• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.2
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• pp.59-65
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• 2006

Al-doped and F-doped ZnO (ZnO : Al & ZnO : F) thin films were coated onto glass substrate by sol-gel method. These films showed c-axis orientation in common, but different I(002)/[I(002) + I(101)] and FWHM (full width at half-maximum). In particular, the grain size of the ZnO : Al films decreased with the increase in the Al-doping concentration, while for the ZnO : F films the grain siae increased up to F 3 at% and then decreased. For the electrical properties, Hall effect measurement was used. The resistivity of the ZnO : Al films and the ZnO : F films were, respectively, $2.9{\times}10^{-2}{\Omega}cm$ at Al 1 at% and $3.3{\times}10^{-1}{\Omega}cm$ at F 3 at%. Moreover compared with ZnO:Al films, ZnO:F films have lower carrier concentration (ZnO : Al $4.8{\times}10^{18}cm^{-3}$, ZnO : F $3.9{\times}10^{16}cm^{-3}$) and higher mobility (ZnO : Al $45cm^2/Vs$, ZnO : F $495cm^2/Vs$). For average optical transmittances, ZnO : Al thin films have $86{\sim}90%$ and ZnO : F films have $77{\sim}85%$ comparatively low.

• Journal of IKEEE
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• v.24 no.2
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• pp.435-440
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• 2020

ZnO:Al films with about 500 nm thick were prepared by RF magnetron sputtering. The ZnO:Al films were annealed at 100 ℃, 200 ℃, 300 ℃, and 400 ℃ for 10 h, respectively. The resistivity, carrier concentration, and mobility variation of ZnO:Al films with heat treatments were measured. The causes of the resistivity variation of ZnO:Al films with heat treatments were investigated by utilizing the results of x-ray diffraction and field emission scanning electron microscope. The energy band gap, Urbach energy, and refractive index were obtained from the transmittance of ZnO:Al films. The change in electrical properties of the ZnO:Al film was explained in relation to the optical properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.422-425
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• 2004

In this study, the AZO thin films were prepared as a function of oxygen gas flow ratio at room temperature by FTS(Facing Targets Sputtering) apparatus using Zn:Al(metal)-Zn:Al(metal) or Zn(metal)-ZnO:Al(ceramic). The film thickness, crystalline and electric properties of AZO thin film was evaluated by $\alpha$-step, XRD and 4-point probe. In the results, the resistivity of AZO thin film was shown the lowest value about 8${\times}$10$^{-2}$ $\Omega$-cm(Zn:Al-Zn:Al), 3${\times}$10$^{-1}$ $\Omega$-cm(Zn-ZnO:Al) at the oxygen gas flow ratio 0.3. And the AZO thin film has good crystalline at oxygen gas flow ration 0.4, using Zn:Al-Zn:Al targets.

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.385-390
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• 2010

We studied the optical characteristics of ZnO:Al and $Al_2O_3$ coated ZnO nanorods. When ZnO:Al is deposited around the undoped ZnO nanorods, thermal diffusion of Al into ZnO gives rise to decrease the binding energy of neutral donor bound exciton whereas an insulating Al2O3 is coated around ZnO, we found that semiconducor-insulator interface states play an important role in optical quenching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.106-106
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• 2009

Al-doped ZnO (AZO) thin films were grown on glass substrates by co-sputtering at room temperature. We made ZnO and Al target and ZnO:Al film is deposited with sputter which has two RF gun source. The Al content was controlled by varying Al RF power and effect of Al contents on the properties of ZnO:Al film was investigated. Crystallinity and orientation of the ZnO:Al films were investigated by X-ray diffraction (XRD), surface morphology of the ZnO:Al films was observed by atomic force microscope. Electrical properties of the ZnO:Al films were measured at room temperature by van der Pauw method and hall measurement. Optrical properties of ZnO:Al films were measured by UV-vis-NIR spectrometer.

• Journal of Advanced Marine Engineering and Technology
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• v.9 no.3
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• pp.240-249
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• 1985

This paper presents the results of the galvanic anode's characteristicsin the Al-Zn-In-Mg and Al-Zn-In-Mg system anodes used aluminium ingot of low purity, 99.5% grade. The results of thses performance tests are as follows: 1) Zn, In and Mg are an available elements to improve the performance of Aluminium alloy anodes. 2) When the range of zinc content in the Al-Zn-In-Mg system anode is 2-5% the more zinc content, the more improve the anode performance. 3) Al-Zn-In-Mg system anode requires a long term over 50 days for the performance test. 4) The composition of Al-Zn-In-Mg system anode which shows the most excellent performance is Al-(2-3%) Zn-(0.02%) In-(1.0%) Mg. 5) When the Al-Zn-In-Mg system anode is annealed for an hour in 500 to 550 .deg. C, the anode performance is improved. 6) The lower average potential and the better corrosion pattern in the Al-Zn-Mg, Al-Zn-In and Al-Zn-In-Mg system anodes, the more current efficiency is improved.

• Journal of Korea Foundry Society
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• v.30 no.4
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• pp.137-141
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• 2010

The effects of Zn amounts on the castability and tensile properties of Al-Zn-Mg-Cu alloys were investigated for development of high strength die casting aluminium alloys. Al-Zn-Mg-Cu alloys with 3.5% Zn showed high cast cracking tendency and poor mold filling behaviour. Al-Zn-Mg-Cu alloys with 5wt% Zn and 7wt% Zn had the tensile strengths of 300~400MPa and the elongations of 2~18%. The effect of Zn on the tensile strength of Al-Zn-Mg-Cu alloys was insignificant, but Al-Zn-Mg-Cu alloy with high Zn amount had lower elongation.

• Journal of Korea Foundry Society
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• v.33 no.4
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• pp.171-180
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• 2013

The effects of alloying elements on the solidification characteristics, microstructure, thermal conductivity, and tensile strength of Al-Zn-Mg-Fe alloys were investigated for the development of high strength and high thermal conductivity aluminium alloy for die casting. The amounts of Zn and Mg in Al-Zn-Mg-Fe alloys had little effect on the liquidus/solidus temperature, the latent heat for solidification, the energy release for solidification and the fluidity of Al-Zn-Mg-Fe alloys. Thermo-physical modelling of Al-Zn-Mg-Fe alloys by the JMatPro program showed $MgZn_2$, AlCuMgZn and $Al_3Fe$ phases in the microstructure of the alloys. Increased amounts of Mg in Al-Zn-Mg-Fe alloys resulted in phase transformation, such as $MgZn_2{\Rightarrow}MgZn_2+AlCuMgZn{\Rightarrow}AlCuMgZn$ in the microstructure of the alloys. Increased amounts of Zn and Mg in Al-Zn-Mg-Fe alloys resulted in a gradual reduction of the thermal conductivity of the alloys. Increased amounts of Zn and Mg in Al-Zn-Mg-Fe alloys had little effect on the tensile strength of the alloys.

• Journal of the Korean Ceramic Society
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• v.37 no.4
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• pp.314-319
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• 2000

Microstructueral development and electrical properties in ZnO-Bi2O3-ZnAl2O4 system were investigated with ZnAl2O4 content(0.1~1.0 mol%). The shrinakge of specimens started around $700^{\circ}C$ and finished at 110$0^{\circ}C$, reaching a maximum shrinkage rate at 80$0^{\circ}C$. The shrinkage rate is strongly related to the fromation of a Bi-rich liquid. The increase of the ZnAl2O4 content inhibited the grain growth of ZnO. Most of ZnAl2O4 particles located at the grain boundaries were about 2~3${\mu}{\textrm}{m}$. ZnO grain size changed little up to 110$0^{\circ}C$, but increased markedly above 115$0^{\circ}C$, especially at lower ZnAl2O4 content. Drastic decreasing in breakdown voltage(Vb) with increasing temperature is expected to be dependent on the ZnO grain size and the distribution of the largest grains between the electrode. The nonlinear I-V characteristic was significantly influenced by the ZnAl2O4 content, which exhibited a maximum value at about 15${\mu}{\textrm}{m}$ of ZnO grain size.

• Korean Journal of Materials Research
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• v.27 no.3
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• pp.161-165
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• 2017

In this paper, synthesis of terephthalate intercalated Zn-Al: Layered double hydroxides (LDHs) was studied. We designed freestanding Zn-Al: carbonate LDH nanosheets for a facile exchange technique. The as-prepared Zn-Al carbonate LDHs were converted to terephthalate intercalated Zn-Al:LDHs by ion exchange method. Initially, Al-doped ZnO (AZO) thin films were deposited on p-Si (001) by facing target sputtering. For synthesis of free standing carbonate Zn-Al:LDH, we dipped the AZO thin film in naturally carbonated water for 3 hours. Further, Zn-Al: carbonate LDH nanosheets were immersed in terepthalic acid (TA) solution. The ion exchange phenomena in the terephthalate assisted Zn-Al:LDH were confirmed using FT-IR analysis. The crystal structure of terephthalate intercalated Zn-Al:LDH was investigated by XRD pattern analysis with different mole concentrations of TA solution and reaction times. The optimal conditions for intercalation of terephthalate from carbonated Zn-Al LDH were established using 0.3 M aqueous solution of TA for 24 hours.