transmittance in the visible spectrum. In this study, the deposition rate and uniformity of Al-doped ZnO-thin films were improved by changing the Z-motion of the sputtering system. The deposition rate and the uniformity were determined to be 3.44 nm/min and 1.23%, respectively, under the 10 mm Z-motion condition. During $O_2$ plasma treatment, the intrusion-type metal elements in the thin film were reduced, which contributed to an oxygen vacancy reduction in addition to structural stabilization. Moreover, the sheet resistance was more easily saturated.

• Proceedings of the Optical Society of Korea Conference
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• 2002.11a
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• pp.20-21
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• 2002

• The Korean Journal of Ceramics
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• v.7 no.2
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• pp.85-92
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• 2001

Thin films of ZnO and Al doped ZnO were prepared by rf magnetron sputter techniques. When the oxygen fraction in Ar-O$_2$ sputter gas was about 2.0%, the films exhibited the composition of Zn:O=1.05:1. The films prepared at 250 W contain larger grains than the films grown at 100 W. However, high deposition rate seems to deteriorates the crystallinity as well as Al-substitution, resulting in lower concentration of mobile electrons. The Al-doped ZnO films which were deposited at $500^{\circ}C$ show resistance of 1$\times$10$^-2$ Wcm; optical band gap of the films ranges from 3.25 to 3.40 eV. These electrical and optical features are related with microstructural as well as crystalline characteristics of the films.

• Journal of Information Display
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• v.5 no.3
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• pp.30-34
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• 2004

Fabrications of barrier layer on a polyethersulfon (PES) film and OLED based on a plastic substrate by atomic layer deposition (ALD) have been carried out. Simultaneous deposition of 30 nm of $AlO_x$ film on both sides of PES film gave film MOCON value of 0.0615 g/$m^2$/day (@38$^{\circ}C$, 100 % R.H.). Moreover, the double layer of 200 urn $SiN_x$ film deposited by PECVD and 20 nm of $AlO_x$ film by ALD resulted in the MOCON value lower than the detection limit of MOCON. The OLED encapsulation performance of the double layer have been investigated using the OLED structure of ITO/MTDATA(20 nm)/NPD(40 nm)/AlQ(60 nm)/LiF(1 nm)/Al(75 nm) based on the plastic substrate. Preliminary life time to 91 % of initial luminance (1300 cd/$m^2$) was 260 hours for the OLED encapsulated with 100 nm of PECVD deposited $SiN_x$/30 nm of ALD deposited $AlO_x$.