• Bulletin of the Korean Chemical Society
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• v.25 no.5
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• pp.687-693
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• 2004

Composite membranes with a titania layer were prepared by soaking-rolling method with the titania sol of nanoparticles formed in the sol-gel process and investigated regarding the vapor permeation of various organic mixtures. The support modification was conducted by pressing $SiO_2$ xerogel of 500 nm in particle size under 10 MPa on the surface of a porous stainless steel (SUS) substrate and designed the multi-layered structure by coating the intermediate layer of ${\gamma}-Al_2O_3$. Microstructure of titania membrane was affected by heat-treatment and synthesis conditions of precursor sol, and titania formed at calcination temperature of 300$^{\circ}C$ with sol of [$H^+$]/[TIP]=0.3 possessed surface area of 210 $m^2$/g, average pore size of 1.25 nm. The titania composite membrane showed high $H_2/N_2$ selectivity and water/ethanol selectivity as 25-30 and 50-100, respectively. As a result of vapor permeation for water-alcohol and alcohol-alcohol mixture, titania composite membrane showed water-permselective and molecular-sieve permeation behavior. However, water/methanol selectivity of the membrane was very low because of chemical affinity of permeants for the membrane by similar physicochemical properties of water and methanol.

• 한국신재생에너지학회:학술대회논문집
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• 2007.11a
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• pp.306-308
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• 2007

Poly(ethylene glycol) dimethyl ether (PEGDME)/fumed silica/ 1-methyl -3-propylimidazolium iodide (MPII)/$I_2$ mixtures were used as polymer electrolytes in solid state dye-sensitized solar cells (DSSCs). The contents of MPII were changed and the concentration of $I_2$ was fixed at 0.1 mole% with respect to the MPII. The maximum ionic conductivity was obtained at [EG]:[MPII]:[$I_2$]=10:1.5:0.15. It was supposed that the maximum of ionic conductivities would match with that of cell efficiencies, if the ionic conductivity is a rate determining step in the sol id state DSSCs. However, the maximum composition did not show the maximum solar cell performance, indicating the mismatch between ionic conductivity and cell performance. This suggests that the ionic conductivity may not be the rate controlling step in determining the cell efficiency in these experimental conditions, whereas other parameters such as the electron recombination might play an important role. Thus, we tried to modify the surface of the $TiO_2$ particles by coating a thin metal oxide such as $Al_2O_3$ or $Nb_2O_5$ layer to prevent electron recombination. As a result, the maximum of the cell efficiency was shifted to that of the ionic conductivity. The peak shifts were also attempted to be explained by the diffusion coefficient and the lifetime of electrons in the $TiO_2$ layer.

• 한국태양에너지학회:학술대회논문집
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• 2011.11a
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• pp.245-248
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• 2011

Many researches have been carried out to improve light absorption in the crystalline silicon solar cell fabrication. The rear reflection is applied to increase the path length of light, resulting in the light absorption enhancement and thus the efficiency improvement mainly due to increase in short circuit current. In this paper, we manufactured the silicon solar cell using the mono crystalline silicon wafers with $156{\times}156mm^2$, 0.5~3.0 ${\Omega}{\cdot}cm$ of resistivity and p-type. After saw damage removal, the dielectric film ($SiN_x$)on the back surface was deposited, followed by surface texturing in the KOH solution. It resulted in single-side texturing wafer. Then the dielectric film was removed in the HF solution. The silicon wafers were doped with phosphorus by $POCl_3$ with the sheet resistance 50 ${\Omega}/{\Box}$ and then the silicon nitride was deposited on the front surface by the PECVD with 80nm thickness. The electrodes were formed by screen-printing with Ag and Al paste for front and back surface, respectively. The reflectance and transmittance for the single-sided and double-sided textured wafers were compared. The double-sided textured wafer showed higher reflectance and lower transmittance at the long wavelength region, compared to single-sided. The completed crystalline silicon solar cells with different back surface texture showed the conversion efficiency of 17.4% for the single sided and 17.3% for the double sided. The efficiency improvement with single-sided textured solar cell resulted from reflectance increase on back surface and light absorption enhancement.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.414-420
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• 2001

A 30-kV plasma immersion ion implantation setup (P $I^3$) has been equipped with a self-developed 6'-magnetron to perform hard coatings with enhanced adhesion by P $I^3$D(P $I^3$ assisted deposition) process. Using ICP source with immersed Ti antenna and reactive magnetron sputtering of Ti target in $N_2$/Ar ambient gas mixture, the TiN films were prepared on Si substrates at different pulse bias and ion-to-atom arrival ratio ( $J_{i}$ $J_{Me}$ ). Prior to TiN film formation the nitrogen implantation was performed followed by deposition of Ti buffer layer under A $r^{+}$ irradiation. Films grown at $J_{i}$ $J_{Me}$ =0.003 and $V_{pulse}$=-20kV showed columnar grain morphology and (200) preferred orientation while those prepared at $J_{i}$ $J_{Me}$ =0.08 and $V_{pulse}$=-5 kV had dense and eqiaxed structure with (111) and (220) main peaks. X-ray diffraction patterns revealed some amount of $Ti_{x}$ $N_{y}$ in the films. The maximum microhardness of $H_{v}$ =35 GN/ $M^2$ was at the pulse bias of -5 kV. The P $I^3$D technique was applied to enhance wear properties of commercial tools of HSS (SKH51) and WC-Co alloy (P30). The specimens were 25-kV PII nitrogen implanted to the dose 4.10$^{17}$ c $m^{-2}$ and then coated with 4-$\mu\textrm{m}$ TiN film on $Ti_{x}$ $N_{y}$ buffer layer. Wear resistance was compared by measuring weight loss under sliding test (6-mm $Al_2$ $O_3$ counter ball, 500-gf applied load). After 30000 cycles at 500 rpm the untreated P30 specimen lost 3.10$^{-4}$ g, and HSS specimens lost 9.10$^{-4}$ g after 40000 cycles while quite zero losses were demonstrated by TiN coated specimens.s.

• Journal of Korean Society of Environmental Engineers
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• v.27 no.1
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• pp.101-108
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• 2005

Because the stone cultural properties located outdoors, they have been altered and deteriorated in external appearance due to environmental factors such as acid rain, extreme change in temperature, and salts. Damage to stone cultural properties is accelerated particularly due to recent industrial development and environmental pollution. An experimental study was conducted to evaluate the effect of environmental contaminants on the weathering of granite. And as part of the developing of conservation method, $TiO_2$ catalyst was prepared and tested. When fresh granite was dipped into the salt and acid solutions, dissolution rate of eight minerals (Si, Mg, Ca, Na, K, Fe, Mn, Al) are abruptly increased at initial stage of reaction and then increased steadily until 100 cycles. After salt and acid solution experiments, the mineral compositions of the granite surface were lower then that of the fresh granite and density of the weathered granite was steadily decreased from $2.60\;g/cm^3$ to $2.56\;g/cm^3$, but Poissions ratio and absorption ratio were slightly increased. It was expected at stone cultural assets could be weathered by salts and acid rain. In the case of $TiO_2$ was coated to the granite, the dissolution rate of minerals and absorption ratio of $TiO_2$ coated granite were decreased. Therefore, the $TiO_2$ coating method tested in this study considered to be a viable method to assist in the conservation of stone cultural properties from environmental contaminants.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.96-97
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• 2012

In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2000.04a
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• pp.9-10
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• 2000

An important business-field of world-wide steel-industry is the coating of thin metal-sheets with zinc, zinc-aluminum and aluminum based materials. These products mostly go into automotive industry. in particular for the car-body. into building and construction industry as well as household appliances. Due to mass-production, the processing is done in large continuously operating plants where the mostly cold-rolled metal-strip as the substrate is handled in coils up to 40 tons unwind before and rolled up again after passing the processing plant which includes cleaning, annealing, hot-dip galvanizing / aluminizing and chemical treatment. In the liquid Zn, Zn-AI, AI-Zn and AI-Si bathes a combined action of corrosion and wear under high temperature and high stress onto the transfer components (rolls) accounts for major economic losses. Most critical here are the bearing systems of these rolls operating in the liquid system. Rolls in liquid system can not be avoided as they are needed to transfer the steel-strip into and out of the crucible. Since several years, ceramic roller bearings are tested here [1.2], however, in particular due to uncontrollable Slag-impurities within the hot bath [3], slide bearings are still expected to be of a higher potential [4]. The today's state of the art is the application of slide bearings based on Stellite\ulcorneragainst Stellite which is in general a 50-60 wt% Co-matrix with incorporated Cr- and W-carbides and other composites. Indeed Stellite is used as the bearing-material as of it's chemical properties (does not go into solution), the physical properties in particular with poor lubricating properties are not satisfying at all. To increase the Sliding behavior in the bearing system, about 0.15-0.2 wt% of lead has been added into the hot-bath in the past. Due to environmental regulations. this had to be reduced dramatically_ This together with the heavily increasing production rates expressed by increased velocity of the substrate-steel-band up to 200 m/min and increased tractate power up to 10 tons in modern plants. leads to life times of the bearings of a few up to several days only. To improve this situation. the Mechanical Alloying (MA) TeChnique [5.6.7.8] is used to prOduce advanced Stellite-based bearing materials. A lubricating phase is introduced into Stellite-powder-material by MA, the composite-powder-particles are coated by High Energy Milling (HEM) in order to produce bearing-bushes of approximately 12 kg by Sintering, Liquid Phase Sintering (LPS) and Hot Isostatic Pressing (HIP). The chemical and physical behavior of samples as well as the bearing systems in the hot galvanizing / aluminizing plant are discussed. DependenCies like lubricant material and composite, LPS-binder and composite, particle shape and PM-route with respect to achievable density. (temperature--) shock-reSistibility and corrosive-wear behavior will be described. The materials are characterized by particle size analysis (laser diffraction), scanning electron microscopy and X-ray diffraction. corrosive-wear behavior is determined using a special cylinder-in-bush apparatus (CIBA) as well as field-test in real production condition. Part I of this work describes the initial testing phase where different sample materials are produced, characterized, consolidated and tested in the CIBA under a common AI-Zn-system. The results are discussed and the material-system for the large components to be produced for the field test in real production condition is decided. Outlook: Part II of this work will describe the field test in a hot-dip-galvanizing/aluminizing plant of the mechanically alloyed bearing bushes under aluminum-rich liquid metal. Alter testing, the bushes will be characterized and obtained results with respect to wear. expected lifetime, surface roughness and infiltration will be discussed. Part III of this project will describe a second initial testing phase where the won results of part 1+11 will be transferred to the AI-Si system. Part IV of this project will describe the field test in a hot-dip-aluminizing plant of the mechanically alloyed bearing bushes under aluminum liquid metal. After testing. the bushes will be characterized and obtained results with respect to wear. expected lifetime, surface roughness and infiltration will be discussed.