• Title/Summary/Keyword: Al-Si coated

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Effect of the catalyst deposition rates on the growth of carbon nanotubes

  • Ko, Jae-Sung;Choi, In-Sung;Lee, Nae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.264-264
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    • 2010
  • Single-walled carbon nanotubes (SWCNTs) were grown on a Si wafer by using thermal chemical vapor deposition (t-CVD). We investigated the effect of the catalyst deposition rate on the types of CNTs grown on the substrate. In general, smaller islands of catalyst occur by agglomeration of a catalyst layer upon annealing as the catalyst layer becomes thinner, which results in the growth of CNTs with smaller diameters. For the same thickness of catalyst, a slower deposition rate will cause a more uniformly thin catalyst layer, which will be agglomerated during annealing, producing smaller catalyst islands. Thus, we can expect that the smaller-diameter CNTs will grow on the catalyst deposited with a lower rate even for the same thickness of catalyst. The 0.5-nm-thick Fe served as a catalyst, underneath which Al was coated as a catalyst support as well as a diffusion barrier on the Si substrate. The catalyst layers were. coated by using thermal evaporation. The deposition rates of the Al and Fe layers varied to be 90, 180 sec/nm and 70, 140 sec/nm, respectively. We prepared the four different combinations of the deposition rates of the AI and Fe layers. CNTs were synthesized for 10 min by flowing 60 sccm of Ar and 60 sccm of $H_2$ as a carrier gas and 20 sccm of $C_2H_2$ as a feedstock at 95 torr and $810^{\circ}C$. The substrates were subject to annealing for 20 sec for every case to form small catalyst islands prior to CNT growth. As-grown CNTs were characterized by using field emission scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, UV-Vis NIR spectroscopy, and atomic force microscopy. The fast deposition of both the Al and Fe layers gave rise to the growth of thin multiwalled CNTs with the height of ${\sim}680\;{\mu}m$ for 10 min while the slow deposition caused the growth of ${\sim}800\;{\mu}m$ high SWCNTs. Several radial breathing mode (RBM) peaks in the Raman spectra were observed at the Raman shifts of $113.3{\sim}281.3\;cm^{-1}$, implying the presence of SWCNTs (or double-walled CNTs) with the tube diameters 2.07~0.83 nm. The Raman spectra of the as-grown SWCNTs showed very low G/D peak intensity ratios, indicating their low defect concentrations.

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Si and Mg Coatings on the Hydroxyapatite Film Formed Ti-29Nb-xHf Alloys by Plasma Electrolyte Oxidation

  • Park, Seon-Yeong;Choe, Han-Cheol
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2017.05a
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    • pp.152-152
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    • 2017
  • Titanium and its alloys have been widely used for biomedical applications. However, the use of the Ti-6Al-4V alloy in biomaterial is then a subject of controversy because aluminum ions and vanadium oxide have potential detrimental influence on the human body due to vanadium and aluminum. Hence, recent works showed that the synthesis of new Ti-based alloys for implant application involves more biocompatible metallic alloying element,such as, Nb, Hf, Zr and Mo. In particular, Nb and Hf are one of the most effective Ti ${\beta}$-stabilizer and reducing the elastic modulus. Plasma electrolyte oxidation (PEO) is known as excellent method in the biocompatibility of biomaterial due to quickly coating time and controlled coating condition. The anodized oxide layer and diameter modulation of Ti alloys can be obtained function of improvement of cell adhesion. Silicon (Si) and magnesium (Mg) has a beneficial effect on bone. Si in particular has been found to be essential for normal bone and cartilage growth and development. In vitro studies have shown that Mg plays very important roles in essential for normal growth and metabolism of skeletal tissue in vertebrates and can be detected as minor constituents in teeth and bone. Therefore, in this study, Si and Mg coatings on the hydroxyapatite film formed Ti-29Nb-xHf alloys by plasma electrolyte oxidation has been investigated using several experimental techniques. Ti-29Nb-xHf (x= 0, 3, 7 and 15wt%, mass fraction) alloys were prepared Ti-29Nb-xHf alloys of containing Hf up from 0 wt% to 15 wt% were melted by using a vacuum furnace. Ti-29Nb-xHf alloys were homogenized for 2 hr at $1050^{\circ}C$. The electrolyte was Si and Mg ions containing calcium acetate monohydrate + calcium glycerophosphate at room temperature. The microstructure, phase and composition of Si and Mg coated oxide surface of Ti-29Nb-xHf alloys were examined by FE-SEM, EDS, and XRD.

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A study for omega-shaped gate ZnO nanowire FET (Omega 형태의 게이트를 갖는 ZnO 나노선 FET에 대한 연구)

  • Keem, Ki-Hyun;Kang, Jeong-Min;Yoon, Chang-Joon;Jeong, Dong-Young;Kim, Sang-Sig
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1297-1298
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    • 2006
  • Omega-shaped-gate (OSG) nanowire-based field effect transistors (FETs) have been attracted recently attention due to their highdevice performance expected from theoretical simulations among nanowire-based FETs with other gate geometries. OSG FETs with the channels of ZnO nanowires were successfully fabricated in this study with photolithographic processes. In the OSG FETs fabricated on oxidized Si substrates, the channels of ZnO nanowires with diameters of about 60 nm are coated surroundingly by $Al_{2}O_{3}$ as gate dielectrics with atomic layer deposition. About 80 % of the surfaces of the nanowires coated with $Al_{2}O_{3}$ is covered with gate metal to form OSG FETs. A representative OSG FET fabricated in this study exhibits a mobility of 98.9 $cm^{2}/Vs$, a peak transconductance of 0.4 ${\mu}S$, and an Ion/Ioff ratio of $10^6$ the value of the Ion/Ioff ratio obtained from this OSG FET is the highest among nanowire-based FETs, to our knowledge. Its mobility, peak transconductance, and Ion/Ioff ratio arc remarkably enhanced by 11.5, 32, and $10^6$ times, respectively, compared with a back-gate FET with the same ZnO nanowire channel as utilized in the OSG FET.

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Types and Yields of Carbon Nanotubes Synthesized Depending on Catalyst Pretreatment

  • Go, Jae-Seong;Lee, Nae-Seong
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.17.2-17.2
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    • 2011
  • Double-walled carbon nanotubes (DWCNTs) were grown with vertical alignment on a Si wafer by using catalytic thermal chemical vapor deposition. This study investigated the effect of pre-annealing time of catalyst on the types of CNTs grown on the substrate. The catalyst layer is usually evolved into discretely distributed nanoparticles during the annealing and initial growth of CNTs. The 0.5-nm-thick Fe served as a catalyst, underneath which Al was coated as a catalyst support as well as a diffusion barrier on the Si substrate. Both the catalyst and support layers were coated by using thermal evaporation. CNTs were synthesized for 10 min by flowing 60 sccm of Ar and 60 sccm of H2 as a carrier gas and 20 sccm of C2H2 as a feedstock at 95 torr and $750^{\circ}C$. In this study, the catalyst and support layers were subject to annealing for 0~420 sec. As-grown CNTs were characterized by using field emission scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, and atomic force microscopy. The annealing for 90~300 sec caused the growth of DWCNTs as high as ~670 ${\mu}m$ for 10 min while below 90 sec and over 420 sec 300~830 ${\mu}m$-thick triple and multiwalled CNTs occurred, respectively. Several radial breathing mode (RBM) peaks in the Raman spectra were observed at the Raman shifts of 112~191 cm-1, implying the presence of DWCNTs, TWCNTs, MWCNTs with the tube diameters 3.4, 4.0, 6.5 nm, respectively. The maximum ratio of DWCNTs was observed to be ~85% at the annealing time of 180 sec. The Raman spectra of the as-grown DWCNTs showed low G/D peak intensity ratios, indicating their low defect concentrations. As increasing the annealing time, the catalyst layer seemed to be granulated, and then grown to particles with larger sizes but fewer numbers by Ostwald ripening.

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Electrochemical and Cavitation Characteristics of Al Thermal Spray Coating with F-Si Sealing (알루미늄 용사코팅의 불소실리콘 봉공재 적용에 따른 전기화학적 및 캐비테이션 특성 평가)

  • Han, Min-Su;Lee, Seung-Jun;Jang, Seok-Ki;Kim, Seong-Jong
    • Corrosion Science and Technology
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    • v.9 no.6
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    • pp.317-324
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    • 2010
  • Marine transportation by ships is characterized by remote, large-volume and lower rates than the others carry system. Ships account for over 80% of all international trading, and marine transportation is an internationally competitive, strategic, and great national important industry. The construction of larger and faster ships has brought about many problems such as cavitations and erosion corrosion. Cavitations and erosion corrosion make damages on materials and leads to break down members due to continuous physical contacts with shock waves and fluids from the generation and extinction of air bubbles in sea water vortex. The steel used for ship constructions was spray-coated with Al wire, and additionally sealed with fluorine silicone sealing material. Results of experiment, corrosion resistance of sealed thermal spray coating was improved, however in cavitation resistance, the large effect was not appeared. Accordingly, this study applied for thermal spray coating to provide better electrochemical characteristics and corrosion resistance in marine environment.

PACVD of Plasma Polymerized Organic Thin Films and Comparison of their Electrochemical Properties

  • I.S. Bae;S.H. Cho;Kim, M.C.;Y.H. Roh;J.H. Boo
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2003.05a
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    • pp.53-53
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    • 2003
  • Plasma polymerized organic thin films were deposited on Si(100) glass and metal substrates using thiophene and ethylcyclohexane precursors by PECVD method. In order to compare electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 30~100 W. AFM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants, respectively. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the thiophene films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C- V data measured at 1MHz. From the electrical property measurements such as I-V and C-V characteristics, the minimum dielectric constant and the best leakage current of thiophene thin films were obtained to be about 3.22 and $1{\;}{\times}10^{-11}{\;}A/cm^2$. However, in case of ethylcyclohexane thin films, the minimum dielectric constant and the best leakage current were obtained to be about 3.11 and $5{\;}{\times}10^{-12}{\;}A/cm^2$.

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Plasma-Sprayed $Al_2O_3-SiO_2$ Multi-Oxide Films on Stainless Steel Substrate

  • Korobova, N.;Soh, Deawha
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • 2000.11a
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    • pp.116-119
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    • 2000
  • The advantage of plasma-sprayed coating is their good resistance against thermal shock due to the porous state of the coated layer with a consequently low Youngs modulus. However, the existence of many pores with a bimodal distribution and a laminar structure in the coating reduces coating strength and oxidation protection of the base metals. In order to counteract these problems, there have been many efforts to obtain dense coatings by spraying under low pressure or vacuum and by controlling particle size and morphology of the spraying materials. The aim of the present study is to survey the effects of the HIP treatment between 1100 and 130$0^{\circ}C$ on plasma-sprayed oxide coating of A1$_2$O$_3$, A1$_2$O$_3$-SiO$_2$on the metal substrate (type C18N10T stainless steel). These effects were characterized by phase identification, Vickers hardness measurement, and tensile test before and after HIPing. These results show that high-pressure treatment has an advantage for improving adhesive strength and Vickers hardness of plasma-sprayed coatings.

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Microstructure and Corrosion Properties of AZ91D Magnesium Alloy treated by Plasma Electrolytic Oxidation (플라즈마 전해 산화 처리한 AZ91D 마그네슘합금 피막의 미세조직 및 부식 특성)

  • Chang, Si-Young;Kim, Ye-Lim;Kim, Yang-Do
    • Journal of Korea Foundry Society
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    • v.28 no.1
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    • pp.20-24
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    • 2008
  • The characteristics, such as roughness, thickness, microhardness and corrosion resistance, of plasma electrolytic oxide coatings on AZ91D alloy were investigated under the processing condition of various coating times. The coatings on AZ91D alloy consisted of MgO, $MgAl_{2}O_{4}$ and $Mg_{2}SiO_{4}$ oxides. The surface roughness and thickness of coatings became larger with increasing the coating time. The microhardness in cross section of coatings was much higher than not only that in surface but that in the conventional anodic oxide coatings, which increased progressively as the coating time increased. After being immersed in 3.5%NaCl solution and methyl alcohol, the corrosion resistance of AZ91D alloy was markedly improved by plasma electrolytic oxidation coating treatment, and the AZ91D alloy coated for 50min revealed excellent corrosion resistance.

Properties of Polymethyl methacrylate (PMMA) for Polymer Gate Dielectric Thin Films Prepared by Spin Coating (Spin coating 공정을 이용한 Polymethyl methacrylate (PMMA) 박막의 polymer gate dielectric layer로써의 특성평가)

  • Na, Moon-Kyong;Kang, Dong-Pil;Ahn, Myeog-Sang;Myoung, In-Hye;Kang, Young-Taec
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.05b
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    • pp.29-32
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    • 2005
  • Poly (methyl methacrylate) (PMMA) is one of the promising representive of polymer gate dielectric for its high resistivity and sutible dielectric constant. PMMA (Mw=96700) films were prepared on p-Si by spin coating method. PMMA were coated compactively and flatly as observeed by AFM. MIS(Al/PMMA/p-Si) structure was made and capacitance-voltage (C-V) and current-voltage (I-V) measurements were done with PMMA films for different thermal treatment temperature. PMMA films were showed proper dielectric constant and breakdown voltage. Above the glass transition temperature PMMA films degraded. C-V measured at various frequencies, dielectric constant increased a little. The absence of hysteresis in the C-V characteristics, which eliminate the possibility of mobile charges in the PMMA films. The observed thermal stability, smooth surfaces, dielectric constant, I-V behavior implies PMMA formed by spin coating can be used as an efficient gate dielectric layer in OTFTs.

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Crystal Growth and Characterization of Metallurgical-grade Polycrystalline Silicon by the Bridgman Method (Bridgman법에 의한 금속급 다결정 Si의 결정성장 및 특성평가에 관한 연구)

  • Lee, Chang-Won;Kim, Kye-Soo;Hong, Chun-Pyo
    • Journal of Korea Foundry Society
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    • v.14 no.1
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    • pp.28-34
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    • 1994
  • Metallurgical-grade polycrystalline silicon was directionally solidified at growth rates of $0.2{\sim}1.0mm/min$ by using split type, reusable graphite molds which were coated with $Si_3N_4$ powder. The resultant grain sizes of the silicon ingots and the shapes of the solid/liquid(S/L) interfaces were investigated. X-ray diffraction was used to determine the preferred orientation in each of the silicon ingots. The impurity content of the silicon was analyzed and the resistivities of the ingots were measured. During the growth of an ingot, the shape of the S/L interface was concave to the silicon melt, and the resistivity decreased. The presence of Al which can be acting as a carrier, is thought to be the main factor causing such a decrease in resistivity. When a growth rate of 0.2㎜/min was used, the preferred orientation was found to be (111).

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