• Current Photovoltaic Research
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• v.2 no.1
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• pp.1-7
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• 2014

We developed a method of growing thin Si film at $600^{\circ}C$ by hot wire CVD using a very thin large-grained poly-Si seed layer for thin-film Si solar cells. The seed layer was prepared by crystallizing an amorphous Si film by vapor-induced crystallization using $AlCl_3$ vapor. The average grain size of the p-type epitaxial Si layer was about $20{\mu}m$ and crystallographic defects in the epitaxial layer were mainly low-angle grain boundaries and coincident-site lattice boundaries, which are special boundaries with less electrical activity. Moreover, with a decreasing in-situ boron doping time, the mis-orientation angle between grain boundaries and in-grain defects in epitaxial Si decreased. Due to fewer defects, the epitaxial Si film was high quality evidenced from Raman and TEM analysis. The highest mobility of $360cm^2/V{\cdot}s$ was achieved by decreasing the in-situ boron doping time. The performance of our preliminary thin-film solar cells with a single-side HIT structure and $CoSi_2$ back contact was poor. However, the result showed that the epitaxial Si film has considerable potential for improved performance with a reduced boron doping concentration.

• Journal of Welding and Joining
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• v.33 no.6
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• pp.36-41
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• 2015

In the automotive industry, TWB hot stamping process is broadly adapted to reduce weight of the car and improve fuel efficiency. However, the process faces a problem of weakened strength of the welded zone after hot stamping process, due to the fact that Al-Si elements of the coating layer penetrating the welded zone. In this study, filler wires with high percentages of carbon and manganese is adapted during laser welding process to secure the strength of the fusion zone. In addition, wire feeding speed and laser welding speed are optimized by sample test.

• Journal of the Semiconductor & Display Technology
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• v.19 no.1
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• pp.55-60
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• 2020

This study designed High impedance filter to reduce RF loss to heater heating wire and increase RF current flowing to heater ground wire. Effects such as D / R improvement and process reproducibility could be seen. In addition, RF parameter distribution optimization was possible by understanding the RF path of PE-CVD equipment using Plasma and designing filter.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.203-207
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• 2009

Copper is known as a replacement for aluminum wire which is used for semiconductor. Because specific resistance of Cu ($1.67{\mu}{\Omega}$-cm) is lower than that of Al ($2.66{\mu}{\Omega}$-cm), Cu reduce RC delay time. Although melting point of Cu($1085^{\circ}C$) is higher than melting point of Al, Cu have characteristic to easily react with Silicon(Si) in low temperature, and it isn't good at adhesive strength with Si. For above these reason, research of diffusion barrier to prevent reaction between Cu and Si and to raise adhesive strength is steadily advanced. Our study group have researched on W-C-N (tungsten-carbon-nitrogen) Diffusion barrier for preventing diffusion of Cu through semiconductor. By recent studies, It's reported that W-C-N diffusion barrier can even precent Cu and Si diffusing effectively at high temperature. In this treatise, we vaporized different proportion of N into diffusion barrier to research Cu's Electromigration based on the results and studied surface hardness in the heat process using nano scale indentation system. We gain that diffusion barrier containing nitrogen is more stable for Cu's electromigration and has stronger surface hardness in heat treatment process.

• Journal of Powder Materials
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• v.15 no.4
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• pp.285-291
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• 2008

Fe based ($Fe_{68.2}C_{5.9}Si_{3.5}B_{6.7}P_{9.6}Cr_{2.1}Mo_{2.0}Al_{2.0}$) amorphous powder were produced by a gas atomization process, and then ductile Cu powder fabricated by the electric explosion of wire(EEW) were mixed in the liquid (methanol) consecutively. The Fe-based amorphous - nanometallic Cu composite powders were compacted by a spark plasma sintering (SPS) processes. The nano-sized Cu powders of ${\sim}\;nm$200 produced by EEW in the methanol were mixed and well coated with the atomized Fe amorphous powders through the simple drying process on the hot plate. The relative density of the compacts obtained by the SPS showed over 98% and its hardness was also found to reach over 1100 Hv.

• Steel and Composite Structures
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• v.22 no.4
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• pp.745-752
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• 2016

An investigation has been done to study the evolution of the microstructure, mechanical and electrical properties of AlMgSi alloy destined for the transport of electric energy, in function of the deformation caused by the cold drawing process. We identified that drawing of aluminum wire causes development of a fibrous texture of type <111> and <100>. We notice also that the electrical resistivity and mechanical resistance increases with the increasing of the deformation level. Characterization methods used in this work is: The Electron Back Scattered Diffraction EBSD, X-Ray diffraction, Vickers microhardness, Tensile test, Measuring electrical resistivity, the Scanning Electron Microscope (SEM) and Energy Diffraction Spectrum (EDS).

• Proceedings of the IEEK Conference
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• 2002.06a
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• pp.439-442
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• 2002

We present in this Paper a microwave Power sensor fabricated by a standard CMOS process and a bulk micromachining process. The sensor consists of a CPW transmission line, a resistor as a healer, and thermocouple arrays. An input microwave heater, the resistor so that the temperature rises proportionally to the microwave power and tile thermocouple arrays convert it to an electrical signal. The sensor uses air bridged 8round of CPW realized by wire bonding to reduce tile device size and cost and to improve the thermal impedance. Al/poly-Si junctions are used for the thermocouples. Poly-Si is used for tile resister and Aluminium is for transmission line. The resistor and hot junctions of the thermocouples are placed on a low stress silicon nitride diaphragm to minimize a thermal loss. The fabricated device operates properly from 1㎼ to 100㎽\ulcorner of input power. The sensitivity was measured to be ,3.2～4.7 V/W.

• Journal of Integrative Natural Science
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• v.2 no.4
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• pp.289-292
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• 2009

Perchlorosilanes are useful precursors for the synthesis of hydrosilanes for the fabrication of electronic devices such as silicon thin-film transistors and silicon nanoparticles. For this solution process, requirements of precursors applicable to solution process are relatively low volatile and soluble in common organic solvents. In this work, the decaphenylcyclopentasilane has been obtained from the reaction of the lithium wire and dichlorodiphenylsilane. The reaction of decaphenylcyclopentasilane with lewis acid catalyst, HCl/$AlCl_3$, gives the perchlorocyclopentasilane. Decaphenylcyclopentasilane exhibits an unusual optical property. Its optical property was characterized by UV-vis and fluorescence spectroscopy. Absorption wavelength maxima for the decaphenylcyclopentasilane was 272 nm. Decaphenylcyclopentasilane displayed an emission band at 741 nm with excitation wavelength of 272 nm.

• Journal of Welding and Joining
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• v.30 no.5
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• pp.40-45
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• 2012

Nowadays in Republic of Korea, whole amount of the thermite welding powder for rail joinning is dependent on import. However the demand of the thermite welding powder would be enlarge because some constructing high-speed train and city metro projects are currently in progress. In addition this is the main reason why we should develop the thermite welding powder, domestically. This study is focused on utilizing the recyclable materials like Al powders from cans and iron oxide scales from wire rods as the main components of the thermite welding powder. By minimizing Al content in weld zone by controlling the mixing ratio of the Al powder in the thermite welding powder, the excessive dissolution of the Si and Mn components came from the Al powders could be controled. The tensile strength of welding zone in welded rail was 740 MPa, with that the developed thermite welding powder.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.1049-1052
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• 1997

The pupose of this study on the surface finishing is to examine the performance of brushing as a means of reducing the surface roughness of the precision theaded shafts in ball screw assemblies. Ball screws provide superior performance compared to other types of screw feeds in terms of static and dynamic rolling resistance,backlash,and wear characteristics. The Reduction of the surface roughness of the lead shaft in ball screw assembiles is essential for precision movement,high speed/low noise tracel, and for low wear/long life. To reduce machine dependent errors that would influence the surface roughness compared with other lapping or polishing techniques,experiments will be performed using special wire brushes to polish precision ground shafts. The best results were obtained using the Al /sab 2/O /sab3/ brushes, with the Al /sab 2/O /sab3/ #500 grit brush producing a surface finish of approximately 0.7 .mu.m, and the Al /sab 2/O /sab3/ #600 grit producing a surface finish of approximately 0.8 .mu.m. Both of these results were produced at the highest wheel polishing speed of 3520 rpm. The SiC #500 brush produced a surface roughness of approximately 1 .mu.m at 3520 rpm.