• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.1
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• pp.8-13
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• 2014

As packing density in integrated circuits increases, multilevel metallization process has been widely used. But hillock formed in the bottom layers of aluminum are well known to make interlayer short in multilevel metallization. In this study, the effects of ion implantation to the metal film and deposition temperature on the hillock formation were investigated. The Al-1%Si thin film of $1{\mu}m$ thickness was DC sputtered with substrate ($SiO_2/Si$) temperature of $20^{\circ}C$, $200^{\circ}C$, and $400^{\circ}C$, respectively. Ar ions ($1{\times}10^{15}cm^{-2}$: 150 keV) and B ions ($1{\times}10^{15}cm^{-2}$, 30 keV, 150 keV) were implanted to the Al-Si thin film. The deposited films were evaluated by SEM, surface profiler and resistance measuring system. As a results, Ar implanting to Al-Si film is very effective to reduce hillock size in the metal deposition temperature below than $200^{\circ}C$, and B implanting to an Al-Si film is effective to reduce hillock density in the high temperature deposition conditions around $400^{\circ}C$. Line width less than $3{\mu}m$ was free of hillock after alloying.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.2
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• pp.82-86
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• 2011

The influences of Bi addition on morphological modification of $Mg_2Si$ phase and mechanical properties were investigated in Mg-7%Al-0.5%Si casting alloy. It was found that the addition of 0.3%Bi changed the $Mg_2Si$ morphology from coarse Chinese script type to polygonal type, and significantly decreased the size to ~5 ${\mu}m$ or less with the increase of number density. The modification of $Mg_2Si$ phase by the addition of Bi resulted in the improvement of tensile properties of the Mg-Al-Si alloy at RT and $175^{\circ}C$.

• Journal of Korean Vacuum Science & Technology
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• v.5 no.1
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• pp.11-18
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• 2001

Dielectric passivation effects on the EM(electromigration) have been a great interest with recent ULSI and multilevel structure tends in thin film interconnections of a microelectronic device. SiO$_2$, PSG(phosphosilicate glass), and Si$_3$N$_4$ passivation materials effects on the EM resistance were investigated by utilizing widely used Al-1%Si thin film interconnections. A standard photolithography process was applied for the fabrication of 0.7㎛ thick 3㎛ wide, and 200㎛ ~1600㎛ long Al-1%Si EM test patterns. SiO$_2$, PSG, and Si$_3$N$_4$ dielectric passivation with the thickness of 300 nm were singly deposited onto the Al-1%Si thin film interconnections by using an APCVD(atmospheric pressure chemical vapor deposition) and a PECVD(plasma enhanced chemical vapor deposition) in order to investigate the passivation materials effects on the EM characteristics. EM tests were performed at the direct current densities of 3.2 $\times$ 10$\^$6/∼4.5 $\times$ 10$\^$6/ A/cm$^2$ and at the temperatures of 180 $\^{C}$, 210$\^{C}$, 240$\^{C}$, and 270$\^{C}$ for measuring the activation energies(Q) and for accelerated test conditions. Activation energies were calculated from the measured MTF(mean-time-to-failure) values. The calculated activation energies for the electromigration were 0.44 eV, 0.45 eV, and 0.50 eV, and 0.66 eV for the case of nonpassivated-, Si$_3$N$_4$passivated-, PSG passivated-, and SiO$_2$ passivated Al-1%Si thin film interconnections, respectively. Thus SiO$_2$ passivation showed the best characteristics on the EM resistance followed by the order of PSG, Si$_3$N$_4$ and nonpassivation. It is believed that the passivation sequences as well as the passivation materials also influence on the EM characteristics in multilevel passivation structures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.195-196
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• 2009

This paper describes the fabrication and characteristics of polycrystalline 3C-SiC thin film diodes for extreme environment applications, in which the this thin film was deposited onto oxidized Si wafers by APCVD using HMDS In this work, the optimized growth temperature and HMDS flow rate were $1,100^{\circ}C$ and 8sccm, respectively. A Schottky diode with a Au, Al/poly 3C-SiC/$SiO_2$/Si(n-type) structure was fabricated and its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84V, over 140V, 61nm, and $2.7{\times}10^{19}cm^2$, respectively. To produce good ohmic contact, Al/3C-SiC were annealed at 300, 400, and $500^{\circ}C$ for 30min under a vacuum of $5.0{\times}10^{-6}$Torr. The obtained p-n junction diode fabricated by poly 3C-SiC had similar characteristics to a single 3C-SiC p-n junction diode.

• Journal of Korea Foundry Society
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• v.15 no.3
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• pp.252-261
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• 1995

The purposes of this study were to investigate the microstructural changes in alloy ribbons of Al-Fe-Mo-Si quarternary system at $450{\sim}500^{\circ}C$, and to study the coarsening mechanism of fine precipitates. Using the hot stage in TEM, in situ microstructural changes in Al-4Fe-0.5Mo-1.5Si alloy ribbon and Al-8Fe-2Mo-1.5Si alloy ribbon have been examined successively up to 60 hours at $450^{\circ}C$ and $500^{\circ}C$. Cell structure in zone B of Al-4Fe-0.5Mo-1.5Si alloy ribbon was observed to collapse even in 10 minutes by in-situ heating at $450^{\circ}C$ and the size of precipitates in zone B increased twice in 60 hours. The precipitates in zone A of Al-4Fe-0.5Mo-1.5Si alloy ribbon showed slower coarsening rate than those in zone B by in-situ heating at $450^{\circ}C$. The precipitates in zone A of Al-8Fe-2Mo-1.5Si alloy ribbon increased 50% by in-situ heating at $500^{\circ}C$ in 50 hours compared to the initial precipitates while any microstructual change in zone B was not observed by in-situ heating at $500^{\circ}C$ up to 50 hours. Only the precipitates in zone A of Al-4Fe-0.5Mo-1.5Si alloy ribbon satisfied $r^3{\propto}t$ relationship of coarsening mechanism.

• The Korean Journal of Ceramics
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• v.1 no.3
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• pp.147-151
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• 1995

Porous composite of $Al_2O_3$ and AIN based mullite and SiC can be prepared by alumium reaction synthesis and atmosphere controllied sintering in order to improve the durability of a gas filter body. The porous $Al_2O_3$-AIN-mullite, which has a strength of 168 kg/$\textrm{cm}^2$ and porosity of 51.59%, could be obtained by stmospheric firing at $1600^{\circ}C$ and the porous $Al_2O_3$-AIN-SiC with a porosity of 33% and strength of 977 kg/$\textrm{cm}^2$, could also be prepared. The average pore size has been changed from 0.2$\mu\textrm{m}$ in a reduction atmosphere and to 2$\mu\textrm{m}$ in an air atmosphere, respectively.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.311-313
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• 1997

The effects of porosity on the pressureless sintered $\beta$-SiC-$ZrB_2$ composites with $Al_2O_3$ additions(4, 8, 12wt.%) under argon atmosphere were investigated. Relative density of $\beta$-SiC-$ZrB_2$ composites were decreased with the $Al_2O_3$ content. The relative density and fracture toughness of $\beta$-SiC-$ZrB_2$ with 4wt% $Al_2O_3$ are 93.2%, $1.323MPa{\cdot}m^{1/2}$ respectively. The Vicker's hardness and flexural strength of $\beta$-SiC-$ZrB_2$ with 12wt.% $Al_2O_3$ are 0.492GPa, 261MPa respectively. Fracture toughness of $\beta$-SiC-$ZrB_2$ composites are directly proportional to relative density.

• Journal of the Korean Ceramic Society
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• v.36 no.3
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• pp.274-283
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• 1999

1.1-nm tobermorite의 수열합성에 SiO2원으로 zeolite광물을 출발물질로하여 소석회와 Ca(Si+Al)의 몰비 0.8~1.0로 150$^{\circ}$~23$0^{\circ}C$,8~48시간 동ㅇㄴ 포화증기압하에서 수열반응을 시킨 결과, 반응초기단계에서 tobermorite가 생성되었고, 고결정성 1.1-nm tobermorite의 최적합성조건은 0.8몰, 23$0^{\circ}C$, 48시간이었다. 출발물질중 Al의 존재로 tobermorite는 Ca/(Si+Al)몰비 0.8이 1.0보다 결정화가 급속히 이루어지고 있으나 Al를 함유치 않은 석영의 경우에는 Ca/Si 몰비 1.0이 0.8에서 보다 결정화가 빠르게 진행되었다 1.1-nm tobermorite는 $700^{\circ}C$에서 일주일간 가열처리하여도 저면간격이 변화하지 않는 열적거동이 이상형임을 보여주었다. 특히 출발물질중 Al의 존재는 1.1-nm tobermorite의 결정화와 안정화를 촉진시켜주며 Al이온이 tobermorite구조중의 Si이온과 동형치환을 한다.

• Journal of Korea Foundry Society
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• v.19 no.6
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• pp.493-500
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• 1999

Squeeze casting was used for fabricating a light metal base composite having high strength and wearresistance. Reactive sintering was used to prepare the preform of Squeeze casting. To utilize Fe-Al intermetallic compounds and SiC particle as a reinforcement, there needs to prepare Fe-Al mixed powder at 50, 60, 70at.%Al, and add SiC powder to the above mixture at 4, 7, 16, 24wt.%. The prepared mixture with SiC was reactive sintered in a tube furnace at $660^{\circ}C$ to get a porous hybrid preform of intermetallic compound and SiC. The preform prepared above was placed in a metal mold, preheated at $660^{\circ}C$ AC4C matrix was injected into the mold with the temperature of the melt at $610^{\circ}C$ After these processes, 66MPa was applied to the mold for 5 minute to finish the whole procedure. The maximum reaction temperature was increased with the increased Al amount, but decreased with the increased SiC amount. The density of the preform was decreased with SiC amount increase in the compacts due to swelling of the preform. An optical microscope was applied to observe the micro structure and the dispersion of the reinforcements. To analyze phases, We utilized XRD, EDS. Hardness test were chosen to get the information of mechanical properties. There were no significant changes in micro structure between the composite and preform. However, it was shown that uniform dispersion of the reinforcers and complete infiltration of the melt into the preform were achieved through the procedure of the squeeze casting. It was observed that the hardness of the composite is decreased with increased SiC amount, resulting from the volumetric expansion of the preform.

• Journal of Korea Foundry Society
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• v.12 no.2
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• pp.131-138
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• 1992

The effects of B additions, alone or in combination with Si, on the microstructure, $DO_3{\rightleftharpoons}B2$ transition temperature($T_c$) and corrosion behavior of Fe-25at%Al alloys were investigated. The raw materials were arc-melted in vacuum and then subjected to the following heat treatments to maximize the $DO_3$ order : homogenized at $1000^{\circ}C$ for 48hrs, slowly cooled to $500^{\circ}C$, and held at that temperature for 24hours. Results showed that the B addition to Fe-25at%Al alloys does indeed refine the grain and change from intergranular to transgranular fracture mode at room temperature, indicating a strengthening of grain boundaries. The Fe-25at% Al-1at% B-3at% Si alloy showed the highest $T_c$(${\Delta}T_c=150^{\circ}C$) in this work. However, the effectiveness of Si in raising $T_c$ decreased with more than 5at% Si additions combined with B. Since the preferential corrosion occurs at the precipitates, the corrosion resistance decreased due to the increased amount of precipitates with alloying additions.