• Title/Summary/Keyword: Al-anode

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EFFECT OF LOAD AND ANODE/CATHODE AREA RATIO ON WEAR OF Zr-ALLOY IN $Na_2SO_4$ SOLUTION

  • Iwabuchi, A.;Hosoya, K;Abe, K.;Shimizu, T.;Kim, S.S.
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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    • pp.205-206
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    • 2002
  • In this paper we examined the contribution of mechanical and electrochemical factors in corrosive wear for Zr-alloy against $Al_2O_3$ ball in $Na_2SO_4$ solution. Normal load and the area of metallic specimen was varied to change the corrosion behavior. At the commence of sliding, the potential drop took place, which increased with load due to the great exposure of fresh surface. Wear volume was linearly proportional to load. The corrosion factor was about 15%. By increasing the Aa/Ac ratio, corrosion factor to total wear decreases and saturates above Aa/Ac=0.15.

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Synthesis and Light-emitting Properties of Random Copolymers Composed of Phenylsilyl- and Alkoxy-Sustituted Phenylenevinylene

  • Ahn, Taek
    • Transactions on Electrical and Electronic Materials
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    • 제14권5호
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    • pp.263-267
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    • 2013
  • New random copolymers of phenylsilyl- and alkoxy-substituted phenylenevinylene, DMPS(9)-MEH(1)-PPV, DMPS(5)- MEH(5)-PPV and DMPS(1)-MEH(9)-PPV, have been synthesized by the Gilch dehydrohalogenation route, and the light-emitting properties of these polymers have been studied. The synthesized polymers were completely soluble in common organic solvents, and exhibited good thermal stability, almost up to $380^{\circ}C$. They showed UV-visible absorbance and photoluminescence (PL) in the ranges of 422-510 and 513-590 nm, respectively, according to their feed ratios. Electroluminescent devices were fabricated with these polymers as emitting layers, and ITO and Al as anode and cathode, respectively. DMPS(1)-MEH(9)-PPV, DMPS(5)-MEH(5)-PPV and DMPS(9)-MEH(1)-PPV exhibited EL emission maxima at 575 nm, 565 nm, and 541 nm, respectively.

Studying the $SrTiO_3$: Pr cathode-luminescence

  • Kargin, N.I.;Vorobiev, V.A.;Sinelnikov, B.M.;Kuznetsov, U.V.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.268-269
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    • 2006
  • The estimation of applicability $SrTiO_3:Pr^{3+}$, Al to a class low-voltage flat-panel displays based on field emission effect, which have average value anode voltage $U_a=300V$ and current density $j=100\;mA/sm^2$ at duty 240, has given positive result. In the same time observably for the most effective sample in similar conditions of excitation high brightness - more than $500\;Kd/m^2$ and linear brightness dependences from current density and voltage allows to decrease greatly the power which consumed by the device.

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Alg3 두께 변화에 따른 유기 발광 소자의 내장 전압 (Built-in Voltage in Organic Light-emitting Diodes depending on the Alg3 Layer Thickness)

  • 이은혜;윤희명;김태완
    • 한국전기전자재료학회논문지
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    • 제21권3호
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    • pp.255-259
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    • 2008
  • Built-in voltage in ITO/$Alq_3$/ Al organic light-emitting diodes was studied by varying a thickness of $Alq_3$ layer using modulated photocurrent technique at ambient condition. A thickness of the $Alq_3$ layer was varied from 100 to 250 nm. From the bias voltage-dependent photocurrent, built-in voltage of the device was able to be determined. The obtained built-in voltage is about 0.8 V irrespective of the $Alq_3$ layer thickness in the device. This value of built-in voltage confirms that the built-in voltage is generated due to a difference of work function of the anode and cathode. The $Alq_3$ layer thickness independent built-in voltage indicates that the built-in electric field in the device is uniform across the organic layer.

Comparative Investigation on the Light Emitting Characteristics of OLED Devices with a Single Layer of Alq3 and a Double Layer of Rubrene/Alq3

  • 정건수;이붕주;김희성;뭉흐툴가;신백균
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.246.2-246.2
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    • 2014
  • Green-light emitting OLED with single layer of Alq3 and orange-light emitting OLED with double layer of rubrene/Alq3 as EML were fabricated and characterized comparatively. The two OLED devices were based on an anode of ITO, HTL of TPD, and cathode of Al, respectively. The green light emitting OLED was then prepared with Alq3 as both ETL and EML, while the orange-light emitting OLED was prepared with rubrene deposited on Alq3. All the component layers of the OLED devices were deposited by a thermal evaporation technique in vacuum. Photoluminescence characteristics of the EML layers were investigated. Electrolumiscence characteristics of the OLED devices were comparatively investigated.

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ITO 표면 처리방법에 따른 OLED의 전기적 특성 (The Electrical Properties of OLED by surface Etching methode of ITO)

  • 양명학;기현철;민용기;홍경진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.455-456
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    • 2008
  • In this study, we report that an electrical properties of OLEDs was investigated by the surface etching method of ITO Layer. The electrical properties of OLEDs was measured by IVL and optical properties by EL spectrum. The fundamental structure of OLEDs was ITO anode/TPD(400$\breve{A}$)/$Alq_3(600\breve{A})$/LiF(5$\breve{A}$)/Al(1200$\breve{A}$) cathode. The threshold voltage was low value according to the low resistance of surface. The luminance was increased by decreased surface resistance.

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다중 양자우물 주사형 다이오드와 펄스-모드 신경회로망 구현을 위한 그 응용 (A Novel Multi-Quantum Well Injection Mode Diode And Its Application for the Implementation of Pulse-Mode Neural Circuits)

  • Song Chung Kun
    • 전자공학회논문지A
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    • 제31A권8호
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    • pp.62-71
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    • 1994
  • A novel semiconductor device is proposed to be used as a processing element for the implementation of pulse-mode neural networks which consists of alternating n' GaAs quantum wells and undoped AlGaAs barriers sandwitched between n' GaAs cathode and P' GaAs anode and in simple circuit in conjunction with a parallel capacitive and resistive load the trigger circuit generates neuron-like pulse train output mimicking the function of axon hillock of biological neuron. It showed the sigmoidal relationship between the frequency of the pulse-train and the applied input DC voltage. In conjunction with MQWIMD the various neural circuits are proposed especially a neural chip monolithically integrated with photodetectors in order to perfrom the pattern recognition.

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$UV/O_3$$O_3$로 처리된 ITO의 표면 특성과 OLED 소자 특성 (Surface characteristics of ITO treated with $UV/O_3-O_3$ and OLED device properties)

  • 김일;유도현;박구범;육재호;박종관;조기선;이덕출
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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    • pp.1361-1362
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    • 2006
  • In this research We investigated the effect of UV/O3, $O_3$ treatments of Indium-tin oxide(ITO) surface on the performance of organic light emitting devices(OLEDs). The fundamental structure of OLEDs was ITO(anode) / TPD(Hole Transport Layer) / $Alq_3$ / Al(cathode). We performed UV/O3, $O_3$ treatments and found that both treatments enhanced the performance of OLEDs. Current-Voltage, Luminance-Voltage characteristics were measured at room temperature.

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Epoxylite Influence on Field Electron Emission Properties of Tungsten and Carbon Fiber Tips

  • Alnawasreh, Shady S;Al-Qudah, Ala'a M;Madanat, Mazen A;Bani Ali, Emad S;Almasri, Ayman M;Mousa, Marwan S
    • Applied Microscopy
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    • 제46권4호
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    • pp.227-237
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    • 2016
  • This investigation deals with the process of field electron emission from composite microemitters. Tested emitters consisted of a tungsten or carbon-fiber core, coated with a dielectric material. Two coating materials were used: (1) Clark Electromedical Instruments Epoxylite resin and (2) Epidian 6 Epoxy resin (based on bisphenol A). Various properties of these emitters were measured, including the current-voltage characteristics, which are presented as Fowler-Nordheim plots, and the corresponding electron emission images. A field electron microscope with a tip (cathode) to screen (anode) distance of 10 mm was used to electrically characterize the emitters. Measurements were carried out under ultra-high vacuum conditions with a base pressure of $10^{-6}$ Pascal ($10^{-8}$ mbar).

소자 내부에서 전하 운송체의 이동 메카니즘에 관한 연구 (A Study on the Transference Mechanism of Charge carriers within the Devices)

  • 심혜연;김준호;김영관
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.508-509
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    • 2005
  • In case of ITO/MEH-PPV/Al structure, the quantity of charge carriers flowing through the organic material was few and the density of them is fixed. The electric field inside of the device almost didn't change with the position. On the other hands, in case of Au/MEH-PPV/Au structure, the hole density increased rapidly nearby the anode but decreased nearby the cathode. The space charge phenomenon followed sufficient hole injection resulted in the change of the electric field with the position inside of the device. We verified that the result of the current-voltage simulation corresponded with experimental result.

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