• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.114.1-114.1
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• 2010

A highly performed Pd-based hydrogen membrane has prepared successfully on a modified porous nickel support. The porous nickel support modified by impregnation method of $Al(NO_3)_3{\cdot}9H_2O$ (Aldrich Co.) over the nickel powder showed a strong resistance to hydrogen embrittlement and thermal stability. Plasma surface modification treatment was introduced as a pre-treatment process instead of conventional HCl wet activation. Ceramic barrier was coated on the external surface of the prepared nickel supports to prevent intermetallic diffusion and to enhance the affinity between the support and membrane. Palladium and copper were deposited at thicknesses of $4\mu}m$ and $0.5{\mu}m$, respectively, on a barrier-coated support by DC sputtering process. The permeation measurement was performed in pure hydrogen at $400^{\circ}C$. The single gas permeation of our membrane was two times higher than that of the previous membrane which do not have ceramic barrier.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.186-186
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• 2012

This report investigates a new synthetic route and the size-dependent optical and electrical properties of PbS nanocrystal quantum dots (NQDs) in diameters ranging between 1.5 and 6 nm. Particularly we synthesize ultra-small sized PbS NQDs having extreme quantum confinement with 1.5~2.9 nm in diameter (2.58~1.5 eV in first exciton energy) for the first time by adjusting growth temperature and growth time. In this region, the Stokes shift increases as decreasing size, which is testimony to the highly quantum confinement effect of ultra-small sized PbS NQDs. To find out the electrical properties, we fabricate self-assembled films of PbS NQDs using layer by layer (LBL) spin-coating method and replacing the original ligands with oleic acid to short ligands with 1, 2-ethandithiol (EDT) in the course. The use of capping ligands (EDT) allows us to achieve effective electrical transport in the arrays of solution processed PbS NQDs. These high-quality films apply to Schottky solar cell made in an glass/ITO/PbS/LiF/Al structure and thin-film transistor varying the PbS NQDs diameter 1.5~6 nm. We achieve the highest open-circuit voltage (＜0.6 V) in Schottky solar cell ever using PbS NQDs with first exciton energy 2.58 eV.

• Bulletin of the Korean Chemical Society
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• v.32 no.spc8
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• pp.3045-3050
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• 2011

The synthesis of copolymers containing thiophene and benzimidazole unit by Stille polymerization is reported. The polymers with many unsubstituted thiophene units in the backbone have been reported to show low solubility, which has been a problem for spin-coating for the device fabrication. In dihexyl-2H-benzimidazole, the sulfur at 2-position of BT unit was replaced with dialkyl substituted carbon, while keeping the 1,2-quinoid form, to improve the solubility of the polymers. The PL emission spectra of the PHBIT1, PHBIT2 and PHBIT3 in chloroform solutions show maximum peaks at 500~561 nm. In thin films, maximum peaks of the PHBITs appeared at 529, 562 and 569 nm, respectively. The EL emission maxima of the PHBIT1 and PHBIT2 appear at around 588 and 576 nm, respectively. The current density and maximum luminescence of the LED with the configuration of ITO/PEDOT/ PHBIT2/Ca/Al are 552 mA/$cm^2$ and 46 cd/$m^2$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.65-68
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• 2003

Recently, there is a growing concern on the photovoltaic effects using organic materials. This is a phenomena which converts the solar energy into the electrical one. We have fabricated a device structure of ITO/PEDOT:PSS/CuPc/$C_{60}$/BCP/Al. The PEDOT:PSS layer is made by spin coating. and the other organic layers are made by thermal vapor deposition. By measuring the current-voltage characteristics with an illumination of light. we have obtained a value of $V_{oc}$=0.358V and $J_{sc}$=0.338mA/$cm^2$. A fill factor and efficiency are about 0.271 and 0.033%, respectively. A 500W xenon lamp(ORIEL) was used for a light source, and the light intensity illuminated into the device was about 10mW.

• Applied Microscopy
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• v.47 no.1
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• pp.36-42
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• 2017

Field electron emission measurements were performed on dielectric-coated tungsten emitters, with apex radii in the nanometer and micrometer range, which were prepared by electrochemical etching in NaOH solution. Measurements were performed in a field electron microscopy (FEM) with a base pressure <$10^{-6}$ Pascal ($10^{-8}$ mbar). Four different types of dielectric were used, namely: (1) Clark Electromedical Instruments epoxylite resin, (2) Epidian 6 produced by Ciech Sarzyna S. A., (3) a Radionox solution of colloidal graphite; and (4) Molyslip 2001 E compound ($MoS_2$ and MoS). Current-voltage measurements and FEM images were used to investigate the characteristics of these composite emitters, and to assess how the different types of dielectric coating affect the suitability of the composite emitter as a potential electron source.

• Korean Journal of Materials Research
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• v.28 no.3
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• pp.135-141
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• 2018

Stainless steel is being used in various industries such as automobile and aerospace for its cheap manufacturing cost and excellent mechanical properties. However, stainless steel failed to stably protect a specimen with a $Cr_2O_3$ protective layer at temperatures above $1000^{\circ}C$. Thus, improving the high temperature flame resistance of the specimen through additional surface coating was needed. In this study, multilayer coatings of YSZ and $Al_2O_3$ were performed on SUS 304 specimens using pack cementation coatings and thermal plasma spray. The multilayer coated specimen showed enhanced thermal properties due to the coated layers. The microstructures and phase stability are discussed together with flame conditions at $1350^{\circ}C$.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.80-83
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• 2011

We have fabricated phosphorescent white organic light-emitting devices (WOLEDs) with a spin-coated poly(Nvinylcarbazole) [PVK] host layer. Iridium(III) bis[(4,6-difluorophenyl)-pyridinato-N,$C^{2'}$]picolinate (FIrpic), tris(2-phenylpyridine)iridium(III) [$Ir(ppy)_3$], and tris(2-phenyl-1-quinoline)iridium(III) [$Ir(phq)_3$], were used as the blue, green, and red guest materials, respectively. The PVK was mixed with FIrpic, $Ir(ppy)_3$, and $Ir(phq)_3$ molecules in a chlorobenzene solution and spin-coated in order to prepare the emission layer; 3-(4-biphenylyl)-4-phenyl-5-(4-tertbutylphenyl)-1,2,4-triazole (TAZ) was used as an electron transport material. The resultant device structure was ITO/PVK:FIrpic:$Ir(ppy)_3:Ir(phq)_3$/TAZ/LiF/Al. The electroluminescence, efficiency, and electrical conduction characteristics of the WOLEDs based on the doped PVK host layer were investigated. The maximum current efficiency of the three wavelength WOLED with the doped PVK host was 19.2 cd/A.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2002.11a
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• pp.329-334
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• 2002

This study evaporates TiO$_2$ layer thickness differently with RF sputtering method on Si Wafer(n-100). Thin film is made with the structure of Si+TiO$_2$ and Si+TiO$_2$+Al by evaporating TiN which is used as Antireflection of superintegrated semiconductor integrated circuit with Photo Catalyst. The research is performed to increase the characteristics of photon energy according to TiO$_2$ thickness and the reliability and reproducibility of TiO$_2$ thin film. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant ($\varepsilon$$_1$, $\varepsilon$$_2$) has larger peak values as it's thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

• Journal of radiological science and technology
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• v.14 no.1
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• pp.49-60
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• 1991

Thermoluminescent phosphors, which are now being used widely in radiation dosimetry, have an excellent sensitivity to ionizing radiation. In this study, thermoluminescent phosphors of $CaSO_4$ : Mn, $CaSO_4$ : Dy and $CaSO_4$ : Tm are prepared and their physical properties are investigated by measuring the trapping parameters and their luminescent spectra. By considering the sensitivity to X-ray and fading characteristics, $CaSO_4$ : Dy is most adequate to imaging plate. The imaging plate are prepared by coating the $CaSO_4$ : Dy powder on the Al substrate and its dose dependence is linear within the range of 40 mGy-20 Gy X-ray. The sensitivity of imaging plate depends linearly on the thickness of coated phosphor layer up to $35\;mg/cm^2$ and is independent on the grain size of the phosphor in the range of $70{\sim}250\;{\mu}m$. By photographing the imaging plate, X-ray images of the test object are obtained and better than those of X-ray films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.221-221
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• 2006

The SMD type P-N junction diode with ceramic package for diode case were fabricated. It was made this diode with simple process from $Al_2O_3$ ceramic chip, solder preform, diode chip, coating reagent and conductive paste for chip terrmination. Its merit is small size, easy manufacture. fast cooling with ceramic case. The electric characteristics of the diode such as reverse recovery time, breakdown voltage, forward voltage, and leakage current were 5 28ns, 1322V, 1.08V, $0.45{\mu}A$.