• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.237.1-237.1
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• 2013

Ti 와 Al 은 금속간의 화합물이 내산화성에 우수한 성질을 가지고 있으며 낮은 밀도와 고온에도 큰 변화가 없는 성질을 가지고 있다. 그리하여 내식 및 부식 관련 연구나 고온재료를 필요로 하는 우주, 엔진 제품 등에 많은 연구가 진행되고 있다. 또한 Ti-Al-N 박막은 경도가 우수하여 고속 공구 부품에 널리 사용되고 있으며 최근 Ti-Al-N 에 Si 첨가로 인하여 40 GPa 이상의 고경도와 1,000도 이상의 산화온도를 지닌 나노 혼합물 코팅을 형성 시키는 것으로 알려져 있다. 본 연구에서는 Ti, Al, Si 원분말을 PBM (Planetary Ball Milling) 방법을 사용하여 Ti-Al-Si 혼합분말로 제조하고, 제조된 분말들은 SPS (Spark Plasma Sintering) 공정을 통하여 Ti-Al-Si 합금타겟을 제작하였다. 제작된 Ti-Al-Si 합급타겟을 사용한 Sputtering 공정을 수행하여 Ti-Al-Si 3원계 박막을 증착하였다. 그 결과 기존 Ti (82 ${\mu}m$), Al (32 ${\mu}m$), Si (16 ${\mu}m$) 크기의 원분말들이 PBM (Planetary Ball Milling) 공정 후 Ti-Al-Si (18 ${\mu}m$) 로 입도가 작아진 것을 확인 할 수 있었고, 소결 후 타겟이 99% 이상의 높은 밀도를 가졌으며 원분말의 조성과 동일한 조성을 가진 타겟이 제작되었음을 확인하였다. Ti-Al-Si 타겟의 경도는 약 1,000 Hv 이상의 값을 보였으며, Ti-Al-Si-N 박막의 경우 타겟의 조성과 동일하였고 경도는 약 35 GPa 로 높은 경도 값을 가지는 것을 확인하였다. 내산화 테스트 결과 Ti-Al-Si-N 박막은 1,000도 에서도 박막의 손상이 가지 않았다.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.3
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• pp.19-23
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• 2015

In this study, two types of Au/TiW bump samples were fabricated by the electroplating process onto Al/Si and SiN/Si wafers for the COG (Chip On Glass) packaging. TiW was used as the UBM (Under Bump Metallurgy) material of the Au bump and it was deposited by a sputtering method under the sputtering powers ranges from 500 to 5000 Watt. We investigated the delamination phenomenas for the prepared samples as a function of the input sputtering powers. The stable interfacial adhesion condition was found to be 1500 Watt in sputtering power. In addition, the SAICAS (Surface And Interfacial Cutting Analysis System) measurement was used to find the adhesion strength of Au bumps for the prepared samples. TiW UBM films were deposited at the 1500 Watt sputtering power. As a results, there was a similar adhesion strengths between TiW/Au interfacial films on Al/Si and SiN/Si wafers. However, the adhesion strength of TiW UBM sputtering films on Al and SiN under films were 2.2 times differences, indicating 0.475 kN/m for Al/Si wafer and 0.093 kN/m for SiN/Si wafer, respectively.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.169-177
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• 1995

The diffusion barrier property of 100-nm-thick titanium nitride (TiN) film between Cu and Si was investigated using sheet resistance measurements, etch-pit observation, x-ray diffractometry, Auger electron spectroscopy, and transmission electron microscopy. The TiN barrier fails due to the formation of crystalline defects (dislocations) and precipitates (presumably Cu-silicides) in the Si substrate which result from the predominant in-diffusion of Cu through the TiN layer. In contrast with the case of Al, it is identified that the TiN barrier fails only the in-diffusion of Cu because there is no indication of Si pits in the Si substrate. In addition, it appears that the stuffing of TiN does not improve the diffusion barrier property in the Cu/TiN/Si structure. This indicates that in the case of Al, the chemical effect that impedes the diffusion of Al by the reaction of Al with $TiO_{2}$ which is present in the grain boundaries of TIN is very improtant. On the while, in the case of Cu, there is no chemical effect because Cu oxides, such as $Cu_{2}O$ or CuO, is thermodynamically unstable in comparison with $TiO_{2}$. For this reason, it is considered that the effect of stuffing of TiN on the diffusion barrier property is not significant in the Cu/ TiN/Si structure.

• Korean Journal of Materials Research
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• v.5 no.1
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• pp.87-95
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• 1995

The effect of stuffing of TiN on the diffusion barrier property between A1 and Si was investigated. The stuffing of TiN was performed by annealing in a Nz ambient at $450^{\circ}C$ for 30min. By TEM analysis, it is identified that there are solid-free or open spaces of a b u t 10-20$\AA$ between the grains of asdeposited TiN. In the case of stuffed TiN, the width of solid-free or open spaces has been reduced to about 10$\AA$ or below. The combination of RBS and AES analyses showed that the asdeposited TiN had about 7at.% of oxygen, and that the stuffed TiN had about 10-15at.% of oxygen. The diffusion barrier test result shows that after annealing at $650^{\circ}C$ for lhour, the asdeposited TiN fails due to the formation of A1 spikes and Si pits in the Si substrate. However, in the case of stuffed TiN, there is no indication of Al spikes and Si pits at the same annealing condition. Thus, it is concluded that this stuffing of TiN significantly improves the diffusion barrier property of TiN between A1 and Si. It is considered that the stuffing effect results from the reduced diffusion through grain boundaries due to the reduced spacing of grain boundaries.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.107-107
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• 2016

TiCrAlSiN films were developed in order to improve the high-temperature oxidation resistance, corrosion resistance, and mechanical properties of conventional TiN films that are widely used as hard films to protect and increase the lifetime and performance of cutting tools or die molds. In this study, a nano-multilayered TiAlCrSiN film was deposited by cathodic arc plasma deposition. It displayed relatively good oxidation resistance at $700-900^{\circ}C$, owing to the formation protective oxides of $Al_2O_3$, $Cr_2O_3$, and $SiO_2$, and semiprotective $TiO_2$. At $1000^{\circ}C$, the increased temperature led to the formation of the imperfect oxide scale that consisted primarily of the outer ($TiO_2$,$Al_2O_3$)-mixed scale and inner ($TiO_2$, $Al_2O_3$, $Cr_2O_3$)-mixed scale.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.68-68
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• 2015

질화 티타늄(titanium nitride; TiN)은 색상이 미려하고 물리적 특성이 우수한 특성에도 불구하고 내산화성이 낮아 이를 해결하기 위해서 TiN에 Al을 첨가한 TiAlN 소재가 개발되었다. 하지만 난삭재 가공용 공구의 사용 온도가 $800^{\circ}C$이상인 점을 고려하여 $800^{\circ}C$ 이상의 고온 환경에서도 산화가 일어나지 않는 고경도 박막 소재가 요구되고 있으며 TiAlN 소재에 Si을 첨가하면 내산화성이 향상된다는 연구결과가 보고되고 있다. 본 연구에서는 음극 아크 증착과 스퍼터링을 동시에 이용한 하이브리드 공정으로 제조한 TiAlSiN 박막의 Si 함량에 따른 미세구조, 물리적 특성 그리고 내산화성을 평가하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.208-210
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• 2009

5성분계 Ti-Al-Si-C-N 코팅막은 하이브리드 코팅 시스템을 사용하여 실리콘 (Si) 웨이퍼와 SUS 304 기판위에 합성되었다. 본 연구에서는 Si 첨가에 의해 Ti-Al-Si-C-N 코팅막의 미세구조와 기계적 특성의 변화를 체계적으로 조사하였다. Si 함량이 증가됨에 따라 Ti-Al-Si-C-N 코팅막의 미세구조는 주상정에서 나노복합체를 가지는 미세구조로 변화하였다. 나노복합체의 고유한 특성에 의하여 미소경도는 약 56GPa로 증가하였고, Si가 증가함에 따라 평균 마찰계수도 크게 줄어들었다.

• Korean Journal of Metals and Materials
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• v.48 no.11
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• pp.1003-1008
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• 2010

In this study, the effect of the reinforcement on the wear behaviour and mechanical properties of hypereutectic Al-Si alloys was investigated. The Gas atomized hypereutectic Al-20Si alloy powders were mixed with 1, 3, and 5 wt.% AlN and TiC ceramic particles and consolidated by hotpress. The Al-20Si powder has both finely dispersed primary Si phases and eutectic structures. The Al-20Si-AlN, TiC composites showed that the reinforcements were distributed along the boundary of the Al-20Si alloy. The UTS increased with increasing the AlN, TiC contents. At a lower load, with an increasing weight fraction of reinforcements, the wear rate decreased in both composites and the wear mechanism was adhesive wear. At a higher load, the shape of the debris changes the mechanism of the AlN composites to abrasive-adhesion wear and this resulted in an increase of the wear rate.

• Journal of the Korean institute of surface engineering
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• v.54 no.5
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• pp.285-293
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• 2021

High-entropy TiAlCrSiN nano-composite coating was designed to improve mold life for high temperature liquid molding. Alloy design, powder fabrication and single alloying target fabrication for the high-entropy nano-composite coating were carried out. Using the single alloying target, an arc ion plating method was applied to prepare a TiAlCrSiN nano-composite coating had a 30 nm TiAlCrSiN layers are deposited layer by layer, and form about 4 ㎛-thickness of multi-layered coating. TiAlCrSiN nano-composite coating had a high hardness of about 39.9 GPa and a low coefficient of friction of less than about 0.47 in a dry environment. In addition, there was no change in the structure of the coating after the dissolution loss test in the molten metal at a temperature of about 1100 degrees.

• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.88-93
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• 2005

Ti-AI-Si-N coating layers were deposited on WC-Co substrates by a hybrid system of arc ion plating and sputtering techniques. The coatings were prepared with different Si contents to investigate the effect of Si content on their mechanical properties and microstructures. The dry sliding wear experiments were conducted on Ti-AI-Si-N coated WC-Co discs at constant load, 3N, and sliding speed, 0.1 m/s with two different counterpart materials such as steel ball and zirconia ball using a conventional ball-on-disc sliding wear apparatus. In the case of steel ball, the friction coefficient of Ti-AI-Si-N coating layers became lower than that of Ti-AI­N coating layers. The friction coefficient decreased with increasing of Si content due to adhesive wear behavior between coating layer and steel ball. On the contrary, in the case of zirconia ball, the friction coefficient increased with increasing of Si content, indicating that abrasive wear behavior was more dominant when the coating layers slid against zirconia ball.