• Journal of the Korean Chemical Society
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• v.38 no.1
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• pp.1-7
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• 1994

Semiempirical MNDO calculations are employed to study ionicity of OH groups and stability in $T_1-OH-T_2bridges(T_1$ = Al, B and $T_2$ = P, Si) such as found in aluminophosphate family($AlPO_4-5$, BAPO-5, and SAPO-5) molecular sieves. Dimeric model clusters of Al-OH-P, B-OH-P and Al-OH-Si bridges were considered. It is shown that the elongation of the T-O bond, upon replacement of Al by B, occurs preferentially by a local deformation of the Al-O-P bridge. But the elongation of the T-O bond occurs preferentially by a rotation of Al-O-Si bridge upon substitution P for Si. Also, the ionicity of OH groups and stability increase in order to B-OH-P < Al-OH-P < Al-OH-Si bridge.

• Journal of the Korean Chemical Society
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• v.37 no.9
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• pp.787-792
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• 1993

Semiempirical MNDO calculations are employed to study relation properties on bridging OH group with Al-O(P-O) bond length and Al-O-P bond angle of structural characteristics using birdging $(OH)_3AlOP(OH)_3$ and $(OH)_3AlOHP(OH)_3^+$ model culster. We know that the O-H bond dissociation energy of bridging OH group is increased with increasing Al-O(P-O) bond length and decreasing Al-O-P bond angle. The bridging OH group is formed into enlarged Al-O(P-O) bond length and shortened Al-O-P bond angle in bridging oxygen atom by a hydrogen migration. The negative net charge of bridging oxygen atom is increased with longer Al-O-P bond angle, while the positive net charge is decreased with longer Al-O-P bond angle.

• Journal of the Korean Vacuum Society
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• v.22 no.3
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• pp.162-167
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• 2013

An epitaxial layer structure for heterojunction p-InGaP/N-InAlGaP solar cell has proposed. Simulation for current density-voltage characteristics has been performed on p-InGaP/N-InAlGaP structure and the simulation results were compared with p-InGaP/p-GaAs/N-InAlGaP structure and homogeneous InGaP pn junction structure. The simulation result showed that the maximum output power and fill factor have greatly increased by replacing n-InGaP with N-InAlGaP. The thicknesses of p-InGaP and n-InAlGaP were optimized for the epitaxial layer structure of p-InGaP/N-InAlGaP.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.444-444
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• 2013

변형 다중양자우물은 전자 소자와 광전자 소자에 응용할 수 있는 가능성 때문에 연구가 많이 진행되고 있다. 합성 물질들의 초격자를 연속적으로 증착, 성장하는 디지털 합금은 다중양자우물을 활용한 광전자 소자에서 응용가치가 상당히 높다. 현재 디지털 합금을 이용한 다중양자우물의 성장과 관련한 연구가 활발히 진행되고 있고, 특히 InzGaxAl1-z-xP/InAlP 다중양자우물은 광전자 소자로서의 응용가치가 부각되고 있다. 그러나 InzGaxAl1-z-xP/InAlP 다중양자우물의 성장 및 광학적 성질에 대한 연구는 많이 진행되었으나, InzGaxAl1-z-xP/InAlP 다중양자우물에서의 변형효과를 고려한 전자적 성질에 대한 연구는 미흡하다. InzGaxAl1-z-xP/InAlP 다중양자우물에 대한 전자적 성질의 연구는 광소자의 성능 향상을 위해 매우 필요하다. 본 연구에서는 디지털 합금 성장 방법으로 형성한 InzGaxAl1-z-xP/InAlP 다중양자우물의 부띠 사이 천이와 전자 분포를 고찰하였다. 온도에 따른 광루미네센스의 측정을 통해 InzGaxAl1-z-xP/InAlP 다중양자우물에서 나타나는 부띠 사이의 천이를 관찰하였다. 가변 메시 유한 차분법을 이용한 이산적 모델을 통해 변형효과가 다중양자우물 구조에서 부띠에 주는 영향을 조사하였다. 격자의 불일치로 인한 변형 효과와 8-band envelope function approximation을 고려한 슈뢰딩거 방정식을 사용하여 InzGaxAl1-z-xP/InAlP 다중양자우물에서의 전자 부띠 에너지와 에너지 파동 함수를 계산하였다. 계산한 부띠 사이 천이 에너지와 광루미네센스 측정에서 보인 엑시톤 천이 에너지를 비교하였을 때, 작은 차이 값이 나타났다. 증착과정에서의 이종접합사이에서 발생하는 불확실성을 고려한다면 이 차이 값은 오차범위 안에 포함되며, 계산 값과 실험 값이 잘 일치하는 것으로 볼 수 있다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.6
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• pp.282-288
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• 2017

In this paper, GaAs/AlGaAs multi-layer structure was grown by liquid phase epitaxy with graphite sliding boat, which can be used as a device structure of a photocathode image sensor. The multi-layer structure was grown on an n-type GaAs substrate in the sequence as follows: GaAs buffer layer, Zn-doped p-type AlGaAs layer as etching stop layer, Zn-doped p-type GaAs layer, and Zn-doped p-type AlGaAs layer. The Characteristics of GaAs/AlGaAs structures were analyzed by using scanning electron microscope (SEM), secondary ion mass spectrometer (SIMS) and hall measurement. The SEM images shows that the p-AlGaAs/p-GaAs/p-AlGaAs multi-layer structure was grown with a mirror-like surface on a whole ($1.25mm{\times}25mm$) substrate. The Al composition in the AlGaAs layer was approximately 80 %. Also, it was confirmed that the free carrier concentration in the p-GaAs layer can be adjusted to the range of $8{\times}10^{18}/cm^2$ by hall measurement. In the result, it is expected that the p-AlGaAs/p-GaAs/p-AlGaAs multi-layer structure grown by the LPE can be used as a device structure of a photoelectric cathode image sensor.

• Composites Research
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• v.13 no.6
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• pp.1-8
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• 2000

The fabrication Process of $Al_2O_{3p}$/AC8A composites by pressureless infiltration technique and the effects of additive Mg content and volume fraction of particulate reinforcement on mechanical and wear properties were investigated. It was found that the bending strength decreased with increasing volume fraction of $Al_2O_{3p}$ particles. Whereas hardness increased with volume fraction of $Al_2O_{3p}$ particles. The decrement of strength in case of high volume fraction of $Al_2O_{3p}$ particles was attributed to high porosity level. In terms of additive Mg content, $Al_2O_{3p}$/AC8A composites containing around 5~7wt% of additive Mg indicated the highest strength, and hardness values increased with additive Mg contents. Wear resistance of AC8A alloy were improved by reinforcement of $Al_2O_{3p}$ particles especially at high sliding velocity. Wear property of $Al_2O_{3p}$/AC8A composites and AC8A alloy exhibited different aspects. $Al_2O_{3p}$/AC8A composites indicated more wear loss than AC8A alloy at slow velocity region. However a transition point of wear loss was found at middle velocity region which shows the minimum wear loss and wear loss at high velocity region exhibited almost same value as at slow velocity region, whereas wear loss of AC8A alloy almost linearly increased with sliding velocity. It was found that $Al_2O_{3p}$/AC8A composites containing $Al_2O_{3p}$ volume fraction of 20% exhibited abrasive wear surface regardless of sliding velocity and $Al_2O_{3p}$/AC8A composites containing $Al_2O_{3p}$ volume fraction of 40% showed slightly adhesive wear surface at low sliding velocity, and it progressed to severe wear as increasing the sliding velocity.

• Korean Journal of Soil Science and Fertilizer
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• v.23 no.1
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• pp.15-20
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• 1990

A laboratory experiment was conducted to investigate the relationship between the composition of phosphorus forms and soil chemical properties. The soil samples were collected from the farms of the 149 locations where vegetables were intensively cultivated with heavy application of phosphorus. The composition percentages of Ca-P and Saloid-P to the total phosphorus were increased as increasing soil pH while those of Fe-P and Al-P were decreased, The composition percentage of Fe-P were increased up to pH 5.0-6.0 and decreased as increasing pH above 6.0. respectively. The pH dependency of Al-P and Fe-P composition percentage was more remarkable for the soils with high available phosphorus (>500ppm) than with low available phosphorus (<500ppm). Composition percentages were in order of Fe-P>Al-P>Ca-P>Saloid-P for the soils with available phosphorus below 500ppm, while those were in order of Al-P>Fe-P>Ca-P>Saloid-P for the soils with high available phosphorus above 1,000ppm. Composition percentages of Al-P and Fe-P were increased as increasing active Al content, and Fe-P was increased as increasing of active Fe and P sorbed but saloid-P, Al-P and Ca-P were decreased.

• Journal of the Semiconductor & Display Technology
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• v.20 no.1
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• pp.12-17
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• 2021

The electronic and magnetic properties for Mn-adsorbed on the chalcopyrite (CH) AlGaP2 semiconductor are investigated by using first-principles FPLMTO method. The clean CH-AlGaP2 without adsorbed Mn is a p-type semiconductor with a direct band-gap. The Mn-adsorbed CH-AlGaP2 exhibits the ferromagnetic state. It is more energetically stable than the other magnetic ones. The interstitial site on P-terminated surface is more energetically favorable one than the Al/Ga-terminated surface, or the other adsorbing sites. In the case of Mn-adsorbed Al/Ga-terminated surface, it is induced a strong coupling between Mn-3d and neighboring P-3p electrons. The holes of partially unoccupied minority Mn-3d state and majority (or minority) Al-3p or P-3p state are induced. Thus a high magnetic moment of Mn is sustained by holes-mediated double-exchange coupling. It is noticeable that the semiconducting and half-metallic characteristics of CH-AlGaP2:Mn thin film is disappeared.

• Journal of Environmental Science International
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• v.32 no.10
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• pp.731-739
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• 2023

In this study, lab-scale phosphorus coagulation/precipitation experiments were performed using three types of polyaluminum chloride (PAC) with different Al contents (10%, 12%, and 17%). The PO₄-P removal efficiencies at various operating conditions, such as initial PO₄-P concentration, initial pH, and Al/P molar ratio, were evaluated, and correlations among the operating factors affecting phosphorus coagulation/precipitation with PAC were derived to optimize the process efficiency. When the initial PO₄-P concentration was 0.065 and 0.161 mmol P/L under an initial pH of 8-10, the optimal PAC dose was 0.126-0.378 and 0.189-0.667 mmol Al/L, respectively. Under these conditions, the Al/P molar ratio was 2.16-6.18 and 1.28-4.30, respectively, and the PO₄-P removal efficiency was in the range of 40.2-92.5%. When the Al/P molar ratio was 2 or less under an initial pH condition of 6-8, the PO₄-P removal efficiency was approximately ≤40% owing to insufficient Al³⁺ ions. However, when the Al/P molar ratio is 3-5, the PO₄-P removal efficiency improved to approximately 80-90%. Thus, the optimal Al/P molar ratio to achieve a PO₄-P removal efficiency of over 90% was determined to be approximately 4 in the PO₄-P coagulation/precipitation process using PAC.

• Journal of Powder Materials
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• v.6 no.4
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• pp.286-293
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• 1999

This study was to analyse the relationship between process parameters of the sintered composite and plasma nitriding properties with pulsed DC plasma. Fe-40at%$SiC_p$ composites of full density were fabricated by hot pressing at 1100~$1150^{\circ}C$. Sintered Fe-40at%Al and Fe-40at%$Al/SiC_p$ alloys were nitrided under pulsed DC plasma. Excellent surface hardness in the FeAl alloys could be obtained by plasma nitriding. ($H_v$ :100gf, diffusion layer : 1100~$1450kg/mm^2$, matrix : 330~$360kg/mm^2$) The wear resistance of $FeAl/SiC_p$ composites were improved about by 4~6times than FeAl and nitrided $FeAl/SiC_p$ were improved about 2 times than $FeAl/SiC_p$ matrix.